Patent
US 10,006,819GRAPHENE-BASED TOUCH SENSOR DEVICE USING TRIBOELECTRICITY AND METHOD FOR FABRICATING THE DEVICE
Sang Woo KIM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,006,819Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic perspective view of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present …
FIG. 2 illustrates a schematic side elevation view of a graphene-based touch sensor 5 using a triboelectric effect according to an embodiment of the present …
FIG. 3C illustrate a driving mechanism of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present disclosure. [0030]
FIG. 4 illustrates a flowchart illustrating a method for manufacturing a graphene-based touch sensor using a triboelectric effect according to an embodiment of …
FIG. 5 shows graphs illustrating a current change of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present …
FIG. 6 shows graphs illustrating a current change of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present …
FIG. 7 shows graphs illustrating a change in current based on a pressure applied to a graphene-based touch sensor using a triboelectric effect according to an …
FIG. 8 illustrates a graphene-based touch sensor using a triboelectric effect according to a further embodiment of the present disclosure. [0035]
FIG. 9 shows a flowchart illustrating a method for manufacturing a graphene-based touch sensor using a triboelectric effect according to a further embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A The graphene based touch sensor device using triboelectric effoct, the device of claim 19 comprising: a substrate; a first electrode layer disposed on the substrate; a graphene channel layer disposed on the substrate, wherein the graphene channel layer is flush with the first electrode layer, and is spaced from the first electrode layer; a gate dielectric layer in partial contact with the electrode layer and the graphene channel layer respectively; source and drain electrodes formed on both opposing ends of the graphene channel layer respectively; and a triboelectric layer formed on the first electrode layer, wherein the triboelectric layer generates a triboelectric potential via contact of an external friction material therewith, wherein the contact of the external friction material is detected based on a current change in the graphene channel layer due to the triboelectric potential applied thereto.
The device of claim 1, wherein the substrate is a flexible substrate.
The device of claim 1, wherein the gate dielectric layer induces a gate characteristic for the graphene channel layer.
The device of claim 1, wherein the gate dielectric layer includes a two- dimensional insulating material or an ion-gel.
The device of claim 1, wherein the triboelectric layer is made of a material 2 Docket No. 4140-1004 located in a center region of a triboelectric series.
A The method for manufacturing a graphene based touch sensor device using triboelectric effect, of claim 20 the method comprising: providing a substrate; depositing a first electrode layer on the substrate; patterning the first electrode layer using a first photolithography process; transferring graphene onto the substrate to form a graphene layer such that the graphene layer is separated from the first electrode layer; forming source and drain electrodes partially on the graphene layer using a second photolithography process; etching the graphene layer using a third photolithography process to form a graphene channel layer; forming a gate dielectric layer so as to be partially in contact with the first electrode layer and the graphene channel layer respectively; and attaching a triboelectric layer on the first electrode layer.
The method of claim 6, wherein the first photolithography process is a positive photolithography process.
The method of claim 6, wherein the second photolithography process is a negative photolithography process.
The method of claim 6, wherein the third photolithography process is a positive photolithography process.
A The graphene based touch sensor device using triboelectric effect, the device of claim 19 comprising: a substrate; a graphene channel layer disposed on the substrate; 3 Docket No. 4140-1004 a gate dielectric layer disposed on the graphene channel layer; source and drain electrodes disposed on the graphene channel layer on both opposing ends of the graphene channel layer respectively, wherein the source and drain electrodes are separated from the gate dielectric layer; a further electrode layer disposed on the gate dielectric layer; and a triboelectric layer disposed on the further electrode layer, wherein the triboelectric layer generates a triboelectric potential via contact of an external friction material therewith, wherein the contact of the external friction material is detected based on a current change in the graphene channel layer due to the triboelectric potential applied thereto.
The device of claim 10, wherein the substrate is a flexible substrate.
The device of claim 10, wherein the gate dielectric layer induces a gate characteristic for the graphene channel layer.
