Patent
US 10,761,043GRAPHENE-BASED NANOPORE AND NANOSTRUCTURE DEVICES AND METHODS FOR MACROMOLECULAR ANALYSIS
Marija Drndic
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,761,043Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
M. Rhee; M. A. Burns Trends Biotech 2006, 24, 580.
K. Healy; B. Schiedt; A. P. Morrison Nanomedicine 2007, 2, 875.
C. Dekker Nat Nanotechnol 2007 2, 209.
D. Branton; D. W. Deamer; A. Marziali; H. Bayley; S. A. Benner; T. Butler; M. Di Ventra; S. Garaj; A. Hibbs; X. Huang; S. B. Jovanovich; P. S. Krstic; S. Lindsay; X. S. Ling; C. H. Mastrangelo; A. Meller; J. S. Oliver; Y. V. Pershin; J. M.Ramsey; R. Riehn; G. V. Soni; V. Tabard-Cossa; M. Wanunu; M. Wiggin; J. A. Schloss Nat Biotechnol 2008, 10, 1146.
Wanunu M., Soni G.V., Meller A. (2009) in Springer Handbook of Single-Molecule Biophysics (ed. A. Van O ijen), Springer Publishing, New York.
L.-Q. Gu; J. W. Shim Analyst 2010, 135, 441.
Z. S. Siwy, S. Howorka, Chem Soc Rev, 2010, 39, 1115-1132 8. A. Meller; D. Branton Electrophoresis 2002, 23, 2563.
J. J. Kasianowicz; E. Brandin; D. Branton; D. W. Deamer Proc Nat Acad Sci 1996, 93, 13770.
Y. Astier; O. Braha; H. Bayley JAm Chem Soc 2006, 128, 1705.
J. Clarke; H.-C. Wu; L. Jayasinghe; A. Patel; S. Reid; H. Bayley Nature Nano 2009, 4, 265.
M. Zwolak; M. Di Ventra Nano Lett 2005, 5, 421.
H. W. Ch. Postma Nano Lett., 2010, 10, 420.
J. Li; D. Stein; C. M c Mullan; D. Branton; M. J. Aziz; J. A. Golovchenko Nature 2001, 412,
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanopore device
graphene nanoribbon nanopore device with insulating layer
Materials described outside the worked examples.
graphene
silicon nitride
Measurements and analyses referenced in the patent, with their drawing references.
durability and signal-to-noise characteristics. These methods suitably include applying, to a graphene sheet that places two or more electrical leads into electronic contact with one another one or more of thermal annealing, current annealing, a plasma, ozone,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 200–400 pA | — |
Thickness | 0.1–10 nm |
Patent
Atlas literature
Patent
US 10,761,043Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
M. Rhee; M. A. Burns Trends Biotech 2006, 24, 580.
K. Healy; B. Schiedt; A. P. Morrison Nanomedicine 2007, 2, 875.
C. Dekker Nat Nanotechnol 2007 2, 209.
D. Branton; D. W. Deamer; A. Marziali; H. Bayley; S. A. Benner; T. Butler; M. Di Ventra; S. Garaj; A. Hibbs; X. Huang; S. B. Jovanovich; P. S. Krstic; S. Lindsay; X. S. Ling; C. H. Mastrangelo; A. Meller; J. S. Oliver; Y. V. Pershin; J. M.Ramsey; R. Riehn; G. V. Soni; V. Tabard-Cossa; M. Wanunu; M. Wiggin; J. A. Schloss Nat Biotechnol 2008, 10, 1146.
Wanunu M., Soni G.V., Meller A. (2009) in Springer Handbook of Single-Molecule Biophysics (ed. A. Van O ijen), Springer Publishing, New York.
L.-Q. Gu; J. W. Shim Analyst 2010, 135, 441.
