Patent
US 10,790,811CASCADED BOOTSTRAPPING GaN POWER SWITCH AND DRIVER
Edward Lee
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,790,811Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-B illustrate schematics of conventional charge pump gate drivers for a high side power switch. [0020]
FIGS. 2A-B illustrate schematics of conventional bootstrapping gate drivers for a high side power switch. [0021]
FIG. 3 illustrates a cascaded bootstrapping gate driver for a high side power switch according to a first embodiment of the present invention. [0022]
FIG. 4 illustrates a cascaded bootstrapping gate driver for a high side power switch according to the first embodiment of the present invention, including N …
FIG. 5 illustrates a cascaded bootstrapping gate driver for a high side power switch according to a second embodiment of the present invention, in which a …
FIG. 6 illustrates a cascaded bootstrapping gate driver for a high side power switch according to the second embodiment of the present invention, including N …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A cascaded bootstrapping gate driver for a high side power transistor having a drain terminal connected to a supply voltage, a source terminal connected to an output, and a gate terminal, the cascaded bootstrapping gate driver comprising: an initial bootstrapping stage comprising a circuit including a bootstrap capacitor, and a resistor to decrease static current consumption; and at least one secondary bootstrapping stage comprising the circuit of the initial bootstrapping stage, but including a transistor in place of the resistor of the initial bootstrapping stage; wherein the initial bootstrapping stage provides a first driving voltage to the secondary bootstrapping stage, and the secondary bootstrapping stage provides a second driving voltage to the gate terminal of the high side power transistor, wherein the second driving voltage is larger than the first driving voltage. Currently amended
The cascaded bootstrapping gate driver of claim 1, wherein the initial bootstrapping stage comprises: a first gallium nitride (GaN) field effect transistor (F ET) having a gate terminal connected to an input node, a source terminal connected to ground, and a drain terminal connected to a first node; a resistor having a first terminal connected to the first node and a second terminal connected to a second node; a second GaN FET having a source terminal connected to the second node, and a gate terminal and a drain terminal connected together to the supply voltage; and a first capacitor having a first terminal connected to the second node and a second terminal connected to the gate terminal of the high side power transistor, wherein the first capacitor comprises the bootstrap capacitor of the initial bootstrapping stage; and wherein the secondary bootstrapping stage comprises: a third GaN F ET having a gate terminal connected to the input node, a source terminal connected to ground, and a drain terminal connected to the gate terminal of the high side power transistor; a fourth GaN FET having a gate terminal connected to the first node, a source terminal connected to the gate terminal of the high side power transistor, and a drain terminal connected to a third node, wherein the fourth GaN FET comprises the transistor in place of the resistor of the initial bootstrapping stage; a fifth GaN FET having a source terminal connected to the third node, and a gate terminal and a drain terminal connected together to the supply voltage; and a second capacitor having a first terminal connected to the third node and a second terminal connected to the output, wherein the second capacitor comprises the bootstrap capacitor of the secondary bootstrapping stage. Currently amended
The cascaded bootstrapping gate driver of claim 1, further comprising [[an]] at least one additional secondary bootstrapping stage connected between the secondary bootstrapping stage and the high side power transistor, wherein the additional secondary bootstrapping stage comprises the circuit of the secondary bootstrapping stage, wherein the secondary bootstrapping stage provides the second driving voltage to the additional secondary bootstrapping stage and the additional secondary bootstrapping stage provides an additional second driving voltage to the gate terminal of the high side power transistor, wherein the additional second driving voltage is larger than the second driving voltage. Currently amended
