Research paper
Computational DFTComputed PhononTheoreticalComputational Multiscale| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Critical Electron Doping | H-phase stability limit | 238000000000000cm⁻² | — | |||
| Critical Electron Doping Range | stability range at varying electronic temperature | 1.5×10^14-2.4×10^14cm⁻² | — | |||
| Phase Transition Barrier | H to 1T' barrier | 10eV | — | |||
| Superconducting Transition Temperature Trend | Tc vs doping | dome-shaped | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Critical Electron Doping | H-phase stability limit | 238000000000000cm⁻² | — | |||
| Critical Electron Doping Range | stability range at varying electronic temperature | 1.5×10^14-2.4×10^14cm⁻² | — | |||
| Phase Transition Barrier | H to 1T' barrier | 10eV | — | |||
| Superconducting Transition Temperature Trend | Tc vs doping | dome-shaped | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Critical Electron Doping | H-phase stability limit | 238000000000000cm⁻² | — | |||
| Critical Electron Doping Range | stability range at varying electronic temperature | 1.5×10^14-2.4×10^14cm⁻² | — | |||
| Phase Transition Barrier | H to 1T' barrier | 10eV | — | |||
| Superconducting Transition Temperature Trend | Tc vs doping | dome-shaped | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Critical Electron Doping | H-phase stability limit | 238000000000000cm⁻² | — | |||
| Critical Electron Doping Range | stability range at varying electronic temperature | 1.5×10^14-2.4×10^14cm⁻² | — | |||
| Phase Transition Barrier | H to 1T' barrier | 10eV | — | |||
| Superconducting Transition Temperature Trend | Tc vs doping | dome-shaped | — |