Patent
US 8,963,265Graphene based detector device
Marcio C. de Andrade
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,963,265Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A transistor, comprising: a source; a drain; a gate, said gate including a discharging element and a graphene sheet located between said source and said drain, said graphene sheet gate-elerode sid minimum wid aid graph neet in direct contact with said dischar ging element, said qrap hene sheet havin q a substantially zero band qap, said qrap hene sheet further receivin q incident radiation which im pinq es on said qrap hene sheet; said incident radiation freein q electrons in said qrap hene due to said zero band qap; an electrical field e aren t in electrical communication with said graphene sheet, to prevent said electrons from recombinin q with said qrap hene sheet; and, caid electric field said qrap hene sheet havin q a width with a decreasin q taper, from a maximum width distal to said dischar qinq element to a minimum width p roximate to said dischar qinq element, to allow said electrons to move towards said discharging element.
The transistor of claim 1 further comprising an electromagnetic radiation source incident on said graphene sheet. original
The transistor of claim 1, wherein said transistor has an 3 operating frequency range, and said electrical field current has a magnitude, and further wherein said magnitude is adjusted according to a desired said operating frequency range.
The transistor of claim 1 wherein said graphene sheet is made of a first graphene material, and further comprising a second layer of graphene that is made of a second graphene material, said second layer of graphene being placed over said graphene sheet.
The transistor of claim 1, further comprising an insulator layer disposed between said graphene sheet and said source, and further between said graphene sheet and said drain.
canceled
canceled
A method for achieving a transistor effect in a pixel from incident electromagnetic radiation, said method comprising the steps of: A) providing a source and a drain for said pixel; B) laying an insulator layer on said source and said drain; C) laminating at least one graphene layer on said insulator layer so that said graphene layer has a tapered width, from a maximum width to a minimum width; D) providing a discharging element in direct contact with said minimum width of said graphene layer; E) illuminatin q said qrap hene layer with incident radiation to free electrons from said qrap hene layer; and- E- F establishing an electric field in said graphene sheet, to prevent said electrons from said step E) from recombinin q with said qrap hene la v er, so that said electrons said within said graphene sheet -whic- are-tasleled move towards said discharging element. currently amended
The method of claim 8, wherein said electric field current has a magnitude and said method has a desired operating frequency, and further comprising the step of: F) adjusting said magnitude according to said desired operating frequency.
The method of claim 8, where said graphene sheet is made of a first graphene material, and further comprising the step of: G) placing a second layer of graphene placed over said graphene sheet, said second graphene layer being made of a second graphene material.
canceled
canceled
An antenna comprising a plurality of semiconductors, each said semiconductor comprising: a source; a drain; and7 a gate, said gate including a discharging element and a graphene sheet located between said source and said drain, said graphene sheet having a deer-eaig taperina width from a maximum width distal to said discharging element to a minimum width proximate to said gate electrode, said minimum width of said graphene sheet-in direct contract with said discharging element a nd7 said qrap hene sheet havin q a substantially zero band qap, said qrap hene sheet further receivin q incident radiation which im pinq es on said qrap hene sheet; said incident radiation freein q electrons in said qrap hene sheet due to said zero band qap; and, an electrical field in electrical communication with said graphene sheet, wherein said electric field p revents said electrons from said incident radiation from recombinin q with said qrap hene sheet, sa oheet- allowin q said electrons to move within said qrap hene sheet and which are tunneled towards said discharging element. currently amended
The antenna of claim 13 wherein said graphene sheet is made of a first graphene material, and further comprising: a second layer of graphene that is made of a second graphene material, said graph layer being placed over said graphene sheet.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based transistor (MOSFET/FET)
antenna comprising plurality of graphene-based semiconductor pixels
Materials described outside the worked examples.
graphene sheet (first graphene material)
second graphene layer (second graphene material)
Patent
Atlas literature
Patent
US 8,963,265Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A transistor, comprising: a source; a drain; a gate, said gate including a discharging element and a graphene sheet located between said source and said drain, said graphene sheet gate-elerode sid minimum wid aid graph neet in direct contact with said dischar ging element, said qrap hene sheet havin q a substantially zero band qap, said qrap hene sheet further receivin q incident radiation which im pinq es on said qrap hene sheet; said incident radiation freein q electrons in said qrap hene due to said zero band qap; an electrical field e aren t in electrical communication with said graphene sheet, to prevent said electrons from recombinin q with said qrap hene sheet; and, caid electric field said qrap hene sheet havin q a width with a decreasin q taper, from a maximum width distal to said dischar qinq element to a minimum width p roximate to said dischar qinq element, to allow said electrons to move towards said discharging element.
The transistor of claim 1 further comprising an electromagnetic radiation source incident on said graphene sheet. original
The transistor of claim 1, wherein said transistor has an 3 operating frequency range, and said electrical field current has a magnitude, and further wherein said magnitude is adjusted according to a desired said operating frequency range.
The transistor of claim 1 wherein said graphene sheet is made of a first graphene material, and further comprising a second layer of graphene that is made of a second graphene material, said second layer of graphene being placed over said graphene sheet.
