Patent
Atlas literature
Patent
US 12,292,625 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic layout of a tunable laser as commonly employed in a Photonic Integrated Circuit, PIC.
FIG. 2 illustrates voltage levels measured on the different Electro-Refractive modulators, ERMs, as a function of the voltage applied to the ERM in the long …
FIG. 3b illustrates the different layers of a device accord- ing to the present disclosure.
FIG. 4 illustrates a cross section of a grounded waveguide section according to the present disclosure.
FIG. 5 illustrates a three dimensional sketch of a wave- guide ridge with two isolation section, a grounding section and an opening to a substrate layer. 15
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts, the at least one conductive contact extending over substantially the entire waveguide; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact.
The photonic integrated circuit according to claim 1, wherein at least one of: the isolator is between the optical element and the at least one conductive contact; the at least one conductive contact is on both sides of the optical element with respect to a direction of the light waves in the waveguide; the isolator is between the optical element and the at least one conductive contact; or the at least one conductive contact extends over substan-tially the entire waveguide.
The photonic integrated circuit according to claim 1, wherein the at least one conductive contact is connected to an electrical ground.
The photonic integrated circuit according to claim 1, wherein at least one of: the photonic integrated circuit comprises a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers forming at least one of a PIN or PN structure, and the waveguide layer is one of the plurality of semiconductor layer; or the optical element is operable in reverse bias mode.
The photonic integrated circuit in accordance with claim 1, wherein the at least one conductive contact com-prises at least one of: titanium, gold, or platinum.
The photonic integrated circuit according to claim 1, wherein a length of the at least one conductive contact measured in a direction of propagation of light in the waveguide layer is at least 20 micrometers.
A method of fabricating a photonic integrated circuit comprising: 10 a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer arranged for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact, wherein the optical element com-prises at least one of: an electro-refractive modulator, or a photodetector.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact, wherein the optical element com-prises at least one of: an electro-refractive modulator, or a photodetector.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; 40 a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; an isolator between the contact layer and the at least one conductive contact; and an asymmetric Mach Zehnder interferometer connected to the waveguide.
The photonic integrated circuit according to claim 9, comprising a plurality of asymmetric Mach Zehnder interferometers connected to the waveguide.
A method of fabricating a photonic integrated circuit comprising: 55 a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts, wherein the at least one conduc-tive contact extends over substantially the entire wave-guide; an optical element comprising a second part of the wave-guide layer, and a contact layer arranged for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact.
The method according to claim 11, wherein the isolator is between the optical element and the at least one conductive contact.
The method according to claim 11, wherein the at least one conductive contact is on both sides of the optical element with respect to a direction of the light waves in the waveguide.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; an isolator between the contact layer and the at least one conductive contact; and a grounding hole arranged for contact between a conduc-tive contact and an n-doped layer wherein distance between an edge of the grounding hole and the wave-guide is at least 10 micrometers, the distance being measured in a direction perpendicular to that of propa-gation of light in the waveguide layer.
The photonic integrated circuit according to claim 14, wherein at least one dimension of a cross section of the grounding hole in a plane parallel to the direction of propa-gation of light in the waveguide layer is at least 20 microm-eters.
A method of fabricating a photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer arranged for connection to a voltage source; an isolator between the contact layer and the at least one conductive contact; and an asymmetric Mach Zehnder interferometer connected to the waveguide.
The photonic integrated circuit according to claim 16, comprising a plurality of asymmetric Mach Zehnder interferometers connected to the waveguide. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
photonic integrated circuit with waveguide, optical element, isolator, and conductive contacts
asymmetric Mach Zehnder interferometer (AMZI)
No layer stack recorded.
Materials described outside the worked examples.
titanium
Ti
gold
Au
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 75–500 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 27
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,292,625 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic layout of a tunable laser as commonly employed in a Photonic Integrated Circuit, PIC.
FIG. 2 illustrates voltage levels measured on the different Electro-Refractive modulators, ERMs, as a function of the voltage applied to the ERM in the long …
FIG. 3b illustrates the different layers of a device accord- ing to the present disclosure.
