Patent
US 8,647,436Patent
Atlas literature
Patent
US 8,647,436Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 is a diagram of a carbon isotope junction formed in or between graphene 30 sheets;
FIG. 3 is a flow diagram for carbon ion beam growth of isotopically-entriched 4 graphene and isotope junctions;
FIG. 4 is a diagram for carbon ion beam growth of isotopically-enriched graphene;
FIG. 5 is a diagram of an embodiment of a carbon ion beam source;
FIG. 6 is a diagram of an embodiment of an electromagnetic filter for separating 5 the carbon ion beam into its constituent components and passing a desired ion …
FIG. 7 is a diagram of a planar isotope junction formed within a single graphene sheet; FIGs. 8a-8 b are diagrams for raster scanning the ion beam that is …
FIG. 9 is a diagram of a vertical isotope junction formed between multiple graphene sheets; FIGs. 1 O a- 1 O e are diagrams of an embodiment for implanting 12C …
FIG. 12 is an embodiment of a system for carbon ion beam growth ofisotopically- enriched graphene and carbon isotope junctions. DETAILED DESCR I PTION OF THE …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making isotopically enriched graphene, comprising the steps of: (a) providing a catalyst substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to graphene; 5 (b) providing a carbon ion beam source including a focusing aperture for generating a focused ion beam that is directed towards the substrate, said beam comprising a plurality of ion species, each species comprising a different electrically charged carbon isotope or a different electrically charged molecular ion containing one or more carbon isotopes; 10 (c) accelerating the ion beam with an electric field towards the substrate; (d) using magnetic or electric field generating devices to separate the ion beam into a plurality of component ion beams according to the charge-to-mass ratio of the different ion species; (e) passing a selected component ion beam substantially comprised of a single 15 ion species containing a single desired carbon isotope or molecular ion containing a single desired carbon isotope toward the substrate and filtering out the remaining component ion beams containing undesired ion species; and (f) directing the selected component ion beam onto the substrate to epitaxially grow isotopically-enriched graphene on the surface of the single crystal region of the 20 substrate from the desired carbon isotope.
The method of claim 1, wherein the single desired carbon isotope is 12C, said isotopically-enriched graphene comprising at least 99.9 % 12C.
The method of claim 1, wherein the single desired carbon isotope is 13C, said isotopically-enriched graphene comprising at least 95 % 13C.
19. The method of claim 16, wherein said first and second desired carbon isotopes are 12C and 13C, said first and second regions each comprise at least 99% 12C and 13C, respectively.
Layer stacks claimed or described, ordered top of device to substrate.
isotope junction
Materials described outside the worked examples.
isotopically-enriched graphene
catalyst substrate with hexagonal single crystal region
12C-enriched graphene
Additional fabrication and treatment steps described in the patent.
Patent
Atlas literature
Patent
US 8,647,436Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 is a diagram of a carbon isotope junction formed in or between graphene 30 sheets;
FIG. 3 is a flow diagram for carbon ion beam growth of isotopically-entriched 4 graphene and isotope junctions;
FIG. 4 is a diagram for carbon ion beam growth of isotopically-enriched graphene;
FIG. 5 is a diagram of an embodiment of a carbon ion beam source;
FIG. 6 is a diagram of an embodiment of an electromagnetic filter for separating 5 the carbon ion beam into its constituent components and passing a desired ion …
FIG. 7 is a diagram of a planar isotope junction formed within a single graphene sheet; FIGs. 8a-8 b are diagrams for raster scanning the ion beam that is …
FIG. 9 is a diagram of a vertical isotope junction formed between multiple graphene sheets; FIGs. 1 O a- 1 O e are diagrams of an embodiment for implanting 12C …
FIG. 12 is an embodiment of a system for carbon ion beam growth ofisotopically- enriched graphene and carbon isotope junctions. DETAILED DESCR I PTION OF THE …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making isotopically enriched graphene, comprising the steps of: (a) providing a catalyst substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to graphene; 5 (b) providing a carbon ion beam source including a focusing aperture for generating a focused ion beam that is directed towards the substrate, said beam comprising a plurality of ion species, each species comprising a different electrically charged carbon isotope or a different electrically charged molecular ion containing one or more carbon isotopes; 10 (c) accelerating the ion beam with an electric field towards the substrate; (d) using magnetic or electric field generating devices to separate the ion beam into a plurality of component ion beams according to the charge-to-mass ratio of the different ion species; (e) passing a selected component ion beam substantially comprised of a single 15 ion species containing a single desired carbon isotope or molecular ion containing a single desired carbon isotope toward the substrate and filtering out the remaining component ion beams containing undesired ion species; and (f) directing the selected component ion beam onto the substrate to epitaxially grow isotopically-enriched graphene on the surface of the single crystal region of the 20 substrate from the desired carbon isotope.
The method of claim 1, wherein the single desired carbon isotope is 12C, said isotopically-enriched graphene comprising at least 99.9 % 12C.
The method of claim 1, wherein the single desired carbon isotope is 13C, said isotopically-enriched graphene comprising at least 95 % 13C.
19. The method of claim 16, wherein said first and second desired carbon isotopes are 12C and 13C, said first and second regions each comprise at least 99% 12C and 13C, respectively.
Layer stacks claimed or described, ordered top of device to substrate.
isotope junction
Materials described outside the worked examples.
isotopically-enriched graphene
catalyst substrate with hexagonal single crystal region
12C-enriched graphene
Additional fabrication and treatment steps described in the patent.