The transistor of claim 1, further comprising an insulator layer disposed between said graphene sheet and said source, and further between said graphene sheet and said drain.
canceled
canceled
A method for achieving a transistor effect in a pixel from incident electromagnetic radiation, said method comprising the steps of: A) providing a source and a drain for said pixel; B) laying an insulator layer on said source and said drain; C) laminating at least one graphene layer on said insulator layer so that said graphene layer has a tapered width, from a maximum width to a minimum width; D) providing a discharging element in direct contact with said minimum width of said graphene layer; E) illuminatin q said qrap hene layer with incident radiation to free electrons from said qrap hene layer; and- E- F establishing an electric field in said graphene sheet, to prevent said electrons from said step E) from recombinin q with said qrap hene la v er, so that said electrons said within said graphene sheet -whic- are-tasleled move towards said discharging element. currently amended
The method of claim 8, wherein said electric field current has a magnitude and said method has a desired operating frequency, and further comprising the step of: F) adjusting said magnitude according to said desired operating frequency.
The method of claim 8, where said graphene sheet is made of a first graphene material, and further comprising the step of: G) placing a second layer of graphene placed over said graphene sheet, said second graphene layer being made of a second graphene material.
canceled
canceled
An antenna comprising a plurality of semiconductors, each said semiconductor comprising: a source; a drain; and7 a gate, said gate including a discharging element and a graphene sheet located between said source and said drain, said graphene sheet having a deer-eaig taperina width from a maximum width distal to said discharging element to a minimum width proximate to said gate electrode, said minimum width of said graphene sheet-in direct contract with said discharging element a nd7 said qrap hene sheet havin q a substantially zero band qap, said qrap hene sheet further receivin q incident radiation which im pinq es on said qrap hene sheet; said incident radiation freein q electrons in said qrap hene sheet due to said zero band qap; and, an electrical field in electrical communication with said graphene sheet, wherein said electric field p revents said electrons from said incident radiation from recombinin q with said qrap hene sheet, sa oheet- allowin q said electrons to move within said qrap hene sheet and which are tunneled towards said discharging element. currently amended
The antenna of claim 13 wherein said graphene sheet is made of a first graphene material, and further comprising: a second layer of graphene that is made of a second graphene material, said graph layer being placed over said graphene sheet.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based transistor (MOSFET/FET)
antenna comprising plurality of graphene-based semiconductor pixels
Materials described outside the worked examples.
graphene sheet (first graphene material)
second graphene layer (second graphene material)
Patent
Atlas literature
Patent
US 8,963,265Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A transistor, comprising: a source; a drain; a gate, said gate including a discharging element and a graphene sheet located between said source and said drain, said graphene sheet gate-elerode sid minimum wid aid graph neet in direct contact with said dischar ging element, said qrap hene sheet havin q a substantially zero band qap, said qrap hene sheet further receivin q incident radiation which im pinq es on said qrap hene sheet; said incident radiation freein q electrons in said qrap hene due to said zero band qap; an electrical field e aren t in electrical communication with said graphene sheet, to prevent said electrons from recombinin q with said qrap hene sheet; and, caid electric field said qrap hene sheet havin q a width with a decreasin q taper, from a maximum width distal to said dischar qinq element to a minimum width p roximate to said dischar qinq element, to allow said electrons to move towards said discharging element.
The transistor of claim 1 further comprising an electromagnetic radiation source incident on said graphene sheet. original
The transistor of claim 1, wherein said transistor has an 3 operating frequency range, and said electrical field current has a magnitude, and further wherein said magnitude is adjusted according to a desired said operating frequency range.
The transistor of claim 1 wherein said graphene sheet is made of a first graphene material, and further comprising a second layer of graphene that is made of a second graphene material, said second layer of graphene being placed over said graphene sheet.
The transistor of claim 1, further comprising an insulator layer disposed between said graphene sheet and said source, and further between said graphene sheet and said drain.
canceled
canceled
A method for achieving a transistor effect in a pixel from incident electromagnetic radiation, said method comprising the steps of: A) providing a source and a drain for said pixel; B) laying an insulator layer on said source and said drain; C) laminating at least one graphene layer on said insulator layer so that said graphene layer has a tapered width, from a maximum width to a minimum width; D) providing a discharging element in direct contact with said minimum width of said graphene layer; E) illuminatin q said qrap hene layer with incident radiation to free electrons from said qrap hene layer; and- E- F establishing an electric field in said graphene sheet, to prevent said electrons from said step E) from recombinin q with said qrap hene la v er, so that said electrons said within said graphene sheet -whic- are-tasleled move towards said discharging element. currently amended
The method of claim 8, wherein said electric field current has a magnitude and said method has a desired operating frequency, and further comprising the step of: F) adjusting said magnitude according to said desired operating frequency.
