Patent
Atlas literature
Patent
US 12,641,911 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c illustrates a cross-sectional view of an example according to the prior art of an infrared-detecting pixel comprising a planar absorbing structure …
FIG. 2a illustrates a cross-sectional view of an infrared- detecting pixel comprising a superlattice according to a first 35 embodiment of the invention.
FIG. 3a illustrates a cross-sectional view of an infrared- 40 detecting pixel comprising a superlattice according to a second embodiment of the invention.
FIG. 4 illustrates curves of the results of simulation of absorption for a bilayer-based superlattice and a superlattice according to the second embodiment of …
FIG. 5a.
FIG. 6 illustrates a cross-sectional view of a device for 60 detecting infrared radiation comprising a plurality of pixels according to the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device (D₁) for detecting infrared radiation compris-ing at least one pixel (Pxl), a pixel comprising a planar absorbing structure (SPA), said planar absorbing structure (SPA) comprising: a first superlattice (SR1, SR₂) comprising a stack along a stacking direction (Z) of an elementary group (G1, G₂) of semiconductor layers, the semiconductor layers of said elementary group (G1, G₂) each being arranged in a crystalline lattice structure of unit cells; said elementary group comprising: a first layer (C₁) made of a first semiconductor (SC₁) having 30 a first bandgap (Eg₁), and a first conduction-band minimum (Ec₁); at least a second layer (C₂) made of a second semiconductor (SC₂) having a second bandgap (Eg₂), and a second conduction-band minimum (Ec₂) strictly lower than the first conduction-band mini-mum (Ec₁); a third layer (C₃) made of a third semiconductor (SC₃) having 40 a third bandgap (Eg₃) narrower than the first and second bandgaps (Eg1, Eg₂), and a third conduction-band minimum (Ec₃) strictly lower than the second conduction-band minimum (Ec₂); the elementary group (G1, G₂) being produced: in a first stacking configuration in the following order: the second layer (C₂), the third layer (C₃), the second layer (C₂), then the first layer (C₁); or in a second stacking configuration such that the third layer (C₃) is confined between the first and second layers (C1, C₂): wherein the first semiconductor (SC₁) further has a first valence-band maximum (Ev₁) and the second semiconductor (SC₂) further has a second valence-band maximum (Ev₂) strictly lower than the first valence-band maximum (Ev₁).
The device (D₁) for detecting infrared radiation as claimed in claim 1, wherein the first superlattice (SR1, SR₂) is produced by epitaxy on a substrate (Sub) made of a fourth semiconductor (SC₄) arranged in a crystalline lattice struc-ture of unit cells, said first superlattice (SR1, SR₂) being produced such that, for each semiconductor layer (C1, C2, C₃) of the first superlattice (SR1, SR₂), the lattice of a semiconductor layer (C1, C2, C₃) undergoes internal mechanical strains to match the lattice of the crystal struc-ture of the substrate (SUB).
The detecting device (D₁) as claimed in claim 16, wherein the planar absorbing structure (SPA) further com-prises a transition layer (Ctrans) made of an n-doped seventh semiconductor (SC₇) having: a seventh conduction-band minimum (Ec₇) comprised between: on the one hand the effective conduction-band mini-mum (Eceff) of the first superlattice (SR1, SR₂); and on the other hand the sixth conduction-band mini-mum (Ec₆); a seventh valence-band maximum (Ev₇) comprised between: on the one hand the effective valence-band maximum (EVeff) of the first superlattice (SR1, SR₂); and on the other hand the sixth valence-band maximum (Ev₆); the transition layer (Ctrans) being confined between the superlattice (SR1, SR₂) and the upper contact layer (CONT_ SUP).
Layer stacks claimed or described, ordered top of device to substrate.
infrared radiation detecting device with InGaAs/GaAsSb superlattice absorber on InP substrate
Materials described outside the worked examples.
