Patent
US 10,692,802FLEXIBLE SEMICONDUCTOR DEVICE WITH GRAPHENE TAPE
YOU GE
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,692,802Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1- 5 are cross-sectional side views of various flexible semiconductor devices in accordance with embodiments of the present invention; [0006]
FIG. 2 shows a cross-sectional side view of a semiconductor device 200 in accordance with a second embodiment of the present invention. The second embodiment …
FIG. 3 shows a cross-sectional side view of a semiconductor device 300 in accordance with a third embodiment of the present invention. The third embodiment is …
FIG. 4 shows a cross-sectional side view of a semiconductor device 400 in accordance with a fourth embodiment of the present invention. The fourth embodiment …
FIG. 5 in accordance with an embodiment of the present invention; [0007]
FIG. 6 is a top plan view of a second tape of the semiconductor device of
FIG. 7 is a top plan view of a graphene tape of the semiconductor devices of
FIGS. 8- 10 are top plan views of a flexible semiconductor device in accordance with embodiments of the present invention; 81984586 [0009]
FIG. 9 is a top plan view of the semiconductor device 100 in accordance with another embodiment of the present invention. As shown in
FIG. 10 is a top plan view of a semiconductor device 600 in accordance with yet another embodiment of the present invention. The embodiment shown in
FIGS. 11- 13, 14A, 14B, 15 A, 15B, 16A, 16B and 17 are a series of diagrams illustrating steps in assembling a flexible semiconductor device in accordance with …
FIG. 12, a horizontally non-conductive layer 204 is disposed over the first center area 108 of each of the first tape 102. In a preferred embodiment, the …
FIG. 13, a first semiconductor die 112 is mounted over the first center area 108 of each of the first tape 102 and electrically connected to the plurality of bond …
FIG. 14A. In a preferred embodiment, the pre-half-cut portion 802 is located at least one side of the second tape 116. In another preferred embodiment, as …
FIG. 15 A at line A-A, which shows that the second center area 118 of each second tape 116 is attached over a corresponding first semiconductor die 112, and the …
FIG. 16A, a vacuum is applied between the first and second tapes 102 and 116 to draw the first and second tapes together, such that the first and second tapes 102 …
FIG. 17. In a preferred embodiment, said peeling off is performed before said singulation. [0030]
FIGS. 18- 20 a series of diagrams illustrating steps in assembling a flexible semiconductor device in accordance with another embodiment of the present …
FIG. 19 shows a cross-sectional side view of the horizontally non-conductive layer 204 that is attached to the first tape 102. The plurality of openings 206 …
FIG. 20, the first semiconductor die 112 is mounted to the first tape 102 and electrically connected to the plurality of bond pads 104 by way of a plurality of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A flexible semiconductor device, comprising: a first tape having a plurality of bonding pads and a plurality of conductive traces formed thereon, wherein the plurality of bonding pads and the plurality of conductive traces comprise graphene, wherein the plurality of bonding pads are formed in a first center area of the first tape, and the plurality of conductive traces are formed in the first center area in electrical contact with respective ones of the bonding pads and extending from the bonding pads to a first peripheral area surrounding the first center area; a first semiconductor die attached to the first tape and electrically connected to the plurality of bond pads by way of a plurality of die electrical contacts; and a second tape having a second center area attached to the first semiconductor die, and a second peripheral area that surrounds the second center area, wherein the second peripheral area is attached to the first peripheral area of the first tape, such that the first and second tapes encapsulate the first semiconductor die, the plurality of die electrical contacts, and the plurality of conductive traces. Currently amended
The semiconductor device of claim 1, further comprising a metal plate disposed between the first semiconductor die and the second tape, wherein the metal plate protects the die from being bent. Original
The semiconductor device of claim 1, further comprising: a horizontally non-conductive layer disposed between the first tape and the first semiconductor die that locks the plurality of electrical contacts in place. Original
The semiconductor device of claim 1, wherein at least one of the plurality of conductive traces has a portion exposed from the second tape, wherein the exposed portion of the at least one of the plurality of conductive traces acts as an input and output terminal of the semiconductor device. Original
The semiconductor device of claim 1, wherein the first and second tapes are drawn together by a vacuum. Original
The semiconductor device of claim 1, further comprising a second semiconductor die attached to the first tape and electrically connected to the first semiconductor die by way of the plurality of bond pads and the plurality of conductive traces. Original
Canceled
