Patent
US 9,263,196CHEMICAL VAPOR DEPOSITION GRAPHENE FOAM ELECTRODES FOR PSEUDO-CAPACITORS
Thomas A. Yager
Empire Technology Development, LLC·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,263,196Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a conceptual drawing showing chemical vapor deposition of graphene in an open-cell metal foam substrate to form an example open-cell foam …
FIG. 2 is a conceptual drawing showing dissolution of an open-cell metal foam substrate to leave an example open-cell graphene structure; WO 2012/144993 …
FIG. 3 is a conceptual drawing showing electroless deposition of a thin pseudo-capacitive material layer in an open-cell graphene foam to form an example …
FIG. 4 is a conceptual drawing showing a cross section of an example capacitor using two electrodes, wherein each electrode includes an example open-cell foam …
FIG. 5 is a flow diagram showing steps that may be used in making an example open-cell graphene foam as disclosed herein;
FIG. 6 is a block diagram of an automated machine that may be used for making an example open-cell graphene foam using the process steps outlined in
FIG. 7 illustrates a general purpose computing device that may be used to control the automated machine of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-based electronic apparatus, comprising: a first electrode that includes: a metal foam substrate; and a three-dimensional open-cell graphene structure, formed by chemical vapor deposition on the metal foam substrate, wherein the metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum, and wherein the chemical vapor deposition uses a gas mixture of C H 4:H2: Ar having a molar ratio of CH 4: H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH 4:H 2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture; and a layer of pseudo-capacitive material in contact with the three-dimensional open-cell graphene structure, wherein a surface area of the three-dimensional open-cell graphene structure is greater than a surface area of the metal foam substrate.
The graphene-based electronic apparatus of claim 1, wherein the layer of the pseudo-capacitive material includes one or more of RuO2, Fe₃ 0 4 and Mn O2.
The graphene-based electronic apparatus of claim 1, wherein the three-dimensional open-cell graphene structure is characterized by a void volume of between about 75% and about 95%.
The graphene-based electronic apparatus of claim 1, wherein the three-dimensional open-cell graphene structure is characterized by the surface area of at least about 2500 meters per gram.
The graphene-based electronic apparatus of claim 1, wherein the three-dimensional open-cell graphene structure includes cell walls that average between one and ten layers of graphene.
The graphene-based electronic apparatus of claim 1, further comprising: a separator having a first side in contact with the first electrode; and a second electrode in contact with a second side of the separator, wherein the graphene- based electronic apparatus is configured to operate as a capacitor device. 16 S/N 13/519,569
- 3. canceled
- 8. canceled
A method to make a graphene-based electronic apparatus, comprising: forming a first electrode by depositing a three-dimensional open-cell graphene structure via chemical vapor deposition on an open-cell metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of C H 4:H 2:Ar having a molar ratio of CH 4:H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH4: H 2:Ar includes Ar in about 0% to about 70% of a total volume of the gas mixture, wherein the first electrode includes the open-cell metal foam substrate, and wherein the open-cell metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum; and depositing a layer of pseudo-capacitive material in the th r ee-dimensional open-cell graphene structure of the first electrode, wherein a surface area of the th r ee-dimensional open- cell graphene structure is greater than a surface area of the metal foam substrate.
The method of claim 13, wherein the layer of pseudo-capacative pseudo-capacitive material includes one or more of R uG 2, Fe 3 0 4 and Mn O 2.
The method of claim 13, wherein the layer of pseudo-capacitive material is deposited by an electroless process.
The method of claim 13, wherein the three-dimensional open-cell graphene structure is characterized by a void volume of between about 75% and about 95%.
The method of claim 13, wherein the three-dimensional open-cell graphene structure is characterized by the surface area of at least about 2500 meters per gram.
The method of claim 13, wherein the three-dimensional open-cell graphene structure includes cell walls that average between one and ten layers of graphene.