GaAsySb₁-y
InxGa₁-xAs
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1c illustrates a cross-sectional view of an example according to the prior art of an infrared-detecting pixel comprising a planar absorbing structure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
effective bandgap of first superlattice (claimed range) | 400–750 meV | — |
Thickness | 2.1–2.5 µm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,641,911 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c illustrates a cross-sectional view of an example according to the prior art of an infrared-detecting pixel comprising a planar absorbing structure …
FIG. 2a illustrates a cross-sectional view of an infrared- detecting pixel comprising a superlattice according to a first 35 embodiment of the invention.
FIG. 3a illustrates a cross-sectional view of an infrared- 40 detecting pixel comprising a superlattice according to a second embodiment of the invention.
FIG. 4 illustrates curves of the results of simulation of absorption for a bilayer-based superlattice and a superlattice according to the second embodiment of …
FIG. 5a.
FIG. 6 illustrates a cross-sectional view of a device for 60 detecting infrared radiation comprising a plurality of pixels according to the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device (D₁) for detecting infrared radiation compris-ing at least one pixel (Pxl), a pixel comprising a planar absorbing structure (SPA), said planar absorbing structure (SPA) comprising: a first superlattice (SR1, SR₂) comprising a stack along a stacking direction (Z) of an elementary group (G1, G₂) of semiconductor layers, the semiconductor layers of said elementary group (G1, G₂) each being arranged in a crystalline lattice structure of unit cells; said elementary group comprising: a first layer (C₁) made of a first semiconductor (SC₁) having 30 a first bandgap (Eg₁), and a first conduction-band minimum (Ec₁); at least a second layer (C₂) made of a second semiconductor (SC₂) having a second bandgap (Eg₂), and a second conduction-band minimum (Ec₂) strictly lower than the first conduction-band mini-mum (Ec₁); a third layer (C₃) made of a third semiconductor (SC₃) having 40 a third bandgap (Eg₃) narrower than the first and second bandgaps (Eg1, Eg₂), and a third conduction-band minimum (Ec₃) strictly lower than the second conduction-band minimum (Ec₂); the elementary group (G1, G₂) being produced: in a first stacking configuration in the following order: the second layer (C₂), the third layer (C₃), the second layer (C₂), then the first layer (C₁); or in a second stacking configuration such that the third layer (C₃) is confined between the first and second layers (C1, C₂): wherein the first semiconductor (SC₁) further has a first valence-band maximum (Ev₁) and the second semiconductor (SC₂) further has a second valence-band maximum (Ev₂) strictly lower than the first valence-band maximum (Ev₁).
The device (D₁) for detecting infrared radiation as claimed in claim 1, wherein the first superlattice (SR1, SR₂) is produced by epitaxy on a substrate (Sub) made of a fourth semiconductor (SC₄) arranged in a crystalline lattice struc-ture of unit cells, said first superlattice (SR1, SR₂) being produced such that, for each semiconductor layer (C1, C2, C₃) of the first superlattice (SR1, SR₂), the lattice of a semiconductor layer (C1, C2, C₃) undergoes internal mechanical strains to match the lattice of the crystal struc-ture of the substrate (SUB).
The detecting device (D₁) as claimed in claim 16, wherein the planar absorbing structure (SPA) further com-prises a transition layer (Ctrans) made of an n-doped seventh semiconductor (SC₇) having: a seventh conduction-band minimum (Ec₇) comprised between: on the one hand the effective conduction-band mini-mum (Eceff) of the first superlattice (SR1, SR₂); and on the other hand the sixth conduction-band mini-mum (Ec₆); a seventh valence-band maximum (Ev₇) comprised between: on the one hand the effective valence-band maximum (EVeff) of the first superlattice (SR1, SR₂); and on the other hand the sixth valence-band maximum (Ev₆); the transition layer (Ctrans) being confined between the superlattice (SR1, SR₂) and the upper contact layer (CONT_ SUP).
