Research paperComputational MDTheoreticalSite-Projected Thermal Conductivity: Application to Defects, Interfaces, and Homogeneously Disordered MaterialsAashish Gautam, Yoon Gyu Lee, Chinonso Ugwumadu, Kishor Nepal et al.Physica Status Solidi RRL·2024·10.1002/pssr.202400306·arXiv:2410.03332AbstractThis study presents a site-projected thermal conductivity (SPTC) method to quantify local atomic contributions to heat transport using the Green–Kubo thermal transport formalism. The method is demonstrated on crystalline, defective, and amorphous graphene, amorphous silicon, and silicon–germanium grain-boundary and defect systems, highlighting how local thermally active sites can be identified in disordered materials.Read more
Crystalline graphene model used for site-projected thermal conductivity analysis.No measurements recordedSimulatedCStudied MaterialExpand
Crystalline graphene with a single-vacancy defect.No measurements recordedSimulatedCStudied MaterialExpand
Crystalline graphene with a double-vacancy defect.No measurements recordedSimulatedCStudied MaterialExpand
Amorphous graphene model with ring disorder, annealed at 300 K for 50 ps before relaxation.No measurements recordedSimulatedCStudied MaterialExpand
Pristine diamond-structure silicon unit-cell-derived 1000-atom supercell.No measurements recordedSimulatedSiStudied MaterialExpand
Silicon supercell containing a single-vacancy defect.No measurements recordedSimulatedSiStudied MaterialExpand
Amorphous silicon model used for temperature and frequency dependence of thermal conductivity.No measurements recordedSimulatedSiStudied MaterialExpand
Silicon–germanium alloy system used for grain-boundary and mass-defect thermal conductivity analysis.No measurements recordedSimulatedSi-GeSimulated AlloyExpand
Research paperComputational MDTheoreticalSite-Projected Thermal Conductivity: Application to Defects, Interfaces, and Homogeneously Disordered MaterialsAashish Gautam, Yoon Gyu Lee, Chinonso Ugwumadu, Kishor Nepal et al.Physica Status Solidi RRL·2024·10.1002/pssr.202400306·arXiv:2410.03332AbstractThis study presents a site-projected thermal conductivity (SPTC) method to quantify local atomic contributions to heat transport using the Green–Kubo thermal transport formalism. The method is demonstrated on crystalline, defective, and amorphous graphene, amorphous silicon, and silicon–germanium grain-boundary and defect systems, highlighting how local thermally active sites can be identified in disordered materials.Read more
Crystalline graphene model used for site-projected thermal conductivity analysis.No measurements recordedSimulatedCStudied MaterialExpand
Crystalline graphene with a single-vacancy defect.No measurements recordedSimulatedCStudied MaterialExpand
Crystalline graphene with a double-vacancy defect.No measurements recordedSimulatedCStudied MaterialExpand
Amorphous graphene model with ring disorder, annealed at 300 K for 50 ps before relaxation.No measurements recordedSimulatedCStudied MaterialExpand
Pristine diamond-structure silicon unit-cell-derived 1000-atom supercell.No measurements recordedSimulatedSiStudied MaterialExpand
Silicon supercell containing a single-vacancy defect.No measurements recordedSimulatedSiStudied MaterialExpand
Amorphous silicon model used for temperature and frequency dependence of thermal conductivity.No measurements recordedSimulatedSiStudied MaterialExpand
Silicon–germanium alloy system used for grain-boundary and mass-defect thermal conductivity analysis.No measurements recordedSimulatedSi-GeSimulated AlloyExpand
Research paperComputational MDTheoreticalSite-Projected Thermal Conductivity: Application to Defects, Interfaces, and Homogeneously Disordered MaterialsAashish Gautam, Yoon Gyu Lee, Chinonso Ugwumadu, Kishor Nepal et al.Physica Status Solidi RRL·2024·10.1002/pssr.202400306·arXiv:2410.03332AbstractThis study presents a site-projected thermal conductivity (SPTC) method to quantify local atomic contributions to heat transport using the Green–Kubo thermal transport formalism. The method is demonstrated on crystalline, defective, and amorphous graphene, amorphous silicon, and silicon–germanium grain-boundary and defect systems, highlighting how local thermally active sites can be identified in disordered materials.Read more
Crystalline graphene model used for site-projected thermal conductivity analysis.No measurements recordedSimulatedCStudied MaterialExpand
Crystalline graphene with a single-vacancy defect.No measurements recordedSimulatedCStudied MaterialExpand
Crystalline graphene with a double-vacancy defect.No measurements recordedSimulatedCStudied MaterialExpand
Amorphous graphene model with ring disorder, annealed at 300 K for 50 ps before relaxation.No measurements recordedSimulatedCStudied MaterialExpand
Pristine diamond-structure silicon unit-cell-derived 1000-atom supercell.No measurements recordedSimulatedSiStudied MaterialExpand
Silicon supercell containing a single-vacancy defect.No measurements recordedSimulatedSiStudied MaterialExpand
Amorphous silicon model used for temperature and frequency dependence of thermal conductivity.No measurements recordedSimulatedSiStudied MaterialExpand
Silicon–germanium alloy system used for grain-boundary and mass-defect thermal conductivity analysis.No measurements recordedSimulatedSi-GeSimulated AlloyExpand
Research paperComputational MDTheoreticalSite-Projected Thermal Conductivity: Application to Defects, Interfaces, and Homogeneously Disordered MaterialsAashish Gautam, Yoon Gyu Lee, Chinonso Ugwumadu, Kishor Nepal et al.Physica Status Solidi RRL·2024·10.1002/pssr.202400306·arXiv:2410.03332AbstractThis study presents a site-projected thermal conductivity (SPTC) method to quantify local atomic contributions to heat transport using the Green–Kubo thermal transport formalism. The method is demonstrated on crystalline, defective, and amorphous graphene, amorphous silicon, and silicon–germanium grain-boundary and defect systems, highlighting how local thermally active sites can be identified in disordered materials.Read more
Crystalline graphene model used for site-projected thermal conductivity analysis.No measurements recordedSimulatedCStudied MaterialExpand
Crystalline graphene with a single-vacancy defect.No measurements recordedSimulatedCStudied MaterialExpand
Crystalline graphene with a double-vacancy defect.No measurements recordedSimulatedCStudied MaterialExpand
Amorphous graphene model with ring disorder, annealed at 300 K for 50 ps before relaxation.No measurements recordedSimulatedCStudied MaterialExpand
Pristine diamond-structure silicon unit-cell-derived 1000-atom supercell.No measurements recordedSimulatedSiStudied MaterialExpand
Silicon supercell containing a single-vacancy defect.No measurements recordedSimulatedSiStudied MaterialExpand
Amorphous silicon model used for temperature and frequency dependence of thermal conductivity.No measurements recordedSimulatedSiStudied MaterialExpand
Silicon–germanium alloy system used for grain-boundary and mass-defect thermal conductivity analysis.No measurements recordedSimulatedSi-GeSimulated AlloyExpand