Research paperTheoreticalComputed PhononLong wavelength interdomain phonons and instability of dislocations in small-angle twisted bilayersV. V. EnaldievarXiv·2025·10.1038/s41467-021-25924-·arXiv:2409.04166AbstractA continuum theory is developed for long-wavelength interdomain phonons localized at dislocations separating domains in small-angle twisted homobilayers of graphene and MX₂ transition-metal dichalcogenides. The analysis shows that the lowest gapless subband can acquire imaginary frequencies below a critical wave number, implying instability of sufficiently long straight partial and perfect dislocations, while higher subbands are gapped and lie below the interlayer shear mode frequency of the domains.Read more
Small-angle twisted homobilayer graphene in parallel-aligned (P) configuration with a single partial dislocation separating Bernal-stacked domains.2 propertiesSimulatedCStudied MaterialExpand
Small-angle twisted MoS₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedMoS₂Studied MaterialExpand
Small-angle twisted WS₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedWS₂Studied MaterialExpand
Small-angle twisted MoSe₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedMoSe₂Studied MaterialExpand
Small-angle twisted WSe₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedWSe₂Studied MaterialExpand
Small-angle twisted MoS₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.4 propertiesSimulatedMoS₂Studied MaterialExpand
Small-angle twisted WS₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.4 propertiesSimulatedWS₂Studied MaterialExpand
Small-angle twisted MoSe₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.4 propertiesSimulatedMoSe₂Studied MaterialExpand
Small-angle twisted WSe₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.3 propertiesSimulatedWSe₂Studied MaterialExpand
Research paperTheoreticalComputed PhononLong wavelength interdomain phonons and instability of dislocations in small-angle twisted bilayersV. V. EnaldievarXiv·2025·10.1038/s41467-021-25924-·arXiv:2409.04166AbstractA continuum theory is developed for long-wavelength interdomain phonons localized at dislocations separating domains in small-angle twisted homobilayers of graphene and MX₂ transition-metal dichalcogenides. The analysis shows that the lowest gapless subband can acquire imaginary frequencies below a critical wave number, implying instability of sufficiently long straight partial and perfect dislocations, while higher subbands are gapped and lie below the interlayer shear mode frequency of the domains.Read more
Small-angle twisted homobilayer graphene in parallel-aligned (P) configuration with a single partial dislocation separating Bernal-stacked domains.2 propertiesSimulatedCStudied MaterialExpand
Small-angle twisted MoS₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedMoS₂Studied MaterialExpand
Small-angle twisted WS₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedWS₂Studied MaterialExpand
Small-angle twisted MoSe₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedMoSe₂Studied MaterialExpand
Small-angle twisted WSe₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedWSe₂Studied MaterialExpand
Small-angle twisted MoS₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.4 propertiesSimulatedMoS₂Studied MaterialExpand
Small-angle twisted WS₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.4 propertiesSimulatedWS₂Studied MaterialExpand
Small-angle twisted MoSe₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.4 propertiesSimulatedMoSe₂Studied MaterialExpand
Small-angle twisted WSe₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.3 propertiesSimulatedWSe₂Studied MaterialExpand
Research paperTheoreticalComputed PhononLong wavelength interdomain phonons and instability of dislocations in small-angle twisted bilayersV. V. EnaldievarXiv·2025·10.1038/s41467-021-25924-·arXiv:2409.04166AbstractA continuum theory is developed for long-wavelength interdomain phonons localized at dislocations separating domains in small-angle twisted homobilayers of graphene and MX₂ transition-metal dichalcogenides. The analysis shows that the lowest gapless subband can acquire imaginary frequencies below a critical wave number, implying instability of sufficiently long straight partial and perfect dislocations, while higher subbands are gapped and lie below the interlayer shear mode frequency of the domains.Read more
Small-angle twisted homobilayer graphene in parallel-aligned (P) configuration with a single partial dislocation separating Bernal-stacked domains.2 propertiesSimulatedCStudied MaterialExpand
Small-angle twisted MoS₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedMoS₂Studied MaterialExpand
Small-angle twisted WS₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedWS₂Studied MaterialExpand
Small-angle twisted MoSe₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedMoSe₂Studied MaterialExpand
Small-angle twisted WSe₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedWSe₂Studied MaterialExpand
Small-angle twisted MoS₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.4 propertiesSimulatedMoS₂Studied MaterialExpand
Small-angle twisted WS₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.4 propertiesSimulatedWS₂Studied MaterialExpand
Small-angle twisted MoSe₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.4 propertiesSimulatedMoSe₂Studied MaterialExpand
Small-angle twisted WSe₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.3 propertiesSimulatedWSe₂Studied MaterialExpand
Research paperTheoreticalComputed PhononLong wavelength interdomain phonons and instability of dislocations in small-angle twisted bilayersV. V. EnaldievarXiv·2025·10.1038/s41467-021-25924-·arXiv:2409.04166AbstractA continuum theory is developed for long-wavelength interdomain phonons localized at dislocations separating domains in small-angle twisted homobilayers of graphene and MX₂ transition-metal dichalcogenides. The analysis shows that the lowest gapless subband can acquire imaginary frequencies below a critical wave number, implying instability of sufficiently long straight partial and perfect dislocations, while higher subbands are gapped and lie below the interlayer shear mode frequency of the domains.Read more
Small-angle twisted homobilayer graphene in parallel-aligned (P) configuration with a single partial dislocation separating Bernal-stacked domains.2 propertiesSimulatedCStudied MaterialExpand
Small-angle twisted MoS₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedMoS₂Studied MaterialExpand
Small-angle twisted WS₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedWS₂Studied MaterialExpand
Small-angle twisted MoSe₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedMoSe₂Studied MaterialExpand
Small-angle twisted WSe₂ homobilayer in parallel-aligned (P) configuration with a single partial dislocation separating rhombohedral domains.2 propertiesSimulatedWSe₂Studied MaterialExpand
Small-angle twisted MoS₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.4 propertiesSimulatedMoS₂Studied MaterialExpand
Small-angle twisted WS₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.4 propertiesSimulatedWS₂Studied MaterialExpand
Small-angle twisted MoSe₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.4 propertiesSimulatedMoSe₂Studied MaterialExpand
Small-angle twisted WSe₂ homobilayer in antiparallel-aligned (AP) configuration with a single perfect dislocation separating 2H-stacked domains.3 propertiesSimulatedWSe₂Studied MaterialExpand