FIG. 4 illustrates a cross section of a grounded waveguide section according to the present disclosure.
FIG. 5 illustrates a three dimensional sketch of a wave- guide ridge with two isolation section, a grounding section and an opening to a substrate layer. 15
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts, the at least one conductive contact extending over substantially the entire waveguide; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact.
The photonic integrated circuit according to claim 1, wherein at least one of: the isolator is between the optical element and the at least one conductive contact; the at least one conductive contact is on both sides of the optical element with respect to a direction of the light waves in the waveguide; the isolator is between the optical element and the at least one conductive contact; or the at least one conductive contact extends over substan-tially the entire waveguide.
The photonic integrated circuit according to claim 1, wherein the at least one conductive contact is connected to an electrical ground.
The photonic integrated circuit according to claim 1, wherein at least one of: the photonic integrated circuit comprises a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers forming at least one of a PIN or PN structure, and the waveguide layer is one of the plurality of semiconductor layer; or the optical element is operable in reverse bias mode.
The photonic integrated circuit in accordance with claim 1, wherein the at least one conductive contact com-prises at least one of: titanium, gold, or platinum.
The photonic integrated circuit according to claim 1, wherein a length of the at least one conductive contact measured in a direction of propagation of light in the waveguide layer is at least 20 micrometers.
A method of fabricating a photonic integrated circuit comprising: 10 a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer arranged for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact, wherein the optical element com-prises at least one of: an electro-refractive modulator, or a photodetector.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact, wherein the optical element com-prises at least one of: an electro-refractive modulator, or a photodetector.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; 40 a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; an isolator between the contact layer and the at least one conductive contact; and an asymmetric Mach Zehnder interferometer connected to the waveguide.
The photonic integrated circuit according to claim 9, comprising a plurality of asymmetric Mach Zehnder interferometers connected to the waveguide.
A method of fabricating a photonic integrated circuit comprising: 55 a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts, wherein the at least one conduc-tive contact extends over substantially the entire wave-guide; an optical element comprising a second part of the wave-guide layer, and a contact layer arranged for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact.
The method according to claim 11, wherein the isolator is between the optical element and the at least one conductive contact.
The method according to claim 11, wherein the at least one conductive contact is on both sides of the optical element with respect to a direction of the light waves in the waveguide.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; an isolator between the contact layer and the at least one conductive contact; and a grounding hole arranged for contact between a conduc-tive contact and an n-doped layer wherein distance between an edge of the grounding hole and the wave-guide is at least 10 micrometers, the distance being measured in a direction perpendicular to that of propa-gation of light in the waveguide layer.
The photonic integrated circuit according to claim 14, wherein at least one dimension of a cross section of the grounding hole in a plane parallel to the direction of propa-gation of light in the waveguide layer is at least 20 microm-eters.
A method of fabricating a photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer arranged for connection to a voltage source; an isolator between the contact layer and the at least one conductive contact; and an asymmetric Mach Zehnder interferometer connected to the waveguide.
The photonic integrated circuit according to claim 16, comprising a plurality of asymmetric Mach Zehnder interferometers connected to the waveguide. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
photonic integrated circuit with waveguide, optical element, isolator, and conductive contacts
asymmetric Mach Zehnder interferometer (AMZI)
No layer stack recorded.
Materials described outside the worked examples.
titanium
Ti
gold
Au
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 75–500 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 27
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,292,625 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic layout of a tunable laser as commonly employed in a Photonic Integrated Circuit, PIC.
FIG. 2 illustrates voltage levels measured on the different Electro-Refractive modulators, ERMs, as a function of the voltage applied to the ERM in the long …
FIG. 3b illustrates the different layers of a device accord- ing to the present disclosure.
FIG. 4 illustrates a cross section of a grounded waveguide section according to the present disclosure.
FIG. 5 illustrates a three dimensional sketch of a wave- guide ridge with two isolation section, a grounding section and an opening to a substrate layer. 15
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts, the at least one conductive contact extending over substantially the entire waveguide; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact.