The method of claim 13, further comprising: forming the first electrode by contacting the three-dimensional open-cell graphene structure to a first electrical lead; contacting the first electrode to a first side of a separator; and contacting a second electrode to a second side of the separator, wherein the graphene- based electronic apparatus is configured to operate as a capacitor device. 18 S/N 13/519,569
- 17. canceled
A system to manufacture a graphene-based capacitor device, comprising: a chemical vapor depositor; an electroless depositor; a capacitor forming machine; and a controller coupled to the chemical vapor depositor, the electroless depositor, and the capacitor forming machine, wherein the controller is configured to: deposit graphene via chemical vapor deposition on an open-cell metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of C H 4:H2: Ar having a molar ratio of C H 4:1H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH 4:H 2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture, and wherein the open-cell metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum; and deposit a first layer of pseudo-capacitive material in a three-dimensional open-cell graphene structure to form a first electrode, wherein the first electrode includes the open- 19 S/N 13/519,569 cell metal foam substrate, and wherein a surface area of the three-dimensional open-cell graphene structure is greater than a surface area of the metal foam substrate.
The system of claim 25, wherein the controller is further configured to: deposit graphene via chemical vapor deposition on the open-cell metal foam substrate; deposit a second layer of the pseudo-capacitive material in another three-dimensional open-cell graphene structure to form a second electrode; contact the first electrode to a first side of a separator; and contact the second electrode with a second side of the separator.
A capacitor, comprising: a first electrode including a metal foam substrate contacts a first surface of a separator and includes a three-dimensional open-cell graphene structure, formed by chemical vapor deposition on the metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of C H 4:H2:Ar having a molar ratio of C H 4:H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH 4: H 2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture, 20 S/N 13/519,569 wherein the metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum, and wherein a surface area of the three-dimensional open-cell graphene structure is greater than a surface area of the metal foam substrate; a first layer of pseudo-capacitive material in contact with the three-dimensional open-cell graphene structure; a second electrode that contacts a second surface of the separator and includes another three-dimensional open-cell graphene structure, formed by chemical vapor deposition on another metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of CH 4:H 2: Ar having a molar ratio of C H 4:1H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH4:H2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture; and a second layer of the pseudo-capacitive material in contact with the other open-cell graphene structure, wherein the surface area of the other three-dimensional open-cell graphene structure is greater than the surface area of the other metal foam substrate.
The capacitor of claim 28, wherein the first layer of the pseudo- capacitive material includes one or more of Ru O 2, Fe₃ 0 4 and Mn O2.
The capacitor of claim 28, wherein the three-dimensional open- cell graphene structure is characterized by a void volume of between about 75 % and about 95 %. 21 S/N 13/519,569
The capacitor of claim 28, wherein the three-dimensional open- cell graphene structure is characterized by the surface area of at least about 2500 meters per gram.
The capacitor of claim 28, characterized by a specific capacitance of at least about 400 Farads per gram. 22
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based electrode (first electrode)
graphene-based capacitor (EDLC or hybrid)
Materials described outside the worked examples.
three-dimensional open-cell graphene structure
metal foam substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific capacitance of capacitor device | ≥ 400 F/g | — |
BET surface area of three-dimensional open-cell graphene structure | ≥ 2500 m2/g |
Patent
Atlas literature
Patent
US 9,263,196Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a conceptual drawing showing chemical vapor deposition of graphene in an open-cell metal foam substrate to form an example open-cell foam …
FIG. 2 is a conceptual drawing showing dissolution of an open-cell metal foam substrate to leave an example open-cell graphene structure; WO 2012/144993 …
FIG. 3 is a conceptual drawing showing electroless deposition of a thin pseudo-capacitive material layer in an open-cell graphene foam to form an example …
FIG. 4 is a conceptual drawing showing a cross section of an example capacitor using two electrodes, wherein each electrode includes an example open-cell foam …
FIG. 5 is a flow diagram showing steps that may be used in making an example open-cell graphene foam as disclosed herein;
FIG. 6 is a block diagram of an automated machine that may be used for making an example open-cell graphene foam using the process steps outlined in
FIG. 7 illustrates a general purpose computing device that may be used to control the automated machine of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-based electronic apparatus, comprising: a first electrode that includes: a metal foam substrate; and a three-dimensional open-cell graphene structure, formed by chemical vapor deposition on the metal foam substrate, wherein the metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum, and wherein the chemical vapor deposition uses a gas mixture of C H 4:H2: Ar having a molar ratio of CH 4: H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH 4:H 2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture; and a layer of pseudo-capacitive material in contact with the three-dimensional open-cell graphene structure, wherein a surface area of the three-dimensional open-cell graphene structure is greater than a surface area of the metal foam substrate.
