Patent
US 10,704,140A SUBSTRATE HOLDER FOR GRAPHENE FILM SYNTHESIS, AND USES THEREOF
Ageeth A. Bol
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,704,140Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Accordingly,
FIG. 2 depicts a prolate quartz box 100 with one-side open, a cap 110, disposed over the one open side of box 100, and a substrate 120, located inside the …
FIG. 3. Accordingly, as further detailed herein, the use of the quasi enclosed box produces graphene films with much larger grain size, wherein grain size is …
FIG. 4 is a diagram illustrating graphene grain density information, according to an embodiment of the present invention. By way of illustration,
FIG. 5 depicts an illustration 206 of graphene grown on a copper substrate inside of a quasi-enclosed box, as described herein. It can be seen in
FIG. 6 is a flow diagram illustrating techniques for generating a graphene film, according to an embodiment of the present invention. Detailed Description of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for generating a graphene film, comprising: implementing a horizontally-oriented substrate holder having a first width and a first height, wherein the substrate holder includes (i) an open front side, (ii) two solid lateral sides each comprised of a solid material, (iii) a solid back side comprised of the solid material, (iv) a solid top comprised of the solid material, and (v) a solid bottom comprised of the solid material, wherein the one open side exposes a cavity formed within the two solid lateral sides, the solid back side, the solid top, and the solid bottom; positioning a horizontally-oriented cap with the substrate holder, wherein the cap has a second width and a second height, wherein the cap includes (i) an open back side, (ii) two solid lateral sides each comprised of solid copper foil, (111) a solid front side comprises of solid copper foil, (iv) a solid top comprised of solid copper foil, and (v) a solid bottom comprises of solid copper foil, and wherein positioning the cap comprises surrounding the open front side of the substrate holder with the open back side of the cap, thereby forming a gap between the solid top of the cap and the solid top of the substrate holder, enabling flow of one or more gases in and/or out of the substrate holder via the open back side of the cap and the open front side of the substrate holder; placing a substrate for graphene film synthesis inside of the cavity of the substrate holder; and generating a graphene film on the substrate via chemical vapor deposition[[;]]. Currently amended
The method of claim 1, wherein the substrate holder comprises [[a]] quartz. Currently amended
The method of claim 1, wherein the substrate holder comprises a high temperature inert material. Currently amended
The method of claim 1, wherein the one open side of the substrate holder includes a gap having a width in the range of from about 1 mm to 2 mm. Currently amended
The method of claim 1, wherein the substrate holder has a length determined by a chemical vapor deposition chamber size. Currently amended
The method of claim 1, wherein the substrate holder has a width determined by a chemical vapor deposition chamber size. Currently amended
The method of claim 1, wherein said generating the graphene film comprises modifying one or more dynamic flow parameters. Original
Canceled
10-12. Canceled
Canceled
The method of claim I, wherein the substrate is an inert material. Original
The method of claim I, wherein the substrate is a metal foil. Original
The method of claim 14, wherein the metal foil comprises a copper foil. Original
Layer stacks claimed or described, ordered top of device to substrate.
quasi-enclosed substrate holder with cap for graphene CVD
Materials described outside the worked examples.