Z. S. Siwy, S. Howorka, Chem Soc Rev, 2010, 39, 1115-1132 8. A. Meller; D. Branton Electrophoresis 2002, 23, 2563.
J. J. Kasianowicz; E. Brandin; D. Branton; D. W. Deamer Proc Nat Acad Sci 1996, 93, 13770.
Y. Astier; O. Braha; H. Bayley JAm Chem Soc 2006, 128, 1705.
J. Clarke; H.-C. Wu; L. Jayasinghe; A. Patel; S. Reid; H. Bayley Nature Nano 2009, 4, 265.
M. Zwolak; M. Di Ventra Nano Lett 2005, 5, 421.
H. W. Ch. Postma Nano Lett., 2010, 10, 420.
J. Li; D. Stein; C. M c Mullan; D. Branton; M. J. Aziz; J. A. Golovchenko Nature 2001, 412,
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanopore device
graphene nanoribbon nanopore device with insulating layer
Materials described outside the worked examples.
graphene
silicon nitride
Measurements and analyses referenced in the patent, with their drawing references.
durability and signal-to-noise characteristics. These methods suitably include applying, to a graphene sheet that places two or more electrical leads into electronic contact with one another one or more of thermal annealing, current annealing, a plasma, ozone,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 200–400 pA | — |
Thickness | 0.1–10 nm |
Patent
Atlas literature
Patent
US 10,761,043Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
M. Rhee; M. A. Burns Trends Biotech 2006, 24, 580.
K. Healy; B. Schiedt; A. P. Morrison Nanomedicine 2007, 2, 875.
C. Dekker Nat Nanotechnol 2007 2, 209.
D. Branton; D. W. Deamer; A. Marziali; H. Bayley; S. A. Benner; T. Butler; M. Di Ventra; S. Garaj; A. Hibbs; X. Huang; S. B. Jovanovich; P. S. Krstic; S. Lindsay; X. S. Ling; C. H. Mastrangelo; A. Meller; J. S. Oliver; Y. V. Pershin; J. M.Ramsey; R. Riehn; G. V. Soni; V. Tabard-Cossa; M. Wanunu; M. Wiggin; J. A. Schloss Nat Biotechnol 2008, 10, 1146.
Wanunu M., Soni G.V., Meller A. (2009) in Springer Handbook of Single-Molecule Biophysics (ed. A. Van O ijen), Springer Publishing, New York.
L.-Q. Gu; J. W. Shim Analyst 2010, 135, 441.
Z. S. Siwy, S. Howorka, Chem Soc Rev, 2010, 39, 1115-1132 8. A. Meller; D. Branton Electrophoresis 2002, 23, 2563.
J. J. Kasianowicz; E. Brandin; D. Branton; D. W. Deamer Proc Nat Acad Sci 1996, 93, 13770.
Y. Astier; O. Braha; H. Bayley JAm Chem Soc 2006, 128, 1705.
J. Clarke; H.-C. Wu; L. Jayasinghe; A. Patel; S. Reid; H. Bayley Nature Nano 2009, 4, 265.
M. Zwolak; M. Di Ventra Nano Lett 2005, 5, 421.
H. W. Ch. Postma Nano Lett., 2010, 10, 420.
J. Li; D. Stein; C. M c Mullan; D. Branton; M. J. Aziz; J. A. Golovchenko Nature 2001, 412,
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanopore device
graphene nanoribbon nanopore device with insulating layer
Materials described outside the worked examples.
graphene
silicon nitride
Measurements and analyses referenced in the patent, with their drawing references.
durability and signal-to-noise characteristics. These methods suitably include applying, to a graphene sheet that places two or more electrical leads into electronic contact with one another one or more of thermal annealing, current annealing, a plasma, ozone,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 200–400 pA | — |
Thickness | 0.1–10 nm |
Patent
Atlas literature
Patent
US 10,761,043Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
M. Rhee; M. A. Burns Trends Biotech 2006, 24, 580.
K. Healy; B. Schiedt; A. P. Morrison Nanomedicine 2007, 2, 875.
C. Dekker Nat Nanotechnol 2007 2, 209.
D. Branton; D. W. Deamer; A. Marziali; H. Bayley; S. A. Benner; T. Butler; M. Di Ventra; S. Garaj; A. Hibbs; X. Huang; S. B. Jovanovich; P. S. Krstic; S. Lindsay; X. S. Ling; C. H. Mastrangelo; A. Meller; J. S. Oliver; Y. V. Pershin; J. M.Ramsey; R. Riehn; G. V. Soni; V. Tabard-Cossa; M. Wanunu; M. Wiggin; J. A. Schloss Nat Biotechnol 2008, 10, 1146.