A method for assembling a semiconductor device, the method comprising: providing a first tape that has a plurality of bonding pads and a plurality of conductive traces formed thereon, wherein the plurality of bonding pads are formed in a first center area of the first tape, and the plurality of conductive traces are electrically connected to and extend from the plurality of bonding pads to a first peripheral area surrounding the first center area; attaching a first semiconductor die to the first tape and electrically connecting the first die to the plurality of bond pads by way of a plurality of die electrical contacts; and attaching a second center area of a second tape to the first semiconductor die, and a second peripheral area surrounding the second center area of the second tape to the first peripheral area of the first tape, wherein the first and second tapes encapsulate the first semiconductor die, the plurality of die electrical contacts, and at least a part of the plurality of conductive traces. Withdrawn
The method of claim 11, further comprising: attaching a metal plate on a top surface of the first semiconductor die, wherein the metal plate is disposed between the first semiconductor die and the second tape. Withdrawn
The method of claim 11, further comprising: attaching a metal plate on a top surface of the first semiconductor die, wherein the metal plate is embedded in the second tape. Withdrawn
The method of claim 11, wherein the second tape comprises a metal plate embedded in the second center area and attached to a top surface of the first semiconductor die. Withdrawn
The method of claim 11, further comprising: forming a horizontally non-conductive layer at least partially over the first center area of the first tape; and curing the horizontally nonconductive layer, wherein the non-conductive layer locks the plurality of die electrical contacts in place. Withdrawn
The method of claim 11, further comprising applying a vacuum between the first and second tapes to draw the first and second tapes together. Withdrawn
The method of claim 11, further comprising peeling off a part of the second tape to expose a portion of at least one of the plurality of conductive traces to allow said exposed portion to act as an input and output terminal of the semiconductor device. Withdrawn
A flexible semiconductor device, comprising: a first tape having a plurality of bonding pads and a plurality of conductive traces formed thereon, wherein the plurality of bonding pads are formed in a first center area of the first tape, and the plurality of conductive traces are formed in the first center area in electrical contact with respective ones of the bonding pads and extending from the bonding pads to a first peripheral area surrounding the first center area; a first semiconductor die attached to the first tape and electrically connected to the plurality of bond pads by way of a plurality of die electrical contacts; and a second tape having a second center area attached to the first semiconductor die, and a second peripheral area that surrounds the second center area, wherein the second peripheral area is attached to the first peripheral area of the first tape, such that the first and second tapes encapsulate the first semiconductor die, the plurality of die electrical contacts, and the plurality of conductive traces. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
flexible semiconductor device
Materials described outside the worked examples.
graphene
anisotropic conductive film
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 13, a first semiconductor die 112 is mounted over the first center area 108 of each of the first tape 102 and electrically connected to the plurality of bond …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
horizontally non-conductive layer thickness | 10–50 µm | — |
Patent
Atlas literature
Patent
US 10,692,802Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1- 5 are cross-sectional side views of various flexible semiconductor devices in accordance with embodiments of the present invention; [0006]
FIG. 2 shows a cross-sectional side view of a semiconductor device 200 in accordance with a second embodiment of the present invention. The second embodiment …
FIG. 3 shows a cross-sectional side view of a semiconductor device 300 in accordance with a third embodiment of the present invention. The third embodiment is …
FIG. 4 shows a cross-sectional side view of a semiconductor device 400 in accordance with a fourth embodiment of the present invention. The fourth embodiment …
FIG. 5 in accordance with an embodiment of the present invention; [0007]
FIG. 6 is a top plan view of a second tape of the semiconductor device of
FIG. 7 is a top plan view of a graphene tape of the semiconductor devices of
FIGS. 8- 10 are top plan views of a flexible semiconductor device in accordance with embodiments of the present invention; 81984586 [0009]
FIG. 9 is a top plan view of the semiconductor device 100 in accordance with another embodiment of the present invention. As shown in
FIG. 10 is a top plan view of a semiconductor device 600 in accordance with yet another embodiment of the present invention. The embodiment shown in
FIGS. 11- 13, 14A, 14B, 15 A, 15B, 16A, 16B and 17 are a series of diagrams illustrating steps in assembling a flexible semiconductor device in accordance with …
FIG. 12, a horizontally non-conductive layer 204 is disposed over the first center area 108 of each of the first tape 102. In a preferred embodiment, the …
