Patent
GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE
US
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FIG. 1 is a diagram schemat i ca l ly showing a c ross section of a gallium nitride-based compound semiconductor 25 light-emitting de v ice of the present …
FIG. 2 is a diagram sh o win g another example of a positive electrode ha v ing openings. FI G. 4 is a diagram showing yet a n othe r example of a positive …
FIG. 3) between the bars of the lattice or the teeth of t h e comb are preferably from 1 t o 50 p m, more preferably from 2 to 30 m, and still more preferably …
FIG. 4 may be exemplified. In cases of lattice pattern and comb-like pattern, 1 5 the widths (a in
FIG. 5 is a SE M photograph (at a magnification of 15, 0 00 times) of a surface of a roughened region of the gallium nitride-based compound semiconductor light- …
FIG. 6. is a S EM photograph (at a magnificati o n of 20,000 times) of a cr o ss section of the r o ughened regi o ns after resi n- 35 packaging which will be …
FIG. 7 is a TE M photograph o f a cross section of the light-emit tin g device f o ur-side portion of a conventional gallium nitride-based compound …
FIG. 9. 30 A stacked structure of the gallium nitride-based compound se m ico n ductor h a s been structured such that an n-type semiconductor layer 3 composed …
FIG. 25 2 and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
.
A gallium nitride-based compound semiconductor light- emitting device comprising a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconducto r layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n type semiconductor layer the n-ty p e semiconductor la y er, wherein the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surfaces whose apical portions are semispherical.
The gallium nitride-based compound semiconductor light- emitting device according to c -aiml claim 2, wherein diameters of protruding portions (particulates) of the roughened surface are from 0.01 to 3 pm.
The gallium nitride-based compound semiconductor light- emitting device according to e-aim4 claim 2, wherein heights of the protruding portions of the roughened surface are from 0.01 to 1 m.
(cur r ently amended) The gallium nitride-based compound semiconductor light- emitting device according to c -aim1 claim 2, wherein the roughened surface also exists between the positive electrode and the negative electrode.
A lamp comprising the gallium nitride-based according to Elaim4 claim 2.
.
The gallium nitride-based compound semiconductor light- emitting device according to clai4claim 2, wherein the positive electrode having the openings is in a lattice pattern or a comb-like pattern.
-2- AMENDMENT UNDER 37 C.F.R. § 1.111 Application No. 12/097,139 (Attorney Docket No. Q₉₂₁₇₁) 5. The gallium nitride-based compound semiconductor light-emitting device according to claim 4, wherein widths of bars of the lattice pattern or teeth of the comb- like pattern are from 1 pm to 50 pm.
The gallium nitride-based compound semiconductor light-emitting device according to claim 4, wherein a distance between bars of the lattice pattern or teeth of the comb-like pattern is from 1 pm to 50 g m.
The gallium nitride-based compound semiconductor light- emitting device according to claim4claim 2, wherein heights of upper ends of the roughened surface are from 0.1 to 2 p m from a surface at which the negative electrode is formed.
The gallium nitride-based compound semiconductor light-emitting device according to claim 8, wherein the heights of upper ends of the roughened surface are the same height as the surface of the p-type semiconductor layer.
-3- AMENDMENT UNDER 37 C.F.R. § 1.111 Application No. 12/097,139 (Attorney Docket No. Q₉₂₁₇₁) 11. The gallium nitride-based compound semiconductor light- emitting device according to claim4claim 2, wherein a density. of the protruding portions (particulates) of the roughened surface is from 1 x 1 05 pieces/mm2 to 1 x 108 pieces/mm2.
The gallium nitride-based compound semiconductor light- emitting device according to cahi4claim 2, wherein the roughened surface also exists at four sides of the light-emitting device.
A method for manufacturing a gallium nitridebased- nitride- based compound semiconductor light-emitting device, comprising the following steps (1) to (4) of: (1) stacking an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer which are formed of a gallium nitride-based compound semiconductor, in this order on a substrate; (2) forming a positive electrode having openings on the p-type semiconductor layer; (3) forming a mask formed of metal microparticles on the p-type semiconductor layer corresponding to the openings; and (4) performing dry etching onto the gallium nitride-based compound semiconductor from above the mask.