The cascaded bootstrapping gate driver of claim 1, wherein the initial bootstrapping stage comprises: a first gallium nitride (G aN) field effect transistor (FET) having a gate terminal connected to an input node, a source terminal connected to ground, and a drain terminal connected to a first node; a resistor having a first terminal connected to the first node and a second terminal connected to a second node; a second GaN F ET having a source terminal connected to the second node, and a gate terminal and a drain terminal connected together at the supply voltage; and a first capacitor having a first terminal connected to the second node and a second terminal connected to the output, wherein the first capacitor comprises the bootstrap capacitor of the initial bootstrapping stage; and wherein the secondary bootstrapping stage comprises: a third GaN FET having a gate terminal connected to the input node, a source terminal connected to ground, and a drain terminal connected to the gate terminal of the high side power transistor; a fourth GaN FET having a gate terminal connected to the first node, a source terminal connected to the gate terminal of the high side power transistor, and a drain terminal connected to a third node, wherein the fourth GaN FET comprises the transistor in place of the resistor of the initial bootstrapping stage; a fifth GaN FET having a source terminal connected to the third node, and a gate terminal and a drain terminal connected together to the supply voltage; and a second capacitor having a first terminal connected to the third node and a second terminal connected to the output, wherein the second capacitor comprises the bootstrap capacitor of the secondary bootstrapping stage. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
cascaded bootstrapping gate driver with GaN FETs
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | ≤ 2 V | — |
Patent
Atlas literature
Patent
US 10,790,811Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-B illustrate schematics of conventional charge pump gate drivers for a high side power switch. [0020]
FIGS. 2A-B illustrate schematics of conventional bootstrapping gate drivers for a high side power switch. [0021]
FIG. 3 illustrates a cascaded bootstrapping gate driver for a high side power switch according to a first embodiment of the present invention. [0022]
FIG. 4 illustrates a cascaded bootstrapping gate driver for a high side power switch according to the first embodiment of the present invention, including N …
FIG. 5 illustrates a cascaded bootstrapping gate driver for a high side power switch according to a second embodiment of the present invention, in which a …
FIG. 6 illustrates a cascaded bootstrapping gate driver for a high side power switch according to the second embodiment of the present invention, including N …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A cascaded bootstrapping gate driver for a high side power transistor having a drain terminal connected to a supply voltage, a source terminal connected to an output, and a gate terminal, the cascaded bootstrapping gate driver comprising: an initial bootstrapping stage comprising a circuit including a bootstrap capacitor, and a resistor to decrease static current consumption; and at least one secondary bootstrapping stage comprising the circuit of the initial bootstrapping stage, but including a transistor in place of the resistor of the initial bootstrapping stage; wherein the initial bootstrapping stage provides a first driving voltage to the secondary bootstrapping stage, and the secondary bootstrapping stage provides a second driving voltage to the gate terminal of the high side power transistor, wherein the second driving voltage is larger than the first driving voltage. Currently amended
The cascaded bootstrapping gate driver of claim 1, wherein the initial bootstrapping stage comprises: a first gallium nitride (GaN) field effect transistor (F ET) having a gate terminal connected to an input node, a source terminal connected to ground, and a drain terminal connected to a first node; a resistor having a first terminal connected to the first node and a second terminal connected to a second node; a second GaN FET having a source terminal connected to the second node, and a gate terminal and a drain terminal connected together to the supply voltage; and a first capacitor having a first terminal connected to the second node and a second terminal connected to the gate terminal of the high side power transistor, wherein the first capacitor comprises the bootstrap capacitor of the initial bootstrapping stage; and wherein the secondary bootstrapping stage comprises: a third GaN F ET having a gate terminal connected to the input node, a source terminal connected to ground, and a drain terminal connected to the gate terminal of the high side power transistor; a fourth GaN FET having a gate terminal connected to the first node, a source terminal connected to the gate terminal of the high side power transistor, and a drain terminal connected to a third node, wherein the fourth GaN FET comprises the transistor in place of the resistor of the initial bootstrapping stage; a fifth GaN FET having a source terminal connected to the third node, and a gate terminal and a drain terminal connected together to the supply voltage; and a second capacitor having a first terminal connected to the third node and a second terminal connected to the output, wherein the second capacitor comprises the bootstrap capacitor of the secondary bootstrapping stage. Currently amended
