Research paperExperimental CharacterizationEvidence of Metallic Wigner Crystal in Rhombohedral GrapheneTonghang Han, Jackson P. Butler, Shenyong Ye, Zhenqi Hua et al.2025·arXiv:2604.00113AbstractTransport measurements on moiréless dual-gated rhombohedral graphene devices reveal insulating states with sharp threshold and hysteretic current-voltage characteristics consistent with a pinned Wigner crystal, and at higher displacement field a metallic Wigner crystal state with coexisting itinerant carriers and charge ordering. The work reports evidence across tetralayer, pentalayer, and hexalayer graphene in a low charge-density regime, including anomalous Hall response and magnetic-field evolution consistent with charge exchange between itinerant carriers and a crystalline electron background.Read more
Hexalayer rhombohedral graphene device H₁ in a dual-gated hBN-encapsulated transport geometry.1 characterization9 properties2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Tetralayer rhombohedral graphene device T₁ in a dual-gated hBN-encapsulated transport geometry.1 characterization3 properties2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Pentalayer rhombohedral graphene device used in the reported transport study.1 characterization1 property1 figureExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationEvidence of Metallic Wigner Crystal in Rhombohedral GrapheneTonghang Han, Jackson P. Butler, Shenyong Ye, Zhenqi Hua et al.2025·arXiv:2604.00113AbstractTransport measurements on moiréless dual-gated rhombohedral graphene devices reveal insulating states with sharp threshold and hysteretic current-voltage characteristics consistent with a pinned Wigner crystal, and at higher displacement field a metallic Wigner crystal state with coexisting itinerant carriers and charge ordering. The work reports evidence across tetralayer, pentalayer, and hexalayer graphene in a low charge-density regime, including anomalous Hall response and magnetic-field evolution consistent with charge exchange between itinerant carriers and a crystalline electron background.Read more
Hexalayer rhombohedral graphene device H₁ in a dual-gated hBN-encapsulated transport geometry.1 characterization9 properties2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Tetralayer rhombohedral graphene device T₁ in a dual-gated hBN-encapsulated transport geometry.1 characterization3 properties2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Pentalayer rhombohedral graphene device used in the reported transport study.1 characterization1 property1 figureExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationEvidence of Metallic Wigner Crystal in Rhombohedral GrapheneTonghang Han, Jackson P. Butler, Shenyong Ye, Zhenqi Hua et al.2025·arXiv:2604.00113AbstractTransport measurements on moiréless dual-gated rhombohedral graphene devices reveal insulating states with sharp threshold and hysteretic current-voltage characteristics consistent with a pinned Wigner crystal, and at higher displacement field a metallic Wigner crystal state with coexisting itinerant carriers and charge ordering. The work reports evidence across tetralayer, pentalayer, and hexalayer graphene in a low charge-density regime, including anomalous Hall response and magnetic-field evolution consistent with charge exchange between itinerant carriers and a crystalline electron background.Read more
Hexalayer rhombohedral graphene device H₁ in a dual-gated hBN-encapsulated transport geometry.1 characterization9 properties2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Tetralayer rhombohedral graphene device T₁ in a dual-gated hBN-encapsulated transport geometry.1 characterization3 properties2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Pentalayer rhombohedral graphene device used in the reported transport study.1 characterization1 property1 figureExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationEvidence of Metallic Wigner Crystal in Rhombohedral GrapheneTonghang Han, Jackson P. Butler, Shenyong Ye, Zhenqi Hua et al.2025·arXiv:2604.00113AbstractTransport measurements on moiréless dual-gated rhombohedral graphene devices reveal insulating states with sharp threshold and hysteretic current-voltage characteristics consistent with a pinned Wigner crystal, and at higher displacement field a metallic Wigner crystal state with coexisting itinerant carriers and charge ordering. The work reports evidence across tetralayer, pentalayer, and hexalayer graphene in a low charge-density regime, including anomalous Hall response and magnetic-field evolution consistent with charge exchange between itinerant carriers and a crystalline electron background.Read more
Hexalayer rhombohedral graphene device H₁ in a dual-gated hBN-encapsulated transport geometry.1 characterization9 properties2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Tetralayer rhombohedral graphene device T₁ in a dual-gated hBN-encapsulated transport geometry.1 characterization3 properties2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricExpand
Pentalayer rhombohedral graphene device used in the reported transport study.1 characterization1 property1 figureExperimentalCStudied MaterialBNSubstrate / DielectricExpand
