Patent
US 10,662,537diamond cathode
C
reduced graphene oxide (GRAPHENEA RGO)
ELICARB GRAPHENE (solvent-exfoliated graphene)
expanded graphite L₂₁₃₆
dehydrogenated graphite flakes |
G peak FWHM larger than 20 cm-1 (dehydrogenated graphite, claim 11) | ≥ 20 cm⁻¹ | dehydrogenated graphite flakes |
Average D/G area ratio between 0.2 and 4 (reversibly hydrogenated graphite, claim 13) | 0.2–4 dimensionless | reversibly hydrogenated graphite flakes |
Coefficient of determination >0.99 for >50% of spectra after thermal treatment (reversibly hydrogenated graphite, claim 13) | ≥ 0.99 dimensionless | reversibly hydrogenated graphite flakes |
Voltage | 5–60 V | — |
Voltage | 15–30 V | — |
Thickness | 2–5 um | — |
Thickness | 0.5–2 µm | — |
Thickness | ≤ 10 um | — |
Thickness | ≤ 5 um | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 0.5 um | — |
Temperature | ≤ 300 °C | — |
Thickness | ≤ 3 µm | — |
— | ≤ 0.5 ev | — |
Thickness | ≥ 50 um | — |
Thickness | ≥ 1 um | — |
Temperature | 0–800 °C | — |
Thickness | ≥ 10 um | — |
Voltage | 10–50 V | — |
Voltage | 12–45 V | — |
Temperature | 100–800 °C | — |
Temperature | 300–650 °C | — |
diamond cathode
C
reduced graphene oxide (GRAPHENEA RGO)
ELICARB GRAPHENE (solvent-exfoliated graphene)
expanded graphite L₂₁₃₆
dehydrogenated graphite flakes |
G peak FWHM larger than 20 cm-1 (dehydrogenated graphite, claim 11) | ≥ 20 cm⁻¹ | dehydrogenated graphite flakes |
Average D/G area ratio between 0.2 and 4 (reversibly hydrogenated graphite, claim 13) | 0.2–4 dimensionless | reversibly hydrogenated graphite flakes |
Coefficient of determination >0.99 for >50% of spectra after thermal treatment (reversibly hydrogenated graphite, claim 13) | ≥ 0.99 dimensionless | reversibly hydrogenated graphite flakes |
Voltage | 5–60 V | — |
Voltage | 15–30 V | — |
Thickness | 2–5 um | — |
Thickness | 0.5–2 µm | — |
Thickness | ≤ 10 um | — |
Thickness | ≤ 5 um | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 0.5 um | — |
Temperature | ≤ 300 °C | — |
Thickness | ≤ 3 µm | — |
— | ≤ 0.5 ev | — |
Thickness | ≥ 50 um | — |
Thickness | ≥ 1 um | — |
Temperature | 0–800 °C | — |
Thickness | ≥ 10 um | — |
Voltage | 10–50 V | — |
Voltage | 12–45 V | — |
Temperature | 100–800 °C | — |
Temperature | 300–650 °C | — |
diamond cathode
C
reduced graphene oxide (GRAPHENEA RGO)
ELICARB GRAPHENE (solvent-exfoliated graphene)
expanded graphite L₂₁₃₆
dehydrogenated graphite flakes |
G peak FWHM larger than 20 cm-1 (dehydrogenated graphite, claim 11) | ≥ 20 cm⁻¹ | dehydrogenated graphite flakes |
Average D/G area ratio between 0.2 and 4 (reversibly hydrogenated graphite, claim 13) | 0.2–4 dimensionless | reversibly hydrogenated graphite flakes |
Coefficient of determination >0.99 for >50% of spectra after thermal treatment (reversibly hydrogenated graphite, claim 13) | ≥ 0.99 dimensionless | reversibly hydrogenated graphite flakes |
Voltage | 5–60 V | — |
Voltage | 15–30 V | — |
Thickness | 2–5 um | — |
Thickness | 0.5–2 µm | — |
Thickness | ≤ 10 um | — |
Thickness | ≤ 5 um | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 0.5 um | — |
Temperature | ≤ 300 °C | — |
Thickness | ≤ 3 µm | — |
— | ≤ 0.5 ev | — |
Thickness | ≥ 50 um | — |
Thickness | ≥ 1 um | — |
Temperature | 0–800 °C | — |
Thickness | ≥ 10 um | — |
Voltage | 10–50 V | — |
Voltage | 12–45 V | — |
Temperature | 100–800 °C | — |
Temperature | 300–650 °C | — |
diamond cathode
C
reduced graphene oxide (GRAPHENEA RGO)
ELICARB GRAPHENE (solvent-exfoliated graphene)
expanded graphite L₂₁₃₆
dehydrogenated graphite flakes |
G peak FWHM larger than 20 cm-1 (dehydrogenated graphite, claim 11) | ≥ 20 cm⁻¹ | dehydrogenated graphite flakes |
Average D/G area ratio between 0.2 and 4 (reversibly hydrogenated graphite, claim 13) | 0.2–4 dimensionless | reversibly hydrogenated graphite flakes |
Coefficient of determination >0.99 for >50% of spectra after thermal treatment (reversibly hydrogenated graphite, claim 13) | ≥ 0.99 dimensionless | reversibly hydrogenated graphite flakes |
Voltage | 5–60 V | — |
Voltage | 15–30 V | — |
Thickness | 2–5 um | — |
Thickness | 0.5–2 µm | — |
Thickness | ≤ 10 um | — |
Thickness | ≤ 5 um | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 0.5 um | — |
Temperature | ≤ 300 °C | — |
Thickness | ≤ 3 µm | — |
— | ≤ 0.5 ev | — |
Thickness | ≥ 50 um | — |
Thickness | ≥ 1 um | — |
Temperature | 0–800 °C | — |
Thickness | ≥ 10 um | — |
Voltage | 10–50 V | — |
Voltage | 12–45 V | — |
Temperature | 100–800 °C | — |
Temperature | 300–650 °C | — |