Patent
US 11,591,715GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
Hideo FUJISAWA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,591,715Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B illustrates a shape which a GaN single crystal according to an embodiment may have, with
FIGS. 2A, 2B, and 2C are perspective views illustrating shapes which a GaN single crystal according to an embodiment may have.
FIG. 3 is a plan view illustrating a GaN single crystal according to an embodiment.
FIG. 4 is an optical microscopic image of etch pits corresponding to various dislocations.
FIG. 5 illustrates an arrangement of an X-ray source, a test piece and a detector in transmission X- ray topography by the Lang Method.
FIG. 6 is a plan view illustrating a GaN single crystal.
FIG. 7A.
FIG. 8 is a plan view illustrating a pattern mask of a stripe type.
FIG. 9 is a plan view illustrating a pattern mask of a rhomboid grid type.
FIG. 10 is a plan view illustrating a pattern mask of a hexagonal grid type.
FIGS. 11 A, 11B, 11C, 11 D, and 11 E are cross-sectional views illustrating growth of a GaN crystal on a nitrogen polar surface of GaN of a seed.
FIG. 12 illustrates a crystal growth apparatus that may be used for growing a GaN crystal by an ammonothermal method.
FIG. 13 is a photograph illustrating an appearance of a C- plane GaN wafer.
FIG. 14 is an optical microscopic image of a gallium polar surface of a C-plane GaN wafer etched for one hour with 89% sulfuric acid heated to 270 0 C.
FIG. 15 is a transmission X-ray topography image of a C- plane GaN wafer.
FIG. 16 is a plan view of a C-plane GaN wafer for illustrating measurement directions of XRC- FWHMs.
FIG. 17 is a plan view of a C-plane GaN wafer for illustrating measurement directions of XRC- FWHMs.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN single crystal comprising a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 mx 100 m square, etch pit-free areas account for 80 % or more of the plurality of sub-areas, said etch pit-free areas being areas where EPD is 0 cm⁻², and wherein an average value of EPDs across the plurality of sub-areas is less than 1x10 4 cm -2 Previously presented
The GaN single crystal according to claim 1, wherein the etch pit-free areas account for 85 % or more of the plurality of sub-areas. Previously presented
The GaN single crystal according to claim 1, wherein the etch pit-free areas account for 90 % or more of the plurality of sub-areas. Previously presented
The GaN single crystal according to claim 1, wherein in a sub-area having a highest EPD among the plurality of sub-areas, the EPD is less than 1x 10 6 cm -2. Previously presented
The GaN single crystal according to claim 1, wherein at least one square etch pit-free area of 1.3 mmx 1.3 mm is found on the gallium polar surface. Previously presented
The GaN single crystal according to claim 1, wherein each of the gallium polar surface and the nitrogen polar surface has a size encompassing a 10 mmx10 mm square, and an anomalous transmission image of a square area of 10 mm x 10 mm is obtainable from the crystal by X-ray topography. Previously presented
Canceled
A GaN single crystal having a comprising polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein at least one square etch pit-free area of 1.3 mm x 1.3 mm is found on the gallium polar surface, said square etch pit-free area being an area where EPD is 0 cm⁻², and wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 mx 100 p m square, an average value of EPDs across the plurality of subareas is less than 1 x104 cm⁻² Currently amended
Materials described outside the worked examples.
GaN single crystal
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Average EPD across sub-areas (claim 1 upper bound) | ≤ 10000 cm⁻² | GaN |
Fraction of etch pit-free sub-areas (EPD=0 cm^-2) (claim 1 lower bound) | ≥ 80 % |
Table 1
SVG 17223073.04-15-2021.KNJ₇A₉VTDFLYX11.SPEC.86.19.370.1939.2182.2918.svg
The measured values of XRC-FWHM at all measurement points are listed in Table 1 below.
p. 43
Table 2
SVG 17223073.04-15-2021.KNJ₇A₉VTDFLYX11.SPEC.87.28.303.2406.2115.2943.svg
The measured values of XRC-FWHM at all the measurement points are listed in Table 2 below.
p. 44
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,591,715Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B illustrates a shape which a GaN single crystal according to an embodiment may have, with
FIGS. 2A, 2B, and 2C are perspective views illustrating shapes which a GaN single crystal according to an embodiment may have.