-4- AMENDMENT UNDER 37 C.F.R. § 1.111 Application No. 12/097,139 (Attorney Docket No. Q₉₂₁₇₁) 15. The method according to claim 14, wherein the step (3) comprises the step of forming a metal thin film on the p-type semiconductor layer and the step of a thermal treatment thereafter.
The method according to claim 14, wherein selected from the group consisting of Ni, Au, Sn, at least one kind of these metals.
A gallium nitride-based compound semiconductor method according to claim 14.
An electronic equipment incorporating the
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Description of a gallium nitride-based compound semiconductor light-emitting device with a positive electrode having openings (lattice or comb-like pattern) and a roughened p-type semiconductor layer surface at the openings. The roughened surface is derived from spherical particulates with semispherical apical protruding portions. Particulate diameters are 0.01–3 µm, heights 0.01–3 µm, density 1×10⁵–1×10⁸ pieces/mm². Heights of upper ends of roughened surface are 0.1–2.0 µm from the negative electrode surface. Roughening is achieved by forming metal microparticle mask and performing dry etching. The roughened region may also exist at four sides and between electrodes.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based compound semiconductor light-emitting device
Materials described outside the worked examples.
metal microparticles (Ni, Au, Sn, or alloy containing Ge)
metal (Ge or low melting point alloy containing Ge)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6. is a S EM photograph (at a magnificati o n of 20,000 times) of a cr o ss section of the r o ughened regi o ns after resi n- 35 packaging which will be …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
diameter of protruding portions (particulates) of roughened surface | 0.01–3 | gallium nitride-based compound semiconductor |
height of upper ends of roughened surface from negative electrode surface |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram schemat i ca l ly showing a c ross section of a gallium nitride-based compound semiconductor 25 light-emitting de v ice of the present …
FIG. 2 is a diagram sh o win g another example of a positive electrode ha v ing openings. FI G. 4 is a diagram showing yet a n othe r example of a positive …
FIG. 3) between the bars of the lattice or the teeth of t h e comb are preferably from 1 t o 50 p m, more preferably from 2 to 30 m, and still more preferably …
FIG. 4 may be exemplified. In cases of lattice pattern and comb-like pattern, 1 5 the widths (a in
FIG. 5 is a SE M photograph (at a magnification of 15, 0 00 times) of a surface of a roughened region of the gallium nitride-based compound semiconductor light- …
FIG. 6. is a S EM photograph (at a magnificati o n of 20,000 times) of a cr o ss section of the r o ughened regi o ns after resi n- 35 packaging which will be …
FIG. 7 is a TE M photograph o f a cross section of the light-emit tin g device f o ur-side portion of a conventional gallium nitride-based compound …
FIG. 9. 30 A stacked structure of the gallium nitride-based compound se m ico n ductor h a s been structured such that an n-type semiconductor layer 3 composed …
FIG. 25 2 and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
.
A gallium nitride-based compound semiconductor light- emitting device comprising a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconducto r layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n type semiconductor layer the n-ty p e semiconductor la y er, wherein the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surfaces whose apical portions are semispherical.
The gallium nitride-based compound semiconductor light- emitting device according to c -aiml claim 2, wherein diameters of protruding portions (particulates) of the roughened surface are from 0.01 to 3 pm.
The gallium nitride-based compound semiconductor light- emitting device according to e-aim4 claim 2, wherein heights of the protruding portions of the roughened surface are from 0.01 to 1 m.
(cur r ently amended) The gallium nitride-based compound semiconductor light- emitting device according to c -aim1 claim 2, wherein the roughened surface also exists between the positive electrode and the negative electrode.
A lamp comprising the gallium nitride-based according to Elaim4 claim 2.
.
The gallium nitride-based compound semiconductor light- emitting device according to clai4claim 2, wherein the positive electrode having the openings is in a lattice pattern or a comb-like pattern.
-2- AMENDMENT UNDER 37 C.F.R. § 1.111 Application No. 12/097,139 (Attorney Docket No. Q₉₂₁₇₁) 5. The gallium nitride-based compound semiconductor light-emitting device according to claim 4, wherein widths of bars of the lattice pattern or teeth of the comb- like pattern are from 1 pm to 50 pm.