The photonic integrated circuit according to claim 1, wherein at least one of: the isolator is between the optical element and the at least one conductive contact; the at least one conductive contact is on both sides of the optical element with respect to a direction of the light waves in the waveguide; the isolator is between the optical element and the at least one conductive contact; or the at least one conductive contact extends over substan-tially the entire waveguide.
The photonic integrated circuit according to claim 1, wherein the at least one conductive contact is connected to an electrical ground.
The photonic integrated circuit according to claim 1, wherein at least one of: the photonic integrated circuit comprises a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers forming at least one of a PIN or PN structure, and the waveguide layer is one of the plurality of semiconductor layer; or the optical element is operable in reverse bias mode.
The photonic integrated circuit in accordance with claim 1, wherein the at least one conductive contact com-prises at least one of: titanium, gold, or platinum.
The photonic integrated circuit according to claim 1, wherein a length of the at least one conductive contact measured in a direction of propagation of light in the waveguide layer is at least 20 micrometers.
A method of fabricating a photonic integrated circuit comprising: 10 a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer arranged for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact, wherein the optical element com-prises at least one of: an electro-refractive modulator, or a photodetector.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact, wherein the optical element com-prises at least one of: an electro-refractive modulator, or a photodetector.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; 40 a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; an isolator between the contact layer and the at least one conductive contact; and an asymmetric Mach Zehnder interferometer connected to the waveguide.
The photonic integrated circuit according to claim 9, comprising a plurality of asymmetric Mach Zehnder interferometers connected to the waveguide.
A method of fabricating a photonic integrated circuit comprising: 55 a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts, wherein the at least one conduc-tive contact extends over substantially the entire wave-guide; an optical element comprising a second part of the wave-guide layer, and a contact layer arranged for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact.
The method according to claim 11, wherein the isolator is between the optical element and the at least one conductive contact.
The method according to claim 11, wherein the at least one conductive contact is on both sides of the optical element with respect to a direction of the light waves in the waveguide.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; an isolator between the contact layer and the at least one conductive contact; and a grounding hole arranged for contact between a conduc-tive contact and an n-doped layer wherein distance between an edge of the grounding hole and the wave-guide is at least 10 micrometers, the distance being measured in a direction perpendicular to that of propa-gation of light in the waveguide layer.
The photonic integrated circuit according to claim 14, wherein at least one dimension of a cross section of the grounding hole in a plane parallel to the direction of propa-gation of light in the waveguide layer is at least 20 microm-eters.
A method of fabricating a photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer arranged for connection to a voltage source; an isolator between the contact layer and the at least one conductive contact; and an asymmetric Mach Zehnder interferometer connected to the waveguide.
The photonic integrated circuit according to claim 16, comprising a plurality of asymmetric Mach Zehnder interferometers connected to the waveguide. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
photonic integrated circuit with waveguide, optical element, isolator, and conductive contacts
asymmetric Mach Zehnder interferometer (AMZI)
No layer stack recorded.
Materials described outside the worked examples.
titanium
Ti
gold
Au
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 75–500 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 27
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,292,625 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic layout of a tunable laser as commonly employed in a Photonic Integrated Circuit, PIC.
FIG. 2 illustrates voltage levels measured on the different Electro-Refractive modulators, ERMs, as a function of the voltage applied to the ERM in the long …
FIG. 3b illustrates the different layers of a device accord- ing to the present disclosure.
FIG. 4 illustrates a cross section of a grounded waveguide section according to the present disclosure.
FIG. 5 illustrates a three dimensional sketch of a wave- guide ridge with two isolation section, a grounding section and an opening to a substrate layer. 15
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts, the at least one conductive contact extending over substantially the entire waveguide; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact.
The photonic integrated circuit according to claim 1, wherein at least one of: the isolator is between the optical element and the at least one conductive contact; the at least one conductive contact is on both sides of the optical element with respect to a direction of the light waves in the waveguide; the isolator is between the optical element and the at least one conductive contact; or the at least one conductive contact extends over substan-tially the entire waveguide.
