Patent
US 9,337,278Gallium Nitride on High Thermal Conductivity Material Device and Method
Xing Gu, Jinqiao Xie, Edward A. Beam, III, Deep Dumka et al.
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,337,278Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor component comprising: a barrier layer; a gallium nitride (GaN) channel layer having a Ga-face coupled with the barrier layer; and a thermoconductive layer within 1000 nanometers of the Ga-face of the GaN channel layer, wherein the rm oconductive layer has a thermal conductivity value of at least 500 W/(m-K) and is closer to an N-face of the GaN channel layer than to the Ga-face of the GaN channel layer.
The semiconductor component of claim 1, further comprising: a dielectric layer between the GaN channel layer and the thermoconductive layer.
The semiconductor component of claim 1, further comprising: a thermoconductive ca rri er mounting layer coupled with the rm oconductive layer, wherein the rm oconductive carrier mounting layer has a the rm al conductivity value of at least 500 W/(m-K).
The semiconductor component of claim 1, further comprising: a GaN cap layer, wherein the GaN cap layer is coupled with the ba rri er layer.
The semiconductor component of claim 1, wherein the thermoconductive layer is within 500 nanometers of the Ga-face of the GaN channel layer.
A method of fabricating a semiconductor component comprising: forming an N-face barrier layer; forming an N-face gallium nitride (GaN) channel layer on the N-face barrier layer; and forming a thermoconductive layer within 1000 nanometers of the N-face GaN channel layer, wherein the thermoconductive layer has a thermal conductivity of at least 500 W/(m-K).
The method of claim 11, further comprising before forming the N-face barrier layer, forming an N-face GaN cap layer, wherein the N-face barrier layer is formed on the N-face GaN cap layer.
A semiconductor component prepared by a process method of fabricating a semiconductor component comprising: forming an N-face barrier layer; forming an N-face gallium nitride (GaN) channel layer on the N-face barrier layer; and forming a thermoconductive layer within 1000 nanometers of the N-face GaN channel layer, wherein the thermoconductive layer has a thermal conductivity of at least 500 W/(m-K).
The method of fabricating a semiconductor component of claim 24 wherein the process further comprises comprising: providing a substrate; forming an N-face nucleation layer on the substrate; forming an N-face buffer layer on the N-face nucleation layer; forming an N-face GaN cap layer above the N-face buffer layer, wherein the N-face barrier layer is formed on the N-face GaN cap layer; removing the substrate, N-face nucleation layer, and N-face buffer layer to expose a Ga- face of the N-face GaN cap layer; and forming an activation layer on the Ga-face of the N-face GaN cap layer, the activation layer including a gate, a source, and a drain.
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT semiconductor component (Ga-face wafer stack)
Materials described outside the worked examples.
gallium nitride
GaN
barrier layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermoconductive layer minimum thermal conductivity | 500 W/(m-K) | thermoconductive layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,337,278Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor component comprising: a barrier layer; a gallium nitride (GaN) channel layer having a Ga-face coupled with the barrier layer; and a thermoconductive layer within 1000 nanometers of the Ga-face of the GaN channel layer, wherein the rm oconductive layer has a thermal conductivity value of at least 500 W/(m-K) and is closer to an N-face of the GaN channel layer than to the Ga-face of the GaN channel layer.
The semiconductor component of claim 1, further comprising: a dielectric layer between the GaN channel layer and the thermoconductive layer.
The semiconductor component of claim 1, further comprising: a thermoconductive ca rri er mounting layer coupled with the rm oconductive layer, wherein the rm oconductive carrier mounting layer has a the rm al conductivity value of at least 500 W/(m-K).
The semiconductor component of claim 1, further comprising: a GaN cap layer, wherein the GaN cap layer is coupled with the ba rri er layer.
The semiconductor component of claim 1, wherein the thermoconductive layer is within 500 nanometers of the Ga-face of the GaN channel layer.
A method of fabricating a semiconductor component comprising: forming an N-face barrier layer; forming an N-face gallium nitride (GaN) channel layer on the N-face barrier layer; and forming a thermoconductive layer within 1000 nanometers of the N-face GaN channel layer, wherein the thermoconductive layer has a thermal conductivity of at least 500 W/(m-K).
The method of claim 11, further comprising before forming the N-face barrier layer, forming an N-face GaN cap layer, wherein the N-face barrier layer is formed on the N-face GaN cap layer.
