Patent
US 11,031,167GIANT PERPENDICULAR MAGNETIC ANISOTROPY IN FE/GAN THIN FILMS FOR DATA STORAGE AND MEMORY DEVICES
Jiadong Zang, Jiexiang Yu
US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 11,031,167Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. With the occupation and orbital components derived, one can estimate the energy gain from SOC by the first order perturbation: AE = 0.904 x A(2 x 2a+ 1 …
FIG. 2 illustrates the difference between total charge density of the Fe(1 ML)/GaN system of the described embodiments, and the sum of charge densities of a …
FIG. 3A illustrates projected density-of-state (PDOS) of Fe(3d) as a function of E-E F. [0021]
FIG. 4 illustrates a method of fabricating a giant 5362.1003-001-12-PM A material, comprising exposing 402 a surface of a III -V nitride substrate to an …
FIG. 5 illustrates an example of such a memory device 500 according to the invention. The memory device comprises a plurality of magnetic memory elements 502 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A giant perpendicular magnetic anisotropy (PMA) material, comprising: a I II -V nitride substrate; a layer of nitrogen disposed upon a (0001) surface of the III -V nitride substrate, the layer of nitrogen forming a (000T) nitrogen terminated (N-terminated) surface; and an iron film disposed upon the (000 T) N-terminated surface. Previously presented
The giant PMA material of claim 1, wherein the 1ll -V nitride is gallium nitride (GaN). Original
The giant PMA material of claim 1, wherein the layer of nitrogen is a wurtzite GaN (000T) N-terminated surface. Original
The giant PMA material of claim 1, wherein the layer of nitrogen is a monolayer of nitrogen atoms. Original
The giant PMA material of claim 1, wherein the iron film is less than or equal to three monolayers of iron atoms. Original
A method of fabricating a giant PMA material, comprising: exposing a (000T) surface of a III-V nitride substrate to an atmosphere configured to provide a source of nitrogen, to dispose a layer of nitrogen on the (000T) surface of the III -V nitride substrate, the layer of nitrogen forming an (000T) N-terminated surface; disposing an iron film upon the (000 1) N-terminated surface. Previously presented
The method of claim 6, wherein the atmosphere is configured to provide a source of nitrogen comprises an atmosphere of nitrogen. Original
The method of claim 6, wherein the atmosphere is configured to provide a source of nitrogen comprising an atmosphere of excessive N H 3. Previously presented
The method of claim 6, further comprising heating I II -V nitride substrate to a temperature of 1000 0 C, while exposing the I II -V nitride substrate to a nitrogen plasma. Previously presented
The method of claim 6, wherein the I II -V nitride is gallium nitride (GaN). Original
The method of claim 6, wherein the layer of nitrogen is a wurtzite GaN (000T) N-terminated surface. Original
The method of claim 6, wherein the layer of nitrogen is a monolayer of nitrogen atoms. Original
The method of claim 6, wherein the iron film is less than or equal to three monolayers of iron atoms. Original
A memory device, comprising: a memory element comprising: a I II -V nitride substrate; a layer of nitrogen disposed upon a (000 T) surface of the I II -V nitride substrate, the layer of nitrogen forming an (000 T) N-terminated surface; and an iron film disposed upon the (000 1) N-terminated surface; an input/output interface configured to communicate an address signal, a read/write signal and a data signal; and a controller configured to coordinate reading data from and writing data to the memory element. Previously presented
The memory device of claim 16, wherein the I II -V nitride is gallium nitride (GaN). Original
The memory device of claim 16, wherein the layer of nitrogen is a wurtzite GaN (000T) N-terminated surface. Original
(Or ig inal) The memory device of claim 16, nitrogen atoms. Original
The memory device of claim 16, wherein the monolayers of iron atoms. Original wherein the layer of nitrogen is a monolayer of iron film is less than or equal to three
Layer stacks claimed or described, ordered top of device to substrate.
giant PMA material (Fe/GaN thin film)
memory device with Fe/GaN PMA memory element
Materials described outside the worked examples.