The graphene-based electronic apparatus of claim 1, wherein the layer of the pseudo-capacitive material includes one or more of RuO2, Fe₃ 0 4 and Mn O2.
The graphene-based electronic apparatus of claim 1, wherein the three-dimensional open-cell graphene structure is characterized by a void volume of between about 75% and about 95%.
The graphene-based electronic apparatus of claim 1, wherein the three-dimensional open-cell graphene structure is characterized by the surface area of at least about 2500 meters per gram.
The graphene-based electronic apparatus of claim 1, wherein the three-dimensional open-cell graphene structure includes cell walls that average between one and ten layers of graphene.
The graphene-based electronic apparatus of claim 1, further comprising: a separator having a first side in contact with the first electrode; and a second electrode in contact with a second side of the separator, wherein the graphene- based electronic apparatus is configured to operate as a capacitor device. 16 S/N 13/519,569
- 3. canceled
- 8. canceled
A method to make a graphene-based electronic apparatus, comprising: forming a first electrode by depositing a three-dimensional open-cell graphene structure via chemical vapor deposition on an open-cell metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of C H 4:H 2:Ar having a molar ratio of CH 4:H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH4: H 2:Ar includes Ar in about 0% to about 70% of a total volume of the gas mixture, wherein the first electrode includes the open-cell metal foam substrate, and wherein the open-cell metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum; and depositing a layer of pseudo-capacitive material in the th r ee-dimensional open-cell graphene structure of the first electrode, wherein a surface area of the th r ee-dimensional open- cell graphene structure is greater than a surface area of the metal foam substrate.
The method of claim 13, wherein the layer of pseudo-capacative pseudo-capacitive material includes one or more of R uG 2, Fe 3 0 4 and Mn O 2.
The method of claim 13, wherein the layer of pseudo-capacitive material is deposited by an electroless process.
The method of claim 13, wherein the three-dimensional open-cell graphene structure is characterized by a void volume of between about 75% and about 95%.
The method of claim 13, wherein the three-dimensional open-cell graphene structure is characterized by the surface area of at least about 2500 meters per gram.
The method of claim 13, wherein the three-dimensional open-cell graphene structure includes cell walls that average between one and ten layers of graphene.
The method of claim 13, further comprising: forming the first electrode by contacting the three-dimensional open-cell graphene structure to a first electrical lead; contacting the first electrode to a first side of a separator; and contacting a second electrode to a second side of the separator, wherein the graphene- based electronic apparatus is configured to operate as a capacitor device. 18 S/N 13/519,569
- 17. canceled
A system to manufacture a graphene-based capacitor device, comprising: a chemical vapor depositor; an electroless depositor; a capacitor forming machine; and a controller coupled to the chemical vapor depositor, the electroless depositor, and the capacitor forming machine, wherein the controller is configured to: deposit graphene via chemical vapor deposition on an open-cell metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of C H 4:H2: Ar having a molar ratio of C H 4:1H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH 4:H 2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture, and wherein the open-cell metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum; and deposit a first layer of pseudo-capacitive material in a three-dimensional open-cell graphene structure to form a first electrode, wherein the first electrode includes the open- 19 S/N 13/519,569 cell metal foam substrate, and wherein a surface area of the three-dimensional open-cell graphene structure is greater than a surface area of the metal foam substrate.
The system of claim 25, wherein the controller is further configured to: deposit graphene via chemical vapor deposition on the open-cell metal foam substrate; deposit a second layer of the pseudo-capacitive material in another three-dimensional open-cell graphene structure to form a second electrode; contact the first electrode to a first side of a separator; and contact the second electrode with a second side of the separator.
A capacitor, comprising: a first electrode including a metal foam substrate contacts a first surface of a separator and includes a three-dimensional open-cell graphene structure, formed by chemical vapor deposition on the metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of C H 4:H2:Ar having a molar ratio of C H 4:H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH 4: H 2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture, 20 S/N 13/519,569 wherein the metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum, and wherein a surface area of the three-dimensional open-cell graphene structure is greater than a surface area of the metal foam substrate; a first layer of pseudo-capacitive material in contact with the three-dimensional open-cell graphene structure; a second electrode that contacts a second surface of the separator and includes another three-dimensional open-cell graphene structure, formed by chemical vapor deposition on another metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of CH 4:H 2: Ar having a molar ratio of C H 4:1H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH4:H2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture; and a second layer of the pseudo-capacitive material in contact with the other open-cell graphene structure, wherein the surface area of the other three-dimensional open-cell graphene structure is greater than the surface area of the other metal foam substrate.