The device of claim 10, wherein the gate dielectric layer includes a two- dimensional insulating material or an ion-gel.
The device of claim 10, wherein the triboelectric layer is made of a material located in a center region of a triboelectric series.
A The method for manufacturing a graphene based touch sensor device using triboelectric effect, the method of claim 20 comprising: providing a substrate; transferring graphene onto the substrate to form a graphene layer; forming source and drain electrodes partially on the graphene layer using a first photolithography process; etching the graphene layer using a second photolithography process to form a graphene channel layer; 4 Docket No. 4140-1004 forming a gate dielectric layer on the graphene channel layer; depositing a further electrode layer on the gate dielectric layer; patterning the further electrode layer using a third photolithography process; and attaching a triboelectric layer on the patterned further electrode layer.
The method of claim 15, wherein the third photolithography process is a positive photolithography process.
The method of claim 15, wherein the first photolithography process is a negative photolithography process.
The method of claim 15, wherein the second photolithography process is a positive photolithography process.
A graphene-based touch sensor device using triboelectric effect comprising: a substrate; a graphene channel layer disposed on the substrate; a gate dielectric layer; a source and drain electrodes; and a triboelectric layer, wherein the triboelectric layer generates a triboelectric potential via contact of an external friction material therewith, wherein the contact of the external friction material is detected based on a current change in the graphene channel layer due to the triboelectric potential applied thereto.
A method for manufacturing a graphene-based touch sensor device using triboelectric effect comprising: providing a substrate; transferring graphene onto the substrate to form a graphene layer; forming source and drain electrodes partially on the graphene layer; 5 Docket No. 4140-1004 etching the graphene layer; forming a gate dielectric layer on an electrode layer; and attaching a triboelectric layer on the electrode layer. 6
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based touch sensor device (lateral first-electrode configuration)
Materials described outside the worked examples.
graphene
gate dielectric
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–5 nm | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,006,819Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic perspective view of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present …
FIG. 2 illustrates a schematic side elevation view of a graphene-based touch sensor 5 using a triboelectric effect according to an embodiment of the present …
FIG. 3C illustrate a driving mechanism of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present disclosure. [0030]
FIG. 4 illustrates a flowchart illustrating a method for manufacturing a graphene-based touch sensor using a triboelectric effect according to an embodiment of …
FIG. 5 shows graphs illustrating a current change of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present …
FIG. 6 shows graphs illustrating a current change of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present …
FIG. 7 shows graphs illustrating a change in current based on a pressure applied to a graphene-based touch sensor using a triboelectric effect according to an …
FIG. 8 illustrates a graphene-based touch sensor using a triboelectric effect according to a further embodiment of the present disclosure. [0035]
FIG. 9 shows a flowchart illustrating a method for manufacturing a graphene-based touch sensor using a triboelectric effect according to a further embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A The graphene based touch sensor device using triboelectric effoct, the device of claim 19 comprising: a substrate; a first electrode layer disposed on the substrate; a graphene channel layer disposed on the substrate, wherein the graphene channel layer is flush with the first electrode layer, and is spaced from the first electrode layer; a gate dielectric layer in partial contact with the electrode layer and the graphene channel layer respectively; source and drain electrodes formed on both opposing ends of the graphene channel layer respectively; and a triboelectric layer formed on the first electrode layer, wherein the triboelectric layer generates a triboelectric potential via contact of an external friction material therewith, wherein the contact of the external friction material is detected based on a current change in the graphene channel layer due to the triboelectric potential applied thereto.
The device of claim 1, wherein the substrate is a flexible substrate.
The device of claim 1, wherein the gate dielectric layer induces a gate characteristic for the graphene channel layer.
The device of claim 1, wherein the gate dielectric layer includes a two- dimensional insulating material or an ion-gel.
The device of claim 1, wherein the triboelectric layer is made of a material 2 Docket No. 4140-1004 located in a center region of a triboelectric series.