III-V nitride substrate
nitrogen layer (N-terminated surface)
N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1B. With the occupation and orbital components derived, one can estimate the energy gain from SOC by the first order perturbation: AE = 0.904 x A(2 x 2a+ 1 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
giant PMA — more than one order of magnitude larger than Fe/MgO | — | Fe/GaN thin film |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,031,167Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. With the occupation and orbital components derived, one can estimate the energy gain from SOC by the first order perturbation: AE = 0.904 x A(2 x 2a+ 1 …
FIG. 2 illustrates the difference between total charge density of the Fe(1 ML)/GaN system of the described embodiments, and the sum of charge densities of a …
FIG. 3A illustrates projected density-of-state (PDOS) of Fe(3d) as a function of E-E F. [0021]
FIG. 4 illustrates a method of fabricating a giant 5362.1003-001-12-PM A material, comprising exposing 402 a surface of a III -V nitride substrate to an …
FIG. 5 illustrates an example of such a memory device 500 according to the invention. The memory device comprises a plurality of magnetic memory elements 502 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A giant perpendicular magnetic anisotropy (PMA) material, comprising: a I II -V nitride substrate; a layer of nitrogen disposed upon a (0001) surface of the III -V nitride substrate, the layer of nitrogen forming a (000T) nitrogen terminated (N-terminated) surface; and an iron film disposed upon the (000 T) N-terminated surface. Previously presented
The giant PMA material of claim 1, wherein the 1ll -V nitride is gallium nitride (GaN). Original
The giant PMA material of claim 1, wherein the layer of nitrogen is a wurtzite GaN (000T) N-terminated surface. Original
The giant PMA material of claim 1, wherein the layer of nitrogen is a monolayer of nitrogen atoms. Original
The giant PMA material of claim 1, wherein the iron film is less than or equal to three monolayers of iron atoms. Original
A method of fabricating a giant PMA material, comprising: exposing a (000T) surface of a III-V nitride substrate to an atmosphere configured to provide a source of nitrogen, to dispose a layer of nitrogen on the (000T) surface of the III -V nitride substrate, the layer of nitrogen forming an (000T) N-terminated surface; disposing an iron film upon the (000 1) N-terminated surface. Previously presented
The method of claim 6, wherein the atmosphere is configured to provide a source of nitrogen comprises an atmosphere of nitrogen. Original
The method of claim 6, wherein the atmosphere is configured to provide a source of nitrogen comprising an atmosphere of excessive N H 3. Previously presented
The method of claim 6, further comprising heating I II -V nitride substrate to a temperature of 1000 0 C, while exposing the I II -V nitride substrate to a nitrogen plasma. Previously presented
The method of claim 6, wherein the I II -V nitride is gallium nitride (GaN). Original
The method of claim 6, wherein the layer of nitrogen is a wurtzite GaN (000T) N-terminated surface. Original
The method of claim 6, wherein the layer of nitrogen is a monolayer of nitrogen atoms. Original
The method of claim 6, wherein the iron film is less than or equal to three monolayers of iron atoms. Original
A memory device, comprising: a memory element comprising: a I II -V nitride substrate; a layer of nitrogen disposed upon a (000 T) surface of the I II -V nitride substrate, the layer of nitrogen forming an (000 T) N-terminated surface; and an iron film disposed upon the (000 1) N-terminated surface; an input/output interface configured to communicate an address signal, a read/write signal and a data signal; and a controller configured to coordinate reading data from and writing data to the memory element. Previously presented
The memory device of claim 16, wherein the I II -V nitride is gallium nitride (GaN). Original
The memory device of claim 16, wherein the layer of nitrogen is a wurtzite GaN (000T) N-terminated surface. Original
(Or ig inal) The memory device of claim 16, nitrogen atoms. Original
The memory device of claim 16, wherein the monolayers of iron atoms. Original wherein the layer of nitrogen is a monolayer of iron film is less than or equal to three
Layer stacks claimed or described, ordered top of device to substrate.
giant PMA material (Fe/GaN thin film)
memory device with Fe/GaN PMA memory element
Materials described outside the worked examples.