A semiconductor component prepared by a process method of fabricating a semiconductor component comprising: forming an N-face barrier layer; forming an N-face gallium nitride (GaN) channel layer on the N-face barrier layer; and forming a thermoconductive layer within 1000 nanometers of the N-face GaN channel layer, wherein the thermoconductive layer has a thermal conductivity of at least 500 W/(m-K).
The method of fabricating a semiconductor component of claim 24 wherein the process further comprises comprising: providing a substrate; forming an N-face nucleation layer on the substrate; forming an N-face buffer layer on the N-face nucleation layer; forming an N-face GaN cap layer above the N-face buffer layer, wherein the N-face barrier layer is formed on the N-face GaN cap layer; removing the substrate, N-face nucleation layer, and N-face buffer layer to expose a Ga- face of the N-face GaN cap layer; and forming an activation layer on the Ga-face of the N-face GaN cap layer, the activation layer including a gate, a source, and a drain.
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT semiconductor component (Ga-face wafer stack)
Materials described outside the worked examples.
gallium nitride
GaN
barrier layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermoconductive layer minimum thermal conductivity | 500 W/(m-K) | thermoconductive layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,337,278Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor component comprising: a barrier layer; a gallium nitride (GaN) channel layer having a Ga-face coupled with the barrier layer; and a thermoconductive layer within 1000 nanometers of the Ga-face of the GaN channel layer, wherein the rm oconductive layer has a thermal conductivity value of at least 500 W/(m-K) and is closer to an N-face of the GaN channel layer than to the Ga-face of the GaN channel layer.
The semiconductor component of claim 1, further comprising: a dielectric layer between the GaN channel layer and the thermoconductive layer.
The semiconductor component of claim 1, further comprising: a thermoconductive ca rri er mounting layer coupled with the rm oconductive layer, wherein the rm oconductive carrier mounting layer has a the rm al conductivity value of at least 500 W/(m-K).
The semiconductor component of claim 1, further comprising: a GaN cap layer, wherein the GaN cap layer is coupled with the ba rri er layer.
The semiconductor component of claim 1, wherein the thermoconductive layer is within 500 nanometers of the Ga-face of the GaN channel layer.
A method of fabricating a semiconductor component comprising: forming an N-face barrier layer; forming an N-face gallium nitride (GaN) channel layer on the N-face barrier layer; and forming a thermoconductive layer within 1000 nanometers of the N-face GaN channel layer, wherein the thermoconductive layer has a thermal conductivity of at least 500 W/(m-K).
The method of claim 11, further comprising before forming the N-face barrier layer, forming an N-face GaN cap layer, wherein the N-face barrier layer is formed on the N-face GaN cap layer.
A semiconductor component prepared by a process method of fabricating a semiconductor component comprising: forming an N-face barrier layer; forming an N-face gallium nitride (GaN) channel layer on the N-face barrier layer; and forming a thermoconductive layer within 1000 nanometers of the N-face GaN channel layer, wherein the thermoconductive layer has a thermal conductivity of at least 500 W/(m-K).
The method of fabricating a semiconductor component of claim 24 wherein the process further comprises comprising: providing a substrate; forming an N-face nucleation layer on the substrate; forming an N-face buffer layer on the N-face nucleation layer; forming an N-face GaN cap layer above the N-face buffer layer, wherein the N-face barrier layer is formed on the N-face GaN cap layer; removing the substrate, N-face nucleation layer, and N-face buffer layer to expose a Ga- face of the N-face GaN cap layer; and forming an activation layer on the Ga-face of the N-face GaN cap layer, the activation layer including a gate, a source, and a drain.
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT semiconductor component (Ga-face wafer stack)
Materials described outside the worked examples.
gallium nitride
GaN
barrier layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermoconductive layer minimum thermal conductivity | 500 W/(m-K) | thermoconductive layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,337,278Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor component comprising: a barrier layer; a gallium nitride (GaN) channel layer having a Ga-face coupled with the barrier layer; and a thermoconductive layer within 1000 nanometers of the Ga-face of the GaN channel layer, wherein the rm oconductive layer has a thermal conductivity value of at least 500 W/(m-K) and is closer to an N-face of the GaN channel layer than to the Ga-face of the GaN channel layer.
The semiconductor component of claim 1, further comprising: a dielectric layer between the GaN channel layer and the thermoconductive layer.
The semiconductor component of claim 1, further comprising: a thermoconductive ca rri er mounting layer coupled with the rm oconductive layer, wherein the rm oconductive carrier mounting layer has a the rm al conductivity value of at least 500 W/(m-K).
