Research paperExperimental CharacterizationComputational DFTValley-polarized Exitonic Mott Insulator in WS₂/WSe₂ Moiré SuperlatticeZhen Lian, Yuze Meng, Lei Ma, Indrajit Maity et al.2025·10.48550/arxiv.2308.10799·arXiv:2308.10799AbstractStrongly enhanced electron-electron interaction in semiconducting moiré superlattices formed by transition metal dichalcogenide heterobilayers has led to a plethora of correlated states. This work uses photoluminescence spectroscopy and first-principles calculations to study interlayer excitons in a WS₂/WSe₂ moiré superlattice, revealing strong repulsion between excitons and correlated electrons, an excitonic Mott insulator state, and enhanced valley polarization. The paper reports stacking-dependent interlayer-exciton repulsion energies and band hierarchies for R- and H-stacked WS₂/WSe₂ moiré heterobilayers.Read more
Angle-aligned WS₂/WSe₂ moiré bilayer device R1, R-stacked (0° twisted) heterobilayer fabricated by dry pick-up and dual-gate geometry.1 preparation1 characterization4 properties1 figureExperimentalWS₂Studied MaterialWSe₂Studied MaterialExpand
Angle-aligned WS₂/WSe₂ moiré bilayer device H1, H-stacked (60° twisted) heterobilayer fabricated by dry pick-up and dual-gate geometry.1 preparation1 characterization5 properties1 figureExperimentalWS₂Studied MaterialWSe₂Studied MaterialExpand
Additional H-stacked WS₂/WSe₂ moiré bilayer device H₅ showing fractional fillings in PL data.1 preparation1 characterization1 figureExperimentalWS₂Studied MaterialWSe₂Studied MaterialExpand
First-principles simulated R-stacked WS₂/WSe₂ moiré heterobilayer.1 characterization2 properties1 figureSimulated Supercell DftWS₂Studied MaterialWSe₂Studied MaterialExpand
First-principles simulated H-stacked WS₂/WSe₂ moiré heterobilayer.1 characterization2 properties1 figureSimulated Supercell DftWS₂Studied MaterialWSe₂Studied MaterialExpand
Research paperExperimental CharacterizationComputational DFTValley-polarized Exitonic Mott Insulator in WS₂/WSe₂ Moiré SuperlatticeZhen Lian, Yuze Meng, Lei Ma, Indrajit Maity et al.2025·10.48550/arxiv.2308.10799·arXiv:2308.10799AbstractStrongly enhanced electron-electron interaction in semiconducting moiré superlattices formed by transition metal dichalcogenide heterobilayers has led to a plethora of correlated states. This work uses photoluminescence spectroscopy and first-principles calculations to study interlayer excitons in a WS₂/WSe₂ moiré superlattice, revealing strong repulsion between excitons and correlated electrons, an excitonic Mott insulator state, and enhanced valley polarization. The paper reports stacking-dependent interlayer-exciton repulsion energies and band hierarchies for R- and H-stacked WS₂/WSe₂ moiré heterobilayers.Read more
Angle-aligned WS₂/WSe₂ moiré bilayer device R1, R-stacked (0° twisted) heterobilayer fabricated by dry pick-up and dual-gate geometry.1 preparation1 characterization4 properties1 figureExperimentalWS₂Studied MaterialWSe₂Studied MaterialExpand
Angle-aligned WS₂/WSe₂ moiré bilayer device H1, H-stacked (60° twisted) heterobilayer fabricated by dry pick-up and dual-gate geometry.1 preparation1 characterization5 properties1 figureExperimentalWS₂Studied MaterialWSe₂Studied MaterialExpand
Additional H-stacked WS₂/WSe₂ moiré bilayer device H₅ showing fractional fillings in PL data.1 preparation1 characterization1 figureExperimentalWS₂Studied MaterialWSe₂Studied MaterialExpand
First-principles simulated R-stacked WS₂/WSe₂ moiré heterobilayer.1 characterization2 properties1 figureSimulated Supercell DftWS₂Studied MaterialWSe₂Studied MaterialExpand
First-principles simulated H-stacked WS₂/WSe₂ moiré heterobilayer.1 characterization2 properties1 figureSimulated Supercell DftWS₂Studied MaterialWSe₂Studied MaterialExpand