Wanunu M., Soni G.V., Meller A. (2009) in Springer Handbook of Single-Molecule Biophysics (ed. A. Van O ijen), Springer Publishing, New York.
L.-Q. Gu; J. W. Shim Analyst 2010, 135, 441.
Z. S. Siwy, S. Howorka, Chem Soc Rev, 2010, 39, 1115-1132 8. A. Meller; D. Branton Electrophoresis 2002, 23, 2563.
J. J. Kasianowicz; E. Brandin; D. Branton; D. W. Deamer Proc Nat Acad Sci 1996, 93, 13770.
Y. Astier; O. Braha; H. Bayley JAm Chem Soc 2006, 128, 1705.
J. Clarke; H.-C. Wu; L. Jayasinghe; A. Patel; S. Reid; H. Bayley Nature Nano 2009, 4, 265.
M. Zwolak; M. Di Ventra Nano Lett 2005, 5, 421.
H. W. Ch. Postma Nano Lett., 2010, 10, 420.
J. Li; D. Stein; C. M c Mullan; D. Branton; M. J. Aziz; J. A. Golovchenko Nature 2001, 412,
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanopore device
graphene nanoribbon nanopore device with insulating layer
Materials described outside the worked examples.
graphene
silicon nitride
Measurements and analyses referenced in the patent, with their drawing references.
durability and signal-to-noise characteristics. These methods suitably include applying, to a graphene sheet that places two or more electrical leads into electronic contact with one another one or more of thermal annealing, current annealing, a plasma, ozone,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 200–400 pA | — |
Thickness | 0.1–10 nm |
multi-layer graphene/insulator sandwich nanopore device
silicon oxide
boron nitride
BN
aluminum oxide
Al₂O₃
hafnium oxide
HfO₂
titanium oxide
TiO₂
hydrogen silsesquioxane
HSQ
silicon
Si
| — |
Thickness | 0.1–30 nm | — |
Thickness | 0.1–5000000 nm | — |
Thickness | 0.1–1000 nm | — |
Thickness | 10–50 nm | — |
Duration | 0.1–43200 s | — |
Duration | 5–43200 s | — |
Thickness | 5–50 nm | — |
Thickness | 10–20 nm | — |
Thickness | 18–22 nm | — |
Thickness | 1.1–5 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 2–8 nm | — |
Thickness | 1–500 nm | — |
Thickness | 49–251 nm | — |
Thickness | 97–187 nm | — |
Thickness | 100–500000 nm | — |
Thickness | 1–1000 nm | — |
Thickness | 0.1–500 nm | — |
Thickness | 5–15 nm | — |
Thickness | 5–10 mm | — |
Thickness | 5.5–8 nm | — |
Thickness | 1.1–1.5 nm | — |
Thickness | 1.1–4 nm | — |
Thickness | 1.1–2 nm | — |
Thickness | 0.3–5 nm | — |
Temperature | 300–400 °C | — |
Duration | 1–60 seconds | — |
Thickness | 10–15 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 314 nm | — |
Duration | ≥ 60 minutes | — |
Thickness | 10–30 nm | — |
Thickness | 1–10 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 20 nm | — |
multi-layer graphene/insulator sandwich nanopore device
silicon oxide
boron nitride
BN
aluminum oxide
Al₂O₃
hafnium oxide
HfO₂
titanium oxide
TiO₂
hydrogen silsesquioxane
HSQ
silicon
Si
| — |
Thickness | 0.1–30 nm | — |
Thickness | 0.1–5000000 nm | — |
Thickness | 0.1–1000 nm | — |
Thickness | 10–50 nm | — |
Duration | 0.1–43200 s | — |
Duration | 5–43200 s | — |
Thickness | 5–50 nm | — |
Thickness | 10–20 nm | — |
Thickness | 18–22 nm | — |
Thickness | 1.1–5 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 2–8 nm | — |
