Patent
US 9,091,634Graphene Defect Detection
Seth A. Miller
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,091,634Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for detecting a defect in a sample, wherein the sample includes graphene, the method comprising: receiving a sample, wherein the sample includes at least some graphene and at least some defects in the graphene; exposing the sample to a gas under sufficient reaction conditions to produce a marked sample, wherein the gas includes molecules and the molecules include at least one atom of Selenium (Se), Tellurium (Te), Tin (Sn), Bromine (Br), Hafnium (Hf), or Iodine (I), and the marked sample includes marks bonded to at least some of the defects in the graphene; at least partially removing the gas from the marked sample; placing the marked sample in a detector system; and detecting the defect by detecting at least some of the marks bonded to defects in the marked sample with the detector system. currently amended
The method as recited in claim 1, further comprising exposing the marked sample to a liquid or a gas under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample.
The method as recited in claim 1, further comprising exposing the marked sample to heat under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample.
The method as recited in claim 1, further comprising exposing the marked sample to a temperature in a range of about 100 degrees Celsius to about 200 degrees Celsius in a pressure of about 0.5 millitorr to about 10 millitorr to at least partially remove the marks from the defects of the marked sample. 2
The method as recited in claim 1, wherei-exposigthe moleues wherein the molecules include iodine atoms.
The method as recited in claim 1, wherei-exposigthe moleues- wherein the molecules include at least one of iodine, thionyl iodide, an iodinated organic amine, hydrogen iodide, or diiodoethane.
The method as recited in claim 1, wheren-exposigthe meleeules wherein the molecules include at least one of Selenium (Se), Tellurium (Te), or Tin (Sn).
The method as recited in claim 1, wheren exposing the meleeules wherein the molecules include at least one of boron triiodide (B I 3), aluminum triiodide (A lI 3), boron tribromide (BBr₃), hydrogen telluride (H₂Te), hydrogen selenide (H₂Se), tin chloride (SnCl₂), SnBr2, SnBr4, Tetrakis(E thylMethylAmino)Haf n ium, TertButylimido Tris(E thylMethylamino)Tantalum(V) or TertButylimido Tris(E thylMethylamino)Tantalum(V).
The method as recited in claim 1, wherei-expesigthe sa ° wherein the gas includes molecules, wherein the molecules include boron triiodide B I 3 and iodoaniline.
The method as recited in claim 1, wherei-expesigthe sa ° wherein the gas includes molecules, wherein the molecules include at least one of diiodoethane and thionyl iodide, diiodoethane and borontriiodide, or iodine and boron triiodide. currently amended
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks with a total x-ray fluorescence system.
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks associated with the marked sample with a backscatter system.
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks associated with the marked sample with the detector system to produce an output indicating a number of atoms bonded to the defects.
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks associated with the marked sample with the detector system to produce data associated with a map of the defects associated with the marked sample.
The method as recited in claim 1, wherein exposing the sample to the gas further comprises heating the sample to a temperature in a range of about 100 degrees Celsius to about 200 degrees Celsius while exposing the sample to the gas.