Layer stacks claimed or described, ordered top of device to substrate.
infrared radiation detecting device with InGaAs/GaAsSb superlattice absorber on InP substrate
Materials described outside the worked examples.
GaAsySb₁-y
InxGa₁-xAs
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1c illustrates a cross-sectional view of an example according to the prior art of an infrared-detecting pixel comprising a planar absorbing structure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
effective bandgap of first superlattice (claimed range) | 400–750 meV | — |
Thickness | 2.1–2.5 µm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,641,911 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c illustrates a cross-sectional view of an example according to the prior art of an infrared-detecting pixel comprising a planar absorbing structure …
FIG. 2a illustrates a cross-sectional view of an infrared- detecting pixel comprising a superlattice according to a first 35 embodiment of the invention.
FIG. 3a illustrates a cross-sectional view of an infrared- 40 detecting pixel comprising a superlattice according to a second embodiment of the invention.
FIG. 4 illustrates curves of the results of simulation of absorption for a bilayer-based superlattice and a superlattice according to the second embodiment of …
FIG. 5a.
FIG. 6 illustrates a cross-sectional view of a device for 60 detecting infrared radiation comprising a plurality of pixels according to the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device (D₁) for detecting infrared radiation compris-ing at least one pixel (Pxl), a pixel comprising a planar absorbing structure (SPA), said planar absorbing structure (SPA) comprising: a first superlattice (SR1, SR₂) comprising a stack along a stacking direction (Z) of an elementary group (G1, G₂) of semiconductor layers, the semiconductor layers of said elementary group (G1, G₂) each being arranged in a crystalline lattice structure of unit cells; said elementary group comprising: a first layer (C₁) made of a first semiconductor (SC₁) having 30 a first bandgap (Eg₁), and a first conduction-band minimum (Ec₁); at least a second layer (C₂) made of a second semiconductor (SC₂) having a second bandgap (Eg₂), and a second conduction-band minimum (Ec₂) strictly lower than the first conduction-band mini-mum (Ec₁); a third layer (C₃) made of a third semiconductor (SC₃) having 40 a third bandgap (Eg₃) narrower than the first and second bandgaps (Eg1, Eg₂), and a third conduction-band minimum (Ec₃) strictly lower than the second conduction-band minimum (Ec₂); the elementary group (G1, G₂) being produced: in a first stacking configuration in the following order: the second layer (C₂), the third layer (C₃), the second layer (C₂), then the first layer (C₁); or in a second stacking configuration such that the third layer (C₃) is confined between the first and second layers (C1, C₂): wherein the first semiconductor (SC₁) further has a first valence-band maximum (Ev₁) and the second semiconductor (SC₂) further has a second valence-band maximum (Ev₂) strictly lower than the first valence-band maximum (Ev₁).
The device (D₁) for detecting infrared radiation as claimed in claim 1, wherein the first superlattice (SR1, SR₂) is produced by epitaxy on a substrate (Sub) made of a fourth semiconductor (SC₄) arranged in a crystalline lattice struc-ture of unit cells, said first superlattice (SR1, SR₂) being produced such that, for each semiconductor layer (C1, C2, C₃) of the first superlattice (SR1, SR₂), the lattice of a semiconductor layer (C1, C2, C₃) undergoes internal mechanical strains to match the lattice of the crystal struc-ture of the substrate (SUB).
The detecting device (D₁) as claimed in claim 16, wherein the planar absorbing structure (SPA) further com-prises a transition layer (Ctrans) made of an n-doped seventh semiconductor (SC₇) having: a seventh conduction-band minimum (Ec₇) comprised between: on the one hand the effective conduction-band mini-mum (Eceff) of the first superlattice (SR1, SR₂); and on the other hand the sixth conduction-band mini-mum (Ec₆); a seventh valence-band maximum (Ev₇) comprised between: on the one hand the effective valence-band maximum (EVeff) of the first superlattice (SR1, SR₂); and on the other hand the sixth valence-band maximum (Ev₆); the transition layer (Ctrans) being confined between the superlattice (SR1, SR₂) and the upper contact layer (CONT_ SUP).