Thickness | 1–500 nm | — |
Thickness | 49–251 nm | — |
Thickness | 97–187 nm | — |
Thickness | 100–500000 nm | — |
Thickness | 1–1000 nm | — |
Thickness | 0.1–500 nm | — |
Thickness | 5–15 nm | — |
Thickness | 5–10 mm | — |
Thickness | 5.5–8 nm | — |
Thickness | 1.1–1.5 nm | — |
Thickness | 1.1–4 nm | — |
Thickness | 1.1–2 nm | — |
Thickness | 0.3–5 nm | — |
Temperature | 300–400 °C | — |
Duration | 1–60 seconds | — |
Thickness | 10–15 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 314 nm | — |
Duration | ≥ 60 minutes | — |
Thickness | 10–30 nm | — |
Thickness | 1–10 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 20 nm | — |
multi-layer graphene/insulator sandwich nanopore device
silicon oxide
boron nitride
BN
aluminum oxide
Al₂O₃
hafnium oxide
HfO₂
titanium oxide
TiO₂
hydrogen silsesquioxane
HSQ
silicon
Si
| — |
Thickness | 0.1–30 nm | — |
Thickness | 0.1–5000000 nm | — |
Thickness | 0.1–1000 nm | — |
Thickness | 10–50 nm | — |
Duration | 0.1–43200 s | — |
Duration | 5–43200 s | — |
Thickness | 5–50 nm | — |
Thickness | 10–20 nm | — |
Thickness | 18–22 nm | — |
Thickness | 1.1–5 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 2–8 nm | — |
Thickness | 1–500 nm | — |
Thickness | 49–251 nm | — |
Thickness | 97–187 nm | — |
Thickness | 100–500000 nm | — |
Thickness | 1–1000 nm | — |
Thickness | 0.1–500 nm | — |
Thickness | 5–15 nm | — |
Thickness | 5–10 mm | — |
Thickness | 5.5–8 nm | — |
Thickness | 1.1–1.5 nm | — |
Thickness | 1.1–4 nm | — |
Thickness | 1.1–2 nm | — |
Thickness | 0.3–5 nm | — |
Temperature | 300–400 °C | — |
Duration | 1–60 seconds | — |
Thickness | 10–15 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 314 nm | — |
Duration | ≥ 60 minutes | — |
Thickness | 10–30 nm | — |
Thickness | 1–10 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 20 nm | — |
multi-layer graphene/insulator sandwich nanopore device
silicon oxide
boron nitride
BN
aluminum oxide
Al₂O₃
hafnium oxide
HfO₂
titanium oxide
TiO₂
hydrogen silsesquioxane
HSQ
silicon
Si
| — |
Thickness | 0.1–30 nm | — |
Thickness | 0.1–5000000 nm | — |
Thickness | 0.1–1000 nm | — |
Thickness | 10–50 nm | — |
Duration | 0.1–43200 s | — |
Duration | 5–43200 s | — |
Thickness | 5–50 nm | — |
Thickness | 10–20 nm | — |
Thickness | 18–22 nm | — |
Thickness | 1.1–5 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 2–8 nm | — |
Thickness | 1–500 nm | — |
Thickness | 49–251 nm | — |
Thickness | 97–187 nm | — |
Thickness | 100–500000 nm | — |
Thickness | 1–1000 nm | — |
Thickness | 0.1–500 nm | — |
Thickness | 5–15 nm | — |
Thickness | 5–10 mm | — |
Thickness | 5.5–8 nm | — |
Thickness | 1.1–1.5 nm | — |
Thickness | 1.1–4 nm | — |
Thickness | 1.1–2 nm | — |
Thickness | 0.3–5 nm | — |
Temperature | 300–400 °C | — |
Duration | 1–60 seconds | — |
Thickness | 10–15 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 314 nm | — |
Duration | ≥ 60 minutes | — |
Thickness | 10–30 nm | — |
Thickness | 1–10 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 20 nm | — |