Research paperTheoreticalMagneto-transport in the monolayer MoS₂ material system for high-performance field-effect transistor applicationsAnup Kumar Mandia, Rohit Kumar, Seung-Cheol Lee, Satadeep Bhattacharjee et al.2023·10.1088/1361-6528/ad3fc2·arXiv:2312.00378AbstractElectronic transport in monolayer MoS₂ is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. The paper presents a theoretical analysis of magneto-transport in monolayer MoS₂ on different substrates using a Boltzmann transport equation framework, considering remote impurity and intrinsic/extrinsic phonon scattering mechanisms. The work reports Hall mobility, conductivity, Hall factor, and magnetoresistance as functions of temperature, carrier density, and magnetic field, and concludes that suspended monolayer MoS₂ shows a Hall factor around 1.43 at room temperature while supported substrates approach unity; MoS₂ on Al₂O₃ is identified as favorable for Hall-effect detection.Read more
Suspended monolayer MoS₂ used as the reference transport system.2 propertiesSimulatedMoS₂Studied MaterialExpand
Monolayer MoS₂ on SiO₂ substrate.2 propertiesSimulatedMoS₂Studied MaterialSiO₂Substrate / DielectricExpand
Monolayer MoS₂ on Al₂O₃ substrate.2 propertiesSimulatedMoS₂Studied MaterialAl₂O₃Substrate / DielectricExpand
Monolayer MoS₂ on HfO₂ substrate.2 propertiesSimulatedMoS₂Studied MaterialHfO₂Substrate / DielectricExpand
Research paperTheoreticalMagneto-transport in the monolayer MoS₂ material system for high-performance field-effect transistor applicationsAnup Kumar Mandia, Rohit Kumar, Seung-Cheol Lee, Satadeep Bhattacharjee et al.2023·10.1088/1361-6528/ad3fc2·arXiv:2312.00378AbstractElectronic transport in monolayer MoS₂ is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. The paper presents a theoretical analysis of magneto-transport in monolayer MoS₂ on different substrates using a Boltzmann transport equation framework, considering remote impurity and intrinsic/extrinsic phonon scattering mechanisms. The work reports Hall mobility, conductivity, Hall factor, and magnetoresistance as functions of temperature, carrier density, and magnetic field, and concludes that suspended monolayer MoS₂ shows a Hall factor around 1.43 at room temperature while supported substrates approach unity; MoS₂ on Al₂O₃ is identified as favorable for Hall-effect detection.Read more
Suspended monolayer MoS₂ used as the reference transport system.2 propertiesSimulatedMoS₂Studied MaterialExpand
Monolayer MoS₂ on SiO₂ substrate.2 propertiesSimulatedMoS₂Studied MaterialSiO₂Substrate / DielectricExpand
Monolayer MoS₂ on Al₂O₃ substrate.2 propertiesSimulatedMoS₂Studied MaterialAl₂O₃Substrate / DielectricExpand
Monolayer MoS₂ on HfO₂ substrate.2 propertiesSimulatedMoS₂Studied MaterialHfO₂Substrate / DielectricExpand
Research paperTheoreticalMagneto-transport in the monolayer MoS₂ material system for high-performance field-effect transistor applicationsAnup Kumar Mandia, Rohit Kumar, Seung-Cheol Lee, Satadeep Bhattacharjee et al.2023·10.1088/1361-6528/ad3fc2·arXiv:2312.00378AbstractElectronic transport in monolayer MoS₂ is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. The paper presents a theoretical analysis of magneto-transport in monolayer MoS₂ on different substrates using a Boltzmann transport equation framework, considering remote impurity and intrinsic/extrinsic phonon scattering mechanisms. The work reports Hall mobility, conductivity, Hall factor, and magnetoresistance as functions of temperature, carrier density, and magnetic field, and concludes that suspended monolayer MoS₂ shows a Hall factor around 1.43 at room temperature while supported substrates approach unity; MoS₂ on Al₂O₃ is identified as favorable for Hall-effect detection.Read more
Suspended monolayer MoS₂ used as the reference transport system.2 propertiesSimulatedMoS₂Studied MaterialExpand
Monolayer MoS₂ on SiO₂ substrate.2 propertiesSimulatedMoS₂Studied MaterialSiO₂Substrate / DielectricExpand
Monolayer MoS₂ on Al₂O₃ substrate.2 propertiesSimulatedMoS₂Studied MaterialAl₂O₃Substrate / DielectricExpand
Monolayer MoS₂ on HfO₂ substrate.2 propertiesSimulatedMoS₂Studied MaterialHfO₂Substrate / DielectricExpand
Research paperTheoreticalMagneto-transport in the monolayer MoS₂ material system for high-performance field-effect transistor applicationsAnup Kumar Mandia, Rohit Kumar, Seung-Cheol Lee, Satadeep Bhattacharjee et al.2023·10.1088/1361-6528/ad3fc2·arXiv:2312.00378AbstractElectronic transport in monolayer MoS₂ is significantly constrained by several extrinsic factors despite showing good prospects as a transistor channel material. The paper presents a theoretical analysis of magneto-transport in monolayer MoS₂ on different substrates using a Boltzmann transport equation framework, considering remote impurity and intrinsic/extrinsic phonon scattering mechanisms. The work reports Hall mobility, conductivity, Hall factor, and magnetoresistance as functions of temperature, carrier density, and magnetic field, and concludes that suspended monolayer MoS₂ shows a Hall factor around 1.43 at room temperature while supported substrates approach unity; MoS₂ on Al₂O₃ is identified as favorable for Hall-effect detection.Read more
Suspended monolayer MoS₂ used as the reference transport system.2 propertiesSimulatedMoS₂Studied MaterialExpand
Monolayer MoS₂ on SiO₂ substrate.2 propertiesSimulatedMoS₂Studied MaterialSiO₂Substrate / DielectricExpand
Monolayer MoS₂ on Al₂O₃ substrate.2 propertiesSimulatedMoS₂Studied MaterialAl₂O₃Substrate / DielectricExpand
Monolayer MoS₂ on HfO₂ substrate.2 propertiesSimulatedMoS₂Studied MaterialHfO₂Substrate / DielectricExpand