Patent
US 8,999,060GaN WHISKERS AND METHODS OF GROWING THEM FROM SOLUTION
Boris N. Feigelson, Jennifer Hite, Francis J. Kub, Charles Eddy
US
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Patent
Atlas literature
Patent
US 8,999,060Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B illustrates the reactor containing a GaN feedstock dissolved in a solvent, where the GaN feedstock is either one formed during the exchange reaction in …
FIG. 2B illustrates the reactor containing a GaN feedstock dissolved in a solvent, where the GaN feedstock is either one formed during the exchange reaction in …
FIG. 3B depicts a single exemplary 2 mm long GaN whisker in accordance with the present invention and illustrates its length and growth direction. Page 3 of 17 …
FIG. 4 is a room temperature micro-Raman spectrum of an exemplary GaN whisker in accordance with the present invention. [016]
FIGS. 5A-5C are optical images illustrating the flexibility and elasticity of an exemplary GaN whisker in accordance with the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A low pressure and low temperature process for growing gallium nitride whiskers from solution, comprising: (a) charging a reaction vessel with a gallium composition comprising gallium mixed with at least one of bismuth and antimony, a Group IA element material, and gallium nitride; (b) placing the charged reaction and vessel into a chamber; SVG 13794877.02-05-2015.I₅S₇₉E₇VPXXIFW3.CLM9569022.11.150.1542.2247.1628.svg 0.287 6.99 Chemistry Black and white vessel; (d) applying a temperature of between 4emt 700 to abest-900 0 C to the reaction vessel (i) to cause the gallium nitride from the gallium nitride e.adand/or nitrogen to dissolve in the solvent comprising the- gallium, at least one of bismuth and antimony, and a- the Group IA element; fe g-1jfj) to forn a solution,; and (i}jj to precipitate g afllim nrijde out of the solution as-g-aliam-niei&a mp;-exclusively in the form of gallium nitride whiskers.
The process of claim 1, wherein the second temperature is a liquefaction temperature of the solution.
(Cu rre ntly Amended) The process of claim 1, further comprising providing a temperature difference of e-hab1 -100 0 C across a depth of the solution. Page 3 of 7 U.S. Application No. 13/794,877 Response to Office Action dated
(Cu rr ently Amended) The process of claim 1, wherein the nitrogen gas pressure is abem-0.2 MPa.
(Cu rr ently Amended) The process of claim 1, wherein the temperature is a b t- 750-850 ±°C.
The process of claim 1, wherein the Group IA element material is lithium.
The process of claim 1, further comprising exposing a gallium nitride seed to the solvent, wherein the gallium nitride precipitates out of the solution as gallium nitride whiskers precipitates on the seed.
The process according to claim 1, wherein the fraction of the at least one of bismuth and antimony in the gallium is less than 10 mol %. Page 4 of 7
Materials described outside the worked examples.
gallium nitride
GaN
gallium
Ga
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a room temperature micro-Raman spectrum of an exemplary GaN whisker in accordance with the present invention. [016]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN whisker length scale | millimeter-scale | GaN |
nitrogen pressure range | 0.1–20 MPa |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,999,060Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B illustrates the reactor containing a GaN feedstock dissolved in a solvent, where the GaN feedstock is either one formed during the exchange reaction in …
FIG. 2B illustrates the reactor containing a GaN feedstock dissolved in a solvent, where the GaN feedstock is either one formed during the exchange reaction in …
FIG. 3B depicts a single exemplary 2 mm long GaN whisker in accordance with the present invention and illustrates its length and growth direction. Page 3 of 17 …
FIG. 4 is a room temperature micro-Raman spectrum of an exemplary GaN whisker in accordance with the present invention. [016]
FIGS. 5A-5C are optical images illustrating the flexibility and elasticity of an exemplary GaN whisker in accordance with the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A low pressure and low temperature process for growing gallium nitride whiskers from solution, comprising: (a) charging a reaction vessel with a gallium composition comprising gallium mixed with at least one of bismuth and antimony, a Group IA element material, and gallium nitride; (b) placing the charged reaction and vessel into a chamber; SVG 13794877.02-05-2015.I₅S₇₉E₇VPXXIFW3.CLM9569022.11.150.1542.2247.1628.svg 0.287 6.99 Chemistry Black and white vessel; (d) applying a temperature of between 4emt 700 to abest-900 0 C to the reaction vessel (i) to cause the gallium nitride from the gallium nitride e.adand/or nitrogen to dissolve in the solvent comprising the- gallium, at least one of bismuth and antimony, and a- the Group IA element; fe g-1jfj) to forn a solution,; and (i}jj to precipitate g afllim nrijde out of the solution as-g-aliam-niei&a mp;-exclusively in the form of gallium nitride whiskers.