Layer stacks claimed or described, ordered top of device to substrate.
infrared radiation detecting device with InGaAs/GaAsSb superlattice absorber on InP substrate
Materials described outside the worked examples.
GaAsySb₁-y
InxGa₁-xAs
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1c illustrates a cross-sectional view of an example according to the prior art of an infrared-detecting pixel comprising a planar absorbing structure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
effective bandgap of first superlattice (claimed range) | 400–750 meV | — |
Thickness | 2.1–2.5 µm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,641,911 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1c illustrates a cross-sectional view of an example according to the prior art of an infrared-detecting pixel comprising a planar absorbing structure …
FIG. 2a illustrates a cross-sectional view of an infrared- detecting pixel comprising a superlattice according to a first 35 embodiment of the invention.
FIG. 3a illustrates a cross-sectional view of an infrared- 40 detecting pixel comprising a superlattice according to a second embodiment of the invention.
FIG. 4 illustrates curves of the results of simulation of absorption for a bilayer-based superlattice and a superlattice according to the second embodiment of …
FIG. 5a.
FIG. 6 illustrates a cross-sectional view of a device for 60 detecting infrared radiation comprising a plurality of pixels according to the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device (D₁) for detecting infrared radiation compris-ing at least one pixel (Pxl), a pixel comprising a planar absorbing structure (SPA), said planar absorbing structure (SPA) comprising: a first superlattice (SR1, SR₂) comprising a stack along a stacking direction (Z) of an elementary group (G1, G₂) of semiconductor layers, the semiconductor layers of said elementary group (G1, G₂) each being arranged in a crystalline lattice structure of unit cells; said elementary group comprising: a first layer (C₁) made of a first semiconductor (SC₁) having 30 a first bandgap (Eg₁), and a first conduction-band minimum (Ec₁); at least a second layer (C₂) made of a second semiconductor (SC₂) having a second bandgap (Eg₂), and a second conduction-band minimum (Ec₂) strictly lower than the first conduction-band mini-mum (Ec₁); a third layer (C₃) made of a third semiconductor (SC₃) having 40 a third bandgap (Eg₃) narrower than the first and second bandgaps (Eg1, Eg₂), and a third conduction-band minimum (Ec₃) strictly lower than the second conduction-band minimum (Ec₂); the elementary group (G1, G₂) being produced: in a first stacking configuration in the following order: the second layer (C₂), the third layer (C₃), the second layer (C₂), then the first layer (C₁); or in a second stacking configuration such that the third layer (C₃) is confined between the first and second layers (C1, C₂): wherein the first semiconductor (SC₁) further has a first valence-band maximum (Ev₁) and the second semiconductor (SC₂) further has a second valence-band maximum (Ev₂) strictly lower than the first valence-band maximum (Ev₁).
The device (D₁) for detecting infrared radiation as claimed in claim 1, wherein the first superlattice (SR1, SR₂) is produced by epitaxy on a substrate (Sub) made of a fourth semiconductor (SC₄) arranged in a crystalline lattice struc-ture of unit cells, said first superlattice (SR1, SR₂) being produced such that, for each semiconductor layer (C1, C2, C₃) of the first superlattice (SR1, SR₂), the lattice of a semiconductor layer (C1, C2, C₃) undergoes internal mechanical strains to match the lattice of the crystal struc-ture of the substrate (SUB).
The detecting device (D₁) as claimed in claim 16, wherein the planar absorbing structure (SPA) further com-prises a transition layer (Ctrans) made of an n-doped seventh semiconductor (SC₇) having: a seventh conduction-band minimum (Ec₇) comprised between: on the one hand the effective conduction-band mini-mum (Eceff) of the first superlattice (SR1, SR₂); and on the other hand the sixth conduction-band mini-mum (Ec₆); a seventh valence-band maximum (Ev₇) comprised between: on the one hand the effective valence-band maximum (EVeff) of the first superlattice (SR1, SR₂); and on the other hand the sixth valence-band maximum (Ev₆); the transition layer (Ctrans) being confined between the superlattice (SR1, SR₂) and the upper contact layer (CONT_ SUP).
