Research paperExperimental CharacterizationComputational DFTTheoreticalDesigner Heavy Fermions in Incommensurate Nb₃Cl₈/Graphene van der Waals HeterostructuresYuchen Gao, Wenjie Zhou, Fan Yang, Zhijie Ma et al.arXiv preprint·2025·10.48550/arxiv.2506.21837·arXiv:2506.21837AbstractHeavy fermion systems, traditionally realized in rare-earth compounds with limited tunability, have hindered systematic exploration of correlated quantum phenomena. Here, we introduce a general strategy for engineering heavy fermions in incommensurate van der Waals heterostructures by coupling a Mott insulator (Nb₃Cl₈) with itinerant electrons (from monolayer graphene), circumventing strict lattice-matching requirements. Through magnetotransport and slave spin mean-field calculations, we demonstrate the hybridization gap (∆≈30 meV), gate-tunable metal-insulator transition, and band-selective electron effective mass enhancement, hallmarks of Kondo coherence. The heterostructure exhibits nearly order-of-magnitude electron effective mass dichotomy between hybridized and conventional graphene-like regimes, alongside in-plane magnetic field-induced metal-insulator transitions. Top gate-temperature phase mapping reveals competing correlated states, including insulating and hidden-order phases. This work establishes a scalable platform for designing heavy fermion by replacing the itinerant electron materials, with implications for engineering topological superconductivity and quantum criticality in low-dimensional systems.Read more
Dual-gated incommensurate Nb₃Cl₈/monolayer graphene van der Waals heterostructure Hall bar device.1 characterization3 properties4 figuresExperimentalNb₃Cl₈Studied MaterialCStudied MaterialExpand
DFT-modeled Nb₃Cl₈/graphene heterostructure used for band-structure analysis.No measurements recordedSimulated Supercell DftNb₃Cl₈Studied MaterialCStudied MaterialExpand
Research paperExperimental CharacterizationComputational DFTTheoreticalDesigner Heavy Fermions in Incommensurate Nb₃Cl₈/Graphene van der Waals HeterostructuresYuchen Gao, Wenjie Zhou, Fan Yang, Zhijie Ma et al.arXiv preprint·2025·10.48550/arxiv.2506.21837·arXiv:2506.21837AbstractHeavy fermion systems, traditionally realized in rare-earth compounds with limited tunability, have hindered systematic exploration of correlated quantum phenomena. Here, we introduce a general strategy for engineering heavy fermions in incommensurate van der Waals heterostructures by coupling a Mott insulator (Nb₃Cl₈) with itinerant electrons (from monolayer graphene), circumventing strict lattice-matching requirements. Through magnetotransport and slave spin mean-field calculations, we demonstrate the hybridization gap (∆≈30 meV), gate-tunable metal-insulator transition, and band-selective electron effective mass enhancement, hallmarks of Kondo coherence. The heterostructure exhibits nearly order-of-magnitude electron effective mass dichotomy between hybridized and conventional graphene-like regimes, alongside in-plane magnetic field-induced metal-insulator transitions. Top gate-temperature phase mapping reveals competing correlated states, including insulating and hidden-order phases. This work establishes a scalable platform for designing heavy fermion by replacing the itinerant electron materials, with implications for engineering topological superconductivity and quantum criticality in low-dimensional systems.Read more
Dual-gated incommensurate Nb₃Cl₈/monolayer graphene van der Waals heterostructure Hall bar device.1 characterization3 properties4 figuresExperimentalNb₃Cl₈Studied MaterialCStudied MaterialExpand
DFT-modeled Nb₃Cl₈/graphene heterostructure used for band-structure analysis.No measurements recordedSimulated Supercell DftNb₃Cl₈Studied MaterialCStudied MaterialExpand
Research paperExperimental CharacterizationComputational DFTTheoreticalDesigner Heavy Fermions in Incommensurate Nb₃Cl₈/Graphene van der Waals HeterostructuresYuchen Gao, Wenjie Zhou, Fan Yang, Zhijie Ma et al.arXiv preprint·2025·10.48550/arxiv.2506.21837·arXiv:2506.21837AbstractHeavy fermion systems, traditionally realized in rare-earth compounds with limited tunability, have hindered systematic exploration of correlated quantum phenomena. Here, we introduce a general strategy for engineering heavy fermions in incommensurate van der Waals heterostructures by coupling a Mott insulator (Nb₃Cl₈) with itinerant electrons (from monolayer graphene), circumventing strict lattice-matching requirements. Through magnetotransport and slave spin mean-field calculations, we demonstrate the hybridization gap (∆≈30 meV), gate-tunable metal-insulator transition, and band-selective electron effective mass enhancement, hallmarks of Kondo coherence. The heterostructure exhibits nearly order-of-magnitude electron effective mass dichotomy between hybridized and conventional graphene-like regimes, alongside in-plane magnetic field-induced metal-insulator transitions. Top gate-temperature phase mapping reveals competing correlated states, including insulating and hidden-order phases. This work establishes a scalable platform for designing heavy fermion by replacing the itinerant electron materials, with implications for engineering topological superconductivity and quantum criticality in low-dimensional systems.Read more
Dual-gated incommensurate Nb₃Cl₈/monolayer graphene van der Waals heterostructure Hall bar device.1 characterization3 properties4 figuresExperimentalNb₃Cl₈Studied MaterialCStudied MaterialExpand
DFT-modeled Nb₃Cl₈/graphene heterostructure used for band-structure analysis.No measurements recordedSimulated Supercell DftNb₃Cl₈Studied MaterialCStudied MaterialExpand
Research paperExperimental CharacterizationComputational DFTTheoreticalDesigner Heavy Fermions in Incommensurate Nb₃Cl₈/Graphene van der Waals HeterostructuresYuchen Gao, Wenjie Zhou, Fan Yang, Zhijie Ma et al.arXiv preprint·2025·10.48550/arxiv.2506.21837·arXiv:2506.21837AbstractHeavy fermion systems, traditionally realized in rare-earth compounds with limited tunability, have hindered systematic exploration of correlated quantum phenomena. Here, we introduce a general strategy for engineering heavy fermions in incommensurate van der Waals heterostructures by coupling a Mott insulator (Nb₃Cl₈) with itinerant electrons (from monolayer graphene), circumventing strict lattice-matching requirements. Through magnetotransport and slave spin mean-field calculations, we demonstrate the hybridization gap (∆≈30 meV), gate-tunable metal-insulator transition, and band-selective electron effective mass enhancement, hallmarks of Kondo coherence. The heterostructure exhibits nearly order-of-magnitude electron effective mass dichotomy between hybridized and conventional graphene-like regimes, alongside in-plane magnetic field-induced metal-insulator transitions. Top gate-temperature phase mapping reveals competing correlated states, including insulating and hidden-order phases. This work establishes a scalable platform for designing heavy fermion by replacing the itinerant electron materials, with implications for engineering topological superconductivity and quantum criticality in low-dimensional systems.Read more
Dual-gated incommensurate Nb₃Cl₈/monolayer graphene van der Waals heterostructure Hall bar device.1 characterization3 properties4 figuresExperimentalNb₃Cl₈Studied MaterialCStudied MaterialExpand
DFT-modeled Nb₃Cl₈/graphene heterostructure used for band-structure analysis.No measurements recordedSimulated Supercell DftNb₃Cl₈Studied MaterialCStudied MaterialExpand