III-V nitride substrate
nitrogen layer (N-terminated surface)
N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1B. With the occupation and orbital components derived, one can estimate the energy gain from SOC by the first order perturbation: AE = 0.904 x A(2 x 2a+ 1 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
giant PMA — more than one order of magnitude larger than Fe/MgO | — | Fe/GaN thin film |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,031,167Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. With the occupation and orbital components derived, one can estimate the energy gain from SOC by the first order perturbation: AE = 0.904 x A(2 x 2a+ 1 …
FIG. 2 illustrates the difference between total charge density of the Fe(1 ML)/GaN system of the described embodiments, and the sum of charge densities of a …
FIG. 3A illustrates projected density-of-state (PDOS) of Fe(3d) as a function of E-E F. [0021]
FIG. 4 illustrates a method of fabricating a giant 5362.1003-001-12-PM A material, comprising exposing 402 a surface of a III -V nitride substrate to an …
FIG. 5 illustrates an example of such a memory device 500 according to the invention. The memory device comprises a plurality of magnetic memory elements 502 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A giant perpendicular magnetic anisotropy (PMA) material, comprising: a I II -V nitride substrate; a layer of nitrogen disposed upon a (0001) surface of the III -V nitride substrate, the layer of nitrogen forming a (000T) nitrogen terminated (N-terminated) surface; and an iron film disposed upon the (000 T) N-terminated surface. Previously presented
The giant PMA material of claim 1, wherein the 1ll -V nitride is gallium nitride (GaN). Original
The giant PMA material of claim 1, wherein the layer of nitrogen is a wurtzite GaN (000T) N-terminated surface. Original
The giant PMA material of claim 1, wherein the layer of nitrogen is a monolayer of nitrogen atoms. Original
The giant PMA material of claim 1, wherein the iron film is less than or equal to three monolayers of iron atoms. Original
A method of fabricating a giant PMA material, comprising: exposing a (000T) surface of a III-V nitride substrate to an atmosphere configured to provide a source of nitrogen, to dispose a layer of nitrogen on the (000T) surface of the III -V nitride substrate, the layer of nitrogen forming an (000T) N-terminated surface; disposing an iron film upon the (000 1) N-terminated surface. Previously presented
The method of claim 6, wherein the atmosphere is configured to provide a source of nitrogen comprises an atmosphere of nitrogen. Original
The method of claim 6, wherein the atmosphere is configured to provide a source of nitrogen comprising an atmosphere of excessive N H 3. Previously presented
The method of claim 6, further comprising heating I II -V nitride substrate to a temperature of 1000 0 C, while exposing the I II -V nitride substrate to a nitrogen plasma. Previously presented
The method of claim 6, wherein the I II -V nitride is gallium nitride (GaN). Original
The method of claim 6, wherein the layer of nitrogen is a wurtzite GaN (000T) N-terminated surface. Original
The method of claim 6, wherein the layer of nitrogen is a monolayer of nitrogen atoms. Original
The method of claim 6, wherein the iron film is less than or equal to three monolayers of iron atoms. Original
A memory device, comprising: a memory element comprising: a I II -V nitride substrate; a layer of nitrogen disposed upon a (000 T) surface of the I II -V nitride substrate, the layer of nitrogen forming an (000 T) N-terminated surface; and an iron film disposed upon the (000 1) N-terminated surface; an input/output interface configured to communicate an address signal, a read/write signal and a data signal; and a controller configured to coordinate reading data from and writing data to the memory element. Previously presented
The memory device of claim 16, wherein the I II -V nitride is gallium nitride (GaN). Original
The memory device of claim 16, wherein the layer of nitrogen is a wurtzite GaN (000T) N-terminated surface. Original
(Or ig inal) The memory device of claim 16, nitrogen atoms. Original
The memory device of claim 16, wherein the monolayers of iron atoms. Original wherein the layer of nitrogen is a monolayer of iron film is less than or equal to three
Layer stacks claimed or described, ordered top of device to substrate.
giant PMA material (Fe/GaN thin film)
memory device with Fe/GaN PMA memory element
Materials described outside the worked examples.