The capacitor of claim 28, wherein the first layer of the pseudo- capacitive material includes one or more of Ru O 2, Fe₃ 0 4 and Mn O2.
The capacitor of claim 28, wherein the three-dimensional open- cell graphene structure is characterized by a void volume of between about 75 % and about 95 %. 21 S/N 13/519,569
The capacitor of claim 28, wherein the three-dimensional open- cell graphene structure is characterized by the surface area of at least about 2500 meters per gram.
The capacitor of claim 28, characterized by a specific capacitance of at least about 400 Farads per gram. 22
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based electrode (first electrode)
graphene-based capacitor (EDLC or hybrid)
Materials described outside the worked examples.
three-dimensional open-cell graphene structure
metal foam substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific capacitance of capacitor device | ≥ 400 F/g | — |
BET surface area of three-dimensional open-cell graphene structure | ≥ 2500 m2/g |
Patent
Atlas literature
Patent
US 9,263,196Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a conceptual drawing showing chemical vapor deposition of graphene in an open-cell metal foam substrate to form an example open-cell foam …
FIG. 2 is a conceptual drawing showing dissolution of an open-cell metal foam substrate to leave an example open-cell graphene structure; WO 2012/144993 …
FIG. 3 is a conceptual drawing showing electroless deposition of a thin pseudo-capacitive material layer in an open-cell graphene foam to form an example …
FIG. 4 is a conceptual drawing showing a cross section of an example capacitor using two electrodes, wherein each electrode includes an example open-cell foam …
FIG. 5 is a flow diagram showing steps that may be used in making an example open-cell graphene foam as disclosed herein;
FIG. 6 is a block diagram of an automated machine that may be used for making an example open-cell graphene foam using the process steps outlined in
FIG. 7 illustrates a general purpose computing device that may be used to control the automated machine of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-based electronic apparatus, comprising: a first electrode that includes: a metal foam substrate; and a three-dimensional open-cell graphene structure, formed by chemical vapor deposition on the metal foam substrate, wherein the metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum, and wherein the chemical vapor deposition uses a gas mixture of C H 4:H2: Ar having a molar ratio of CH 4: H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH 4:H 2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture; and a layer of pseudo-capacitive material in contact with the three-dimensional open-cell graphene structure, wherein a surface area of the three-dimensional open-cell graphene structure is greater than a surface area of the metal foam substrate.
The graphene-based electronic apparatus of claim 1, wherein the layer of the pseudo-capacitive material includes one or more of RuO2, Fe₃ 0 4 and Mn O2.
The graphene-based electronic apparatus of claim 1, wherein the three-dimensional open-cell graphene structure is characterized by a void volume of between about 75% and about 95%.
The graphene-based electronic apparatus of claim 1, wherein the three-dimensional open-cell graphene structure is characterized by the surface area of at least about 2500 meters per gram.
The graphene-based electronic apparatus of claim 1, wherein the three-dimensional open-cell graphene structure includes cell walls that average between one and ten layers of graphene.
The graphene-based electronic apparatus of claim 1, further comprising: a separator having a first side in contact with the first electrode; and a second electrode in contact with a second side of the separator, wherein the graphene- based electronic apparatus is configured to operate as a capacitor device. 16 S/N 13/519,569
- 3. canceled
- 8. canceled
A method to make a graphene-based electronic apparatus, comprising: forming a first electrode by depositing a three-dimensional open-cell graphene structure via chemical vapor deposition on an open-cell metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of C H 4:H 2:Ar having a molar ratio of CH 4:H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH4: H 2:Ar includes Ar in about 0% to about 70% of a total volume of the gas mixture, wherein the first electrode includes the open-cell metal foam substrate, and wherein the open-cell metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum; and depositing a layer of pseudo-capacitive material in the th r ee-dimensional open-cell graphene structure of the first electrode, wherein a surface area of the th r ee-dimensional open- cell graphene structure is greater than a surface area of the metal foam substrate.
The method of claim 13, wherein the layer of pseudo-capacative pseudo-capacitive material includes one or more of R uG 2, Fe 3 0 4 and Mn O 2.
The method of claim 13, wherein the layer of pseudo-capacitive material is deposited by an electroless process.