A The method for manufacturing a graphene based touch sensor device using triboelectric effect, of claim 20 the method comprising: providing a substrate; depositing a first electrode layer on the substrate; patterning the first electrode layer using a first photolithography process; transferring graphene onto the substrate to form a graphene layer such that the graphene layer is separated from the first electrode layer; forming source and drain electrodes partially on the graphene layer using a second photolithography process; etching the graphene layer using a third photolithography process to form a graphene channel layer; forming a gate dielectric layer so as to be partially in contact with the first electrode layer and the graphene channel layer respectively; and attaching a triboelectric layer on the first electrode layer.
The method of claim 6, wherein the first photolithography process is a positive photolithography process.
The method of claim 6, wherein the second photolithography process is a negative photolithography process.
The method of claim 6, wherein the third photolithography process is a positive photolithography process.
A The graphene based touch sensor device using triboelectric effect, the device of claim 19 comprising: a substrate; a graphene channel layer disposed on the substrate; 3 Docket No. 4140-1004 a gate dielectric layer disposed on the graphene channel layer; source and drain electrodes disposed on the graphene channel layer on both opposing ends of the graphene channel layer respectively, wherein the source and drain electrodes are separated from the gate dielectric layer; a further electrode layer disposed on the gate dielectric layer; and a triboelectric layer disposed on the further electrode layer, wherein the triboelectric layer generates a triboelectric potential via contact of an external friction material therewith, wherein the contact of the external friction material is detected based on a current change in the graphene channel layer due to the triboelectric potential applied thereto.
The device of claim 10, wherein the substrate is a flexible substrate.
The device of claim 10, wherein the gate dielectric layer induces a gate characteristic for the graphene channel layer.
The device of claim 10, wherein the gate dielectric layer includes a two- dimensional insulating material or an ion-gel.
The device of claim 10, wherein the triboelectric layer is made of a material located in a center region of a triboelectric series.
A The method for manufacturing a graphene based touch sensor device using triboelectric effect, the method of claim 20 comprising: providing a substrate; transferring graphene onto the substrate to form a graphene layer; forming source and drain electrodes partially on the graphene layer using a first photolithography process; etching the graphene layer using a second photolithography process to form a graphene channel layer; 4 Docket No. 4140-1004 forming a gate dielectric layer on the graphene channel layer; depositing a further electrode layer on the gate dielectric layer; patterning the further electrode layer using a third photolithography process; and attaching a triboelectric layer on the patterned further electrode layer.
The method of claim 15, wherein the third photolithography process is a positive photolithography process.
The method of claim 15, wherein the first photolithography process is a negative photolithography process.
The method of claim 15, wherein the second photolithography process is a positive photolithography process.
A graphene-based touch sensor device using triboelectric effect comprising: a substrate; a graphene channel layer disposed on the substrate; a gate dielectric layer; a source and drain electrodes; and a triboelectric layer, wherein the triboelectric layer generates a triboelectric potential via contact of an external friction material therewith, wherein the contact of the external friction material is detected based on a current change in the graphene channel layer due to the triboelectric potential applied thereto.
A method for manufacturing a graphene-based touch sensor device using triboelectric effect comprising: providing a substrate; transferring graphene onto the substrate to form a graphene layer; forming source and drain electrodes partially on the graphene layer; 5 Docket No. 4140-1004 etching the graphene layer; forming a gate dielectric layer on an electrode layer; and attaching a triboelectric layer on the electrode layer. 6
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based touch sensor device (lateral first-electrode configuration)
Materials described outside the worked examples.