Layer stacks claimed or described, ordered top of device to substrate.
infrared radiation detecting device with InGaAs/GaAsSb superlattice absorber on InP substrate
Materials described outside the worked examples.
GaAsySb₁-y
InxGa₁-xAs
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1c illustrates a cross-sectional view of an example according to the prior art of an infrared-detecting pixel comprising a planar absorbing structure …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
effective bandgap of first superlattice (claimed range) | 400–750 meV | — |
Thickness | 2.1–2.5 µm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 2
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
InAs
indium phosphide
InP
FIG. 2a illustrates a cross-sectional view of an infrared- detecting pixel comprising a superlattice according to a first 35 embodiment of the invention.
FIG. 3a illustrates a cross-sectional view of an infrared- 40 detecting pixel comprising a superlattice according to a second embodiment of the invention.
FIG. 4 illustrates curves of the results of simulation of absorption for a bilayer-based superlattice and a superlattice according to the second embodiment of …
FIG. 6 illustrates a cross-sectional view of a device for 60 detecting infrared radiation comprising a plurality of pixels according to the invention.
| — |
Thickness | 1.6–3.1 µm | — |
Thickness | 1–3 µm | — |
Thickness | 2.9–20 nm | — |
Thickness | 0.3–10 nm | — |
InAs
indium phosphide
InP
FIG. 2a illustrates a cross-sectional view of an infrared- detecting pixel comprising a superlattice according to a first 35 embodiment of the invention.
FIG. 3a illustrates a cross-sectional view of an infrared- 40 detecting pixel comprising a superlattice according to a second embodiment of the invention.
FIG. 4 illustrates curves of the results of simulation of absorption for a bilayer-based superlattice and a superlattice according to the second embodiment of …
FIG. 6 illustrates a cross-sectional view of a device for 60 detecting infrared radiation comprising a plurality of pixels according to the invention.
| — |
Thickness | 1.6–3.1 µm | — |
Thickness | 1–3 µm | — |
Thickness | 2.9–20 nm | — |
Thickness | 0.3–10 nm | — |
InAs
indium phosphide
InP
FIG. 2a illustrates a cross-sectional view of an infrared- detecting pixel comprising a superlattice according to a first 35 embodiment of the invention.
FIG. 3a illustrates a cross-sectional view of an infrared- 40 detecting pixel comprising a superlattice according to a second embodiment of the invention.
FIG. 4 illustrates curves of the results of simulation of absorption for a bilayer-based superlattice and a superlattice according to the second embodiment of …
FIG. 6 illustrates a cross-sectional view of a device for 60 detecting infrared radiation comprising a plurality of pixels according to the invention.
| — |
Thickness | 1.6–3.1 µm | — |
Thickness | 1–3 µm | — |
Thickness | 2.9–20 nm | — |
Thickness | 0.3–10 nm | — |
InAs
indium phosphide
InP
FIG. 2a illustrates a cross-sectional view of an infrared- detecting pixel comprising a superlattice according to a first 35 embodiment of the invention.
FIG. 3a illustrates a cross-sectional view of an infrared- 40 detecting pixel comprising a superlattice according to a second embodiment of the invention.
FIG. 4 illustrates curves of the results of simulation of absorption for a bilayer-based superlattice and a superlattice according to the second embodiment of …
FIG. 6 illustrates a cross-sectional view of a device for 60 detecting infrared radiation comprising a plurality of pixels according to the invention.
| — |
Thickness | 1.6–3.1 µm | — |
Thickness | 1–3 µm | — |
Thickness | 2.9–20 nm | — |
Thickness | 0.3–10 nm | — |