The method of claim 13, wherein the three-dimensional open-cell graphene structure is characterized by a void volume of between about 75% and about 95%.
The method of claim 13, wherein the three-dimensional open-cell graphene structure is characterized by the surface area of at least about 2500 meters per gram.
The method of claim 13, wherein the three-dimensional open-cell graphene structure includes cell walls that average between one and ten layers of graphene.
The method of claim 13, further comprising: forming the first electrode by contacting the three-dimensional open-cell graphene structure to a first electrical lead; contacting the first electrode to a first side of a separator; and contacting a second electrode to a second side of the separator, wherein the graphene- based electronic apparatus is configured to operate as a capacitor device. 18 S/N 13/519,569
- 17. canceled
A system to manufacture a graphene-based capacitor device, comprising: a chemical vapor depositor; an electroless depositor; a capacitor forming machine; and a controller coupled to the chemical vapor depositor, the electroless depositor, and the capacitor forming machine, wherein the controller is configured to: deposit graphene via chemical vapor deposition on an open-cell metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of C H 4:H2: Ar having a molar ratio of C H 4:1H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH 4:H 2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture, and wherein the open-cell metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum; and deposit a first layer of pseudo-capacitive material in a three-dimensional open-cell graphene structure to form a first electrode, wherein the first electrode includes the open- 19 S/N 13/519,569 cell metal foam substrate, and wherein a surface area of the three-dimensional open-cell graphene structure is greater than a surface area of the metal foam substrate.
The system of claim 25, wherein the controller is further configured to: deposit graphene via chemical vapor deposition on the open-cell metal foam substrate; deposit a second layer of the pseudo-capacitive material in another three-dimensional open-cell graphene structure to form a second electrode; contact the first electrode to a first side of a separator; and contact the second electrode with a second side of the separator.
A capacitor, comprising: a first electrode including a metal foam substrate contacts a first surface of a separator and includes a three-dimensional open-cell graphene structure, formed by chemical vapor deposition on the metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of C H 4:H2:Ar having a molar ratio of C H 4:H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH 4: H 2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture, 20 S/N 13/519,569 wherein the metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum, and wherein a surface area of the three-dimensional open-cell graphene structure is greater than a surface area of the metal foam substrate; a first layer of pseudo-capacitive material in contact with the three-dimensional open-cell graphene structure; a second electrode that contacts a second surface of the separator and includes another three-dimensional open-cell graphene structure, formed by chemical vapor deposition on another metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of CH 4:H 2: Ar having a molar ratio of C H 4:1H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH4:H2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture; and a second layer of the pseudo-capacitive material in contact with the other open-cell graphene structure, wherein the surface area of the other three-dimensional open-cell graphene structure is greater than the surface area of the other metal foam substrate.
The capacitor of claim 28, wherein the first layer of the pseudo- capacitive material includes one or more of Ru O 2, Fe₃ 0 4 and Mn O2.
The capacitor of claim 28, wherein the three-dimensional open- cell graphene structure is characterized by a void volume of between about 75 % and about 95 %. 21 S/N 13/519,569
The capacitor of claim 28, wherein the three-dimensional open- cell graphene structure is characterized by the surface area of at least about 2500 meters per gram.
The capacitor of claim 28, characterized by a specific capacitance of at least about 400 Farads per gram. 22
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based electrode (first electrode)
graphene-based capacitor (EDLC or hybrid)
Materials described outside the worked examples.
three-dimensional open-cell graphene structure
metal foam substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific capacitance of capacitor device | ≥ 400 F/g | — |
BET surface area of three-dimensional open-cell graphene structure | ≥ 2500 m2/g |
Patent
Atlas literature
Patent
US 9,263,196Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a conceptual drawing showing chemical vapor deposition of graphene in an open-cell metal foam substrate to form an example open-cell foam …
FIG. 2 is a conceptual drawing showing dissolution of an open-cell metal foam substrate to leave an example open-cell graphene structure; WO 2012/144993 …
FIG. 3 is a conceptual drawing showing electroless deposition of a thin pseudo-capacitive material layer in an open-cell graphene foam to form an example …
FIG. 4 is a conceptual drawing showing a cross section of an example capacitor using two electrodes, wherein each electrode includes an example open-cell foam …
FIG. 5 is a flow diagram showing steps that may be used in making an example open-cell graphene foam as disclosed herein;
FIG. 6 is a block diagram of an automated machine that may be used for making an example open-cell graphene foam using the process steps outlined in
FIG. 7 illustrates a general purpose computing device that may be used to control the automated machine of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene-based electronic apparatus, comprising: a first electrode that includes: a metal foam substrate; and a three-dimensional open-cell graphene structure, formed by chemical vapor deposition on the metal foam substrate, wherein the metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum, and wherein the chemical vapor deposition uses a gas mixture of C H 4:H2: Ar having a molar ratio of CH 4: H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH 4:H 2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture; and a layer of pseudo-capacitive material in contact with the three-dimensional open-cell graphene structure, wherein a surface area of the three-dimensional open-cell graphene structure is greater than a surface area of the metal foam substrate.