FIG. 3 is a plan view illustrating a GaN single crystal according to an embodiment.
FIG. 4 is an optical microscopic image of etch pits corresponding to various dislocations.
FIG. 5 illustrates an arrangement of an X-ray source, a test piece and a detector in transmission X- ray topography by the Lang Method.
FIG. 6 is a plan view illustrating a GaN single crystal.
FIG. 7A.
FIG. 8 is a plan view illustrating a pattern mask of a stripe type.
FIG. 9 is a plan view illustrating a pattern mask of a rhomboid grid type.
FIG. 10 is a plan view illustrating a pattern mask of a hexagonal grid type.
FIGS. 11 A, 11B, 11C, 11 D, and 11 E are cross-sectional views illustrating growth of a GaN crystal on a nitrogen polar surface of GaN of a seed.
FIG. 12 illustrates a crystal growth apparatus that may be used for growing a GaN crystal by an ammonothermal method.
FIG. 13 is a photograph illustrating an appearance of a C- plane GaN wafer.
FIG. 14 is an optical microscopic image of a gallium polar surface of a C-plane GaN wafer etched for one hour with 89% sulfuric acid heated to 270 0 C.
FIG. 15 is a transmission X-ray topography image of a C- plane GaN wafer.
FIG. 16 is a plan view of a C-plane GaN wafer for illustrating measurement directions of XRC- FWHMs.
FIG. 17 is a plan view of a C-plane GaN wafer for illustrating measurement directions of XRC- FWHMs.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN single crystal comprising a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 mx 100 m square, etch pit-free areas account for 80 % or more of the plurality of sub-areas, said etch pit-free areas being areas where EPD is 0 cm⁻², and wherein an average value of EPDs across the plurality of sub-areas is less than 1x10 4 cm -2 Previously presented
The GaN single crystal according to claim 1, wherein the etch pit-free areas account for 85 % or more of the plurality of sub-areas. Previously presented
The GaN single crystal according to claim 1, wherein the etch pit-free areas account for 90 % or more of the plurality of sub-areas. Previously presented
The GaN single crystal according to claim 1, wherein in a sub-area having a highest EPD among the plurality of sub-areas, the EPD is less than 1x 10 6 cm -2. Previously presented
The GaN single crystal according to claim 1, wherein at least one square etch pit-free area of 1.3 mmx 1.3 mm is found on the gallium polar surface. Previously presented
The GaN single crystal according to claim 1, wherein each of the gallium polar surface and the nitrogen polar surface has a size encompassing a 10 mmx10 mm square, and an anomalous transmission image of a square area of 10 mm x 10 mm is obtainable from the crystal by X-ray topography. Previously presented
Canceled
A GaN single crystal having a comprising polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein at least one square etch pit-free area of 1.3 mm x 1.3 mm is found on the gallium polar surface, said square etch pit-free area being an area where EPD is 0 cm⁻², and wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 mx 100 p m square, an average value of EPDs across the plurality of subareas is less than 1 x104 cm⁻² Currently amended
Materials described outside the worked examples.
GaN single crystal
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Average EPD across sub-areas (claim 1 upper bound) | ≤ 10000 cm⁻² | GaN |
Fraction of etch pit-free sub-areas (EPD=0 cm^-2) (claim 1 lower bound) | ≥ 80 % |
Table 1
SVG 17223073.04-15-2021.KNJ₇A₉VTDFLYX11.SPEC.86.19.370.1939.2182.2918.svg
The measured values of XRC-FWHM at all measurement points are listed in Table 1 below.
p. 43
Table 2
SVG 17223073.04-15-2021.KNJ₇A₉VTDFLYX11.SPEC.87.28.303.2406.2115.2943.svg
The measured values of XRC-FWHM at all the measurement points are listed in Table 2 below.
p. 44
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,591,715Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B illustrates a shape which a GaN single crystal according to an embodiment may have, with
FIGS. 2A, 2B, and 2C are perspective views illustrating shapes which a GaN single crystal according to an embodiment may have.
