Patent
US 12,351,455 B2GALLIUM NITRIDE PARTICLES AND METHOD FOR PRODUCING SAME
Masami Mesuda, Hideto Kuramochi, Shinichi Hara
TOSOH CORPORATION, Yamaguchi (JP)·Jul. 8, 2025·US
Copyright © 2026 Matter42. All rights reserved.
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US 12,351,455 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The length of time for the deposition process is preferably 3 hours or longer and more preferably 6 hours or longer. If the length of time is shorter, …
FIG. 2 One example of a device for producing gallium nitride particles of the present invention. DESCRIPTION OF EMBODIMENTS 25 Although the present invention …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Gallium nitride particles characterized in that an oxy-gen content is 0.5 at % or less, and a total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is less than 10 wtppm, and an Si impurity amount is less than 1 wtppm.
The gallium nitride particles according to claim 1, characterized in that a total impurity amount of Mg and Si is less than 5 wtppm.
The gallium nitride particles according to claim 1, characterized in that the oxygen content is 0.1 at % or less. Comparative 2 Example 3 <0.01 <0.005 <0.005 0.22 0.12 <0.005 <0.005 <0.005 <0.005 17.34
A method for producing the gallium nitride particles according to claim 1, the method comprising: performing a nitriding process using gallium oxide as a starting material; and then performing a deposition process that involves introducing a transport ammonia gas heated to a temperature of 1150° C. or higher and 1300° C. or lower to the nitrided gallium oxide heated to 1150° C. or higher and 1300° C. or lower and depositing the vaporized gallium nitride by intro-ducing a deposition ammonia gas heated to 900° C. or higher and 1100° C. or lower.
A sintered body comprising the gallium nitride particles according to claim 1.
The gallium nitride particles according to claim 1, characterized in that the total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is 0.238 wtppm or more.
The gallium nitride particles according to claim 1, characterized in that the Si impurity amount is 0.08 wtppm or more.
Gallium nitride particles characterized in that an oxygen content is 0.5 at % or less, wherein the gallium nitride particles comprise an Si impurity, and an Si impurity amount is less than 1 wtppm. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A tube furnace was used. 40 g of gallium oxide powder (5N acicular) was placed in an alumina container and subjected to a nitriding process at 1050°C for 18 hours in ammonia gas (1000 mL/min, ammonia gas/gallium molar ratio=103.5). After cooling below 200°C, a deposition process was conducted by introducing transport ammonia gas at 1000 mL/min, heating the nitrided gallium oxide to 1150°C to vaporize gallium nitride, and introducing a deposition ammonia gas heated to 1000°C to deposit the vaporized gallium nitride.
Layer stacks claimed or described, ordered top of device to substrate.
sintered body
sputtering target
thin film
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,351,455 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The length of time for the deposition process is preferably 3 hours or longer and more preferably 6 hours or longer. If the length of time is shorter, …
FIG. 2 One example of a device for producing gallium nitride particles of the present invention. DESCRIPTION OF EMBODIMENTS 25 Although the present invention …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Gallium nitride particles characterized in that an oxy-gen content is 0.5 at % or less, and a total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is less than 10 wtppm, and an Si impurity amount is less than 1 wtppm.
The gallium nitride particles according to claim 1, characterized in that a total impurity amount of Mg and Si is less than 5 wtppm.
The gallium nitride particles according to claim 1, characterized in that the oxygen content is 0.1 at % or less. Comparative 2 Example 3 <0.01 <0.005 <0.005 0.22 0.12 <0.005 <0.005 <0.005 <0.005 17.34
A method for producing the gallium nitride particles according to claim 1, the method comprising: performing a nitriding process using gallium oxide as a starting material; and then performing a deposition process that involves introducing a transport ammonia gas heated to a temperature of 1150° C. or higher and 1300° C. or lower to the nitrided gallium oxide heated to 1150° C. or higher and 1300° C. or lower and depositing the vaporized gallium nitride by intro-ducing a deposition ammonia gas heated to 900° C. or higher and 1100° C. or lower.
A sintered body comprising the gallium nitride particles according to claim 1.
The gallium nitride particles according to claim 1, characterized in that the total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is 0.238 wtppm or more.
The gallium nitride particles according to claim 1, characterized in that the Si impurity amount is 0.08 wtppm or more.
Gallium nitride particles characterized in that an oxygen content is 0.5 at % or less, wherein the gallium nitride particles comprise an Si impurity, and an Si impurity amount is less than 1 wtppm. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A tube furnace was used. 40 g of gallium oxide powder (5N acicular) was placed in an alumina container and subjected to a nitriding process at 1050°C for 18 hours in ammonia gas (1000 mL/min, ammonia gas/gallium molar ratio=103.5). After cooling below 200°C, a deposition process was conducted by introducing transport ammonia gas at 1000 mL/min, heating the nitrided gallium oxide to 1150°C to vaporize gallium nitride, and introducing a deposition ammonia gas heated to 1000°C to deposit the vaporized gallium nitride.