FIG. 13, a first semiconductor die 112 is mounted over the first center area 108 of each of the first tape 102 and electrically connected to the plurality of bond …
FIG. 14A. In a preferred embodiment, the pre-half-cut portion 802 is located at least one side of the second tape 116. In another preferred embodiment, as …
FIG. 15 A at line A-A, which shows that the second center area 118 of each second tape 116 is attached over a corresponding first semiconductor die 112, and the …
FIG. 16A, a vacuum is applied between the first and second tapes 102 and 116 to draw the first and second tapes together, such that the first and second tapes 102 …
FIG. 17. In a preferred embodiment, said peeling off is performed before said singulation. [0030]
FIGS. 18- 20 a series of diagrams illustrating steps in assembling a flexible semiconductor device in accordance with another embodiment of the present …
FIG. 19 shows a cross-sectional side view of the horizontally non-conductive layer 204 that is attached to the first tape 102. The plurality of openings 206 …
FIG. 20, the first semiconductor die 112 is mounted to the first tape 102 and electrically connected to the plurality of bond pads 104 by way of a plurality of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A flexible semiconductor device, comprising: a first tape having a plurality of bonding pads and a plurality of conductive traces formed thereon, wherein the plurality of bonding pads and the plurality of conductive traces comprise graphene, wherein the plurality of bonding pads are formed in a first center area of the first tape, and the plurality of conductive traces are formed in the first center area in electrical contact with respective ones of the bonding pads and extending from the bonding pads to a first peripheral area surrounding the first center area; a first semiconductor die attached to the first tape and electrically connected to the plurality of bond pads by way of a plurality of die electrical contacts; and a second tape having a second center area attached to the first semiconductor die, and a second peripheral area that surrounds the second center area, wherein the second peripheral area is attached to the first peripheral area of the first tape, such that the first and second tapes encapsulate the first semiconductor die, the plurality of die electrical contacts, and the plurality of conductive traces. Currently amended
The semiconductor device of claim 1, further comprising a metal plate disposed between the first semiconductor die and the second tape, wherein the metal plate protects the die from being bent. Original
The semiconductor device of claim 1, further comprising: a horizontally non-conductive layer disposed between the first tape and the first semiconductor die that locks the plurality of electrical contacts in place. Original
The semiconductor device of claim 1, wherein at least one of the plurality of conductive traces has a portion exposed from the second tape, wherein the exposed portion of the at least one of the plurality of conductive traces acts as an input and output terminal of the semiconductor device. Original
The semiconductor device of claim 1, wherein the first and second tapes are drawn together by a vacuum. Original
The semiconductor device of claim 1, further comprising a second semiconductor die attached to the first tape and electrically connected to the first semiconductor die by way of the plurality of bond pads and the plurality of conductive traces. Original
Canceled
A method for assembling a semiconductor device, the method comprising: providing a first tape that has a plurality of bonding pads and a plurality of conductive traces formed thereon, wherein the plurality of bonding pads are formed in a first center area of the first tape, and the plurality of conductive traces are electrically connected to and extend from the plurality of bonding pads to a first peripheral area surrounding the first center area; attaching a first semiconductor die to the first tape and electrically connecting the first die to the plurality of bond pads by way of a plurality of die electrical contacts; and attaching a second center area of a second tape to the first semiconductor die, and a second peripheral area surrounding the second center area of the second tape to the first peripheral area of the first tape, wherein the first and second tapes encapsulate the first semiconductor die, the plurality of die electrical contacts, and at least a part of the plurality of conductive traces. Withdrawn
The method of claim 11, further comprising: attaching a metal plate on a top surface of the first semiconductor die, wherein the metal plate is disposed between the first semiconductor die and the second tape. Withdrawn
The method of claim 11, further comprising: attaching a metal plate on a top surface of the first semiconductor die, wherein the metal plate is embedded in the second tape. Withdrawn
The method of claim 11, wherein the second tape comprises a metal plate embedded in the second center area and attached to a top surface of the first semiconductor die. Withdrawn
The method of claim 11, further comprising: forming a horizontally non-conductive layer at least partially over the first center area of the first tape; and curing the horizontally nonconductive layer, wherein the non-conductive layer locks the plurality of die electrical contacts in place. Withdrawn