canceled
canceled
A system effective to detect a defect in a sample, wherein the sample includes graphene, the system comprising: a chamber configured effective to receive a sample, wherein the sample includes at least some graphene and at least some defects in the graphene, the chamber effective to expose the sample to a gas under sufficient reaction conditions to produce a marked sample, wherein the marked sample includes graphene and marks bonded to at least some of the defects associated with the sample, the chamber further effective to at least partially remove the gas from the marked sample; and 4 a detector system configured in operative relationship with the chamber, wherein the detector system is configured effective to receive the marked sample and effective to detect at least some of the marks bonded to defects in the marked sample. withdrawn
The system as recited in claim 18, wherein the gas includes molecules, and the molecules include at least one atom having an atomic weight greater than about 40. withdrawn
The system as recited in claim 18, wherein the chamber is a first chamber and the system further comprises: a second chamber configured in operative relationship with the detector system, wherein the second chamber is configured effective to expose the marked sample to a liquid or a gas under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample. withdrawn
The system as recited in claim 18, wherein the chamber is a first chamber and the system further comprises: a second chamber configured in operative relationship with the detector system, wherein the second chamber is configured effective to expose the marked sample to heat under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample. withdrawn
The system as recited in claim 18, wherein the gas includes iodine molecules. withdrawn
The system as recited in claim 18, wherein the gas includes at least one of iodine, thionyl iodide, an iodinated organic amine, hydrogen iodide, or diiodoethane molecules. withdrawn
The system as recited in claim 18, wherein the gas includes at least one of Selenium (Se), Tellurium (Te), or Tin (Sn) molecules. 5 withdrawn
The system as recited in claim 18, wherein the gas includes at least one of boron triiodide (B I 3), aluminum triiodide (A lI 3), boron tribromide (BBr₃), hydrogen telluride (H₂Te), hydrogen selenide (H₂Se), tin chloride (SnCl₂), SnBr2, SnBr4, Tetrakis(E thylMethylAmino)Haf n ium, TertButylimido Tris(E thylMethylamino)Tantalum(V), or TertButylimido Tris(E thylMethylamino)Tantalum(V)molecules. withdrawn
The system as recited in claim 18, wherein the gas includes molecules including boron triiodide B I 3 and iodoaniline. withdrawn
The system as recited in claim 18, wherein the gas includes molecules including at least one of diiodoethane and thionyl iodide, diiodoethane and borontriiodide, or iodine and boron triiodide. withdrawn
The system as recited in claim 18, wherein the detector system includes a total x-ray fluorescence system. withdrawn
The system as recited in claim 18, wherein the detector system includes a backscatter system. withdrawn
The system as recited in claim 18, further comprising a heater configured in operative relationship with the chamber, wherein the heater is effective to heat the sample to a temperature in a range of about 100 degrees Celsius to about 200 degrees Celsius when the chamber is configured effective to expose the sample to the gas. withdrawn
canceled
A sample comprising: at least some graphene; at least one defect in the graphene; and at least one mark bonded to at least one of the defects, the mark including molecules,-the, wherein the 6 molecules include at least one atom of Selenium (Se), Tellurium (Te), Tin (Sn), Bromine (Br), Hafnium (Hf), or Iodine (I), and the mark effective to facilitate detection of the defect.
The sample as recited in claim 32, wherein the molecules include iodine atoms.
The sample as recited in claim 32, wherein the molecules include at least one of iodine, thionyl iodide, an iodinated organic amine, hydrogen iodide, or diiodoethane.
The sample as recited in claim 32, wherein the molecules include at least one of Selenium (Se), Tellurium (Te), or Tin (Sn).
The sample as recited in claim 32, wherein the molecules include at least one of boron triiodide (B I 3), aluminum triiodide (A lI 3), boron tribromide (BBr₃), hydrogen telluride (H₂Te), hydrogen selenide (H₂Se), tin chloride (SnCl₂), SnBr2, SnBr4, Tetrakis(E thylMethylAmino)Haf n ium, TertButylimido Tris(E thylMethylamino)Tantalum(V), or TertButylimido Tris(E thylMethylamino)Tantalum(V).
The sample as recited in claim 32, wherein the molecules include boron triiodide B I 3 and iodoaniline.
The sample as recited in claim 32, wherein the molecules include diiodoethane and thionyl iodide. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene defect detection system
Materials described outside the worked examples.
graphene
marking gas (Se, Te, Sn, Br, Hf, or I containing molecules)
iodine
I₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 2–10 minutes | — |
Duration | 1–5 minutes |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,091,634Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for detecting a defect in a sample, wherein the sample includes graphene, the method comprising: receiving a sample, wherein the sample includes at least some graphene and at least some defects in the graphene; exposing the sample to a gas under sufficient reaction conditions to produce a marked sample, wherein the gas includes molecules and the molecules include at least one atom of Selenium (Se), Tellurium (Te), Tin (Sn), Bromine (Br), Hafnium (Hf), or Iodine (I), and the marked sample includes marks bonded to at least some of the defects in the graphene; at least partially removing the gas from the marked sample; placing the marked sample in a detector system; and detecting the defect by detecting at least some of the marks bonded to defects in the marked sample with the detector system. currently amended
The method as recited in claim 1, further comprising exposing the marked sample to a liquid or a gas under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample.