graphene film
copper foil
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–2 mm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,704,140Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Accordingly,
FIG. 2 depicts a prolate quartz box 100 with one-side open, a cap 110, disposed over the one open side of box 100, and a substrate 120, located inside the …
FIG. 3. Accordingly, as further detailed herein, the use of the quasi enclosed box produces graphene films with much larger grain size, wherein grain size is …
FIG. 4 is a diagram illustrating graphene grain density information, according to an embodiment of the present invention. By way of illustration,
FIG. 5 depicts an illustration 206 of graphene grown on a copper substrate inside of a quasi-enclosed box, as described herein. It can be seen in
FIG. 6 is a flow diagram illustrating techniques for generating a graphene film, according to an embodiment of the present invention. Detailed Description of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for generating a graphene film, comprising: implementing a horizontally-oriented substrate holder having a first width and a first height, wherein the substrate holder includes (i) an open front side, (ii) two solid lateral sides each comprised of a solid material, (iii) a solid back side comprised of the solid material, (iv) a solid top comprised of the solid material, and (v) a solid bottom comprised of the solid material, wherein the one open side exposes a cavity formed within the two solid lateral sides, the solid back side, the solid top, and the solid bottom; positioning a horizontally-oriented cap with the substrate holder, wherein the cap has a second width and a second height, wherein the cap includes (i) an open back side, (ii) two solid lateral sides each comprised of solid copper foil, (111) a solid front side comprises of solid copper foil, (iv) a solid top comprised of solid copper foil, and (v) a solid bottom comprises of solid copper foil, and wherein positioning the cap comprises surrounding the open front side of the substrate holder with the open back side of the cap, thereby forming a gap between the solid top of the cap and the solid top of the substrate holder, enabling flow of one or more gases in and/or out of the substrate holder via the open back side of the cap and the open front side of the substrate holder; placing a substrate for graphene film synthesis inside of the cavity of the substrate holder; and generating a graphene film on the substrate via chemical vapor deposition[[;]]. Currently amended
The method of claim 1, wherein the substrate holder comprises [[a]] quartz. Currently amended
The method of claim 1, wherein the substrate holder comprises a high temperature inert material. Currently amended
The method of claim 1, wherein the one open side of the substrate holder includes a gap having a width in the range of from about 1 mm to 2 mm. Currently amended
The method of claim 1, wherein the substrate holder has a length determined by a chemical vapor deposition chamber size. Currently amended
The method of claim 1, wherein the substrate holder has a width determined by a chemical vapor deposition chamber size. Currently amended
The method of claim 1, wherein said generating the graphene film comprises modifying one or more dynamic flow parameters. Original
Canceled
10-12. Canceled
Canceled
The method of claim I, wherein the substrate is an inert material. Original
The method of claim I, wherein the substrate is a metal foil. Original
The method of claim 14, wherein the metal foil comprises a copper foil. Original
Layer stacks claimed or described, ordered top of device to substrate.
quasi-enclosed substrate holder with cap for graphene CVD
Materials described outside the worked examples.
graphene film
copper foil
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–2 mm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,704,140Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Accordingly,
FIG. 2 depicts a prolate quartz box 100 with one-side open, a cap 110, disposed over the one open side of box 100, and a substrate 120, located inside the …
FIG. 3. Accordingly, as further detailed herein, the use of the quasi enclosed box produces graphene films with much larger grain size, wherein grain size is …
FIG. 4 is a diagram illustrating graphene grain density information, according to an embodiment of the present invention. By way of illustration,
FIG. 5 depicts an illustration 206 of graphene grown on a copper substrate inside of a quasi-enclosed box, as described herein. It can be seen in
FIG. 6 is a flow diagram illustrating techniques for generating a graphene film, according to an embodiment of the present invention. Detailed Description of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for generating a graphene film, comprising: implementing a horizontally-oriented substrate holder having a first width and a first height, wherein the substrate holder includes (i) an open front side, (ii) two solid lateral sides each comprised of a solid material, (iii) a solid back side comprised of the solid material, (iv) a solid top comprised of the solid material, and (v) a solid bottom comprised of the solid material, wherein the one open side exposes a cavity formed within the two solid lateral sides, the solid back side, the solid top, and the solid bottom; positioning a horizontally-oriented cap with the substrate holder, wherein the cap has a second width and a second height, wherein the cap includes (i) an open back side, (ii) two solid lateral sides each comprised of solid copper foil, (111) a solid front side comprises of solid copper foil, (iv) a solid top comprised of solid copper foil, and (v) a solid bottom comprises of solid copper foil, and wherein positioning the cap comprises surrounding the open front side of the substrate holder with the open back side of the cap, thereby forming a gap between the solid top of the cap and the solid top of the substrate holder, enabling flow of one or more gases in and/or out of the substrate holder via the open back side of the cap and the open front side of the substrate holder; placing a substrate for graphene film synthesis inside of the cavity of the substrate holder; and generating a graphene film on the substrate via chemical vapor deposition[[;]]. Currently amended
The method of claim 1, wherein the substrate holder comprises [[a]] quartz. Currently amended
The method of claim 1, wherein the substrate holder comprises a high temperature inert material. Currently amended
The method of claim 1, wherein the one open side of the substrate holder includes a gap having a width in the range of from about 1 mm to 2 mm. Currently amended
The method of claim 1, wherein the substrate holder has a length determined by a chemical vapor deposition chamber size. Currently amended
The method of claim 1, wherein the substrate holder has a width determined by a chemical vapor deposition chamber size. Currently amended
The method of claim 1, wherein said generating the graphene film comprises modifying one or more dynamic flow parameters. Original
Canceled
10-12. Canceled
Canceled
The method of claim I, wherein the substrate is an inert material. Original
The method of claim I, wherein the substrate is a metal foil. Original
The method of claim 14, wherein the metal foil comprises a copper foil. Original
Layer stacks claimed or described, ordered top of device to substrate.