graphene
gate dielectric
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–5 nm | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,006,819Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic perspective view of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present …
FIG. 2 illustrates a schematic side elevation view of a graphene-based touch sensor 5 using a triboelectric effect according to an embodiment of the present …
FIG. 3C illustrate a driving mechanism of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present disclosure. [0030]
FIG. 4 illustrates a flowchart illustrating a method for manufacturing a graphene-based touch sensor using a triboelectric effect according to an embodiment of …
FIG. 5 shows graphs illustrating a current change of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present …
FIG. 6 shows graphs illustrating a current change of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present …
FIG. 7 shows graphs illustrating a change in current based on a pressure applied to a graphene-based touch sensor using a triboelectric effect according to an …
FIG. 8 illustrates a graphene-based touch sensor using a triboelectric effect according to a further embodiment of the present disclosure. [0035]
FIG. 9 shows a flowchart illustrating a method for manufacturing a graphene-based touch sensor using a triboelectric effect according to a further embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A The graphene based touch sensor device using triboelectric effoct, the device of claim 19 comprising: a substrate; a first electrode layer disposed on the substrate; a graphene channel layer disposed on the substrate, wherein the graphene channel layer is flush with the first electrode layer, and is spaced from the first electrode layer; a gate dielectric layer in partial contact with the electrode layer and the graphene channel layer respectively; source and drain electrodes formed on both opposing ends of the graphene channel layer respectively; and a triboelectric layer formed on the first electrode layer, wherein the triboelectric layer generates a triboelectric potential via contact of an external friction material therewith, wherein the contact of the external friction material is detected based on a current change in the graphene channel layer due to the triboelectric potential applied thereto.
The device of claim 1, wherein the substrate is a flexible substrate.
The device of claim 1, wherein the gate dielectric layer induces a gate characteristic for the graphene channel layer.
The device of claim 1, wherein the gate dielectric layer includes a two- dimensional insulating material or an ion-gel.
The device of claim 1, wherein the triboelectric layer is made of a material 2 Docket No. 4140-1004 located in a center region of a triboelectric series.
A The method for manufacturing a graphene based touch sensor device using triboelectric effect, of claim 20 the method comprising: providing a substrate; depositing a first electrode layer on the substrate; patterning the first electrode layer using a first photolithography process; transferring graphene onto the substrate to form a graphene layer such that the graphene layer is separated from the first electrode layer; forming source and drain electrodes partially on the graphene layer using a second photolithography process; etching the graphene layer using a third photolithography process to form a graphene channel layer; forming a gate dielectric layer so as to be partially in contact with the first electrode layer and the graphene channel layer respectively; and attaching a triboelectric layer on the first electrode layer.
The method of claim 6, wherein the first photolithography process is a positive photolithography process.
The method of claim 6, wherein the second photolithography process is a negative photolithography process.
The method of claim 6, wherein the third photolithography process is a positive photolithography process.
A The graphene based touch sensor device using triboelectric effect, the device of claim 19 comprising: a substrate; a graphene channel layer disposed on the substrate; 3 Docket No. 4140-1004 a gate dielectric layer disposed on the graphene channel layer; source and drain electrodes disposed on the graphene channel layer on both opposing ends of the graphene channel layer respectively, wherein the source and drain electrodes are separated from the gate dielectric layer; a further electrode layer disposed on the gate dielectric layer; and a triboelectric layer disposed on the further electrode layer, wherein the triboelectric layer generates a triboelectric potential via contact of an external friction material therewith, wherein the contact of the external friction material is detected based on a current change in the graphene channel layer due to the triboelectric potential applied thereto.
The device of claim 10, wherein the substrate is a flexible substrate.
The device of claim 10, wherein the gate dielectric layer induces a gate characteristic for the graphene channel layer.
The device of claim 10, wherein the gate dielectric layer includes a two- dimensional insulating material or an ion-gel.
The device of claim 10, wherein the triboelectric layer is made of a material located in a center region of a triboelectric series.
A The method for manufacturing a graphene based touch sensor device using triboelectric effect, the method of claim 20 comprising: providing a substrate; transferring graphene onto the substrate to form a graphene layer; forming source and drain electrodes partially on the graphene layer using a first photolithography process; etching the graphene layer using a second photolithography process to form a graphene channel layer; 4 Docket No. 4140-1004 forming a gate dielectric layer on the graphene channel layer; depositing a further electrode layer on the gate dielectric layer; patterning the further electrode layer using a third photolithography process; and attaching a triboelectric layer on the patterned further electrode layer.