The method as recited in claim 1, further comprising exposing the marked sample to heat under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample.
The method as recited in claim 1, further comprising exposing the marked sample to a temperature in a range of about 100 degrees Celsius to about 200 degrees Celsius in a pressure of about 0.5 millitorr to about 10 millitorr to at least partially remove the marks from the defects of the marked sample. 2
The method as recited in claim 1, wherei-exposigthe moleues wherein the molecules include iodine atoms.
The method as recited in claim 1, wherei-exposigthe moleues- wherein the molecules include at least one of iodine, thionyl iodide, an iodinated organic amine, hydrogen iodide, or diiodoethane.
The method as recited in claim 1, wheren-exposigthe meleeules wherein the molecules include at least one of Selenium (Se), Tellurium (Te), or Tin (Sn).
The method as recited in claim 1, wheren exposing the meleeules wherein the molecules include at least one of boron triiodide (B I 3), aluminum triiodide (A lI 3), boron tribromide (BBr₃), hydrogen telluride (H₂Te), hydrogen selenide (H₂Se), tin chloride (SnCl₂), SnBr2, SnBr4, Tetrakis(E thylMethylAmino)Haf n ium, TertButylimido Tris(E thylMethylamino)Tantalum(V) or TertButylimido Tris(E thylMethylamino)Tantalum(V).
The method as recited in claim 1, wherei-expesigthe sa ° wherein the gas includes molecules, wherein the molecules include boron triiodide B I 3 and iodoaniline.
The method as recited in claim 1, wherei-expesigthe sa ° wherein the gas includes molecules, wherein the molecules include at least one of diiodoethane and thionyl iodide, diiodoethane and borontriiodide, or iodine and boron triiodide. currently amended
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks with a total x-ray fluorescence system.
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks associated with the marked sample with a backscatter system.
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks associated with the marked sample with the detector system to produce an output indicating a number of atoms bonded to the defects.
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks associated with the marked sample with the detector system to produce data associated with a map of the defects associated with the marked sample.
The method as recited in claim 1, wherein exposing the sample to the gas further comprises heating the sample to a temperature in a range of about 100 degrees Celsius to about 200 degrees Celsius while exposing the sample to the gas.
canceled
canceled
A system effective to detect a defect in a sample, wherein the sample includes graphene, the system comprising: a chamber configured effective to receive a sample, wherein the sample includes at least some graphene and at least some defects in the graphene, the chamber effective to expose the sample to a gas under sufficient reaction conditions to produce a marked sample, wherein the marked sample includes graphene and marks bonded to at least some of the defects associated with the sample, the chamber further effective to at least partially remove the gas from the marked sample; and 4 a detector system configured in operative relationship with the chamber, wherein the detector system is configured effective to receive the marked sample and effective to detect at least some of the marks bonded to defects in the marked sample. withdrawn
The system as recited in claim 18, wherein the gas includes molecules, and the molecules include at least one atom having an atomic weight greater than about 40. withdrawn
The system as recited in claim 18, wherein the chamber is a first chamber and the system further comprises: a second chamber configured in operative relationship with the detector system, wherein the second chamber is configured effective to expose the marked sample to a liquid or a gas under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample. withdrawn
The system as recited in claim 18, wherein the chamber is a first chamber and the system further comprises: a second chamber configured in operative relationship with the detector system, wherein the second chamber is configured effective to expose the marked sample to heat under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample. withdrawn
The system as recited in claim 18, wherein the gas includes iodine molecules. withdrawn
The system as recited in claim 18, wherein the gas includes at least one of iodine, thionyl iodide, an iodinated organic amine, hydrogen iodide, or diiodoethane molecules. withdrawn
The system as recited in claim 18, wherein the gas includes at least one of Selenium (Se), Tellurium (Te), or Tin (Sn) molecules. 5 withdrawn