The method of claim 11, further comprising applying a vacuum between the first and second tapes to draw the first and second tapes together. Withdrawn
The method of claim 11, further comprising peeling off a part of the second tape to expose a portion of at least one of the plurality of conductive traces to allow said exposed portion to act as an input and output terminal of the semiconductor device. Withdrawn
A flexible semiconductor device, comprising: a first tape having a plurality of bonding pads and a plurality of conductive traces formed thereon, wherein the plurality of bonding pads are formed in a first center area of the first tape, and the plurality of conductive traces are formed in the first center area in electrical contact with respective ones of the bonding pads and extending from the bonding pads to a first peripheral area surrounding the first center area; a first semiconductor die attached to the first tape and electrically connected to the plurality of bond pads by way of a plurality of die electrical contacts; and a second tape having a second center area attached to the first semiconductor die, and a second peripheral area that surrounds the second center area, wherein the second peripheral area is attached to the first peripheral area of the first tape, such that the first and second tapes encapsulate the first semiconductor die, the plurality of die electrical contacts, and the plurality of conductive traces. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
flexible semiconductor device
Materials described outside the worked examples.
graphene
anisotropic conductive film
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 13, a first semiconductor die 112 is mounted over the first center area 108 of each of the first tape 102 and electrically connected to the plurality of bond …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
horizontally non-conductive layer thickness | 10–50 µm | — |
Patent
Atlas literature
Patent
US 10,692,802Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1- 5 are cross-sectional side views of various flexible semiconductor devices in accordance with embodiments of the present invention; [0006]
FIG. 2 shows a cross-sectional side view of a semiconductor device 200 in accordance with a second embodiment of the present invention. The second embodiment …
FIG. 3 shows a cross-sectional side view of a semiconductor device 300 in accordance with a third embodiment of the present invention. The third embodiment is …
FIG. 4 shows a cross-sectional side view of a semiconductor device 400 in accordance with a fourth embodiment of the present invention. The fourth embodiment …
FIG. 5 in accordance with an embodiment of the present invention; [0007]
FIG. 6 is a top plan view of a second tape of the semiconductor device of
FIG. 7 is a top plan view of a graphene tape of the semiconductor devices of
FIGS. 8- 10 are top plan views of a flexible semiconductor device in accordance with embodiments of the present invention; 81984586 [0009]
FIG. 9 is a top plan view of the semiconductor device 100 in accordance with another embodiment of the present invention. As shown in
FIG. 10 is a top plan view of a semiconductor device 600 in accordance with yet another embodiment of the present invention. The embodiment shown in
FIGS. 11- 13, 14A, 14B, 15 A, 15B, 16A, 16B and 17 are a series of diagrams illustrating steps in assembling a flexible semiconductor device in accordance with …
FIG. 12, a horizontally non-conductive layer 204 is disposed over the first center area 108 of each of the first tape 102. In a preferred embodiment, the …
FIG. 13, a first semiconductor die 112 is mounted over the first center area 108 of each of the first tape 102 and electrically connected to the plurality of bond …
FIG. 14A. In a preferred embodiment, the pre-half-cut portion 802 is located at least one side of the second tape 116. In another preferred embodiment, as …
FIG. 15 A at line A-A, which shows that the second center area 118 of each second tape 116 is attached over a corresponding first semiconductor die 112, and the …
FIG. 16A, a vacuum is applied between the first and second tapes 102 and 116 to draw the first and second tapes together, such that the first and second tapes 102 …
FIG. 17. In a preferred embodiment, said peeling off is performed before said singulation. [0030]
FIGS. 18- 20 a series of diagrams illustrating steps in assembling a flexible semiconductor device in accordance with another embodiment of the present …
FIG. 19 shows a cross-sectional side view of the horizontally non-conductive layer 204 that is attached to the first tape 102. The plurality of openings 206 …