The process of claim 1, wherein the second temperature is a liquefaction temperature of the solution.
(Cu rre ntly Amended) The process of claim 1, further comprising providing a temperature difference of e-hab1 -100 0 C across a depth of the solution. Page 3 of 7 U.S. Application No. 13/794,877 Response to Office Action dated
(Cu rr ently Amended) The process of claim 1, wherein the nitrogen gas pressure is abem-0.2 MPa.
(Cu rr ently Amended) The process of claim 1, wherein the temperature is a b t- 750-850 ±°C.
The process of claim 1, wherein the Group IA element material is lithium.
The process of claim 1, further comprising exposing a gallium nitride seed to the solvent, wherein the gallium nitride precipitates out of the solution as gallium nitride whiskers precipitates on the seed.
The process according to claim 1, wherein the fraction of the at least one of bismuth and antimony in the gallium is less than 10 mol %. Page 4 of 7
Materials described outside the worked examples.
gallium nitride
GaN
gallium
Ga
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a room temperature micro-Raman spectrum of an exemplary GaN whisker in accordance with the present invention. [016]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN whisker length scale | millimeter-scale | GaN |
nitrogen pressure range | 0.1–20 MPa |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,999,060Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B illustrates the reactor containing a GaN feedstock dissolved in a solvent, where the GaN feedstock is either one formed during the exchange reaction in …
FIG. 2B illustrates the reactor containing a GaN feedstock dissolved in a solvent, where the GaN feedstock is either one formed during the exchange reaction in …
FIG. 3B depicts a single exemplary 2 mm long GaN whisker in accordance with the present invention and illustrates its length and growth direction. Page 3 of 17 …
FIG. 4 is a room temperature micro-Raman spectrum of an exemplary GaN whisker in accordance with the present invention. [016]
FIGS. 5A-5C are optical images illustrating the flexibility and elasticity of an exemplary GaN whisker in accordance with the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A low pressure and low temperature process for growing gallium nitride whiskers from solution, comprising: (a) charging a reaction vessel with a gallium composition comprising gallium mixed with at least one of bismuth and antimony, a Group IA element material, and gallium nitride; (b) placing the charged reaction and vessel into a chamber; SVG 13794877.02-05-2015.I₅S₇₉E₇VPXXIFW3.CLM9569022.11.150.1542.2247.1628.svg 0.287 6.99 Chemistry Black and white vessel; (d) applying a temperature of between 4emt 700 to abest-900 0 C to the reaction vessel (i) to cause the gallium nitride from the gallium nitride e.adand/or nitrogen to dissolve in the solvent comprising the- gallium, at least one of bismuth and antimony, and a- the Group IA element; fe g-1jfj) to forn a solution,; and (i}jj to precipitate g afllim nrijde out of the solution as-g-aliam-niei&a mp;-exclusively in the form of gallium nitride whiskers.
The process of claim 1, wherein the second temperature is a liquefaction temperature of the solution.
(Cu rre ntly Amended) The process of claim 1, further comprising providing a temperature difference of e-hab1 -100 0 C across a depth of the solution. Page 3 of 7 U.S. Application No. 13/794,877 Response to Office Action dated
(Cu rr ently Amended) The process of claim 1, wherein the nitrogen gas pressure is abem-0.2 MPa.
(Cu rr ently Amended) The process of claim 1, wherein the temperature is a b t- 750-850 ±°C.
The process of claim 1, wherein the Group IA element material is lithium.
The process of claim 1, further comprising exposing a gallium nitride seed to the solvent, wherein the gallium nitride precipitates out of the solution as gallium nitride whiskers precipitates on the seed.
The process according to claim 1, wherein the fraction of the at least one of bismuth and antimony in the gallium is less than 10 mol %. Page 4 of 7
Materials described outside the worked examples.