FIG. 3 is a plan view illustrating a GaN single crystal according to an embodiment.
FIG. 4 is an optical microscopic image of etch pits corresponding to various dislocations.
FIG. 5 illustrates an arrangement of an X-ray source, a test piece and a detector in transmission X- ray topography by the Lang Method.
FIG. 6 is a plan view illustrating a GaN single crystal.
FIG. 7A.
FIG. 8 is a plan view illustrating a pattern mask of a stripe type.
FIG. 9 is a plan view illustrating a pattern mask of a rhomboid grid type.
FIG. 10 is a plan view illustrating a pattern mask of a hexagonal grid type.
FIGS. 11 A, 11B, 11C, 11 D, and 11 E are cross-sectional views illustrating growth of a GaN crystal on a nitrogen polar surface of GaN of a seed.
FIG. 12 illustrates a crystal growth apparatus that may be used for growing a GaN crystal by an ammonothermal method.
FIG. 13 is a photograph illustrating an appearance of a C- plane GaN wafer.
FIG. 14 is an optical microscopic image of a gallium polar surface of a C-plane GaN wafer etched for one hour with 89% sulfuric acid heated to 270 0 C.
FIG. 15 is a transmission X-ray topography image of a C- plane GaN wafer.
FIG. 16 is a plan view of a C-plane GaN wafer for illustrating measurement directions of XRC- FWHMs.
FIG. 17 is a plan view of a C-plane GaN wafer for illustrating measurement directions of XRC- FWHMs.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN single crystal comprising a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 mx 100 m square, etch pit-free areas account for 80 % or more of the plurality of sub-areas, said etch pit-free areas being areas where EPD is 0 cm⁻², and wherein an average value of EPDs across the plurality of sub-areas is less than 1x10 4 cm -2 Previously presented
The GaN single crystal according to claim 1, wherein the etch pit-free areas account for 85 % or more of the plurality of sub-areas. Previously presented
The GaN single crystal according to claim 1, wherein the etch pit-free areas account for 90 % or more of the plurality of sub-areas. Previously presented
The GaN single crystal according to claim 1, wherein in a sub-area having a highest EPD among the plurality of sub-areas, the EPD is less than 1x 10 6 cm -2. Previously presented
The GaN single crystal according to claim 1, wherein at least one square etch pit-free area of 1.3 mmx 1.3 mm is found on the gallium polar surface. Previously presented
The GaN single crystal according to claim 1, wherein each of the gallium polar surface and the nitrogen polar surface has a size encompassing a 10 mmx10 mm square, and an anomalous transmission image of a square area of 10 mm x 10 mm is obtainable from the crystal by X-ray topography. Previously presented
Canceled
A GaN single crystal having a comprising polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein at least one square etch pit-free area of 1.3 mm x 1.3 mm is found on the gallium polar surface, said square etch pit-free area being an area where EPD is 0 cm⁻², and wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 mx 100 p m square, an average value of EPDs across the plurality of subareas is less than 1 x104 cm⁻² Currently amended
Materials described outside the worked examples.
GaN single crystal
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Average EPD across sub-areas (claim 1 upper bound) | ≤ 10000 cm⁻² | GaN |
Fraction of etch pit-free sub-areas (EPD=0 cm^-2) (claim 1 lower bound) | ≥ 80 % |
Table 1
SVG 17223073.04-15-2021.KNJ₇A₉VTDFLYX11.SPEC.86.19.370.1939.2182.2918.svg
The measured values of XRC-FWHM at all measurement points are listed in Table 1 below.
p. 43
Table 2
SVG 17223073.04-15-2021.KNJ₇A₉VTDFLYX11.SPEC.87.28.303.2406.2115.2943.svg
The measured values of XRC-FWHM at all the measurement points are listed in Table 2 below.
p. 44
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,591,715Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B illustrates a shape which a GaN single crystal according to an embodiment may have, with
FIGS. 2A, 2B, and 2C are perspective views illustrating shapes which a GaN single crystal according to an embodiment may have.