The semiconductor component of claim 1, further comprising: a GaN cap layer, wherein the GaN cap layer is coupled with the ba rri er layer.
The semiconductor component of claim 1, wherein the thermoconductive layer is within 500 nanometers of the Ga-face of the GaN channel layer.
A method of fabricating a semiconductor component comprising: forming an N-face barrier layer; forming an N-face gallium nitride (GaN) channel layer on the N-face barrier layer; and forming a thermoconductive layer within 1000 nanometers of the N-face GaN channel layer, wherein the thermoconductive layer has a thermal conductivity of at least 500 W/(m-K).
The method of claim 11, further comprising before forming the N-face barrier layer, forming an N-face GaN cap layer, wherein the N-face barrier layer is formed on the N-face GaN cap layer.
A semiconductor component prepared by a process method of fabricating a semiconductor component comprising: forming an N-face barrier layer; forming an N-face gallium nitride (GaN) channel layer on the N-face barrier layer; and forming a thermoconductive layer within 1000 nanometers of the N-face GaN channel layer, wherein the thermoconductive layer has a thermal conductivity of at least 500 W/(m-K).
The method of fabricating a semiconductor component of claim 24 wherein the process further comprises comprising: providing a substrate; forming an N-face nucleation layer on the substrate; forming an N-face buffer layer on the N-face nucleation layer; forming an N-face GaN cap layer above the N-face buffer layer, wherein the N-face barrier layer is formed on the N-face GaN cap layer; removing the substrate, N-face nucleation layer, and N-face buffer layer to expose a Ga- face of the N-face GaN cap layer; and forming an activation layer on the Ga-face of the N-face GaN cap layer, the activation layer including a gate, a source, and a drain.
Layer stacks claimed or described, ordered top of device to substrate.
GaN HEMT semiconductor component (Ga-face wafer stack)
Materials described outside the worked examples.
gallium nitride
GaN
barrier layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermoconductive layer minimum thermal conductivity | 500 W/(m-K) | thermoconductive layer |
Related documents with shared materials, methods, properties, or citations.
GaN HEMT semiconductor component (N-face wafer stack)
thermoconductive layer
dielectric layer
thermoconductive carrier mounting layer
diamond
C
boron nitride
BN
graphene
graphite
cubic boron arsenide
BAs
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
indium aluminum nitride
InAlN
silicon nitride
SiN
thermoconductive carrier mounting layer minimum thermal conductivity |
| 500 W/(m-K) |
thermoconductive carrier mounting layer |
distance of thermoconductive layer from 2DEG region | 5–1000 nm | thermoconductive layer |
— | ≥ 500 W | — |
Thickness | 10–100 nm | — |
GaN HEMT semiconductor component (N-face wafer stack)
thermoconductive layer
dielectric layer
thermoconductive carrier mounting layer
diamond
C
boron nitride
BN
graphene
graphite
cubic boron arsenide
BAs
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
indium aluminum nitride
InAlN
silicon nitride
SiN
thermoconductive carrier mounting layer minimum thermal conductivity |
| 500 W/(m-K) |
thermoconductive carrier mounting layer |
distance of thermoconductive layer from 2DEG region | 5–1000 nm | thermoconductive layer |
— | ≥ 500 W | — |
Thickness | 10–100 nm | — |
GaN HEMT semiconductor component (N-face wafer stack)
thermoconductive layer
dielectric layer
thermoconductive carrier mounting layer
diamond
C
boron nitride
BN
graphene
graphite
cubic boron arsenide
BAs
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
indium aluminum nitride
InAlN
silicon nitride
SiN
thermoconductive carrier mounting layer minimum thermal conductivity |
| 500 W/(m-K) |
thermoconductive carrier mounting layer |
distance of thermoconductive layer from 2DEG region | 5–1000 nm | thermoconductive layer |
— | ≥ 500 W | — |
Thickness | 10–100 nm | — |
GaN HEMT semiconductor component (N-face wafer stack)
thermoconductive layer
dielectric layer
thermoconductive carrier mounting layer
diamond
C
boron nitride
BN
graphene
graphite
cubic boron arsenide
BAs
aluminum nitride
AlN
aluminum gallium nitride
AlGaN
indium aluminum nitride
InAlN
silicon nitride
SiN
thermoconductive carrier mounting layer minimum thermal conductivity |
| 500 W/(m-K) |
thermoconductive carrier mounting layer |
distance of thermoconductive layer from 2DEG region | 5–1000 nm | thermoconductive layer |
— | ≥ 500 W | — |
Thickness | 10–100 nm | — |