Patent
US 10,075,207GaAs/SiGe-BiCMOS-Based Transceiver System-in-Package for E-Band Frequency Applications
Andrea Betti-Berutto
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,075,207Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 corresponds to the transmitter side of a millimeter-wave e- band transceiver. The SMT interfaces of the package 110 are at low frequency, including the …
FIG. 2 are configured at a correspondingly low frequency, including the I and Q baseband outputs 220 and the local oscillator input 230. In addition, the …
FIG. 3, depicted is one example of a PCB 300 on which the above SMT packages 110 and 210 may be implemented. In certain embodiments, PCB 300 may be a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(CURRENTLY A M ENDED) An e-band transceiver comprising a transmitter circuit and a receiver circuit, wherein the transmitter circuit comprises: a surface mounted technology (SMT) module including: a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (p H EMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifer; and a non-volatile memor y confi q ured to store calibration data, wherein said calibration data (i) allows a chip by chip calibration and (ii) avoids a calibration re j ection procedure.
The e-band transceiver of claim 1, wherein the SiGe B i CMOS converter further comprises a digital interface. Original
The e-band transceiver of claim 1, wherein the SMT module is a system-in-package chip. Original
The e-band transceiver of claim 1, wherein the receiver circuit comprises: a receiver-side SMT module including: a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier. Original
The e-band transceiver according to claim 1, wherein said calibration comprises accounting for mixer bias for full rejection of local oscillator leakage. New
The e-band transceiver according to claim 1, wherein said calibration is performed during a package production test phase. New
The e-band transceiver according to claim 1, wherein said calibration compensates for process variations of the GaAs output amplifier. New
The apparatus according to claim 1, wherein said amplifier is configured to provide higher power levels and higher linearity on a transmitter side. New
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
e-band transmitter SMT module (System-in-Package)
e-band receiver SMT module (System-in-Package)
Materials described outside the worked examples.
silicon-germanium BiCMOS
SiGe
gallium arsenide pHEMT
GaAs
Patent
Atlas literature
Patent
US 10,075,207Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 corresponds to the transmitter side of a millimeter-wave e- band transceiver. The SMT interfaces of the package 110 are at low frequency, including the …
FIG. 2 are configured at a correspondingly low frequency, including the I and Q baseband outputs 220 and the local oscillator input 230. In addition, the …
FIG. 3, depicted is one example of a PCB 300 on which the above SMT packages 110 and 210 may be implemented. In certain embodiments, PCB 300 may be a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(CURRENTLY A M ENDED) An e-band transceiver comprising a transmitter circuit and a receiver circuit, wherein the transmitter circuit comprises: a surface mounted technology (SMT) module including: a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (p H EMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifer; and a non-volatile memor y confi q ured to store calibration data, wherein said calibration data (i) allows a chip by chip calibration and (ii) avoids a calibration re j ection procedure.
The e-band transceiver of claim 1, wherein the SiGe B i CMOS converter further comprises a digital interface. Original
The e-band transceiver of claim 1, wherein the SMT module is a system-in-package chip. Original
The e-band transceiver of claim 1, wherein the receiver circuit comprises: a receiver-side SMT module including: a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier. Original
The e-band transceiver according to claim 1, wherein said calibration comprises accounting for mixer bias for full rejection of local oscillator leakage. New
The e-band transceiver according to claim 1, wherein said calibration is performed during a package production test phase. New
The e-band transceiver according to claim 1, wherein said calibration compensates for process variations of the GaAs output amplifier. New
The apparatus according to claim 1, wherein said amplifier is configured to provide higher power levels and higher linearity on a transmitter side. New
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
e-band transmitter SMT module (System-in-Package)
e-band receiver SMT module (System-in-Package)
Materials described outside the worked examples.
silicon-germanium BiCMOS
SiGe
gallium arsenide pHEMT
GaAs
Patent
Atlas literature
Patent
US 10,075,207Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 corresponds to the transmitter side of a millimeter-wave e- band transceiver. The SMT interfaces of the package 110 are at low frequency, including the …
FIG. 2 are configured at a correspondingly low frequency, including the I and Q baseband outputs 220 and the local oscillator input 230. In addition, the …
FIG. 3, depicted is one example of a PCB 300 on which the above SMT packages 110 and 210 may be implemented. In certain embodiments, PCB 300 may be a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(CURRENTLY A M ENDED) An e-band transceiver comprising a transmitter circuit and a receiver circuit, wherein the transmitter circuit comprises: a surface mounted technology (SMT) module including: a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (p H EMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifer; and a non-volatile memor y confi q ured to store calibration data, wherein said calibration data (i) allows a chip by chip calibration and (ii) avoids a calibration re j ection procedure.
The e-band transceiver of claim 1, wherein the SiGe B i CMOS converter further comprises a digital interface. Original
The e-band transceiver of claim 1, wherein the SMT module is a system-in-package chip. Original
The e-band transceiver of claim 1, wherein the receiver circuit comprises: a receiver-side SMT module including: a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier. Original
The e-band transceiver according to claim 1, wherein said calibration comprises accounting for mixer bias for full rejection of local oscillator leakage. New
The e-band transceiver according to claim 1, wherein said calibration is performed during a package production test phase. New
The e-band transceiver according to claim 1, wherein said calibration compensates for process variations of the GaAs output amplifier. New
The apparatus according to claim 1, wherein said amplifier is configured to provide higher power levels and higher linearity on a transmitter side. New
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
e-band transmitter SMT module (System-in-Package)
e-band receiver SMT module (System-in-Package)
Materials described outside the worked examples.
silicon-germanium BiCMOS
SiGe
gallium arsenide pHEMT
GaAs
Patent
Atlas literature
Patent
US 10,075,207Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 corresponds to the transmitter side of a millimeter-wave e- band transceiver. The SMT interfaces of the package 110 are at low frequency, including the …
FIG. 2 are configured at a correspondingly low frequency, including the I and Q baseband outputs 220 and the local oscillator input 230. In addition, the …
FIG. 3, depicted is one example of a PCB 300 on which the above SMT packages 110 and 210 may be implemented. In certain embodiments, PCB 300 may be a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(CURRENTLY A M ENDED) An e-band transceiver comprising a transmitter circuit and a receiver circuit, wherein the transmitter circuit comprises: a surface mounted technology (SMT) module including: a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (p H EMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifer; and a non-volatile memor y confi q ured to store calibration data, wherein said calibration data (i) allows a chip by chip calibration and (ii) avoids a calibration re j ection procedure.
The e-band transceiver of claim 1, wherein the SiGe B i CMOS converter further comprises a digital interface. Original
The e-band transceiver of claim 1, wherein the SMT module is a system-in-package chip. Original
The e-band transceiver of claim 1, wherein the receiver circuit comprises: a receiver-side SMT module including: a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier. Original
The e-band transceiver according to claim 1, wherein said calibration comprises accounting for mixer bias for full rejection of local oscillator leakage. New
The e-band transceiver according to claim 1, wherein said calibration is performed during a package production test phase. New
The e-band transceiver according to claim 1, wherein said calibration compensates for process variations of the GaAs output amplifier. New
The apparatus according to claim 1, wherein said amplifier is configured to provide higher power levels and higher linearity on a transmitter side. New
. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
e-band transmitter SMT module (System-in-Package)
e-band receiver SMT module (System-in-Package)
Materials described outside the worked examples.
silicon-germanium BiCMOS
SiGe
gallium arsenide pHEMT
GaAs