Layer stacks claimed or described, ordered top of device to substrate.
sintered body
sputtering target
thin film
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,351,455 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The length of time for the deposition process is preferably 3 hours or longer and more preferably 6 hours or longer. If the length of time is shorter, …
FIG. 2 One example of a device for producing gallium nitride particles of the present invention. DESCRIPTION OF EMBODIMENTS 25 Although the present invention …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Gallium nitride particles characterized in that an oxy-gen content is 0.5 at % or less, and a total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is less than 10 wtppm, and an Si impurity amount is less than 1 wtppm.
The gallium nitride particles according to claim 1, characterized in that a total impurity amount of Mg and Si is less than 5 wtppm.
The gallium nitride particles according to claim 1, characterized in that the oxygen content is 0.1 at % or less. Comparative 2 Example 3 <0.01 <0.005 <0.005 0.22 0.12 <0.005 <0.005 <0.005 <0.005 17.34
A method for producing the gallium nitride particles according to claim 1, the method comprising: performing a nitriding process using gallium oxide as a starting material; and then performing a deposition process that involves introducing a transport ammonia gas heated to a temperature of 1150° C. or higher and 1300° C. or lower to the nitrided gallium oxide heated to 1150° C. or higher and 1300° C. or lower and depositing the vaporized gallium nitride by intro-ducing a deposition ammonia gas heated to 900° C. or higher and 1100° C. or lower.
A sintered body comprising the gallium nitride particles according to claim 1.
The gallium nitride particles according to claim 1, characterized in that the total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is 0.238 wtppm or more.
The gallium nitride particles according to claim 1, characterized in that the Si impurity amount is 0.08 wtppm or more.
Gallium nitride particles characterized in that an oxygen content is 0.5 at % or less, wherein the gallium nitride particles comprise an Si impurity, and an Si impurity amount is less than 1 wtppm. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A tube furnace was used. 40 g of gallium oxide powder (5N acicular) was placed in an alumina container and subjected to a nitriding process at 1050°C for 18 hours in ammonia gas (1000 mL/min, ammonia gas/gallium molar ratio=103.5). After cooling below 200°C, a deposition process was conducted by introducing transport ammonia gas at 1000 mL/min, heating the nitrided gallium oxide to 1150°C to vaporize gallium nitride, and introducing a deposition ammonia gas heated to 1000°C to deposit the vaporized gallium nitride.
Layer stacks claimed or described, ordered top of device to substrate.
sintered body
sputtering target
thin film
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,351,455 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. The length of time for the deposition process is preferably 3 hours or longer and more preferably 6 hours or longer. If the length of time is shorter, …
FIG. 2 One example of a device for producing gallium nitride particles of the present invention. DESCRIPTION OF EMBODIMENTS 25 Although the present invention …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Gallium nitride particles characterized in that an oxy-gen content is 0.5 at % or less, and a total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is less than 10 wtppm, and an Si impurity amount is less than 1 wtppm.
The gallium nitride particles according to claim 1, characterized in that a total impurity amount of Mg and Si is less than 5 wtppm.
The gallium nitride particles according to claim 1, characterized in that the oxygen content is 0.1 at % or less. Comparative 2 Example 3 <0.01 <0.005 <0.005 0.22 0.12 <0.005 <0.005 <0.005 <0.005 17.34
A method for producing the gallium nitride particles according to claim 1, the method comprising: performing a nitriding process using gallium oxide as a starting material; and then performing a deposition process that involves introducing a transport ammonia gas heated to a temperature of 1150° C. or higher and 1300° C. or lower to the nitrided gallium oxide heated to 1150° C. or higher and 1300° C. or lower and depositing the vaporized gallium nitride by intro-ducing a deposition ammonia gas heated to 900° C. or higher and 1100° C. or lower.
A sintered body comprising the gallium nitride particles according to claim 1.
The gallium nitride particles according to claim 1, characterized in that the total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is 0.238 wtppm or more.
The gallium nitride particles according to claim 1, characterized in that the Si impurity amount is 0.08 wtppm or more.
Gallium nitride particles characterized in that an oxygen content is 0.5 at % or less, wherein the gallium nitride particles comprise an Si impurity, and an Si impurity amount is less than 1 wtppm. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A tube furnace was used. 40 g of gallium oxide powder (5N acicular) was placed in an alumina container and subjected to a nitriding process at 1050°C for 18 hours in ammonia gas (1000 mL/min, ammonia gas/gallium molar ratio=103.5). After cooling below 200°C, a deposition process was conducted by introducing transport ammonia gas at 1000 mL/min, heating the nitrided gallium oxide to 1150°C to vaporize gallium nitride, and introducing a deposition ammonia gas heated to 1000°C to deposit the vaporized gallium nitride.
Layer stacks claimed or described, ordered top of device to substrate.
sintered body
sputtering target
thin film
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 µm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
| 5–10 µm |
| — |
Thickness | ≤ 5 µm | — |
Cited non-patent literature · 3
| 5–10 µm |
| — |
Thickness | ≤ 5 µm | — |
Cited non-patent literature · 3
| 5–10 µm |
| — |
Thickness | ≤ 5 µm | — |
Cited non-patent literature · 3
| 5–10 µm |
| — |
Thickness | ≤ 5 µm | — |
Cited non-patent literature · 3