The graphene-based electronic apparatus of claim 1, wherein the layer of the pseudo-capacitive material includes one or more of RuO2, Fe₃ 0 4 and Mn O2.
The graphene-based electronic apparatus of claim 1, wherein the three-dimensional open-cell graphene structure is characterized by a void volume of between about 75% and about 95%.
The graphene-based electronic apparatus of claim 1, wherein the three-dimensional open-cell graphene structure is characterized by the surface area of at least about 2500 meters per gram.
The graphene-based electronic apparatus of claim 1, wherein the three-dimensional open-cell graphene structure includes cell walls that average between one and ten layers of graphene.
The graphene-based electronic apparatus of claim 1, further comprising: a separator having a first side in contact with the first electrode; and a second electrode in contact with a second side of the separator, wherein the graphene- based electronic apparatus is configured to operate as a capacitor device. 16 S/N 13/519,569
- 3. canceled
- 8. canceled
A method to make a graphene-based electronic apparatus, comprising: forming a first electrode by depositing a three-dimensional open-cell graphene structure via chemical vapor deposition on an open-cell metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of C H 4:H 2:Ar having a molar ratio of CH 4:H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH4: H 2:Ar includes Ar in about 0% to about 70% of a total volume of the gas mixture, wherein the first electrode includes the open-cell metal foam substrate, and wherein the open-cell metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum; and depositing a layer of pseudo-capacitive material in the th r ee-dimensional open-cell graphene structure of the first electrode, wherein a surface area of the th r ee-dimensional open- cell graphene structure is greater than a surface area of the metal foam substrate.
The method of claim 13, wherein the layer of pseudo-capacative pseudo-capacitive material includes one or more of R uG 2, Fe 3 0 4 and Mn O 2.
The method of claim 13, wherein the layer of pseudo-capacitive material is deposited by an electroless process.
The method of claim 13, wherein the three-dimensional open-cell graphene structure is characterized by a void volume of between about 75% and about 95%.
The method of claim 13, wherein the three-dimensional open-cell graphene structure is characterized by the surface area of at least about 2500 meters per gram.
The method of claim 13, wherein the three-dimensional open-cell graphene structure includes cell walls that average between one and ten layers of graphene.
The method of claim 13, further comprising: forming the first electrode by contacting the three-dimensional open-cell graphene structure to a first electrical lead; contacting the first electrode to a first side of a separator; and contacting a second electrode to a second side of the separator, wherein the graphene- based electronic apparatus is configured to operate as a capacitor device. 18 S/N 13/519,569
- 17. canceled
A system to manufacture a graphene-based capacitor device, comprising: a chemical vapor depositor; an electroless depositor; a capacitor forming machine; and a controller coupled to the chemical vapor depositor, the electroless depositor, and the capacitor forming machine, wherein the controller is configured to: deposit graphene via chemical vapor deposition on an open-cell metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of C H 4:H2: Ar having a molar ratio of C H 4:1H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH 4:H 2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture, and wherein the open-cell metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum; and deposit a first layer of pseudo-capacitive material in a three-dimensional open-cell graphene structure to form a first electrode, wherein the first electrode includes the open- 19 S/N 13/519,569 cell metal foam substrate, and wherein a surface area of the three-dimensional open-cell graphene structure is greater than a surface area of the metal foam substrate.
The system of claim 25, wherein the controller is further configured to: deposit graphene via chemical vapor deposition on the open-cell metal foam substrate; deposit a second layer of the pseudo-capacitive material in another three-dimensional open-cell graphene structure to form a second electrode; contact the first electrode to a first side of a separator; and contact the second electrode with a second side of the separator.
