Abstract

The quantum geometric properties of typical diamond-type (C, Si, Ge) and zincblende-type (GaAs, InP, etc) semiconductors are investigated by means of the sp3s∗ tight-binding model, which allows to calculate the quantum metric of the valence band states throughout the entire Brillouin zone. The global maximum of the metric is at the Γ point, but other differential geometric properties like Ricci scalar, Ricci tensor, and Einstein tensor are found to vary significantly in the momentum space, indicating a highly distorted momentum space manifold. The momentum integration of the quantum metric further yields the gauge-invariant part of the spread of valence band Wannier function, whose value agrees well with that experimentally extracted from an optical sum rule of the dielectric function. Furthermore, the dependence of these geometric properties on the energy gap offers a way to quantify the quantum criticality of these common semiconductors.

Abstract

The quantum geometric properties of typical diamond-type (C, Si, Ge) and zincblende-type (GaAs, InP, etc) semiconductors are investigated by means of the sp3s∗ tight-binding model, which allows to calculate the quantum metric of the valence band states throughout the entire Brillouin zone. The global maximum of the metric is at the Γ point, but other differential geometric properties like Ricci scalar, Ricci tensor, and Einstein tensor are found to vary significantly in the momentum space, indicating a highly distorted momentum space manifold. The momentum integration of the quantum metric further yields the gauge-invariant part of the spread of valence band Wannier function, whose value agrees well with that experimentally extracted from an optical sum rule of the dielectric function. Furthermore, the dependence of these geometric properties on the energy gap offers a way to quantify the quantum criticality of these common semiconductors.

Abstract

The quantum geometric properties of typical diamond-type (C, Si, Ge) and zincblende-type (GaAs, InP, etc) semiconductors are investigated by means of the sp3s∗ tight-binding model, which allows to calculate the quantum metric of the valence band states throughout the entire Brillouin zone. The global maximum of the metric is at the Γ point, but other differential geometric properties like Ricci scalar, Ricci tensor, and Einstein tensor are found to vary significantly in the momentum space, indicating a highly distorted momentum space manifold. The momentum integration of the quantum metric further yields the gauge-invariant part of the spread of valence band Wannier function, whose value agrees well with that experimentally extracted from an optical sum rule of the dielectric function. Furthermore, the dependence of these geometric properties on the energy gap offers a way to quantify the quantum criticality of these common semiconductors.

Abstract

The quantum geometric properties of typical diamond-type (C, Si, Ge) and zincblende-type (GaAs, InP, etc) semiconductors are investigated by means of the sp3s∗ tight-binding model, which allows to calculate the quantum metric of the valence band states throughout the entire Brillouin zone. The global maximum of the metric is at the Γ point, but other differential geometric properties like Ricci scalar, Ricci tensor, and Einstein tensor are found to vary significantly in the momentum space, indicating a highly distorted momentum space manifold. The momentum integration of the quantum metric further yields the gauge-invariant part of the spread of valence band Wannier function, whose value agrees well with that experimentally extracted from an optical sum rule of the dielectric function. Furthermore, the dependence of these geometric properties on the energy gap offers a way to quantify the quantum criticality of these common semiconductors.