FIG. 3 is a plan view illustrating a GaN single crystal according to an embodiment.
FIG. 4 is an optical microscopic image of etch pits corresponding to various dislocations.
FIG. 5 illustrates an arrangement of an X-ray source, a test piece and a detector in transmission X- ray topography by the Lang Method.
FIG. 6 is a plan view illustrating a GaN single crystal.
FIG. 7A.
FIG. 8 is a plan view illustrating a pattern mask of a stripe type.
FIG. 9 is a plan view illustrating a pattern mask of a rhomboid grid type.
FIG. 10 is a plan view illustrating a pattern mask of a hexagonal grid type.
FIGS. 11 A, 11B, 11C, 11 D, and 11 E are cross-sectional views illustrating growth of a GaN crystal on a nitrogen polar surface of GaN of a seed.
FIG. 12 illustrates a crystal growth apparatus that may be used for growing a GaN crystal by an ammonothermal method.
FIG. 13 is a photograph illustrating an appearance of a C- plane GaN wafer.
FIG. 14 is an optical microscopic image of a gallium polar surface of a C-plane GaN wafer etched for one hour with 89% sulfuric acid heated to 270 0 C.
FIG. 15 is a transmission X-ray topography image of a C- plane GaN wafer.
FIG. 16 is a plan view of a C-plane GaN wafer for illustrating measurement directions of XRC- FWHMs.
FIG. 17 is a plan view of a C-plane GaN wafer for illustrating measurement directions of XRC- FWHMs.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN single crystal comprising a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 mx 100 m square, etch pit-free areas account for 80 % or more of the plurality of sub-areas, said etch pit-free areas being areas where EPD is 0 cm⁻², and wherein an average value of EPDs across the plurality of sub-areas is less than 1x10 4 cm -2 Previously presented
The GaN single crystal according to claim 1, wherein the etch pit-free areas account for 85 % or more of the plurality of sub-areas. Previously presented
The GaN single crystal according to claim 1, wherein the etch pit-free areas account for 90 % or more of the plurality of sub-areas. Previously presented
The GaN single crystal according to claim 1, wherein in a sub-area having a highest EPD among the plurality of sub-areas, the EPD is less than 1x 10 6 cm -2. Previously presented
The GaN single crystal according to claim 1, wherein at least one square etch pit-free area of 1.3 mmx 1.3 mm is found on the gallium polar surface. Previously presented
The GaN single crystal according to claim 1, wherein each of the gallium polar surface and the nitrogen polar surface has a size encompassing a 10 mmx10 mm square, and an anomalous transmission image of a square area of 10 mm x 10 mm is obtainable from the crystal by X-ray topography. Previously presented
Canceled
A GaN single crystal having a comprising polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein at least one square etch pit-free area of 1.3 mm x 1.3 mm is found on the gallium polar surface, said square etch pit-free area being an area where EPD is 0 cm⁻², and wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 mx 100 p m square, an average value of EPDs across the plurality of subareas is less than 1 x104 cm⁻² Currently amended
Materials described outside the worked examples.
GaN single crystal
GaN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Average EPD across sub-areas (claim 1 upper bound) | ≤ 10000 cm⁻² | GaN |
Fraction of etch pit-free sub-areas (EPD=0 cm^-2) (claim 1 lower bound) | ≥ 80 % |
Table 1
SVG 17223073.04-15-2021.KNJ₇A₉VTDFLYX11.SPEC.86.19.370.1939.2182.2918.svg
The measured values of XRC-FWHM at all measurement points are listed in Table 1 below.
p. 43
Table 2
SVG 17223073.04-15-2021.KNJ₇A₉VTDFLYX11.SPEC.87.28.303.2406.2115.2943.svg
The measured values of XRC-FWHM at all the measurement points are listed in Table 2 below.
p. 44
Related documents with shared materials, methods, properties, or citations.