The gallium nitride-based compound semiconductor light-emitting device according to claim 4, wherein a distance between bars of the lattice pattern or teeth of the comb-like pattern is from 1 pm to 50 g m.
The gallium nitride-based compound semiconductor light- emitting device according to claim4claim 2, wherein heights of upper ends of the roughened surface are from 0.1 to 2 p m from a surface at which the negative electrode is formed.
The gallium nitride-based compound semiconductor light-emitting device according to claim 8, wherein the heights of upper ends of the roughened surface are the same height as the surface of the p-type semiconductor layer.
-3- AMENDMENT UNDER 37 C.F.R. § 1.111 Application No. 12/097,139 (Attorney Docket No. Q₉₂₁₇₁) 11. The gallium nitride-based compound semiconductor light- emitting device according to claim4claim 2, wherein a density. of the protruding portions (particulates) of the roughened surface is from 1 x 1 05 pieces/mm2 to 1 x 108 pieces/mm2.
The gallium nitride-based compound semiconductor light- emitting device according to cahi4claim 2, wherein the roughened surface also exists at four sides of the light-emitting device.
A method for manufacturing a gallium nitridebased- nitride- based compound semiconductor light-emitting device, comprising the following steps (1) to (4) of: (1) stacking an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer which are formed of a gallium nitride-based compound semiconductor, in this order on a substrate; (2) forming a positive electrode having openings on the p-type semiconductor layer; (3) forming a mask formed of metal microparticles on the p-type semiconductor layer corresponding to the openings; and (4) performing dry etching onto the gallium nitride-based compound semiconductor from above the mask.
-4- AMENDMENT UNDER 37 C.F.R. § 1.111 Application No. 12/097,139 (Attorney Docket No. Q₉₂₁₇₁) 15. The method according to claim 14, wherein the step (3) comprises the step of forming a metal thin film on the p-type semiconductor layer and the step of a thermal treatment thereafter.
The method according to claim 14, wherein selected from the group consisting of Ni, Au, Sn, at least one kind of these metals.
A gallium nitride-based compound semiconductor method according to claim 14.
An electronic equipment incorporating the
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Description of a gallium nitride-based compound semiconductor light-emitting device with a positive electrode having openings (lattice or comb-like pattern) and a roughened p-type semiconductor layer surface at the openings. The roughened surface is derived from spherical particulates with semispherical apical protruding portions. Particulate diameters are 0.01–3 µm, heights 0.01–3 µm, density 1×10⁵–1×10⁸ pieces/mm². Heights of upper ends of roughened surface are 0.1–2.0 µm from the negative electrode surface. Roughening is achieved by forming metal microparticle mask and performing dry etching. The roughened region may also exist at four sides and between electrodes.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based compound semiconductor light-emitting device
Materials described outside the worked examples.
metal microparticles (Ni, Au, Sn, or alloy containing Ge)
metal (Ge or low melting point alloy containing Ge)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6. is a S EM photograph (at a magnificati o n of 20,000 times) of a cr o ss section of the r o ughened regi o ns after resi n- 35 packaging which will be …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
diameter of protruding portions (particulates) of roughened surface | 0.01–3 | gallium nitride-based compound semiconductor |
height of upper ends of roughened surface from negative electrode surface |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram schemat i ca l ly showing a c ross section of a gallium nitride-based compound semiconductor 25 light-emitting de v ice of the present …
FIG. 2 is a diagram sh o win g another example of a positive electrode ha v ing openings. FI G. 4 is a diagram showing yet a n othe r example of a positive …
FIG. 3) between the bars of the lattice or the teeth of t h e comb are preferably from 1 t o 50 p m, more preferably from 2 to 30 m, and still more preferably …
FIG. 4 may be exemplified. In cases of lattice pattern and comb-like pattern, 1 5 the widths (a in
FIG. 5 is a SE M photograph (at a magnification of 15, 0 00 times) of a surface of a roughened region of the gallium nitride-based compound semiconductor light- …
FIG. 6. is a S EM photograph (at a magnificati o n of 20,000 times) of a cr o ss section of the r o ughened regi o ns after resi n- 35 packaging which will be …
FIG. 7 is a TE M photograph o f a cross section of the light-emit tin g device f o ur-side portion of a conventional gallium nitride-based compound …
FIG. 9. 30 A stacked structure of the gallium nitride-based compound se m ico n ductor h a s been structured such that an n-type semiconductor layer 3 composed …
FIG. 25 2 and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
.
