(Curren t ly a m ended) A method of producing d oped graphene for semiconductor applications, compris ing 1) adding a carbon hali d e precursor an d an alkali metal or alkaline earth metal to a closed container, 2) adding a boron precursor and a nitrogen precursor to the closed container, and 3) raisin g the internal temperature of the closed container to 50 0 C to400 0 C-and maintaining the temperature [[.]] within the closed container, wherein the carbon halide precursor is selected from the group consisting of CF, CF 4, CF-CCl/j. C 2 CI 4,(CC] 6, C 6 C,E CBr a B Br 6 Cl 4. Cfl 91 I, and mixtures thereof, the boron precursor is selected from the group consisting of BF, BF ~ BCI 3, BBr. B, and mixturesthereof, wherein the nitrogen precur sor -is-sel ecte d from the group_.consis ting of N.,NatNV, _ I t NBr_ N13NH ~ NII Cl, NF 5, N F. N C 4. and mixtures thereof, wherein 0,01% to 5.00 9% ofthe boron precursor and 0.01% to 5.00% ofnitrogen precursor are co-doped into graphene.
14
Dependent← claim 9carbon halide precursoralkali metal or alkaline earth metal
The m ethod according to claim 9, wherein, in step 1), the carbon precursor and the alkali metal or alkaline earth metal are added in a m ount s of 0.01 to 20% by volume.
17
Dependent← claim 9carbon halide precursoralkali metal or alkaline earth metal
The m ethod according to claim 9, wherein, in step 1), the carbon precursor and the alkali metal or alkaline earth metal are added in a total amount of 10 to 3 0% by volume, based on the volume of the closed container.
10
Independent
- 1 3.. canceled
11
Independent
canceled
12
Independent
canceled
13
Independent
canceled
15
Independent
15.. canceled
Materials
Materials described outside the worked examples.
carbon halide precursor
Carbon Precursor
boron precursor
Boron Dopant Precursor
Process steps
Additional fabrication and treatment steps described in the patent.
1
Solid State Synthesis
Step 1
Ambient
closed container
Process details
temperature c max:4000
temperature c min:500
temperature range:
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Duration
0.5–12 hours
—
Patent
Atlas literature
Patent
US 9,490,040
Boron/Nitrogen Co-Doped Graphene for Semiconductor Applications and Method of Producing the Same
Jong-Beom Baek
US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Curren t ly a m ended) A method of producing d oped graphene for semiconductor applications, compris ing 1) adding a carbon hali d e precursor an d an alkali metal or alkaline earth metal to a closed container, 2) adding a boron precursor and a nitrogen precursor to the closed container, and 3) raisin g the internal temperature of the closed container to 50 0 C to400 0 C-and maintaining the temperature [[.]] within the closed container, wherein the carbon halide precursor is selected from the group consisting of CF, CF 4, CF-CCl/j. C 2 CI 4,(CC] 6, C 6 C,E CBr a B Br 6 Cl 4. Cfl 91 I, and mixtures thereof, the boron precursor is selected from the group consisting of BF, BF ~ BCI 3, BBr. B, and mixturesthereof, wherein the nitrogen precur sor -is-sel ecte d from the group_.consis ting of N.,NatNV, _ I t NBr_ N13NH ~ NII Cl, NF 5, N F. N C 4. and mixtures thereof, wherein 0,01% to 5.00 9% ofthe boron precursor and 0.01% to 5.00% ofnitrogen precursor are co-doped into graphene.
14
Dependent← claim 9carbon halide precursoralkali metal or alkaline earth metal
The m ethod according to claim 9, wherein, in step 1), the carbon precursor and the alkali metal or alkaline earth metal are added in a m ount s of 0.01 to 20% by volume.
17
Dependent← claim 9carbon halide precursoralkali metal or alkaline earth metal
The m ethod according to claim 9, wherein, in step 1), the carbon precursor and the alkali metal or alkaline earth metal are added in a total amount of 10 to 3 0% by volume, based on the volume of the closed container.
10
Independent
- 1 3.. canceled
11
Independent
canceled
12
Independent
canceled
13
Independent
canceled
15
Independent
15.. canceled
Materials
Materials described outside the worked examples.
carbon halide precursor
Carbon Precursor
boron precursor
Boron Dopant Precursor
Process steps
Additional fabrication and treatment steps described in the patent.
