Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Transport Resistance | Rxx | 1000000ohm | — | |||
| Transport Resistance | pinned Wigner crystal signature | sharp threshold and hysteretic I-V | — | |||
| Transport Resistance | localized insulator signature | nonlinear I-V without hysteresis | — | |||
| Temperature | R₁/R₂ merger temperature | 300mK | — | |||
| Temperature | melting temperature scale | 400mK | — | |||
| Magnetic Field | Landau quantization onset | 0.4T | — | |||
| Charge Fraction | itinerant carrier fraction | 15% | — | |||
| Effective Mass | effective mass | 3me | — | |||
| Dielectric Constant | relative dielectric constant | 4 | — | |||
| Charge Density Threshold | lower-density boundary | 0.310¹² cm⁻² | — | |||
| Charge Density Threshold | upper-density boundary | 0.510¹² cm⁻² | — | |||
| Transport Resistance | Rxx | 1000000ohm | — | |||
| Transport Resistance | Rxy | anomalous Hall resistance with hysteresis | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Transport Resistance | Rxx | 1000000ohm | — | |||
| Transport Resistance | pinned Wigner crystal signature | sharp threshold and hysteretic I-V | — | |||
| Transport Resistance | localized insulator signature | nonlinear I-V without hysteresis | — | |||
| Temperature | R₁/R₂ merger temperature | 300mK | — | |||
| Temperature | melting temperature scale | 400mK | — | |||
| Magnetic Field | Landau quantization onset | 0.4T | — | |||
| Charge Fraction | itinerant carrier fraction | 15% | — | |||
| Effective Mass | effective mass | 3me | — | |||
| Dielectric Constant | relative dielectric constant | 4 | — | |||
| Charge Density Threshold | lower-density boundary | 0.310¹² cm⁻² | — | |||
| Charge Density Threshold | upper-density boundary | 0.510¹² cm⁻² | — | |||
| Transport Resistance | Rxx | 1000000ohm | — | |||
| Transport Resistance | Rxy | anomalous Hall resistance with hysteresis | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Transport Resistance | Rxx | 1000000ohm | — | |||
| Transport Resistance | pinned Wigner crystal signature | sharp threshold and hysteretic I-V | — | |||
| Transport Resistance | localized insulator signature | nonlinear I-V without hysteresis | — | |||
| Temperature | R₁/R₂ merger temperature | 300mK | — | |||
| Temperature | melting temperature scale | 400mK | — | |||
| Magnetic Field | Landau quantization onset | 0.4T | — | |||
| Charge Fraction | itinerant carrier fraction | 15% | — | |||
| Effective Mass | effective mass | 3me | — | |||
| Dielectric Constant | relative dielectric constant | 4 | — | |||
| Charge Density Threshold | lower-density boundary | 0.310¹² cm⁻² | — | |||
| Charge Density Threshold | upper-density boundary | 0.510¹² cm⁻² | — | |||
| Transport Resistance | Rxx | 1000000ohm | — | |||
| Transport Resistance | Rxy | anomalous Hall resistance with hysteresis | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Transport Resistance | Rxx | 1000000ohm | — | |||
| Transport Resistance | pinned Wigner crystal signature | sharp threshold and hysteretic I-V | — | |||
| Transport Resistance | localized insulator signature | nonlinear I-V without hysteresis | — | |||
| Temperature | R₁/R₂ merger temperature | 300mK | — | |||
| Temperature | melting temperature scale | 400mK | — | |||
| Magnetic Field | Landau quantization onset | 0.4T | — | |||
| Charge Fraction | itinerant carrier fraction | 15% | — | |||
| Effective Mass | effective mass | 3me | — | |||
| Dielectric Constant | relative dielectric constant | 4 | — | |||
| Charge Density Threshold | lower-density boundary | 0.310¹² cm⁻² | — | |||
| Charge Density Threshold | upper-density boundary | 0.510¹² cm⁻² | — | |||
| Transport Resistance | Rxx | 1000000ohm | — | |||
| Transport Resistance | Rxy | anomalous Hall resistance with hysteresis | — |