A method for making a gallium nitride-based device comprising: providing a semiconductor substrate; and forming on the semiconductor substrate a succession of layers to provide a [type-I I] type II active region over the semiconductor substrate, comprising at least one InGaN layer and at least one GaNAs layer adjacent a GaN barrier layer.

A method for making an optoelectronic device, comprising: providing a GaN layer; forming a type II quantum well active region over the GaN layer, the type II quantum well active region comprising at least one InGaN layer and at least one GaNAs 4 In re Application of Lehigh University Application No. 12/398,448 Docket No. 355940.00051-D 1 layer adjacent a GaN barrier layer; and forming portions electrically coupled to the type II quantum well active region and adapted for exciting the active region.

A method for manufacturing a semiconductor device, comprising: providing a GaN layer; forming an active region over the GaN layer, the active region comprising a type II InGaN-GaNAs quantum well adjacent a GaN barrier layer; growing a layer over the active region while annealing the active region; and providing portions of the [ep eele-tenic-} semiconductor device electrically coupled to the active region and adapted for exciting the active region.

A method for making an [optoelectronic] optoelectronic device, comprising: providing a GaN layer; selecting an As content to provide a target emission wavelength for an opteoelectronic device active region, forming the optoelectronic type II quantum well active region over a GaN layer, the type II quantum well active region comprising at least one InGaN layer and at least one GaNAs layer adjacent a GaN barrier layer, wherein the GaNAs layer comprises the selected As content; and forming portions electrically coupled to the active region and adapted for exciting the active region.

A method for generating optical emission from an optoelectronic device, comprising providing a GaN layer; forming a type II quantum well active region over the GaN layer, the active region comprising a InGaN-GaNAs type II quantum well adjacent [a] t he GaN barrier layer; forming portions electrically coupled to the type II quantum well active region and adapted for exciting the active region; and exciting the active region to produce optical emission.

A method for making a gallium nitride-based device comprising: providing a semiconductor substrate; and forming on the semiconductor substrate a succession of layers to provide a [type-I I] type II active region over the semiconductor substrate, comprising at least one InGaN layer and at least one GaNAs layer adjacent a GaN barrier layer.

A method for making an optoelectronic device, comprising: providing a GaN layer; forming a type II quantum well active region over the GaN layer, the type II quantum well active region comprising at least one InGaN layer and at least one GaNAs 4 In re Application of Lehigh University Application No. 12/398,448 Docket No. 355940.00051-D 1 layer adjacent a GaN barrier layer; and forming portions electrically coupled to the type II quantum well active region and adapted for exciting the active region.

A method for manufacturing a semiconductor device, comprising: providing a GaN layer; forming an active region over the GaN layer, the active region comprising a type II InGaN-GaNAs quantum well adjacent a GaN barrier layer; growing a layer over the active region while annealing the active region; and providing portions of the [ep eele-tenic-} semiconductor device electrically coupled to the active region and adapted for exciting the active region.

A method for making an [optoelectronic] optoelectronic device, comprising: providing a GaN layer; selecting an As content to provide a target emission wavelength for an opteoelectronic device active region, forming the optoelectronic type II quantum well active region over a GaN layer, the type II quantum well active region comprising at least one InGaN layer and at least one GaNAs layer adjacent a GaN barrier layer, wherein the GaNAs layer comprises the selected As content; and forming portions electrically coupled to the active region and adapted for exciting the active region.

A method for generating optical emission from an optoelectronic device, comprising providing a GaN layer; forming a type II quantum well active region over the GaN layer, the active region comprising a InGaN-GaNAs type II quantum well adjacent [a] t he GaN barrier layer; forming portions electrically coupled to the type II quantum well active region and adapted for exciting the active region; and exciting the active region to produce optical emission.

A method for making a gallium nitride-based device comprising: providing a semiconductor substrate; and forming on the semiconductor substrate a succession of layers to provide a [type-I I] type II active region over the semiconductor substrate, comprising at least one InGaN layer and at least one GaNAs layer adjacent a GaN barrier layer.

A method for making an optoelectronic device, comprising: providing a GaN layer; forming a type II quantum well active region over the GaN layer, the type II quantum well active region comprising at least one InGaN layer and at least one GaNAs 4 In re Application of Lehigh University Application No. 12/398,448 Docket No. 355940.00051-D 1 layer adjacent a GaN barrier layer; and forming portions electrically coupled to the type II quantum well active region and adapted for exciting the active region.

A method for manufacturing a semiconductor device, comprising: providing a GaN layer; forming an active region over the GaN layer, the active region comprising a type II InGaN-GaNAs quantum well adjacent a GaN barrier layer; growing a layer over the active region while annealing the active region; and providing portions of the [ep eele-tenic-} semiconductor device electrically coupled to the active region and adapted for exciting the active region.

A method for making an [optoelectronic] optoelectronic device, comprising: providing a GaN layer; selecting an As content to provide a target emission wavelength for an opteoelectronic device active region, forming the optoelectronic type II quantum well active region over a GaN layer, the type II quantum well active region comprising at least one InGaN layer and at least one GaNAs layer adjacent a GaN barrier layer, wherein the GaNAs layer comprises the selected As content; and forming portions electrically coupled to the active region and adapted for exciting the active region.

A method for generating optical emission from an optoelectronic device, comprising providing a GaN layer; forming a type II quantum well active region over the GaN layer, the active region comprising a InGaN-GaNAs type II quantum well adjacent [a] t he GaN barrier layer; forming portions electrically coupled to the type II quantum well active region and adapted for exciting the active region; and exciting the active region to produce optical emission.

A method for making a gallium nitride-based device comprising: providing a semiconductor substrate; and forming on the semiconductor substrate a succession of layers to provide a [type-I I] type II active region over the semiconductor substrate, comprising at least one InGaN layer and at least one GaNAs layer adjacent a GaN barrier layer.

A method for making an optoelectronic device, comprising: providing a GaN layer; forming a type II quantum well active region over the GaN layer, the type II quantum well active region comprising at least one InGaN layer and at least one GaNAs 4 In re Application of Lehigh University Application No. 12/398,448 Docket No. 355940.00051-D 1 layer adjacent a GaN barrier layer; and forming portions electrically coupled to the type II quantum well active region and adapted for exciting the active region.

A method for manufacturing a semiconductor device, comprising: providing a GaN layer; forming an active region over the GaN layer, the active region comprising a type II InGaN-GaNAs quantum well adjacent a GaN barrier layer; growing a layer over the active region while annealing the active region; and providing portions of the [ep eele-tenic-} semiconductor device electrically coupled to the active region and adapted for exciting the active region.

A method for making an [optoelectronic] optoelectronic device, comprising: providing a GaN layer; selecting an As content to provide a target emission wavelength for an opteoelectronic device active region, forming the optoelectronic type II quantum well active region over a GaN layer, the type II quantum well active region comprising at least one InGaN layer and at least one GaNAs layer adjacent a GaN barrier layer, wherein the GaNAs layer comprises the selected As content; and forming portions electrically coupled to the active region and adapted for exciting the active region.

A method for generating optical emission from an optoelectronic device, comprising providing a GaN layer; forming a type II quantum well active region over the GaN layer, the active region comprising a InGaN-GaNAs type II quantum well adjacent [a] t he GaN barrier layer; forming portions electrically coupled to the type II quantum well active region and adapted for exciting the active region; and exciting the active region to produce optical emission.