quasi-enclosed substrate holder with cap for graphene CVD
Materials described outside the worked examples.
graphene film
copper foil
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–2 mm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,704,140Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Accordingly,
FIG. 2 depicts a prolate quartz box 100 with one-side open, a cap 110, disposed over the one open side of box 100, and a substrate 120, located inside the …
FIG. 3. Accordingly, as further detailed herein, the use of the quasi enclosed box produces graphene films with much larger grain size, wherein grain size is …
FIG. 4 is a diagram illustrating graphene grain density information, according to an embodiment of the present invention. By way of illustration,
FIG. 5 depicts an illustration 206 of graphene grown on a copper substrate inside of a quasi-enclosed box, as described herein. It can be seen in
FIG. 6 is a flow diagram illustrating techniques for generating a graphene film, according to an embodiment of the present invention. Detailed Description of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for generating a graphene film, comprising: implementing a horizontally-oriented substrate holder having a first width and a first height, wherein the substrate holder includes (i) an open front side, (ii) two solid lateral sides each comprised of a solid material, (iii) a solid back side comprised of the solid material, (iv) a solid top comprised of the solid material, and (v) a solid bottom comprised of the solid material, wherein the one open side exposes a cavity formed within the two solid lateral sides, the solid back side, the solid top, and the solid bottom; positioning a horizontally-oriented cap with the substrate holder, wherein the cap has a second width and a second height, wherein the cap includes (i) an open back side, (ii) two solid lateral sides each comprised of solid copper foil, (111) a solid front side comprises of solid copper foil, (iv) a solid top comprised of solid copper foil, and (v) a solid bottom comprises of solid copper foil, and wherein positioning the cap comprises surrounding the open front side of the substrate holder with the open back side of the cap, thereby forming a gap between the solid top of the cap and the solid top of the substrate holder, enabling flow of one or more gases in and/or out of the substrate holder via the open back side of the cap and the open front side of the substrate holder; placing a substrate for graphene film synthesis inside of the cavity of the substrate holder; and generating a graphene film on the substrate via chemical vapor deposition[[;]]. Currently amended
The method of claim 1, wherein the substrate holder comprises [[a]] quartz. Currently amended
The method of claim 1, wherein the substrate holder comprises a high temperature inert material. Currently amended
The method of claim 1, wherein the one open side of the substrate holder includes a gap having a width in the range of from about 1 mm to 2 mm. Currently amended
The method of claim 1, wherein the substrate holder has a length determined by a chemical vapor deposition chamber size. Currently amended
The method of claim 1, wherein the substrate holder has a width determined by a chemical vapor deposition chamber size. Currently amended
The method of claim 1, wherein said generating the graphene film comprises modifying one or more dynamic flow parameters. Original
Canceled
10-12. Canceled
Canceled
The method of claim I, wherein the substrate is an inert material. Original
The method of claim I, wherein the substrate is a metal foil. Original
The method of claim 14, wherein the metal foil comprises a copper foil. Original
Layer stacks claimed or described, ordered top of device to substrate.
quasi-enclosed substrate holder with cap for graphene CVD
Materials described outside the worked examples.
graphene film
copper foil
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–2 mm | — |
Related documents with shared materials, methods, properties, or citations.
solid material (substrate holder)
quartz
SiO₂
high temperature inert material
sapphire
Al₂O₃
metal foil
large-grain graphene film
solid material (substrate holder)
quartz
SiO₂
high temperature inert material
sapphire
Al₂O₃
metal foil
large-grain graphene film
solid material (substrate holder)
quartz
SiO₂
high temperature inert material
sapphire
Al₂O₃
metal foil
large-grain graphene film
solid material (substrate holder)
quartz
SiO₂
high temperature inert material
sapphire
Al₂O₃
metal foil
large-grain graphene film