A graphene-based switching device, comprising: a bottom gate electrode disposed on a substrate; a bottom gate dielectric layer disposed over the bottom electrode, the lower dielectric layer having ferroelectric and piezoelectric properties; a bi-layer graphene disposed over the bottom gate dielectric layer; and a top gate electrode disposed over the bi-layer graphene, wherein an applied voltage across the top and bottom gate electrodes results in subjecting the bilayer graphene to an electric field while simultaneously subjecting the bi-layer graphene of graphene to an applied strain that reduces an interlayer spacing between the bi-layer graphene, thereby creating a bandgap in the bi-layer graphene.

A graphene-based switching device, comprising: a bottom gate electrode disposed on a substrate; a bottom gate dielectric layer disposed over the bottom electrode, the lower dielectric layer having ferroelectric and piezoelectric properties; a bi-layer graphene disposed over the bottom gate dielectric layer; and a top gate electrode disposed over the bi-layer graphene, wherein an applied voltage across the top and bottom gate electrodes results in subjecting the bilayer graphene to an electric field while simultaneously subjecting the bi-layer graphene of graphene to an applied strain that reduces an interlayer spacing between the bi-layer graphene, thereby creating a bandgap in the bi-layer graphene.

A graphene-based switching device, comprising: a bottom gate electrode disposed on a substrate; a bottom gate dielectric layer disposed over the bottom electrode, the lower dielectric layer having ferroelectric and piezoelectric properties; a bi-layer graphene disposed over the bottom gate dielectric layer; and a top gate electrode disposed over the bi-layer graphene, wherein an applied voltage across the top and bottom gate electrodes results in subjecting the bilayer graphene to an electric field while simultaneously subjecting the bi-layer graphene of graphene to an applied strain that reduces an interlayer spacing between the bi-layer graphene, thereby creating a bandgap in the bi-layer graphene.

A graphene-based switching device, comprising: a bottom gate electrode disposed on a substrate; a bottom gate dielectric layer disposed over the bottom electrode, the lower dielectric layer having ferroelectric and piezoelectric properties; a bi-layer graphene disposed over the bottom gate dielectric layer; and a top gate electrode disposed over the bi-layer graphene, wherein an applied voltage across the top and bottom gate electrodes results in subjecting the bilayer graphene to an electric field while simultaneously subjecting the bi-layer graphene of graphene to an applied strain that reduces an interlayer spacing between the bi-layer graphene, thereby creating a bandgap in the bi-layer graphene.