A gallium nitride-based compound semiconductor light- emitting device comprising a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconducto r layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n type semiconductor layer the n-ty p e semiconductor la y er, wherein the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surfaces whose apical portions are semispherical.
The gallium nitride-based compound semiconductor light- emitting device according to c -aiml claim 2, wherein diameters of protruding portions (particulates) of the roughened surface are from 0.01 to 3 pm.
The gallium nitride-based compound semiconductor light- emitting device according to e-aim4 claim 2, wherein heights of the protruding portions of the roughened surface are from 0.01 to 1 m.
(cur r ently amended) The gallium nitride-based compound semiconductor light- emitting device according to c -aim1 claim 2, wherein the roughened surface also exists between the positive electrode and the negative electrode.
A lamp comprising the gallium nitride-based according to Elaim4 claim 2.
.
The gallium nitride-based compound semiconductor light- emitting device according to clai4claim 2, wherein the positive electrode having the openings is in a lattice pattern or a comb-like pattern.
-2- AMENDMENT UNDER 37 C.F.R. § 1.111 Application No. 12/097,139 (Attorney Docket No. Q₉₂₁₇₁) 5. The gallium nitride-based compound semiconductor light-emitting device according to claim 4, wherein widths of bars of the lattice pattern or teeth of the comb- like pattern are from 1 pm to 50 pm.
The gallium nitride-based compound semiconductor light-emitting device according to claim 4, wherein a distance between bars of the lattice pattern or teeth of the comb-like pattern is from 1 pm to 50 g m.
The gallium nitride-based compound semiconductor light- emitting device according to claim4claim 2, wherein heights of upper ends of the roughened surface are from 0.1 to 2 p m from a surface at which the negative electrode is formed.
The gallium nitride-based compound semiconductor light-emitting device according to claim 8, wherein the heights of upper ends of the roughened surface are the same height as the surface of the p-type semiconductor layer.
-3- AMENDMENT UNDER 37 C.F.R. § 1.111 Application No. 12/097,139 (Attorney Docket No. Q₉₂₁₇₁) 11. The gallium nitride-based compound semiconductor light- emitting device according to claim4claim 2, wherein a density. of the protruding portions (particulates) of the roughened surface is from 1 x 1 05 pieces/mm2 to 1 x 108 pieces/mm2.
The gallium nitride-based compound semiconductor light- emitting device according to cahi4claim 2, wherein the roughened surface also exists at four sides of the light-emitting device.
A method for manufacturing a gallium nitridebased- nitride- based compound semiconductor light-emitting device, comprising the following steps (1) to (4) of: (1) stacking an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer which are formed of a gallium nitride-based compound semiconductor, in this order on a substrate; (2) forming a positive electrode having openings on the p-type semiconductor layer; (3) forming a mask formed of metal microparticles on the p-type semiconductor layer corresponding to the openings; and (4) performing dry etching onto the gallium nitride-based compound semiconductor from above the mask.
-4- AMENDMENT UNDER 37 C.F.R. § 1.111 Application No. 12/097,139 (Attorney Docket No. Q₉₂₁₇₁) 15. The method according to claim 14, wherein the step (3) comprises the step of forming a metal thin film on the p-type semiconductor layer and the step of a thermal treatment thereafter.
The method according to claim 14, wherein selected from the group consisting of Ni, Au, Sn, at least one kind of these metals.
A gallium nitride-based compound semiconductor method according to claim 14.
