Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Cléo Santini; Thi Huong Ngo; Luiz H. G. Tizei; Aurélie Lloret; Tom Fraysse; Sebastien Weber; Adrien Teurtrie; Virginie Brändli; Sebastien Chenot; Denis Lefebvre; Stéphane Vezian; Hugo Lourenço-Martins; Christelle Brimont; Benjamin Damilano; Thierry Guillet; Sophie Meuret

doi:10.1021/acsphotonics.3c01223

Research paper

Experimental Characterization

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Cléo Santini, Thi Huong Ngo, Luiz H. G. Tizei, Aurélie Lloret et al.

2026·10.1021/acsphotonics.3c01223·arXiv:2603.23237

Research paper

Experimental Characterization

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Cléo Santini, Thi Huong Ngo, Luiz H. G. Tizei, Aurélie Lloret et al.

2026·10.1021/acsphotonics.3c01223·arXiv:2603.23237

Research paper

Experimental Characterization

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Cléo Santini, Thi Huong Ngo, Luiz H. G. Tizei, Aurélie Lloret et al.

2026·10.1021/acsphotonics.3c01223·arXiv:2603.23237

Research paper

Experimental Characterization

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Cléo Santini, Thi Huong Ngo, Luiz H. G. Tizei, Aurélie Lloret et al.

2026·10.1021/acsphotonics.3c01223·arXiv:2603.23237

Research paper

Experimental Characterization

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Cléo Santini, Thi Huong Ngo, Luiz H. G. Tizei, Aurélie Lloret et al.

2026·10.1021/acsphotonics.3c01223·arXiv:2603.23237

Research paper

Experimental Characterization

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Cléo Santini, Thi Huong Ngo, Luiz H. G. Tizei, Aurélie Lloret et al.

2026·10.1021/acsphotonics.3c01223·arXiv:2603.23237

Research paper

Experimental Characterization

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Cléo Santini, Thi Huong Ngo, Luiz H. G. Tizei, Aurélie Lloret et al.

2026·10.1021/acsphotonics.3c01223·arXiv:2603.23237

Research paper

Experimental Characterization

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Cléo Santini, Thi Huong Ngo, Luiz H. G. Tizei, Aurélie Lloret et al.

2026·10.1021/acsphotonics.3c01223·arXiv:2603.23237

A GaN nanowire nanolaser containing 50 nm InGaN inclusions every 150 nm, studied under synchronous PINEM and micro-photoluminescence excitation.

3 characterizations11 properties2 figures

ExperimentalGaNStudied MaterialInGaNStudied Material

A GaN nanowire nanolaser containing 50 nm InGaN inclusions every 150 nm, studied under synchronous PINEM and micro-photoluminescence excitation.

3 characterizations11 properties2 figures

ExperimentalGaNStudied MaterialInGaNStudied Material

A GaN nanowire nanolaser containing 50 nm InGaN inclusions every 150 nm, studied under synchronous PINEM and micro-photoluminescence excitation.

3 characterizations11 properties2 figures

ExperimentalGaNStudied MaterialInGaNStudied Material

A GaN nanowire nanolaser containing 50 nm InGaN inclusions every 150 nm, studied under synchronous PINEM and micro-photoluminescence excitation.

3 characterizations11 properties2 figures

ExperimentalGaNStudied MaterialInGaNStudied Material

Type	Label	Value	Material	Sample	Source
Optical Band Gap	lasing mode energy	3.3eV	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Fet Threshold Voltage	pump threshold reference	0V	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	lasing threshold pump power	0.66mW	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	below-threshold pump power	0.24mW	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	electron-photon scattering amplitude g0	0.0038dimensionless	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	maximum photon population N₀	105000count	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	lasing onset time	0.85ps	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	lasing onset time	0.53ps	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	nanolaser pulse width	0.6ps	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	electron energy sideband spacing below threshold	3.6eV	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	electron energy sideband spacing above threshold	3.3eV	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—

Type	Label	Value	Material	Sample	Source
Optical Band Gap	lasing mode energy	3.3eV	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Fet Threshold Voltage	pump threshold reference	0V	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	lasing threshold pump power	0.66mW	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	below-threshold pump power	0.24mW	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	electron-photon scattering amplitude g0	0.0038dimensionless	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	maximum photon population N₀	105000count	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	lasing onset time	0.85ps	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	lasing onset time	0.53ps	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	nanolaser pulse width	0.6ps	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	electron energy sideband spacing below threshold	3.6eV	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	electron energy sideband spacing above threshold	3.3eV	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—

Type	Label	Value	Material	Sample	Source
Optical Band Gap	lasing mode energy	3.3eV	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Fet Threshold Voltage	pump threshold reference	0V	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	lasing threshold pump power	0.66mW	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	below-threshold pump power	0.24mW	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	electron-photon scattering amplitude g0	0.0038dimensionless	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	maximum photon population N₀	105000count	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	lasing onset time	0.85ps	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	lasing onset time	0.53ps	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	nanolaser pulse width	0.6ps	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	electron energy sideband spacing below threshold	3.6eV	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	electron energy sideband spacing above threshold	3.3eV	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—

Type	Label	Value	Material	Sample	Source
Optical Band Gap	lasing mode energy	3.3eV	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Fet Threshold Voltage	pump threshold reference	0V	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	lasing threshold pump power	0.66mW	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	below-threshold pump power	0.24mW	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	electron-photon scattering amplitude g0	0.0038dimensionless	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	maximum photon population N₀	105000count	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	lasing onset time	0.85ps	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	lasing onset time	0.53ps	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	nanolaser pulse width	0.6ps	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	electron energy sideband spacing below threshold	3.6eV	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—
Optical Band Gap	electron energy sideband spacing above threshold	3.3eV	GaN InGaN	A GaN nanowire nanolaser containing 50 nm InGaN inclusions e	—

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Unveiling nanolaser physics : Non-Perturbative Measurement of the Lasing-Mode Photon Population at the Sub-Picoseconds and Nanometer Scale

Samples

A GaN nanowire nanolaser containing 50 nm InGaN inclusions every 150 nm, studied under synchronous PINEM and micro-photoluminescence excitation.

Materials

Characterization

Properties

Why these are connected

Samples

A GaN nanowire nanolaser containing 50 nm InGaN inclusions every 150 nm, studied under synchronous PINEM and micro-photoluminescence excitation.

Materials

Characterization

Properties

Why these are connected

Samples

A GaN nanowire nanolaser containing 50 nm InGaN inclusions every 150 nm, studied under synchronous PINEM and micro-photoluminescence excitation.

Materials

Characterization

Properties

Why these are connected

Samples

A GaN nanowire nanolaser containing 50 nm InGaN inclusions every 150 nm, studied under synchronous PINEM and micro-photoluminescence excitation.

Materials

Characterization

Properties

Why these are connected