FIG. 20, the first semiconductor die 112 is mounted to the first tape 102 and electrically connected to the plurality of bond pads 104 by way of a plurality of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A flexible semiconductor device, comprising: a first tape having a plurality of bonding pads and a plurality of conductive traces formed thereon, wherein the plurality of bonding pads and the plurality of conductive traces comprise graphene, wherein the plurality of bonding pads are formed in a first center area of the first tape, and the plurality of conductive traces are formed in the first center area in electrical contact with respective ones of the bonding pads and extending from the bonding pads to a first peripheral area surrounding the first center area; a first semiconductor die attached to the first tape and electrically connected to the plurality of bond pads by way of a plurality of die electrical contacts; and a second tape having a second center area attached to the first semiconductor die, and a second peripheral area that surrounds the second center area, wherein the second peripheral area is attached to the first peripheral area of the first tape, such that the first and second tapes encapsulate the first semiconductor die, the plurality of die electrical contacts, and the plurality of conductive traces. Currently amended
The semiconductor device of claim 1, further comprising a metal plate disposed between the first semiconductor die and the second tape, wherein the metal plate protects the die from being bent. Original
The semiconductor device of claim 1, further comprising: a horizontally non-conductive layer disposed between the first tape and the first semiconductor die that locks the plurality of electrical contacts in place. Original
The semiconductor device of claim 1, wherein at least one of the plurality of conductive traces has a portion exposed from the second tape, wherein the exposed portion of the at least one of the plurality of conductive traces acts as an input and output terminal of the semiconductor device. Original
The semiconductor device of claim 1, wherein the first and second tapes are drawn together by a vacuum. Original
The semiconductor device of claim 1, further comprising a second semiconductor die attached to the first tape and electrically connected to the first semiconductor die by way of the plurality of bond pads and the plurality of conductive traces. Original
Canceled
A method for assembling a semiconductor device, the method comprising: providing a first tape that has a plurality of bonding pads and a plurality of conductive traces formed thereon, wherein the plurality of bonding pads are formed in a first center area of the first tape, and the plurality of conductive traces are electrically connected to and extend from the plurality of bonding pads to a first peripheral area surrounding the first center area; attaching a first semiconductor die to the first tape and electrically connecting the first die to the plurality of bond pads by way of a plurality of die electrical contacts; and attaching a second center area of a second tape to the first semiconductor die, and a second peripheral area surrounding the second center area of the second tape to the first peripheral area of the first tape, wherein the first and second tapes encapsulate the first semiconductor die, the plurality of die electrical contacts, and at least a part of the plurality of conductive traces. Withdrawn
The method of claim 11, further comprising: attaching a metal plate on a top surface of the first semiconductor die, wherein the metal plate is disposed between the first semiconductor die and the second tape. Withdrawn
The method of claim 11, further comprising: attaching a metal plate on a top surface of the first semiconductor die, wherein the metal plate is embedded in the second tape. Withdrawn
The method of claim 11, wherein the second tape comprises a metal plate embedded in the second center area and attached to a top surface of the first semiconductor die. Withdrawn
The method of claim 11, further comprising: forming a horizontally non-conductive layer at least partially over the first center area of the first tape; and curing the horizontally nonconductive layer, wherein the non-conductive layer locks the plurality of die electrical contacts in place. Withdrawn
The method of claim 11, further comprising applying a vacuum between the first and second tapes to draw the first and second tapes together. Withdrawn
The method of claim 11, further comprising peeling off a part of the second tape to expose a portion of at least one of the plurality of conductive traces to allow said exposed portion to act as an input and output terminal of the semiconductor device. Withdrawn
A flexible semiconductor device, comprising: a first tape having a plurality of bonding pads and a plurality of conductive traces formed thereon, wherein the plurality of bonding pads are formed in a first center area of the first tape, and the plurality of conductive traces are formed in the first center area in electrical contact with respective ones of the bonding pads and extending from the bonding pads to a first peripheral area surrounding the first center area; a first semiconductor die attached to the first tape and electrically connected to the plurality of bond pads by way of a plurality of die electrical contacts; and a second tape having a second center area attached to the first semiconductor die, and a second peripheral area that surrounds the second center area, wherein the second peripheral area is attached to the first peripheral area of the first tape, such that the first and second tapes encapsulate the first semiconductor die, the plurality of die electrical contacts, and the plurality of conductive traces. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
flexible semiconductor device
Materials described outside the worked examples.
