Abstract

A universal approach is proposed to synthesize high-quality networks of nanoribbons from arbitrary 2D materials while maintaining high crystallinity, sufficient yield, narrow size distribution, and device integrability. The method uses self-assembled organic nanostructures as masks to etch nanoribbon networks from graphene, hBN, MoS2, WS2, WSe2, and heterostructures, enabling field-effect transistor devices, Raman/PL verification, and edge decoration with plasmonic particles.

Abstract

A universal approach is proposed to synthesize high-quality networks of nanoribbons from arbitrary 2D materials while maintaining high crystallinity, sufficient yield, narrow size distribution, and device integrability. The method uses self-assembled organic nanostructures as masks to etch nanoribbon networks from graphene, hBN, MoS2, WS2, WSe2, and heterostructures, enabling field-effect transistor devices, Raman/PL verification, and edge decoration with plasmonic particles.

Abstract

A universal approach is proposed to synthesize high-quality networks of nanoribbons from arbitrary 2D materials while maintaining high crystallinity, sufficient yield, narrow size distribution, and device integrability. The method uses self-assembled organic nanostructures as masks to etch nanoribbon networks from graphene, hBN, MoS2, WS2, WSe2, and heterostructures, enabling field-effect transistor devices, Raman/PL verification, and edge decoration with plasmonic particles.

Abstract

A universal approach is proposed to synthesize high-quality networks of nanoribbons from arbitrary 2D materials while maintaining high crystallinity, sufficient yield, narrow size distribution, and device integrability. The method uses self-assembled organic nanostructures as masks to etch nanoribbon networks from graphene, hBN, MoS2, WS2, WSe2, and heterostructures, enabling field-effect transistor devices, Raman/PL verification, and edge decoration with plasmonic particles.