1
Solid State Synthesis
Step 1
Ambient
closed container
Process details
temperature c max:4000
temperature c min:500
temperature range:
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Duration
0.5–12 hours
—
Patent
Atlas literature
Patent
US 9,490,040
Boron/Nitrogen Co-Doped Graphene for Semiconductor Applications and Method of Producing the Same
Jong-Beom Baek
US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Curren t ly a m ended) A method of producing d oped graphene for semiconductor applications, compris ing 1) adding a carbon hali d e precursor an d an alkali metal or alkaline earth metal to a closed container, 2) adding a boron precursor and a nitrogen precursor to the closed container, and 3) raisin g the internal temperature of the closed container to 50 0 C to400 0 C-and maintaining the temperature [[.]] within the closed container, wherein the carbon halide precursor is selected from the group consisting of CF, CF 4, CF-CCl/j. C 2 CI 4,(CC] 6, C 6 C,E CBr a B Br 6 Cl 4. Cfl 91 I, and mixtures thereof, the boron precursor is selected from the group consisting of BF, BF ~ BCI 3, BBr. B, and mixturesthereof, wherein the nitrogen precur sor -is-sel ecte d from the group_.consis ting of N.,NatNV, _ I t NBr_ N13NH ~ NII Cl, NF 5, N F. N C 4. and mixtures thereof, wherein 0,01% to 5.00 9% ofthe boron precursor and 0.01% to 5.00% ofnitrogen precursor are co-doped into graphene.
14
Dependent← claim 9carbon halide precursoralkali metal or alkaline earth metal
The m ethod according to claim 9, wherein, in step 1), the carbon precursor and the alkali metal or alkaline earth metal are added in a m ount s of 0.01 to 20% by volume.
17
Dependent← claim 9carbon halide precursoralkali metal or alkaline earth metal
The m ethod according to claim 9, wherein, in step 1), the carbon precursor and the alkali metal or alkaline earth metal are added in a total amount of 10 to 3 0% by volume, based on the volume of the closed container.
10
Independent
- 1 3.. canceled
11
Independent
canceled
12
Independent
canceled
13
Independent
canceled
15
Independent
15.. canceled
Materials
Materials described outside the worked examples.
carbon halide precursor
Carbon Precursor
boron precursor
Boron Dopant Precursor
Process steps
Additional fabrication and treatment steps described in the patent.
1
Solid State Synthesis
Step 1
Ambient
closed container
Process details
temperature c max:4000
temperature c min:500
temperature range:
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Duration
0.5–12 hours
—
Patent
Atlas literature
Patent
US 9,490,040
Boron/Nitrogen Co-Doped Graphene for Semiconductor Applications and Method of Producing the Same
Jong-Beom Baek
US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Curren t ly a m ended) A method of producing d oped graphene for semiconductor applications, compris ing 1) adding a carbon hali d e precursor an d an alkali metal or alkaline earth metal to a closed container, 2) adding a boron precursor and a nitrogen precursor to the closed container, and 3) raisin g the internal temperature of the closed container to 50 0 C to400 0 C-and maintaining the temperature [[.]] within the closed container, wherein the carbon halide precursor is selected from the group consisting of CF, CF 4, CF-CCl/j. C 2 CI 4,(CC] 6, C 6 C,E CBr a B Br 6 Cl 4. Cfl 91 I, and mixtures thereof, the boron precursor is selected from the group consisting of BF, BF ~ BCI 3, BBr. B, and mixturesthereof, wherein the nitrogen precur sor -is-sel ecte d from the group_.consis ting of N.,NatNV, _ I t NBr_ N13NH ~ NII Cl, NF 5, N F. N C 4. and mixtures thereof, wherein 0,01% to 5.00 9% ofthe boron precursor and 0.01% to 5.00% ofnitrogen precursor are co-doped into graphene.
14
Dependent← claim 9carbon halide precursoralkali metal or alkaline earth metal
The m ethod according to claim 9, wherein, in step 1), the carbon precursor and the alkali metal or alkaline earth metal are added in a m ount s of 0.01 to 20% by volume.
17
Dependent← claim 9carbon halide precursoralkali metal or alkaline earth metal
The m ethod according to claim 9, wherein, in step 1), the carbon precursor and the alkali metal or alkaline earth metal are added in a total amount of 10 to 3 0% by volume, based on the volume of the closed container.
10
Independent
- 1 3.. canceled
11
Independent
canceled
12
Independent
canceled
13
Independent
canceled
15
Independent
15.. canceled
Materials
Materials described outside the worked examples.
carbon halide precursor
Carbon Precursor
boron precursor
Boron Dopant Precursor
Process steps
Additional fabrication and treatment steps described in the patent.
1
Solid State Synthesis
Step 1
Ambient
closed container
Process details
temperature c max:4000
temperature c min:500
temperature range:
Reported properties
Performance values and ranges asserted in the specification or claims.