The photonic integrated circuit according to claim 1, wherein the at least one conductive contact is connected to an electrical ground.
The photonic integrated circuit according to claim 1, wherein at least one of: the photonic integrated circuit comprises a plurality of semiconductor layers on a substrate, the plurality of semiconductor layers forming at least one of a PIN or PN structure, and the waveguide layer is one of the plurality of semiconductor layer; or the optical element is operable in reverse bias mode.
The photonic integrated circuit in accordance with claim 1, wherein the at least one conductive contact com-prises at least one of: titanium, gold, or platinum.
The photonic integrated circuit according to claim 1, wherein a length of the at least one conductive contact measured in a direction of propagation of light in the waveguide layer is at least 20 micrometers.
A method of fabricating a photonic integrated circuit comprising: 10 a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer arranged for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact, wherein the optical element com-prises at least one of: an electro-refractive modulator, or a photodetector.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact, wherein the optical element com-prises at least one of: an electro-refractive modulator, or a photodetector.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; 40 a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; an isolator between the contact layer and the at least one conductive contact; and an asymmetric Mach Zehnder interferometer connected to the waveguide.
The photonic integrated circuit according to claim 9, comprising a plurality of asymmetric Mach Zehnder interferometers connected to the waveguide.
A method of fabricating a photonic integrated circuit comprising: 55 a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts, wherein the at least one conduc-tive contact extends over substantially the entire wave-guide; an optical element comprising a second part of the wave-guide layer, and a contact layer arranged for connection to a voltage source; and an isolator between the contact layer and the at least one conductive contact.
The method according to claim 11, wherein the isolator is between the optical element and the at least one conductive contact.
The method according to claim 11, wherein the at least one conductive contact is on both sides of the optical element with respect to a direction of the light waves in the waveguide.
A photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer for connection to a voltage source; an isolator between the contact layer and the at least one conductive contact; and a grounding hole arranged for contact between a conduc-tive contact and an n-doped layer wherein distance between an edge of the grounding hole and the wave-guide is at least 10 micrometers, the distance being measured in a direction perpendicular to that of propa-gation of light in the waveguide layer.
The photonic integrated circuit according to claim 14, wherein at least one dimension of a cross section of the grounding hole in a plane parallel to the direction of propa-gation of light in the waveguide layer is at least 20 microm-eters.
A method of fabricating a photonic integrated circuit comprising: a plurality of conductive contacts connected to one another by a conductive layer; a waveguide comprising a first part of a waveguide layer, and at least one conductive contact of the plurality of conductive contacts; an optical element comprising a second part of the wave-guide layer, and a contact layer arranged for connection to a voltage source; an isolator between the contact layer and the at least one conductive contact; and an asymmetric Mach Zehnder interferometer connected to the waveguide.
The photonic integrated circuit according to claim 16, comprising a plurality of asymmetric Mach Zehnder interferometers connected to the waveguide. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
photonic integrated circuit with waveguide, optical element, isolator, and conductive contacts
asymmetric Mach Zehnder interferometer (AMZI)
No layer stack recorded.
Materials described outside the worked examples.
titanium
Ti
gold
Au
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 75–500 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 27
Related documents with shared materials, methods, properties, or citations.
platinum
Pt
| ≥ 10 µm |
| — |
Thickness | ≥ 20 µm | — |
Thickness | ≥ 50 µm | — |
Cited non-patent literature · 3
platinum
Pt
| ≥ 10 µm |
| — |
Thickness | ≥ 20 µm | — |
Thickness | ≥ 50 µm | — |
Cited non-patent literature · 3
platinum
Pt
| ≥ 10 µm |
| — |
Thickness | ≥ 20 µm | — |
Thickness | ≥ 50 µm | — |
Cited non-patent literature · 3
platinum
Pt
| ≥ 10 µm |
| — |
Thickness | ≥ 20 µm | — |
Thickness | ≥ 50 µm | — |
Cited non-patent literature · 3