graphene
anisotropic conductive film
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 13, a first semiconductor die 112 is mounted over the first center area 108 of each of the first tape 102 and electrically connected to the plurality of bond …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
horizontally non-conductive layer thickness | 10–50 µm | — |
Patent
Atlas literature
Patent
US 10,692,802Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1- 5 are cross-sectional side views of various flexible semiconductor devices in accordance with embodiments of the present invention; [0006]
FIG. 2 shows a cross-sectional side view of a semiconductor device 200 in accordance with a second embodiment of the present invention. The second embodiment …
FIG. 3 shows a cross-sectional side view of a semiconductor device 300 in accordance with a third embodiment of the present invention. The third embodiment is …
FIG. 4 shows a cross-sectional side view of a semiconductor device 400 in accordance with a fourth embodiment of the present invention. The fourth embodiment …
FIG. 5 in accordance with an embodiment of the present invention; [0007]
FIG. 6 is a top plan view of a second tape of the semiconductor device of
FIG. 7 is a top plan view of a graphene tape of the semiconductor devices of
FIGS. 8- 10 are top plan views of a flexible semiconductor device in accordance with embodiments of the present invention; 81984586 [0009]
FIG. 9 is a top plan view of the semiconductor device 100 in accordance with another embodiment of the present invention. As shown in
FIG. 10 is a top plan view of a semiconductor device 600 in accordance with yet another embodiment of the present invention. The embodiment shown in
FIGS. 11- 13, 14A, 14B, 15 A, 15B, 16A, 16B and 17 are a series of diagrams illustrating steps in assembling a flexible semiconductor device in accordance with …
FIG. 12, a horizontally non-conductive layer 204 is disposed over the first center area 108 of each of the first tape 102. In a preferred embodiment, the …
FIG. 13, a first semiconductor die 112 is mounted over the first center area 108 of each of the first tape 102 and electrically connected to the plurality of bond …
FIG. 14A. In a preferred embodiment, the pre-half-cut portion 802 is located at least one side of the second tape 116. In another preferred embodiment, as …
FIG. 15 A at line A-A, which shows that the second center area 118 of each second tape 116 is attached over a corresponding first semiconductor die 112, and the …
FIG. 16A, a vacuum is applied between the first and second tapes 102 and 116 to draw the first and second tapes together, such that the first and second tapes 102 …
FIG. 17. In a preferred embodiment, said peeling off is performed before said singulation. [0030]
FIGS. 18- 20 a series of diagrams illustrating steps in assembling a flexible semiconductor device in accordance with another embodiment of the present …
FIG. 19 shows a cross-sectional side view of the horizontally non-conductive layer 204 that is attached to the first tape 102. The plurality of openings 206 …
FIG. 20, the first semiconductor die 112 is mounted to the first tape 102 and electrically connected to the plurality of bond pads 104 by way of a plurality of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A flexible semiconductor device, comprising: a first tape having a plurality of bonding pads and a plurality of conductive traces formed thereon, wherein the plurality of bonding pads and the plurality of conductive traces comprise graphene, wherein the plurality of bonding pads are formed in a first center area of the first tape, and the plurality of conductive traces are formed in the first center area in electrical contact with respective ones of the bonding pads and extending from the bonding pads to a first peripheral area surrounding the first center area; a first semiconductor die attached to the first tape and electrically connected to the plurality of bond pads by way of a plurality of die electrical contacts; and a second tape having a second center area attached to the first semiconductor die, and a second peripheral area that surrounds the second center area, wherein the second peripheral area is attached to the first peripheral area of the first tape, such that the first and second tapes encapsulate the first semiconductor die, the plurality of die electrical contacts, and the plurality of conductive traces. Currently amended
The semiconductor device of claim 1, further comprising a metal plate disposed between the first semiconductor die and the second tape, wherein the metal plate protects the die from being bent. Original
The semiconductor device of claim 1, further comprising: a horizontally non-conductive layer disposed between the first tape and the first semiconductor die that locks the plurality of electrical contacts in place. Original
The semiconductor device of claim 1, wherein at least one of the plurality of conductive traces has a portion exposed from the second tape, wherein the exposed portion of the at least one of the plurality of conductive traces acts as an input and output terminal of the semiconductor device. Original