The cascaded bootstrapping gate driver of claim 1, further comprising [[an]] at least one additional secondary bootstrapping stage connected between the secondary bootstrapping stage and the high side power transistor, wherein the additional secondary bootstrapping stage comprises the circuit of the secondary bootstrapping stage, wherein the secondary bootstrapping stage provides the second driving voltage to the additional secondary bootstrapping stage and the additional secondary bootstrapping stage provides an additional second driving voltage to the gate terminal of the high side power transistor, wherein the additional second driving voltage is larger than the second driving voltage. Currently amended
The cascaded bootstrapping gate driver of claim 1, wherein the initial bootstrapping stage comprises: a first gallium nitride (G aN) field effect transistor (FET) having a gate terminal connected to an input node, a source terminal connected to ground, and a drain terminal connected to a first node; a resistor having a first terminal connected to the first node and a second terminal connected to a second node; a second GaN F ET having a source terminal connected to the second node, and a gate terminal and a drain terminal connected together at the supply voltage; and a first capacitor having a first terminal connected to the second node and a second terminal connected to the output, wherein the first capacitor comprises the bootstrap capacitor of the initial bootstrapping stage; and wherein the secondary bootstrapping stage comprises: a third GaN FET having a gate terminal connected to the input node, a source terminal connected to ground, and a drain terminal connected to the gate terminal of the high side power transistor; a fourth GaN FET having a gate terminal connected to the first node, a source terminal connected to the gate terminal of the high side power transistor, and a drain terminal connected to a third node, wherein the fourth GaN FET comprises the transistor in place of the resistor of the initial bootstrapping stage; a fifth GaN FET having a source terminal connected to the third node, and a gate terminal and a drain terminal connected together to the supply voltage; and a second capacitor having a first terminal connected to the third node and a second terminal connected to the output, wherein the second capacitor comprises the bootstrap capacitor of the secondary bootstrapping stage. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
cascaded bootstrapping gate driver with GaN FETs
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | ≤ 2 V | — |
Patent
Atlas literature
Patent
US 10,790,811Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-B illustrate schematics of conventional charge pump gate drivers for a high side power switch. [0020]
FIGS. 2A-B illustrate schematics of conventional bootstrapping gate drivers for a high side power switch. [0021]
FIG. 3 illustrates a cascaded bootstrapping gate driver for a high side power switch according to a first embodiment of the present invention. [0022]
FIG. 4 illustrates a cascaded bootstrapping gate driver for a high side power switch according to the first embodiment of the present invention, including N …
FIG. 5 illustrates a cascaded bootstrapping gate driver for a high side power switch according to a second embodiment of the present invention, in which a …
FIG. 6 illustrates a cascaded bootstrapping gate driver for a high side power switch according to the second embodiment of the present invention, including N …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A cascaded bootstrapping gate driver for a high side power transistor having a drain terminal connected to a supply voltage, a source terminal connected to an output, and a gate terminal, the cascaded bootstrapping gate driver comprising: an initial bootstrapping stage comprising a circuit including a bootstrap capacitor, and a resistor to decrease static current consumption; and at least one secondary bootstrapping stage comprising the circuit of the initial bootstrapping stage, but including a transistor in place of the resistor of the initial bootstrapping stage; wherein the initial bootstrapping stage provides a first driving voltage to the secondary bootstrapping stage, and the secondary bootstrapping stage provides a second driving voltage to the gate terminal of the high side power transistor, wherein the second driving voltage is larger than the first driving voltage. Currently amended