The method of claim 8, where said graphene sheet is made of a first graphene material, and further comprising the step of: G) placing a second layer of graphene placed over said graphene sheet, said second graphene layer being made of a second graphene material.
canceled
canceled
An antenna comprising a plurality of semiconductors, each said semiconductor comprising: a source; a drain; and7 a gate, said gate including a discharging element and a graphene sheet located between said source and said drain, said graphene sheet having a deer-eaig taperina width from a maximum width distal to said discharging element to a minimum width proximate to said gate electrode, said minimum width of said graphene sheet-in direct contract with said discharging element a nd7 said qrap hene sheet havin q a substantially zero band qap, said qrap hene sheet further receivin q incident radiation which im pinq es on said qrap hene sheet; said incident radiation freein q electrons in said qrap hene sheet due to said zero band qap; and, an electrical field in electrical communication with said graphene sheet, wherein said electric field p revents said electrons from said incident radiation from recombinin q with said qrap hene sheet, sa oheet- allowin q said electrons to move within said qrap hene sheet and which are tunneled towards said discharging element. currently amended
The antenna of claim 13 wherein said graphene sheet is made of a first graphene material, and further comprising: a second layer of graphene that is made of a second graphene material, said graph layer being placed over said graphene sheet.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based transistor (MOSFET/FET)
antenna comprising plurality of graphene-based semiconductor pixels
Materials described outside the worked examples.
graphene sheet (first graphene material)
second graphene layer (second graphene material)
Patent
Atlas literature
Patent
US 8,963,265Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A transistor, comprising: a source; a drain; a gate, said gate including a discharging element and a graphene sheet located between said source and said drain, said graphene sheet gate-elerode sid minimum wid aid graph neet in direct contact with said dischar ging element, said qrap hene sheet havin q a substantially zero band qap, said qrap hene sheet further receivin q incident radiation which im pinq es on said qrap hene sheet; said incident radiation freein q electrons in said qrap hene due to said zero band qap; an electrical field e aren t in electrical communication with said graphene sheet, to prevent said electrons from recombinin q with said qrap hene sheet; and, caid electric field said qrap hene sheet havin q a width with a decreasin q taper, from a maximum width distal to said dischar qinq element to a minimum width p roximate to said dischar qinq element, to allow said electrons to move towards said discharging element.
The transistor of claim 1 further comprising an electromagnetic radiation source incident on said graphene sheet. original
The transistor of claim 1, wherein said transistor has an 3 operating frequency range, and said electrical field current has a magnitude, and further wherein said magnitude is adjusted according to a desired said operating frequency range.
The transistor of claim 1 wherein said graphene sheet is made of a first graphene material, and further comprising a second layer of graphene that is made of a second graphene material, said second layer of graphene being placed over said graphene sheet.
The transistor of claim 1, further comprising an insulator layer disposed between said graphene sheet and said source, and further between said graphene sheet and said drain.
canceled
canceled
A method for achieving a transistor effect in a pixel from incident electromagnetic radiation, said method comprising the steps of: A) providing a source and a drain for said pixel; B) laying an insulator layer on said source and said drain; C) laminating at least one graphene layer on said insulator layer so that said graphene layer has a tapered width, from a maximum width to a minimum width; D) providing a discharging element in direct contact with said minimum width of said graphene layer; E) illuminatin q said qrap hene layer with incident radiation to free electrons from said qrap hene layer; and- E- F establishing an electric field in said graphene sheet, to prevent said electrons from said step E) from recombinin q with said qrap hene la v er, so that said electrons said within said graphene sheet -whic- are-tasleled move towards said discharging element. currently amended
The method of claim 8, wherein said electric field current has a magnitude and said method has a desired operating frequency, and further comprising the step of: F) adjusting said magnitude according to said desired operating frequency.
The method of claim 8, where said graphene sheet is made of a first graphene material, and further comprising the step of: G) placing a second layer of graphene placed over said graphene sheet, said second graphene layer being made of a second graphene material.
canceled
canceled
An antenna comprising a plurality of semiconductors, each said semiconductor comprising: a source; a drain; and7 a gate, said gate including a discharging element and a graphene sheet located between said source and said drain, said graphene sheet having a deer-eaig taperina width from a maximum width distal to said discharging element to a minimum width proximate to said gate electrode, said minimum width of said graphene sheet-in direct contract with said discharging element a nd7 said qrap hene sheet havin q a substantially zero band qap, said qrap hene sheet further receivin q incident radiation which im pinq es on said qrap hene sheet; said incident radiation freein q electrons in said qrap hene sheet due to said zero band qap; and, an electrical field in electrical communication with said graphene sheet, wherein said electric field p revents said electrons from said incident radiation from recombinin q with said qrap hene sheet, sa oheet- allowin q said electrons to move within said qrap hene sheet and which are tunneled towards said discharging element. currently amended
The antenna of claim 13 wherein said graphene sheet is made of a first graphene material, and further comprising: a second layer of graphene that is made of a second graphene material, said graph layer being placed over said graphene sheet.
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based transistor (MOSFET/FET)
antenna comprising plurality of graphene-based semiconductor pixels
Materials described outside the worked examples.
graphene sheet (first graphene material)
second graphene layer (second graphene material)
insulator layer
insulator layer
insulator layer
insulator layer