III-V nitride substrate
nitrogen layer (N-terminated surface)
N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1B. With the occupation and orbital components derived, one can estimate the energy gain from SOC by the first order perturbation: AE = 0.904 x A(2 x 2a+ 1 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
giant PMA — more than one order of magnitude larger than Fe/MgO | — | Fe/GaN thin film |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,031,167Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1B. With the occupation and orbital components derived, one can estimate the energy gain from SOC by the first order perturbation: AE = 0.904 x A(2 x 2a+ 1 …
FIG. 2 illustrates the difference between total charge density of the Fe(1 ML)/GaN system of the described embodiments, and the sum of charge densities of a …
FIG. 3A illustrates projected density-of-state (PDOS) of Fe(3d) as a function of E-E F. [0021]
FIG. 4 illustrates a method of fabricating a giant 5362.1003-001-12-PM A material, comprising exposing 402 a surface of a III -V nitride substrate to an …
FIG. 5 illustrates an example of such a memory device 500 according to the invention. The memory device comprises a plurality of magnetic memory elements 502 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A giant perpendicular magnetic anisotropy (PMA) material, comprising: a I II -V nitride substrate; a layer of nitrogen disposed upon a (0001) surface of the III -V nitride substrate, the layer of nitrogen forming a (000T) nitrogen terminated (N-terminated) surface; and an iron film disposed upon the (000 T) N-terminated surface. Previously presented
The giant PMA material of claim 1, wherein the 1ll -V nitride is gallium nitride (GaN). Original
The giant PMA material of claim 1, wherein the layer of nitrogen is a wurtzite GaN (000T) N-terminated surface. Original
The giant PMA material of claim 1, wherein the layer of nitrogen is a monolayer of nitrogen atoms. Original
The giant PMA material of claim 1, wherein the iron film is less than or equal to three monolayers of iron atoms. Original
A method of fabricating a giant PMA material, comprising: exposing a (000T) surface of a III-V nitride substrate to an atmosphere configured to provide a source of nitrogen, to dispose a layer of nitrogen on the (000T) surface of the III -V nitride substrate, the layer of nitrogen forming an (000T) N-terminated surface; disposing an iron film upon the (000 1) N-terminated surface. Previously presented
The method of claim 6, wherein the atmosphere is configured to provide a source of nitrogen comprises an atmosphere of nitrogen. Original
The method of claim 6, wherein the atmosphere is configured to provide a source of nitrogen comprising an atmosphere of excessive N H 3. Previously presented
The method of claim 6, further comprising heating I II -V nitride substrate to a temperature of 1000 0 C, while exposing the I II -V nitride substrate to a nitrogen plasma. Previously presented
The method of claim 6, wherein the I II -V nitride is gallium nitride (GaN). Original
The method of claim 6, wherein the layer of nitrogen is a wurtzite GaN (000T) N-terminated surface. Original
The method of claim 6, wherein the layer of nitrogen is a monolayer of nitrogen atoms. Original
The method of claim 6, wherein the iron film is less than or equal to three monolayers of iron atoms. Original
A memory device, comprising: a memory element comprising: a I II -V nitride substrate; a layer of nitrogen disposed upon a (000 T) surface of the I II -V nitride substrate, the layer of nitrogen forming an (000 T) N-terminated surface; and an iron film disposed upon the (000 1) N-terminated surface; an input/output interface configured to communicate an address signal, a read/write signal and a data signal; and a controller configured to coordinate reading data from and writing data to the memory element. Previously presented
The memory device of claim 16, wherein the I II -V nitride is gallium nitride (GaN). Original
The memory device of claim 16, wherein the layer of nitrogen is a wurtzite GaN (000T) N-terminated surface. Original
(Or ig inal) The memory device of claim 16, nitrogen atoms. Original
The memory device of claim 16, wherein the monolayers of iron atoms. Original wherein the layer of nitrogen is a monolayer of iron film is less than or equal to three
Layer stacks claimed or described, ordered top of device to substrate.
giant PMA material (Fe/GaN thin film)
memory device with Fe/GaN PMA memory element
Materials described outside the worked examples.
III-V nitride substrate
nitrogen layer (N-terminated surface)
N
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1B. With the occupation and orbital components derived, one can estimate the energy gain from SOC by the first order perturbation: AE = 0.904 x A(2 x 2a+ 1 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
giant PMA — more than one order of magnitude larger than Fe/MgO | — | Fe/GaN thin film |
Related documents with shared materials, methods, properties, or citations.
iron film
Fe
gallium nitride
GaN
ammonia (excessive NH₃)
NH₃
Fe/GaN thin film
FIG. 3A illustrates projected density-of-state (PDOS) of Fe(3d) as a function of E-E F. [0021]
iron film
Fe
gallium nitride
GaN
ammonia (excessive NH₃)
NH₃
Fe/GaN thin film
FIG. 3A illustrates projected density-of-state (PDOS) of Fe(3d) as a function of E-E F. [0021]
iron film
Fe
gallium nitride
GaN
ammonia (excessive NH₃)
NH₃
Fe/GaN thin film
FIG. 3A illustrates projected density-of-state (PDOS) of Fe(3d) as a function of E-E F. [0021]
iron film
Fe
gallium nitride
GaN
ammonia (excessive NH₃)
NH₃
Fe/GaN thin film
FIG. 3A illustrates projected density-of-state (PDOS) of Fe(3d) as a function of E-E F. [0021]