The method of claim 15, wherein the third photolithography process is a positive photolithography process.
The method of claim 15, wherein the first photolithography process is a negative photolithography process.
The method of claim 15, wherein the second photolithography process is a positive photolithography process.
A graphene-based touch sensor device using triboelectric effect comprising: a substrate; a graphene channel layer disposed on the substrate; a gate dielectric layer; a source and drain electrodes; and a triboelectric layer, wherein the triboelectric layer generates a triboelectric potential via contact of an external friction material therewith, wherein the contact of the external friction material is detected based on a current change in the graphene channel layer due to the triboelectric potential applied thereto.
A method for manufacturing a graphene-based touch sensor device using triboelectric effect comprising: providing a substrate; transferring graphene onto the substrate to form a graphene layer; forming source and drain electrodes partially on the graphene layer; 5 Docket No. 4140-1004 etching the graphene layer; forming a gate dielectric layer on an electrode layer; and attaching a triboelectric layer on the electrode layer. 6
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based touch sensor device (lateral first-electrode configuration)
Materials described outside the worked examples.
graphene
gate dielectric
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–5 nm | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,006,819Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic perspective view of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present …
FIG. 2 illustrates a schematic side elevation view of a graphene-based touch sensor 5 using a triboelectric effect according to an embodiment of the present …
FIG. 3C illustrate a driving mechanism of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present disclosure. [0030]
FIG. 4 illustrates a flowchart illustrating a method for manufacturing a graphene-based touch sensor using a triboelectric effect according to an embodiment of …
FIG. 5 shows graphs illustrating a current change of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present …
FIG. 6 shows graphs illustrating a current change of a graphene-based touch sensor using a triboelectric effect according to an embodiment of the present …
FIG. 7 shows graphs illustrating a change in current based on a pressure applied to a graphene-based touch sensor using a triboelectric effect according to an …
FIG. 8 illustrates a graphene-based touch sensor using a triboelectric effect according to a further embodiment of the present disclosure. [0035]
FIG. 9 shows a flowchart illustrating a method for manufacturing a graphene-based touch sensor using a triboelectric effect according to a further embodiment of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A The graphene based touch sensor device using triboelectric effoct, the device of claim 19 comprising: a substrate; a first electrode layer disposed on the substrate; a graphene channel layer disposed on the substrate, wherein the graphene channel layer is flush with the first electrode layer, and is spaced from the first electrode layer; a gate dielectric layer in partial contact with the electrode layer and the graphene channel layer respectively; source and drain electrodes formed on both opposing ends of the graphene channel layer respectively; and a triboelectric layer formed on the first electrode layer, wherein the triboelectric layer generates a triboelectric potential via contact of an external friction material therewith, wherein the contact of the external friction material is detected based on a current change in the graphene channel layer due to the triboelectric potential applied thereto.
The device of claim 1, wherein the substrate is a flexible substrate.
The device of claim 1, wherein the gate dielectric layer induces a gate characteristic for the graphene channel layer.
The device of claim 1, wherein the gate dielectric layer includes a two- dimensional insulating material or an ion-gel.
The device of claim 1, wherein the triboelectric layer is made of a material 2 Docket No. 4140-1004 located in a center region of a triboelectric series.
A The method for manufacturing a graphene based touch sensor device using triboelectric effect, of claim 20 the method comprising: providing a substrate; depositing a first electrode layer on the substrate; patterning the first electrode layer using a first photolithography process; transferring graphene onto the substrate to form a graphene layer such that the graphene layer is separated from the first electrode layer; forming source and drain electrodes partially on the graphene layer using a second photolithography process; etching the graphene layer using a third photolithography process to form a graphene channel layer; forming a gate dielectric layer so as to be partially in contact with the first electrode layer and the graphene channel layer respectively; and attaching a triboelectric layer on the first electrode layer.
The method of claim 6, wherein the first photolithography process is a positive photolithography process.