Research paperExperimental CharacterizationComputational DFTValley-polarized Exitonic Mott Insulator in WS₂/WSe₂ Moiré SuperlatticeZhen Lian, Yuze Meng, Lei Ma, Indrajit Maity et al.2025·10.48550/arxiv.2308.10799·arXiv:2308.10799AbstractStrongly enhanced electron-electron interaction in semiconducting moiré superlattices formed by transition metal dichalcogenide heterobilayers has led to a plethora of correlated states. This work uses photoluminescence spectroscopy and first-principles calculations to study interlayer excitons in a WS₂/WSe₂ moiré superlattice, revealing strong repulsion between excitons and correlated electrons, an excitonic Mott insulator state, and enhanced valley polarization. The paper reports stacking-dependent interlayer-exciton repulsion energies and band hierarchies for R- and H-stacked WS₂/WSe₂ moiré heterobilayers.Read more
Angle-aligned WS₂/WSe₂ moiré bilayer device R1, R-stacked (0° twisted) heterobilayer fabricated by dry pick-up and dual-gate geometry.1 preparation1 characterization4 properties1 figureExperimentalWS₂Studied MaterialWSe₂Studied MaterialExpand
Angle-aligned WS₂/WSe₂ moiré bilayer device H1, H-stacked (60° twisted) heterobilayer fabricated by dry pick-up and dual-gate geometry.1 preparation1 characterization5 properties1 figureExperimentalWS₂Studied MaterialWSe₂Studied MaterialExpand
Additional H-stacked WS₂/WSe₂ moiré bilayer device H₅ showing fractional fillings in PL data.1 preparation1 characterization1 figureExperimentalWS₂Studied MaterialWSe₂Studied MaterialExpand
First-principles simulated R-stacked WS₂/WSe₂ moiré heterobilayer.1 characterization2 properties1 figureSimulated Supercell DftWS₂Studied MaterialWSe₂Studied MaterialExpand
First-principles simulated H-stacked WS₂/WSe₂ moiré heterobilayer.1 characterization2 properties1 figureSimulated Supercell DftWS₂Studied MaterialWSe₂Studied MaterialExpand
Research paperExperimental CharacterizationComputational DFTValley-polarized Exitonic Mott Insulator in WS₂/WSe₂ Moiré SuperlatticeZhen Lian, Yuze Meng, Lei Ma, Indrajit Maity et al.2025·10.48550/arxiv.2308.10799·arXiv:2308.10799AbstractStrongly enhanced electron-electron interaction in semiconducting moiré superlattices formed by transition metal dichalcogenide heterobilayers has led to a plethora of correlated states. This work uses photoluminescence spectroscopy and first-principles calculations to study interlayer excitons in a WS₂/WSe₂ moiré superlattice, revealing strong repulsion between excitons and correlated electrons, an excitonic Mott insulator state, and enhanced valley polarization. The paper reports stacking-dependent interlayer-exciton repulsion energies and band hierarchies for R- and H-stacked WS₂/WSe₂ moiré heterobilayers.Read more
Angle-aligned WS₂/WSe₂ moiré bilayer device R1, R-stacked (0° twisted) heterobilayer fabricated by dry pick-up and dual-gate geometry.1 preparation1 characterization4 properties1 figureExperimentalWS₂Studied MaterialWSe₂Studied MaterialExpand
Angle-aligned WS₂/WSe₂ moiré bilayer device H1, H-stacked (60° twisted) heterobilayer fabricated by dry pick-up and dual-gate geometry.1 preparation1 characterization5 properties1 figureExperimentalWS₂Studied MaterialWSe₂Studied MaterialExpand
Additional H-stacked WS₂/WSe₂ moiré bilayer device H₅ showing fractional fillings in PL data.1 preparation1 characterization1 figureExperimentalWS₂Studied MaterialWSe₂Studied MaterialExpand
First-principles simulated R-stacked WS₂/WSe₂ moiré heterobilayer.1 characterization2 properties1 figureSimulated Supercell DftWS₂Studied MaterialWSe₂Studied MaterialExpand
First-principles simulated H-stacked WS₂/WSe₂ moiré heterobilayer.1 characterization2 properties1 figureSimulated Supercell DftWS₂Studied MaterialWSe₂Studied MaterialExpand