The cascaded bootstrapping gate driver of claim 1, wherein the initial bootstrapping stage comprises: a first gallium nitride (GaN) field effect transistor (F ET) having a gate terminal connected to an input node, a source terminal connected to ground, and a drain terminal connected to a first node; a resistor having a first terminal connected to the first node and a second terminal connected to a second node; a second GaN FET having a source terminal connected to the second node, and a gate terminal and a drain terminal connected together to the supply voltage; and a first capacitor having a first terminal connected to the second node and a second terminal connected to the gate terminal of the high side power transistor, wherein the first capacitor comprises the bootstrap capacitor of the initial bootstrapping stage; and wherein the secondary bootstrapping stage comprises: a third GaN F ET having a gate terminal connected to the input node, a source terminal connected to ground, and a drain terminal connected to the gate terminal of the high side power transistor; a fourth GaN FET having a gate terminal connected to the first node, a source terminal connected to the gate terminal of the high side power transistor, and a drain terminal connected to a third node, wherein the fourth GaN FET comprises the transistor in place of the resistor of the initial bootstrapping stage; a fifth GaN FET having a source terminal connected to the third node, and a gate terminal and a drain terminal connected together to the supply voltage; and a second capacitor having a first terminal connected to the third node and a second terminal connected to the output, wherein the second capacitor comprises the bootstrap capacitor of the secondary bootstrapping stage. Currently amended
The cascaded bootstrapping gate driver of claim 1, further comprising [[an]] at least one additional secondary bootstrapping stage connected between the secondary bootstrapping stage and the high side power transistor, wherein the additional secondary bootstrapping stage comprises the circuit of the secondary bootstrapping stage, wherein the secondary bootstrapping stage provides the second driving voltage to the additional secondary bootstrapping stage and the additional secondary bootstrapping stage provides an additional second driving voltage to the gate terminal of the high side power transistor, wherein the additional second driving voltage is larger than the second driving voltage. Currently amended
The cascaded bootstrapping gate driver of claim 1, wherein the initial bootstrapping stage comprises: a first gallium nitride (G aN) field effect transistor (FET) having a gate terminal connected to an input node, a source terminal connected to ground, and a drain terminal connected to a first node; a resistor having a first terminal connected to the first node and a second terminal connected to a second node; a second GaN F ET having a source terminal connected to the second node, and a gate terminal and a drain terminal connected together at the supply voltage; and a first capacitor having a first terminal connected to the second node and a second terminal connected to the output, wherein the first capacitor comprises the bootstrap capacitor of the initial bootstrapping stage; and wherein the secondary bootstrapping stage comprises: a third GaN FET having a gate terminal connected to the input node, a source terminal connected to ground, and a drain terminal connected to the gate terminal of the high side power transistor; a fourth GaN FET having a gate terminal connected to the first node, a source terminal connected to the gate terminal of the high side power transistor, and a drain terminal connected to a third node, wherein the fourth GaN FET comprises the transistor in place of the resistor of the initial bootstrapping stage; a fifth GaN FET having a source terminal connected to the third node, and a gate terminal and a drain terminal connected together to the supply voltage; and a second capacitor having a first terminal connected to the third node and a second terminal connected to the output, wherein the second capacitor comprises the bootstrap capacitor of the secondary bootstrapping stage. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
cascaded bootstrapping gate driver with GaN FETs
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | ≤ 2 V | — |
Patent
Atlas literature
Patent
US 10,790,811Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A-B illustrate schematics of conventional charge pump gate drivers for a high side power switch. [0020]
FIGS. 2A-B illustrate schematics of conventional bootstrapping gate drivers for a high side power switch. [0021]
FIG. 3 illustrates a cascaded bootstrapping gate driver for a high side power switch according to a first embodiment of the present invention. [0022]
FIG. 4 illustrates a cascaded bootstrapping gate driver for a high side power switch according to the first embodiment of the present invention, including N …
FIG. 5 illustrates a cascaded bootstrapping gate driver for a high side power switch according to a second embodiment of the present invention, in which a …