The system as recited in claim 18, wherein the gas includes at least one of boron triiodide (B I 3), aluminum triiodide (A lI 3), boron tribromide (BBr₃), hydrogen telluride (H₂Te), hydrogen selenide (H₂Se), tin chloride (SnCl₂), SnBr2, SnBr4, Tetrakis(E thylMethylAmino)Haf n ium, TertButylimido Tris(E thylMethylamino)Tantalum(V), or TertButylimido Tris(E thylMethylamino)Tantalum(V)molecules. withdrawn
The system as recited in claim 18, wherein the gas includes molecules including boron triiodide B I 3 and iodoaniline. withdrawn
The system as recited in claim 18, wherein the gas includes molecules including at least one of diiodoethane and thionyl iodide, diiodoethane and borontriiodide, or iodine and boron triiodide. withdrawn
The system as recited in claim 18, wherein the detector system includes a total x-ray fluorescence system. withdrawn
The system as recited in claim 18, wherein the detector system includes a backscatter system. withdrawn
The system as recited in claim 18, further comprising a heater configured in operative relationship with the chamber, wherein the heater is effective to heat the sample to a temperature in a range of about 100 degrees Celsius to about 200 degrees Celsius when the chamber is configured effective to expose the sample to the gas. withdrawn
canceled
A sample comprising: at least some graphene; at least one defect in the graphene; and at least one mark bonded to at least one of the defects, the mark including molecules,-the, wherein the 6 molecules include at least one atom of Selenium (Se), Tellurium (Te), Tin (Sn), Bromine (Br), Hafnium (Hf), or Iodine (I), and the mark effective to facilitate detection of the defect.
The sample as recited in claim 32, wherein the molecules include iodine atoms.
The sample as recited in claim 32, wherein the molecules include at least one of iodine, thionyl iodide, an iodinated organic amine, hydrogen iodide, or diiodoethane.
The sample as recited in claim 32, wherein the molecules include at least one of Selenium (Se), Tellurium (Te), or Tin (Sn).
The sample as recited in claim 32, wherein the molecules include at least one of boron triiodide (B I 3), aluminum triiodide (A lI 3), boron tribromide (BBr₃), hydrogen telluride (H₂Te), hydrogen selenide (H₂Se), tin chloride (SnCl₂), SnBr2, SnBr4, Tetrakis(E thylMethylAmino)Haf n ium, TertButylimido Tris(E thylMethylamino)Tantalum(V), or TertButylimido Tris(E thylMethylamino)Tantalum(V).
The sample as recited in claim 32, wherein the molecules include boron triiodide B I 3 and iodoaniline.
The sample as recited in claim 32, wherein the molecules include diiodoethane and thionyl iodide. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene defect detection system
Materials described outside the worked examples.
graphene
marking gas (Se, Te, Sn, Br, Hf, or I containing molecules)
iodine
I₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 2–10 minutes | — |
Duration | 1–5 minutes |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,091,634Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for detecting a defect in a sample, wherein the sample includes graphene, the method comprising: receiving a sample, wherein the sample includes at least some graphene and at least some defects in the graphene; exposing the sample to a gas under sufficient reaction conditions to produce a marked sample, wherein the gas includes molecules and the molecules include at least one atom of Selenium (Se), Tellurium (Te), Tin (Sn), Bromine (Br), Hafnium (Hf), or Iodine (I), and the marked sample includes marks bonded to at least some of the defects in the graphene; at least partially removing the gas from the marked sample; placing the marked sample in a detector system; and detecting the defect by detecting at least some of the marks bonded to defects in the marked sample with the detector system. currently amended
The method as recited in claim 1, further comprising exposing the marked sample to a liquid or a gas under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample.
The method as recited in claim 1, further comprising exposing the marked sample to heat under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample.
The method as recited in claim 1, further comprising exposing the marked sample to a temperature in a range of about 100 degrees Celsius to about 200 degrees Celsius in a pressure of about 0.5 millitorr to about 10 millitorr to at least partially remove the marks from the defects of the marked sample. 2
The method as recited in claim 1, wherei-exposigthe moleues wherein the molecules include iodine atoms.
The method as recited in claim 1, wherei-exposigthe moleues- wherein the molecules include at least one of iodine, thionyl iodide, an iodinated organic amine, hydrogen iodide, or diiodoethane.
The method as recited in claim 1, wheren-exposigthe meleeules wherein the molecules include at least one of Selenium (Se), Tellurium (Te), or Tin (Sn).