An electronic equipment incorporating the
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Description of a gallium nitride-based compound semiconductor light-emitting device with a positive electrode having openings (lattice or comb-like pattern) and a roughened p-type semiconductor layer surface at the openings. The roughened surface is derived from spherical particulates with semispherical apical protruding portions. Particulate diameters are 0.01–3 µm, heights 0.01–3 µm, density 1×10⁵–1×10⁸ pieces/mm². Heights of upper ends of roughened surface are 0.1–2.0 µm from the negative electrode surface. Roughening is achieved by forming metal microparticle mask and performing dry etching. The roughened region may also exist at four sides and between electrodes.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based compound semiconductor light-emitting device
Materials described outside the worked examples.
metal microparticles (Ni, Au, Sn, or alloy containing Ge)
metal (Ge or low melting point alloy containing Ge)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6. is a S EM photograph (at a magnificati o n of 20,000 times) of a cr o ss section of the r o ughened regi o ns after resi n- 35 packaging which will be …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
diameter of protruding portions (particulates) of roughened surface | 0.01–3 | gallium nitride-based compound semiconductor |
height of upper ends of roughened surface from negative electrode surface |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram schemat i ca l ly showing a c ross section of a gallium nitride-based compound semiconductor 25 light-emitting de v ice of the present …
FIG. 2 is a diagram sh o win g another example of a positive electrode ha v ing openings. FI G. 4 is a diagram showing yet a n othe r example of a positive …
FIG. 3) between the bars of the lattice or the teeth of t h e comb are preferably from 1 t o 50 p m, more preferably from 2 to 30 m, and still more preferably …
FIG. 4 may be exemplified. In cases of lattice pattern and comb-like pattern, 1 5 the widths (a in
FIG. 5 is a SE M photograph (at a magnification of 15, 0 00 times) of a surface of a roughened region of the gallium nitride-based compound semiconductor light- …
FIG. 6. is a S EM photograph (at a magnificati o n of 20,000 times) of a cr o ss section of the r o ughened regi o ns after resi n- 35 packaging which will be …
FIG. 7 is a TE M photograph o f a cross section of the light-emit tin g device f o ur-side portion of a conventional gallium nitride-based compound …
FIG. 9. 30 A stacked structure of the gallium nitride-based compound se m ico n ductor h a s been structured such that an n-type semiconductor layer 3 composed …
FIG. 25 2 and
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
.
A gallium nitride-based compound semiconductor light- emitting device comprising a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconducto r layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n type semiconductor layer the n-ty p e semiconductor la y er, wherein the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surfaces whose apical portions are semispherical.
The gallium nitride-based compound semiconductor light- emitting device according to c -aiml claim 2, wherein diameters of protruding portions (particulates) of the roughened surface are from 0.01 to 3 pm.
The gallium nitride-based compound semiconductor light- emitting device according to e-aim4 claim 2, wherein heights of the protruding portions of the roughened surface are from 0.01 to 1 m.
(cur r ently amended) The gallium nitride-based compound semiconductor light- emitting device according to c -aim1 claim 2, wherein the roughened surface also exists between the positive electrode and the negative electrode.
A lamp comprising the gallium nitride-based according to Elaim4 claim 2.
.
The gallium nitride-based compound semiconductor light- emitting device according to clai4claim 2, wherein the positive electrode having the openings is in a lattice pattern or a comb-like pattern.
-2- AMENDMENT UNDER 37 C.F.R. § 1.111 Application No. 12/097,139 (Attorney Docket No. Q₉₂₁₇₁) 5. The gallium nitride-based compound semiconductor light-emitting device according to claim 4, wherein widths of bars of the lattice pattern or teeth of the comb- like pattern are from 1 pm to 50 pm.
The gallium nitride-based compound semiconductor light-emitting device according to claim 4, wherein a distance between bars of the lattice pattern or teeth of the comb-like pattern is from 1 pm to 50 g m.
The gallium nitride-based compound semiconductor light- emitting device according to claim4claim 2, wherein heights of upper ends of the roughened surface are from 0.1 to 2 p m from a surface at which the negative electrode is formed.
The gallium nitride-based compound semiconductor light-emitting device according to claim 8, wherein the heights of upper ends of the roughened surface are the same height as the surface of the p-type semiconductor layer.
