Research paper
Computational DFTTheoreticalComputed Band Structure| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Calculated Band Gap | ABNNR gap (reference H-passivated fully relaxed) | 4.4eV | — | |||
| Calculated Band Gap | ABNNR gap under transverse electric field | 4eV | — | |||
| Calculated Band Gap | AGNR gap at width Na=7 | 1.6eV | — | |||
| Calculated Band Gap | ABNNR gap variation under uniaxial strain | approximately 0.1eV | — | |||
| Calculated Band Gap | AGNR gap variation under uniaxial strain | approximately 0.3eV | — | |||
| Calculated Band Gap | ABNNR gap change under biaxial strain | approximately 0.2eV | — | |||
| Calculated Band Gap | AGNR gap change under biaxial strain | approximately 0.0eV | — |
First-principle investigation of the electronic structure and optical properties of graphene/boron nitride lateral heterostructures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Calculated Band Gap | ABNNR gap (reference H-passivated fully relaxed) | 4.4eV | — | |||
| Calculated Band Gap | ABNNR gap under transverse electric field | 4eV | — | |||
| Calculated Band Gap | AGNR gap at width Na=7 | 1.6eV | — | |||
| Calculated Band Gap | ABNNR gap variation under uniaxial strain | approximately 0.1eV | — | |||
| Calculated Band Gap | AGNR gap variation under uniaxial strain | approximately 0.3eV | — | |||
| Calculated Band Gap | ABNNR gap change under biaxial strain | approximately 0.2eV | — | |||
| Calculated Band Gap | AGNR gap change under biaxial strain | approximately 0.0eV | — |
First-principle investigation of the electronic structure and optical properties of graphene/boron nitride lateral heterostructures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Calculated Band Gap | ABNNR gap (reference H-passivated fully relaxed) | 4.4eV | — | |||
| Calculated Band Gap | ABNNR gap under transverse electric field | 4eV | — | |||
| Calculated Band Gap | AGNR gap at width Na=7 | 1.6eV | — | |||
| Calculated Band Gap | ABNNR gap variation under uniaxial strain | approximately 0.1eV | — | |||
| Calculated Band Gap | AGNR gap variation under uniaxial strain | approximately 0.3eV | — | |||
| Calculated Band Gap | ABNNR gap change under biaxial strain | approximately 0.2eV | — | |||
| Calculated Band Gap | AGNR gap change under biaxial strain | approximately 0.0eV | — |
First-principle investigation of the electronic structure and optical properties of graphene/boron nitride lateral heterostructures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Calculated Band Gap | ABNNR gap (reference H-passivated fully relaxed) | 4.4eV | — | |||
| Calculated Band Gap | ABNNR gap under transverse electric field | 4eV | — | |||
| Calculated Band Gap | AGNR gap at width Na=7 | 1.6eV | — | |||
| Calculated Band Gap | ABNNR gap variation under uniaxial strain | approximately 0.1eV | — | |||
| Calculated Band Gap | AGNR gap variation under uniaxial strain | approximately 0.3eV | — | |||
| Calculated Band Gap | ABNNR gap change under biaxial strain | approximately 0.2eV | — | |||
| Calculated Band Gap | AGNR gap change under biaxial strain | approximately 0.0eV | — |
First-principle investigation of the electronic structure and optical properties of graphene/boron nitride lateral heterostructures