The method of claim 6, wherein the second photolithography process is a negative photolithography process.
The method of claim 6, wherein the third photolithography process is a positive photolithography process.
A The graphene based touch sensor device using triboelectric effect, the device of claim 19 comprising: a substrate; a graphene channel layer disposed on the substrate; 3 Docket No. 4140-1004 a gate dielectric layer disposed on the graphene channel layer; source and drain electrodes disposed on the graphene channel layer on both opposing ends of the graphene channel layer respectively, wherein the source and drain electrodes are separated from the gate dielectric layer; a further electrode layer disposed on the gate dielectric layer; and a triboelectric layer disposed on the further electrode layer, wherein the triboelectric layer generates a triboelectric potential via contact of an external friction material therewith, wherein the contact of the external friction material is detected based on a current change in the graphene channel layer due to the triboelectric potential applied thereto.
The device of claim 10, wherein the substrate is a flexible substrate.
The device of claim 10, wherein the gate dielectric layer induces a gate characteristic for the graphene channel layer.
The device of claim 10, wherein the gate dielectric layer includes a two- dimensional insulating material or an ion-gel.
The device of claim 10, wherein the triboelectric layer is made of a material located in a center region of a triboelectric series.
A The method for manufacturing a graphene based touch sensor device using triboelectric effect, the method of claim 20 comprising: providing a substrate; transferring graphene onto the substrate to form a graphene layer; forming source and drain electrodes partially on the graphene layer using a first photolithography process; etching the graphene layer using a second photolithography process to form a graphene channel layer; 4 Docket No. 4140-1004 forming a gate dielectric layer on the graphene channel layer; depositing a further electrode layer on the gate dielectric layer; patterning the further electrode layer using a third photolithography process; and attaching a triboelectric layer on the patterned further electrode layer.
The method of claim 15, wherein the third photolithography process is a positive photolithography process.
The method of claim 15, wherein the first photolithography process is a negative photolithography process.
The method of claim 15, wherein the second photolithography process is a positive photolithography process.
A graphene-based touch sensor device using triboelectric effect comprising: a substrate; a graphene channel layer disposed on the substrate; a gate dielectric layer; a source and drain electrodes; and a triboelectric layer, wherein the triboelectric layer generates a triboelectric potential via contact of an external friction material therewith, wherein the contact of the external friction material is detected based on a current change in the graphene channel layer due to the triboelectric potential applied thereto.
A method for manufacturing a graphene-based touch sensor device using triboelectric effect comprising: providing a substrate; transferring graphene onto the substrate to form a graphene layer; forming source and drain electrodes partially on the graphene layer; 5 Docket No. 4140-1004 etching the graphene layer; forming a gate dielectric layer on an electrode layer; and attaching a triboelectric layer on the electrode layer. 6
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based touch sensor device (lateral first-electrode configuration)
Materials described outside the worked examples.
graphene
gate dielectric
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 2–5 nm | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
graphene-based touch sensor device (top-gate stacked configuration)
graphene-based touch sensor device (generic)
triboelectric layer material
two-dimensional insulating material
ion-gel
| — |
Duration | ≥ 10 minutes | — |
Thickness | ≥ 30 nm | — |
graphene-based touch sensor device (top-gate stacked configuration)
graphene-based touch sensor device (generic)
triboelectric layer material
two-dimensional insulating material
ion-gel
| — |
Duration | ≥ 10 minutes | — |
Thickness | ≥ 30 nm | — |
graphene-based touch sensor device (top-gate stacked configuration)
graphene-based touch sensor device (generic)
triboelectric layer material
two-dimensional insulating material
ion-gel
| — |
Duration | ≥ 10 minutes | — |
Thickness | ≥ 30 nm | — |
graphene-based touch sensor device (top-gate stacked configuration)
graphene-based touch sensor device (generic)
triboelectric layer material
two-dimensional insulating material
ion-gel
| — |
Duration | ≥ 10 minutes | — |
Thickness | ≥ 30 nm | — |