-3- AMENDMENT UNDER 37 C.F.R. § 1.111 Application No. 12/097,139 (Attorney Docket No. Q₉₂₁₇₁) 11. The gallium nitride-based compound semiconductor light- emitting device according to claim4claim 2, wherein a density. of the protruding portions (particulates) of the roughened surface is from 1 x 1 05 pieces/mm2 to 1 x 108 pieces/mm2.
The gallium nitride-based compound semiconductor light- emitting device according to cahi4claim 2, wherein the roughened surface also exists at four sides of the light-emitting device.
A method for manufacturing a gallium nitridebased- nitride- based compound semiconductor light-emitting device, comprising the following steps (1) to (4) of: (1) stacking an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer which are formed of a gallium nitride-based compound semiconductor, in this order on a substrate; (2) forming a positive electrode having openings on the p-type semiconductor layer; (3) forming a mask formed of metal microparticles on the p-type semiconductor layer corresponding to the openings; and (4) performing dry etching onto the gallium nitride-based compound semiconductor from above the mask.
-4- AMENDMENT UNDER 37 C.F.R. § 1.111 Application No. 12/097,139 (Attorney Docket No. Q₉₂₁₇₁) 15. The method according to claim 14, wherein the step (3) comprises the step of forming a metal thin film on the p-type semiconductor layer and the step of a thermal treatment thereafter.
The method according to claim 14, wherein selected from the group consisting of Ni, Au, Sn, at least one kind of these metals.
A gallium nitride-based compound semiconductor method according to claim 14.
An electronic equipment incorporating the
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Description of a gallium nitride-based compound semiconductor light-emitting device with a positive electrode having openings (lattice or comb-like pattern) and a roughened p-type semiconductor layer surface at the openings. The roughened surface is derived from spherical particulates with semispherical apical protruding portions. Particulate diameters are 0.01–3 µm, heights 0.01–3 µm, density 1×10⁵–1×10⁸ pieces/mm². Heights of upper ends of roughened surface are 0.1–2.0 µm from the negative electrode surface. Roughening is achieved by forming metal microparticle mask and performing dry etching. The roughened region may also exist at four sides and between electrodes.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride-based compound semiconductor light-emitting device
Materials described outside the worked examples.
metal microparticles (Ni, Au, Sn, or alloy containing Ge)
metal (Ge or low melting point alloy containing Ge)
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6. is a S EM photograph (at a magnificati o n of 20,000 times) of a cr o ss section of the r o ughened regi o ns after resi n- 35 packaging which will be …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
diameter of protruding portions (particulates) of roughened surface | 0.01–3 | gallium nitride-based compound semiconductor |
height of upper ends of roughened surface from negative electrode surface |
Related documents with shared materials, methods, properties, or citations.
FIG. 9. 30 A stacked structure of the gallium nitride-based compound se m ico n ductor h a s been structured such that an n-type semiconductor layer 3 composed …
gallium nitride-based compound semiconductor |
height of protruding portions of roughened surface | 0.01–3 | gallium nitride-based compound semiconductor |
density of protruding portions (particulates) of roughened surface | 100000–100000000 | gallium nitride-based compound semiconductor |
width of bars of lattice pattern or teeth of comb-like pattern | 1–50 | positive electrode material (Au, Ni, Co, Cu, Pd, Pt, Rh, Os, Ir, Ru, ITO, NiO, CoO) |
distance between bars of lattice pattern or teeth of comb-like pattern | 1–50 | positive electrode material (Au, Ni, Co, Cu, Pd, Pt, Rh, Os, Ir, Ru, ITO, NiO, CoO) |