Fraction of etch pit-free sub-areas (claim 2 lower bound) | ≥ 85 % | GaN |
Fraction of etch pit-free sub-areas (claim 3 lower bound) | ≥ 90 % | GaN |
EPD in highest-EPD sub-area (claim 4 upper bound) | ≤ 1000000 cm⁻² | GaN |
EPD in highest-EPD sub-area (claim 6 upper bound, with ≥90% pit-free) | ≤ 200000 cm⁻² | GaN |
Average EPD across sub-areas (claims 7 and 8 upper bound) | ≤ 3000 cm⁻² | GaN |
Thickness | 45–55 mm | — |
Thickness | 95–105 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Thickness | 295–305 mm | — |
Thickness | 3100–3500 cm | — |
Thickness | 1–2 mm | — |
Thickness | 1–1.5 mm | — |
Thickness | ≤ 2 mm | — |
— | ≤ 20 ev | — |
Thickness | ≥ 50 mm | — |
Thickness | ≥ 45 mm | — |
Fraction of etch pit-free sub-areas (claim 2 lower bound) | ≥ 85 % | GaN |
Fraction of etch pit-free sub-areas (claim 3 lower bound) | ≥ 90 % | GaN |
EPD in highest-EPD sub-area (claim 4 upper bound) | ≤ 1000000 cm⁻² | GaN |
EPD in highest-EPD sub-area (claim 6 upper bound, with ≥90% pit-free) | ≤ 200000 cm⁻² | GaN |
Average EPD across sub-areas (claims 7 and 8 upper bound) | ≤ 3000 cm⁻² | GaN |
Thickness | 45–55 mm | — |
Thickness | 95–105 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Thickness | 295–305 mm | — |
Thickness | 3100–3500 cm | — |
Thickness | 1–2 mm | — |
Thickness | 1–1.5 mm | — |
Thickness | ≤ 2 mm | — |
— | ≤ 20 ev | — |
Thickness | ≥ 50 mm | — |
Thickness | ≥ 45 mm | — |
Fraction of etch pit-free sub-areas (claim 2 lower bound) | ≥ 85 % | GaN |
Fraction of etch pit-free sub-areas (claim 3 lower bound) | ≥ 90 % | GaN |
EPD in highest-EPD sub-area (claim 4 upper bound) | ≤ 1000000 cm⁻² | GaN |
EPD in highest-EPD sub-area (claim 6 upper bound, with ≥90% pit-free) | ≤ 200000 cm⁻² | GaN |
Average EPD across sub-areas (claims 7 and 8 upper bound) | ≤ 3000 cm⁻² | GaN |
Thickness | 45–55 mm | — |
Thickness | 95–105 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Thickness | 295–305 mm | — |
Thickness | 3100–3500 cm | — |
Thickness | 1–2 mm | — |
Thickness | 1–1.5 mm | — |
Thickness | ≤ 2 mm | — |
— | ≤ 20 ev | — |
Thickness | ≥ 50 mm | — |
Thickness | ≥ 45 mm | — |
Fraction of etch pit-free sub-areas (claim 2 lower bound) | ≥ 85 % | GaN |
Fraction of etch pit-free sub-areas (claim 3 lower bound) | ≥ 90 % | GaN |
EPD in highest-EPD sub-area (claim 4 upper bound) | ≤ 1000000 cm⁻² | GaN |
EPD in highest-EPD sub-area (claim 6 upper bound, with ≥90% pit-free) | ≤ 200000 cm⁻² | GaN |
Average EPD across sub-areas (claims 7 and 8 upper bound) | ≤ 3000 cm⁻² | GaN |
Thickness | 45–55 mm | — |
Thickness | 95–105 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Thickness | 295–305 mm | — |
Thickness | 3100–3500 cm | — |
Thickness | 1–2 mm | — |
Thickness | 1–1.5 mm | — |
Thickness | ≤ 2 mm | — |
— | ≤ 20 ev | — |
Thickness | ≥ 50 mm | — |
Thickness | ≥ 45 mm | — |