The semiconductor device of claim 1, wherein the first and second tapes are drawn together by a vacuum. Original
The semiconductor device of claim 1, further comprising a second semiconductor die attached to the first tape and electrically connected to the first semiconductor die by way of the plurality of bond pads and the plurality of conductive traces. Original
Canceled
A method for assembling a semiconductor device, the method comprising: providing a first tape that has a plurality of bonding pads and a plurality of conductive traces formed thereon, wherein the plurality of bonding pads are formed in a first center area of the first tape, and the plurality of conductive traces are electrically connected to and extend from the plurality of bonding pads to a first peripheral area surrounding the first center area; attaching a first semiconductor die to the first tape and electrically connecting the first die to the plurality of bond pads by way of a plurality of die electrical contacts; and attaching a second center area of a second tape to the first semiconductor die, and a second peripheral area surrounding the second center area of the second tape to the first peripheral area of the first tape, wherein the first and second tapes encapsulate the first semiconductor die, the plurality of die electrical contacts, and at least a part of the plurality of conductive traces. Withdrawn
The method of claim 11, further comprising: attaching a metal plate on a top surface of the first semiconductor die, wherein the metal plate is disposed between the first semiconductor die and the second tape. Withdrawn
The method of claim 11, further comprising: attaching a metal plate on a top surface of the first semiconductor die, wherein the metal plate is embedded in the second tape. Withdrawn
The method of claim 11, wherein the second tape comprises a metal plate embedded in the second center area and attached to a top surface of the first semiconductor die. Withdrawn
The method of claim 11, further comprising: forming a horizontally non-conductive layer at least partially over the first center area of the first tape; and curing the horizontally nonconductive layer, wherein the non-conductive layer locks the plurality of die electrical contacts in place. Withdrawn
The method of claim 11, further comprising applying a vacuum between the first and second tapes to draw the first and second tapes together. Withdrawn
The method of claim 11, further comprising peeling off a part of the second tape to expose a portion of at least one of the plurality of conductive traces to allow said exposed portion to act as an input and output terminal of the semiconductor device. Withdrawn
A flexible semiconductor device, comprising: a first tape having a plurality of bonding pads and a plurality of conductive traces formed thereon, wherein the plurality of bonding pads are formed in a first center area of the first tape, and the plurality of conductive traces are formed in the first center area in electrical contact with respective ones of the bonding pads and extending from the bonding pads to a first peripheral area surrounding the first center area; a first semiconductor die attached to the first tape and electrically connected to the plurality of bond pads by way of a plurality of die electrical contacts; and a second tape having a second center area attached to the first semiconductor die, and a second peripheral area that surrounds the second center area, wherein the second peripheral area is attached to the first peripheral area of the first tape, such that the first and second tapes encapsulate the first semiconductor die, the plurality of die electrical contacts, and the plurality of conductive traces. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
flexible semiconductor device
Materials described outside the worked examples.
graphene
anisotropic conductive film
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 13, a first semiconductor die 112 is mounted over the first center area 108 of each of the first tape 102 and electrically connected to the plurality of bond …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
horizontally non-conductive layer thickness | 10–50 µm | — |
B-stage epoxy
solder balls or solder bumps
FIG. 20, the first semiconductor die 112 is mounted to the first tape 102 and electrically connected to the plurality of bond pads 104 by way of a plurality of …
B-stage epoxy
solder balls or solder bumps
FIG. 20, the first semiconductor die 112 is mounted to the first tape 102 and electrically connected to the plurality of bond pads 104 by way of a plurality of …
B-stage epoxy
solder balls or solder bumps
FIG. 20, the first semiconductor die 112 is mounted to the first tape 102 and electrically connected to the plurality of bond pads 104 by way of a plurality of …
B-stage epoxy
solder balls or solder bumps
FIG. 20, the first semiconductor die 112 is mounted to the first tape 102 and electrically connected to the plurality of bond pads 104 by way of a plurality of …