Patent
Atlas literature
Patent
US 8,647,436Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 is a diagram of a carbon isotope junction formed in or between graphene 30 sheets;
FIG. 3 is a flow diagram for carbon ion beam growth of isotopically-entriched 4 graphene and isotope junctions;
FIG. 4 is a diagram for carbon ion beam growth of isotopically-enriched graphene;
FIG. 5 is a diagram of an embodiment of a carbon ion beam source;
FIG. 6 is a diagram of an embodiment of an electromagnetic filter for separating 5 the carbon ion beam into its constituent components and passing a desired ion …
FIG. 7 is a diagram of a planar isotope junction formed within a single graphene sheet; FIGs. 8a-8 b are diagrams for raster scanning the ion beam that is …
FIG. 9 is a diagram of a vertical isotope junction formed between multiple graphene sheets; FIGs. 1 O a- 1 O e are diagrams of an embodiment for implanting 12C …
FIG. 12 is an embodiment of a system for carbon ion beam growth ofisotopically- enriched graphene and carbon isotope junctions. DETAILED DESCR I PTION OF THE …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making isotopically enriched graphene, comprising the steps of: (a) providing a catalyst substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to graphene; 5 (b) providing a carbon ion beam source including a focusing aperture for generating a focused ion beam that is directed towards the substrate, said beam comprising a plurality of ion species, each species comprising a different electrically charged carbon isotope or a different electrically charged molecular ion containing one or more carbon isotopes; 10 (c) accelerating the ion beam with an electric field towards the substrate; (d) using magnetic or electric field generating devices to separate the ion beam into a plurality of component ion beams according to the charge-to-mass ratio of the different ion species; (e) passing a selected component ion beam substantially comprised of a single 15 ion species containing a single desired carbon isotope or molecular ion containing a single desired carbon isotope toward the substrate and filtering out the remaining component ion beams containing undesired ion species; and (f) directing the selected component ion beam onto the substrate to epitaxially grow isotopically-enriched graphene on the surface of the single crystal region of the 20 substrate from the desired carbon isotope.
The method of claim 1, wherein the single desired carbon isotope is 12C, said isotopically-enriched graphene comprising at least 99.9 % 12C.
The method of claim 1, wherein the single desired carbon isotope is 13C, said isotopically-enriched graphene comprising at least 95 % 13C.
19. The method of claim 16, wherein said first and second desired carbon isotopes are 12C and 13C, said first and second regions each comprise at least 99% 12C and 13C, respectively.
Layer stacks claimed or described, ordered top of device to substrate.
isotope junction
Materials described outside the worked examples.
isotopically-enriched graphene
catalyst substrate with hexagonal single crystal region
12C-enriched graphene
Additional fabrication and treatment steps described in the patent.
Patent
Atlas literature
Patent
US 8,647,436Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 is a diagram of a carbon isotope junction formed in or between graphene 30 sheets;
FIG. 3 is a flow diagram for carbon ion beam growth of isotopically-entriched 4 graphene and isotope junctions;
FIG. 4 is a diagram for carbon ion beam growth of isotopically-enriched graphene;
FIG. 5 is a diagram of an embodiment of a carbon ion beam source;
FIG. 6 is a diagram of an embodiment of an electromagnetic filter for separating 5 the carbon ion beam into its constituent components and passing a desired ion …
FIG. 7 is a diagram of a planar isotope junction formed within a single graphene sheet; FIGs. 8a-8 b are diagrams for raster scanning the ion beam that is …
FIG. 9 is a diagram of a vertical isotope junction formed between multiple graphene sheets; FIGs. 1 O a- 1 O e are diagrams of an embodiment for implanting 12C …
FIG. 12 is an embodiment of a system for carbon ion beam growth ofisotopically- enriched graphene and carbon isotope junctions. DETAILED DESCR I PTION OF THE …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making isotopically enriched graphene, comprising the steps of: (a) providing a catalyst substrate including a single crystal region on a surface of the substrate, said region having a hexagonal crystal lattice substantially lattice-matched to graphene; 5 (b) providing a carbon ion beam source including a focusing aperture for generating a focused ion beam that is directed towards the substrate, said beam comprising a plurality of ion species, each species comprising a different electrically charged carbon isotope or a different electrically charged molecular ion containing one or more carbon isotopes; 10 (c) accelerating the ion beam with an electric field towards the substrate; (d) using magnetic or electric field generating devices to separate the ion beam into a plurality of component ion beams according to the charge-to-mass ratio of the different ion species; (e) passing a selected component ion beam substantially comprised of a single 15 ion species containing a single desired carbon isotope or molecular ion containing a single desired carbon isotope toward the substrate and filtering out the remaining component ion beams containing undesired ion species; and (f) directing the selected component ion beam onto the substrate to epitaxially grow isotopically-enriched graphene on the surface of the single crystal region of the 20 substrate from the desired carbon isotope.
The method of claim 1, wherein the single desired carbon isotope is 12C, said isotopically-enriched graphene comprising at least 99.9 % 12C.
The method of claim 1, wherein the single desired carbon isotope is 13C, said isotopically-enriched graphene comprising at least 95 % 13C.
19. The method of claim 16, wherein said first and second desired carbon isotopes are 12C and 13C, said first and second regions each comprise at least 99% 12C and 13C, respectively.
Layer stacks claimed or described, ordered top of device to substrate.
isotope junction
Materials described outside the worked examples.
isotopically-enriched graphene
catalyst substrate with hexagonal single crystal region
12C-enriched graphene
Additional fabrication and treatment steps described in the patent.
13C-enriched graphene
isotope junction graphene
13C-enriched graphene
isotope junction graphene
13C-enriched graphene
isotope junction graphene
13C-enriched graphene
isotope junction graphene
