Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Hybrid electroluminescence device consisting of a GaN/InGaN laser diode with front-facet band-stop dielectric mirror coating, back-side highly reflective dielectric mirror, and commercially available hBN nanocrystals transferred from PDMS onto the laser facet.
4 characterizations7 properties3 figures
ExperimentalhBNStudied MaterialInGaN/GaN laser diodeStudied MaterialMgF₂Capping Or ContactTa₂O₅Capping Or Contact(C₂H₆OSi)nSubstrate / Dielectric
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Hybrid electroluminescence device consisting of a GaN/InGaN laser diode with front-facet band-stop dielectric mirror coating, back-side highly reflective dielectric mirror, and commercially available hBN nanocrystals transferred from PDMS onto the laser facet.
4 characterizations7 properties3 figures
ExperimentalhBNStudied MaterialInGaN/GaN laser diodeStudied MaterialMgF₂Capping Or ContactTa₂O₅Capping Or Contact(C₂H₆OSi)nSubstrate / Dielectric
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Hybrid electroluminescence device consisting of a GaN/InGaN laser diode with front-facet band-stop dielectric mirror coating, back-side highly reflective dielectric mirror, and commercially available hBN nanocrystals transferred from PDMS onto the laser facet.
4 characterizations7 properties3 figures
ExperimentalhBNStudied MaterialInGaN/GaN laser diodeStudied MaterialMgF₂Capping Or ContactTa₂O₅Capping Or Contact(C₂H₆OSi)nSubstrate / Dielectric
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Hybrid electroluminescence device consisting of a GaN/InGaN laser diode with front-facet band-stop dielectric mirror coating, back-side highly reflective dielectric mirror, and commercially available hBN nanocrystals transferred from PDMS onto the laser facet.
4 characterizations7 properties3 figures
ExperimentalhBNStudied MaterialInGaN/GaN laser diodeStudied MaterialMgF₂Capping Or ContactTa₂O₅Capping Or Contact(C₂H₆OSi)nSubstrate / Dielectric
Why these are connected
Related documents with shared materials, methods, properties, or citations.