A capacitor, comprising: a first electrode including a metal foam substrate contacts a first surface of a separator and includes a three-dimensional open-cell graphene structure, formed by chemical vapor deposition on the metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of C H 4:H2:Ar having a molar ratio of C H 4:H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH 4: H 2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture, 20 S/N 13/519,569 wherein the metal foam substrate includes one from a set of: copper, ruthenium, cobalt, and platinum, and wherein a surface area of the three-dimensional open-cell graphene structure is greater than a surface area of the metal foam substrate; a first layer of pseudo-capacitive material in contact with the three-dimensional open-cell graphene structure; a second electrode that contacts a second surface of the separator and includes another three-dimensional open-cell graphene structure, formed by chemical vapor deposition on another metal foam substrate, wherein the chemical vapor deposition uses a gas mixture of CH 4:H 2: Ar having a molar ratio of C H 4:1H 2 from about 0.5:1 to about 3:1, and wherein the gas mixture of CH4:H2:Ar includes Ar in about 0% to about 7 0% of a total volume of the gas mixture; and a second layer of the pseudo-capacitive material in contact with the other open-cell graphene structure, wherein the surface area of the other three-dimensional open-cell graphene structure is greater than the surface area of the other metal foam substrate.
The capacitor of claim 28, wherein the first layer of the pseudo- capacitive material includes one or more of Ru O 2, Fe₃ 0 4 and Mn O2.
The capacitor of claim 28, wherein the three-dimensional open- cell graphene structure is characterized by a void volume of between about 75 % and about 95 %. 21 S/N 13/519,569
The capacitor of claim 28, wherein the three-dimensional open- cell graphene structure is characterized by the surface area of at least about 2500 meters per gram.
The capacitor of claim 28, characterized by a specific capacitance of at least about 400 Farads per gram. 22
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based electrode (first electrode)
graphene-based capacitor (EDLC or hybrid)
Materials described outside the worked examples.
three-dimensional open-cell graphene structure
metal foam substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific capacitance of capacitor device | ≥ 400 F/g | — |
BET surface area of three-dimensional open-cell graphene structure | ≥ 2500 m2/g |
pseudo-capacitive material
ruthenium dioxide
RuO₂
iron oxide
Fe₃O₄
manganese dioxide
MnO₂
graphene on nickel foam (CVD process example)
three-dimensional open-cell graphene structure |
void volume of three-dimensional open-cell graphene structure | 75–95 % | three-dimensional open-cell graphene structure |
Flow Rate | 100–350 sccm | — |
Flow Rate | 50–300 sccm | — |
Flow Rate | 100–300 sccm | — |
Flow Rate | 150–250 sccm | — |
pseudo-capacitive material
ruthenium dioxide
RuO₂
iron oxide
Fe₃O₄
manganese dioxide
MnO₂
graphene on nickel foam (CVD process example)
three-dimensional open-cell graphene structure |
void volume of three-dimensional open-cell graphene structure | 75–95 % | three-dimensional open-cell graphene structure |
Flow Rate | 100–350 sccm | — |
Flow Rate | 50–300 sccm | — |
Flow Rate | 100–300 sccm | — |
Flow Rate | 150–250 sccm | — |
pseudo-capacitive material
ruthenium dioxide
RuO₂
iron oxide
Fe₃O₄
manganese dioxide
MnO₂
graphene on nickel foam (CVD process example)
three-dimensional open-cell graphene structure |
void volume of three-dimensional open-cell graphene structure | 75–95 % | three-dimensional open-cell graphene structure |
Flow Rate | 100–350 sccm | — |
Flow Rate | 50–300 sccm | — |
Flow Rate | 100–300 sccm | — |
Flow Rate | 150–250 sccm | — |
pseudo-capacitive material
ruthenium dioxide
RuO₂
iron oxide
Fe₃O₄
manganese dioxide
MnO₂
graphene on nickel foam (CVD process example)
three-dimensional open-cell graphene structure |
void volume of three-dimensional open-cell graphene structure | 75–95 % | three-dimensional open-cell graphene structure |
Flow Rate | 100–350 sccm | — |
Flow Rate | 50–300 sccm | — |
Flow Rate | 100–300 sccm | — |
Flow Rate | 150–250 sccm | — |