The method as recited in claim 1, wheren exposing the meleeules wherein the molecules include at least one of boron triiodide (B I 3), aluminum triiodide (A lI 3), boron tribromide (BBr₃), hydrogen telluride (H₂Te), hydrogen selenide (H₂Se), tin chloride (SnCl₂), SnBr2, SnBr4, Tetrakis(E thylMethylAmino)Haf n ium, TertButylimido Tris(E thylMethylamino)Tantalum(V) or TertButylimido Tris(E thylMethylamino)Tantalum(V).
The method as recited in claim 1, wherei-expesigthe sa ° wherein the gas includes molecules, wherein the molecules include boron triiodide B I 3 and iodoaniline.
The method as recited in claim 1, wherei-expesigthe sa ° wherein the gas includes molecules, wherein the molecules include at least one of diiodoethane and thionyl iodide, diiodoethane and borontriiodide, or iodine and boron triiodide. currently amended
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks with a total x-ray fluorescence system.
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks associated with the marked sample with a backscatter system.
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks associated with the marked sample with the detector system to produce an output indicating a number of atoms bonded to the defects.
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks associated with the marked sample with the detector system to produce data associated with a map of the defects associated with the marked sample.
The method as recited in claim 1, wherein exposing the sample to the gas further comprises heating the sample to a temperature in a range of about 100 degrees Celsius to about 200 degrees Celsius while exposing the sample to the gas.
canceled
canceled
A system effective to detect a defect in a sample, wherein the sample includes graphene, the system comprising: a chamber configured effective to receive a sample, wherein the sample includes at least some graphene and at least some defects in the graphene, the chamber effective to expose the sample to a gas under sufficient reaction conditions to produce a marked sample, wherein the marked sample includes graphene and marks bonded to at least some of the defects associated with the sample, the chamber further effective to at least partially remove the gas from the marked sample; and 4 a detector system configured in operative relationship with the chamber, wherein the detector system is configured effective to receive the marked sample and effective to detect at least some of the marks bonded to defects in the marked sample. withdrawn
The system as recited in claim 18, wherein the gas includes molecules, and the molecules include at least one atom having an atomic weight greater than about 40. withdrawn
The system as recited in claim 18, wherein the chamber is a first chamber and the system further comprises: a second chamber configured in operative relationship with the detector system, wherein the second chamber is configured effective to expose the marked sample to a liquid or a gas under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample. withdrawn
The system as recited in claim 18, wherein the chamber is a first chamber and the system further comprises: a second chamber configured in operative relationship with the detector system, wherein the second chamber is configured effective to expose the marked sample to heat under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample. withdrawn
The system as recited in claim 18, wherein the gas includes iodine molecules. withdrawn
The system as recited in claim 18, wherein the gas includes at least one of iodine, thionyl iodide, an iodinated organic amine, hydrogen iodide, or diiodoethane molecules. withdrawn
The system as recited in claim 18, wherein the gas includes at least one of Selenium (Se), Tellurium (Te), or Tin (Sn) molecules. 5 withdrawn
The system as recited in claim 18, wherein the gas includes at least one of boron triiodide (B I 3), aluminum triiodide (A lI 3), boron tribromide (BBr₃), hydrogen telluride (H₂Te), hydrogen selenide (H₂Se), tin chloride (SnCl₂), SnBr2, SnBr4, Tetrakis(E thylMethylAmino)Haf n ium, TertButylimido Tris(E thylMethylamino)Tantalum(V), or TertButylimido Tris(E thylMethylamino)Tantalum(V)molecules. withdrawn
The system as recited in claim 18, wherein the gas includes molecules including boron triiodide B I 3 and iodoaniline. withdrawn
The system as recited in claim 18, wherein the gas includes molecules including at least one of diiodoethane and thionyl iodide, diiodoethane and borontriiodide, or iodine and boron triiodide. withdrawn
The system as recited in claim 18, wherein the detector system includes a total x-ray fluorescence system. withdrawn
The system as recited in claim 18, wherein the detector system includes a backscatter system. withdrawn
The system as recited in claim 18, further comprising a heater configured in operative relationship with the chamber, wherein the heater is effective to heat the sample to a temperature in a range of about 100 degrees Celsius to about 200 degrees Celsius when the chamber is configured effective to expose the sample to the gas. withdrawn
canceled
A sample comprising: at least some graphene; at least one defect in the graphene; and at least one mark bonded to at least one of the defects, the mark including molecules,-the, wherein the 6 molecules include at least one atom of Selenium (Se), Tellurium (Te), Tin (Sn), Bromine (Br), Hafnium (Hf), or Iodine (I), and the mark effective to facilitate detection of the defect.