thickness of positive electrode (general) | 10–1000 | positive electrode material (Au, Ni, Co, Cu, Pd, Pt, Rh, Os, Ir, Ru, ITO, NiO, CoO) |
thickness of ITO positive electrode | 100–300 | ITO (indium tin oxide) |
Thickness | 10–1000 nm | — |
Thickness | 100–1000 nm | — |
Pressure | 0.1–1 pa | — |
Temperature | 1000–1200 °C | — |
Pressure | 5–40 kPa | — |
Thickness | 2–6 nm | — |
FIG. 9. 30 A stacked structure of the gallium nitride-based compound se m ico n ductor h a s been structured such that an n-type semiconductor layer 3 composed …
gallium nitride-based compound semiconductor |
height of protruding portions of roughened surface | 0.01–3 | gallium nitride-based compound semiconductor |
density of protruding portions (particulates) of roughened surface | 100000–100000000 | gallium nitride-based compound semiconductor |
width of bars of lattice pattern or teeth of comb-like pattern | 1–50 | positive electrode material (Au, Ni, Co, Cu, Pd, Pt, Rh, Os, Ir, Ru, ITO, NiO, CoO) |
distance between bars of lattice pattern or teeth of comb-like pattern | 1–50 | positive electrode material (Au, Ni, Co, Cu, Pd, Pt, Rh, Os, Ir, Ru, ITO, NiO, CoO) |
thickness of positive electrode (general) | 10–1000 | positive electrode material (Au, Ni, Co, Cu, Pd, Pt, Rh, Os, Ir, Ru, ITO, NiO, CoO) |
thickness of ITO positive electrode | 100–300 | ITO (indium tin oxide) |
Thickness | 10–1000 nm | — |
Thickness | 100–1000 nm | — |
Pressure | 0.1–1 pa | — |
Temperature | 1000–1200 °C | — |
Pressure | 5–40 kPa | — |
Thickness | 2–6 nm | — |
FIG. 9. 30 A stacked structure of the gallium nitride-based compound se m ico n ductor h a s been structured such that an n-type semiconductor layer 3 composed …
gallium nitride-based compound semiconductor |
height of protruding portions of roughened surface | 0.01–3 | gallium nitride-based compound semiconductor |
density of protruding portions (particulates) of roughened surface | 100000–100000000 | gallium nitride-based compound semiconductor |
width of bars of lattice pattern or teeth of comb-like pattern | 1–50 | positive electrode material (Au, Ni, Co, Cu, Pd, Pt, Rh, Os, Ir, Ru, ITO, NiO, CoO) |
distance between bars of lattice pattern or teeth of comb-like pattern | 1–50 | positive electrode material (Au, Ni, Co, Cu, Pd, Pt, Rh, Os, Ir, Ru, ITO, NiO, CoO) |
thickness of positive electrode (general) | 10–1000 | positive electrode material (Au, Ni, Co, Cu, Pd, Pt, Rh, Os, Ir, Ru, ITO, NiO, CoO) |
thickness of ITO positive electrode | 100–300 | ITO (indium tin oxide) |
Thickness | 10–1000 nm | — |
Thickness | 100–1000 nm | — |
Pressure | 0.1–1 pa | — |
Temperature | 1000–1200 °C | — |
Pressure | 5–40 kPa | — |
Thickness | 2–6 nm | — |
FIG. 9. 30 A stacked structure of the gallium nitride-based compound se m ico n ductor h a s been structured such that an n-type semiconductor layer 3 composed …
gallium nitride-based compound semiconductor |
height of protruding portions of roughened surface | 0.01–3 | gallium nitride-based compound semiconductor |
density of protruding portions (particulates) of roughened surface | 100000–100000000 | gallium nitride-based compound semiconductor |
width of bars of lattice pattern or teeth of comb-like pattern | 1–50 | positive electrode material (Au, Ni, Co, Cu, Pd, Pt, Rh, Os, Ir, Ru, ITO, NiO, CoO) |
distance between bars of lattice pattern or teeth of comb-like pattern | 1–50 | positive electrode material (Au, Ni, Co, Cu, Pd, Pt, Rh, Os, Ir, Ru, ITO, NiO, CoO) |
thickness of positive electrode (general) | 10–1000 | positive electrode material (Au, Ni, Co, Cu, Pd, Pt, Rh, Os, Ir, Ru, ITO, NiO, CoO) |
thickness of ITO positive electrode | 100–300 | ITO (indium tin oxide) |
Thickness | 10–1000 nm | — |
Thickness | 100–1000 nm | — |
Pressure | 0.1–1 pa | — |
Temperature | 1000–1200 °C | — |
Pressure | 5–40 kPa | — |
Thickness | 2–6 nm | — |