FIG. 6 illustrates a cascaded bootstrapping gate driver for a high side power switch according to the second embodiment of the present invention, including N …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A cascaded bootstrapping gate driver for a high side power transistor having a drain terminal connected to a supply voltage, a source terminal connected to an output, and a gate terminal, the cascaded bootstrapping gate driver comprising: an initial bootstrapping stage comprising a circuit including a bootstrap capacitor, and a resistor to decrease static current consumption; and at least one secondary bootstrapping stage comprising the circuit of the initial bootstrapping stage, but including a transistor in place of the resistor of the initial bootstrapping stage; wherein the initial bootstrapping stage provides a first driving voltage to the secondary bootstrapping stage, and the secondary bootstrapping stage provides a second driving voltage to the gate terminal of the high side power transistor, wherein the second driving voltage is larger than the first driving voltage. Currently amended
The cascaded bootstrapping gate driver of claim 1, wherein the initial bootstrapping stage comprises: a first gallium nitride (GaN) field effect transistor (F ET) having a gate terminal connected to an input node, a source terminal connected to ground, and a drain terminal connected to a first node; a resistor having a first terminal connected to the first node and a second terminal connected to a second node; a second GaN FET having a source terminal connected to the second node, and a gate terminal and a drain terminal connected together to the supply voltage; and a first capacitor having a first terminal connected to the second node and a second terminal connected to the gate terminal of the high side power transistor, wherein the first capacitor comprises the bootstrap capacitor of the initial bootstrapping stage; and wherein the secondary bootstrapping stage comprises: a third GaN F ET having a gate terminal connected to the input node, a source terminal connected to ground, and a drain terminal connected to the gate terminal of the high side power transistor; a fourth GaN FET having a gate terminal connected to the first node, a source terminal connected to the gate terminal of the high side power transistor, and a drain terminal connected to a third node, wherein the fourth GaN FET comprises the transistor in place of the resistor of the initial bootstrapping stage; a fifth GaN FET having a source terminal connected to the third node, and a gate terminal and a drain terminal connected together to the supply voltage; and a second capacitor having a first terminal connected to the third node and a second terminal connected to the output, wherein the second capacitor comprises the bootstrap capacitor of the secondary bootstrapping stage. Currently amended
The cascaded bootstrapping gate driver of claim 1, further comprising [[an]] at least one additional secondary bootstrapping stage connected between the secondary bootstrapping stage and the high side power transistor, wherein the additional secondary bootstrapping stage comprises the circuit of the secondary bootstrapping stage, wherein the secondary bootstrapping stage provides the second driving voltage to the additional secondary bootstrapping stage and the additional secondary bootstrapping stage provides an additional second driving voltage to the gate terminal of the high side power transistor, wherein the additional second driving voltage is larger than the second driving voltage. Currently amended
The cascaded bootstrapping gate driver of claim 1, wherein the initial bootstrapping stage comprises: a first gallium nitride (G aN) field effect transistor (FET) having a gate terminal connected to an input node, a source terminal connected to ground, and a drain terminal connected to a first node; a resistor having a first terminal connected to the first node and a second terminal connected to a second node; a second GaN F ET having a source terminal connected to the second node, and a gate terminal and a drain terminal connected together at the supply voltage; and a first capacitor having a first terminal connected to the second node and a second terminal connected to the output, wherein the first capacitor comprises the bootstrap capacitor of the initial bootstrapping stage; and wherein the secondary bootstrapping stage comprises: a third GaN FET having a gate terminal connected to the input node, a source terminal connected to ground, and a drain terminal connected to the gate terminal of the high side power transistor; a fourth GaN FET having a gate terminal connected to the first node, a source terminal connected to the gate terminal of the high side power transistor, and a drain terminal connected to a third node, wherein the fourth GaN FET comprises the transistor in place of the resistor of the initial bootstrapping stage; a fifth GaN FET having a source terminal connected to the third node, and a gate terminal and a drain terminal connected together to the supply voltage; and a second capacitor having a first terminal connected to the third node and a second terminal connected to the output, wherein the second capacitor comprises the bootstrap capacitor of the secondary bootstrapping stage. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
cascaded bootstrapping gate driver with GaN FETs
Materials described outside the worked examples.
gallium nitride (GaN)
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | ≤ 2 V | — |