Abstract

Cu is most used substrate to grow monolayer graphene under a temperature near melting point. In this study, we elaborated a remarkable amount of Cu clusters were continuously evaporated during the graphene growth, resulting into the vapor pressure comparable with the CH4. Importantly, the decomposition barrier of CH₄ on Cu clusters is similar or even lower than on Cu surface. CuCH₄ serves as the primary active cluster in complex intermediates, exhibiting a growth-promoting effect. Particularly after the first graphene layer coverage, it may emerge as a dominant catalytic factor for multilayer growth by supplying critical growth species. Through controlled seed incorporation, this mechanism is expected to enable large-area controllable growth of bilayer and multilayer graphene structures.

Abstract

Cu is most used substrate to grow monolayer graphene under a temperature near melting point. In this study, we elaborated a remarkable amount of Cu clusters were continuously evaporated during the graphene growth, resulting into the vapor pressure comparable with the CH4. Importantly, the decomposition barrier of CH₄ on Cu clusters is similar or even lower than on Cu surface. CuCH₄ serves as the primary active cluster in complex intermediates, exhibiting a growth-promoting effect. Particularly after the first graphene layer coverage, it may emerge as a dominant catalytic factor for multilayer growth by supplying critical growth species. Through controlled seed incorporation, this mechanism is expected to enable large-area controllable growth of bilayer and multilayer graphene structures.

Abstract

Cu is most used substrate to grow monolayer graphene under a temperature near melting point. In this study, we elaborated a remarkable amount of Cu clusters were continuously evaporated during the graphene growth, resulting into the vapor pressure comparable with the CH4. Importantly, the decomposition barrier of CH₄ on Cu clusters is similar or even lower than on Cu surface. CuCH₄ serves as the primary active cluster in complex intermediates, exhibiting a growth-promoting effect. Particularly after the first graphene layer coverage, it may emerge as a dominant catalytic factor for multilayer growth by supplying critical growth species. Through controlled seed incorporation, this mechanism is expected to enable large-area controllable growth of bilayer and multilayer graphene structures.

Abstract

Cu is most used substrate to grow monolayer graphene under a temperature near melting point. In this study, we elaborated a remarkable amount of Cu clusters were continuously evaporated during the graphene growth, resulting into the vapor pressure comparable with the CH4. Importantly, the decomposition barrier of CH₄ on Cu clusters is similar or even lower than on Cu surface. CuCH₄ serves as the primary active cluster in complex intermediates, exhibiting a growth-promoting effect. Particularly after the first graphene layer coverage, it may emerge as a dominant catalytic factor for multilayer growth by supplying critical growth species. Through controlled seed incorporation, this mechanism is expected to enable large-area controllable growth of bilayer and multilayer graphene structures.