gallium nitride
GaN
gallium
Ga
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a room temperature micro-Raman spectrum of an exemplary GaN whisker in accordance with the present invention. [016]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN whisker length scale | millimeter-scale | GaN |
nitrogen pressure range | 0.1–20 MPa |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,999,060Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B illustrates the reactor containing a GaN feedstock dissolved in a solvent, where the GaN feedstock is either one formed during the exchange reaction in …
FIG. 2B illustrates the reactor containing a GaN feedstock dissolved in a solvent, where the GaN feedstock is either one formed during the exchange reaction in …
FIG. 3B depicts a single exemplary 2 mm long GaN whisker in accordance with the present invention and illustrates its length and growth direction. Page 3 of 17 …
FIG. 4 is a room temperature micro-Raman spectrum of an exemplary GaN whisker in accordance with the present invention. [016]
FIGS. 5A-5C are optical images illustrating the flexibility and elasticity of an exemplary GaN whisker in accordance with the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A low pressure and low temperature process for growing gallium nitride whiskers from solution, comprising: (a) charging a reaction vessel with a gallium composition comprising gallium mixed with at least one of bismuth and antimony, a Group IA element material, and gallium nitride; (b) placing the charged reaction and vessel into a chamber; SVG 13794877.02-05-2015.I₅S₇₉E₇VPXXIFW3.CLM9569022.11.150.1542.2247.1628.svg 0.287 6.99 Chemistry Black and white vessel; (d) applying a temperature of between 4emt 700 to abest-900 0 C to the reaction vessel (i) to cause the gallium nitride from the gallium nitride e.adand/or nitrogen to dissolve in the solvent comprising the- gallium, at least one of bismuth and antimony, and a- the Group IA element; fe g-1jfj) to forn a solution,; and (i}jj to precipitate g afllim nrijde out of the solution as-g-aliam-niei&a mp;-exclusively in the form of gallium nitride whiskers.
The process of claim 1, wherein the second temperature is a liquefaction temperature of the solution.
(Cu rre ntly Amended) The process of claim 1, further comprising providing a temperature difference of e-hab1 -100 0 C across a depth of the solution. Page 3 of 7 U.S. Application No. 13/794,877 Response to Office Action dated
(Cu rr ently Amended) The process of claim 1, wherein the nitrogen gas pressure is abem-0.2 MPa.
(Cu rr ently Amended) The process of claim 1, wherein the temperature is a b t- 750-850 ±°C.
The process of claim 1, wherein the Group IA element material is lithium.
The process of claim 1, further comprising exposing a gallium nitride seed to the solvent, wherein the gallium nitride precipitates out of the solution as gallium nitride whiskers precipitates on the seed.
The process according to claim 1, wherein the fraction of the at least one of bismuth and antimony in the gallium is less than 10 mol %. Page 4 of 7
Materials described outside the worked examples.
gallium nitride
GaN
gallium
Ga
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a room temperature micro-Raman spectrum of an exemplary GaN whisker in accordance with the present invention. [016]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN whisker length scale | millimeter-scale | GaN |
nitrogen pressure range | 0.1–20 MPa |
Related documents with shared materials, methods, properties, or citations.
bismuth
Bi
antimony
Sb
Group IA element material
lithium
Li
lithium nitride
Li₃N
nitrogen
N₂
| — |
fraction of Bi and/or Sb in gallium | <10 mol% | Ga |
Pressure | 0.001 Torr | — |
Pressure | 0.1–20 MPa | — |
Temperature | 700–900 °C | — |
Temperature | 750–850 °C | — |
Pressure | 0.1–2 MPa | — |
Temperature | 1–100 °C | — |
Temperature | 5–50 °C | — |
bismuth
Bi
antimony
Sb
Group IA element material
lithium
Li
lithium nitride
Li₃N
nitrogen
N₂
| — |
fraction of Bi and/or Sb in gallium | <10 mol% | Ga |
Pressure | 0.001 Torr | — |
Pressure | 0.1–20 MPa | — |
Temperature | 700–900 °C | — |
Temperature | 750–850 °C | — |
Pressure | 0.1–2 MPa | — |
Temperature | 1–100 °C | — |
Temperature | 5–50 °C | — |
bismuth
Bi
antimony
Sb
Group IA element material
lithium
Li
lithium nitride
Li₃N
nitrogen
N₂
| — |
fraction of Bi and/or Sb in gallium | <10 mol% | Ga |
Pressure | 0.001 Torr | — |
Pressure | 0.1–20 MPa | — |
Temperature | 700–900 °C | — |
Temperature | 750–850 °C | — |
Pressure | 0.1–2 MPa | — |
Temperature | 1–100 °C | — |
Temperature | 5–50 °C | — |
bismuth
Bi
antimony
Sb
Group IA element material
lithium
Li
lithium nitride
Li₃N
nitrogen
N₂
| — |
fraction of Bi and/or Sb in gallium | <10 mol% | Ga |
Pressure | 0.001 Torr | — |
Pressure | 0.1–20 MPa | — |
Temperature | 700–900 °C | — |
Temperature | 750–850 °C | — |
Pressure | 0.1–2 MPa | — |
Temperature | 1–100 °C | — |
Temperature | 5–50 °C | — |