The sample as recited in claim 32, wherein the molecules include iodine atoms.
The sample as recited in claim 32, wherein the molecules include at least one of iodine, thionyl iodide, an iodinated organic amine, hydrogen iodide, or diiodoethane.
The sample as recited in claim 32, wherein the molecules include at least one of Selenium (Se), Tellurium (Te), or Tin (Sn).
The sample as recited in claim 32, wherein the molecules include at least one of boron triiodide (B I 3), aluminum triiodide (A lI 3), boron tribromide (BBr₃), hydrogen telluride (H₂Te), hydrogen selenide (H₂Se), tin chloride (SnCl₂), SnBr2, SnBr4, Tetrakis(E thylMethylAmino)Haf n ium, TertButylimido Tris(E thylMethylamino)Tantalum(V), or TertButylimido Tris(E thylMethylamino)Tantalum(V).
The sample as recited in claim 32, wherein the molecules include boron triiodide B I 3 and iodoaniline.
The sample as recited in claim 32, wherein the molecules include diiodoethane and thionyl iodide. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene defect detection system
Materials described outside the worked examples.
graphene
marking gas (Se, Te, Sn, Br, Hf, or I containing molecules)
iodine
I₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 2–10 minutes | — |
Duration | 1–5 minutes |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,091,634Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for detecting a defect in a sample, wherein the sample includes graphene, the method comprising: receiving a sample, wherein the sample includes at least some graphene and at least some defects in the graphene; exposing the sample to a gas under sufficient reaction conditions to produce a marked sample, wherein the gas includes molecules and the molecules include at least one atom of Selenium (Se), Tellurium (Te), Tin (Sn), Bromine (Br), Hafnium (Hf), or Iodine (I), and the marked sample includes marks bonded to at least some of the defects in the graphene; at least partially removing the gas from the marked sample; placing the marked sample in a detector system; and detecting the defect by detecting at least some of the marks bonded to defects in the marked sample with the detector system. currently amended
The method as recited in claim 1, further comprising exposing the marked sample to a liquid or a gas under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample.
The method as recited in claim 1, further comprising exposing the marked sample to heat under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample.
The method as recited in claim 1, further comprising exposing the marked sample to a temperature in a range of about 100 degrees Celsius to about 200 degrees Celsius in a pressure of about 0.5 millitorr to about 10 millitorr to at least partially remove the marks from the defects of the marked sample. 2
The method as recited in claim 1, wherei-exposigthe moleues wherein the molecules include iodine atoms.
The method as recited in claim 1, wherei-exposigthe moleues- wherein the molecules include at least one of iodine, thionyl iodide, an iodinated organic amine, hydrogen iodide, or diiodoethane.
The method as recited in claim 1, wheren-exposigthe meleeules wherein the molecules include at least one of Selenium (Se), Tellurium (Te), or Tin (Sn).
The method as recited in claim 1, wheren exposing the meleeules wherein the molecules include at least one of boron triiodide (B I 3), aluminum triiodide (A lI 3), boron tribromide (BBr₃), hydrogen telluride (H₂Te), hydrogen selenide (H₂Se), tin chloride (SnCl₂), SnBr2, SnBr4, Tetrakis(E thylMethylAmino)Haf n ium, TertButylimido Tris(E thylMethylamino)Tantalum(V) or TertButylimido Tris(E thylMethylamino)Tantalum(V).
The method as recited in claim 1, wherei-expesigthe sa ° wherein the gas includes molecules, wherein the molecules include boron triiodide B I 3 and iodoaniline.
The method as recited in claim 1, wherei-expesigthe sa ° wherein the gas includes molecules, wherein the molecules include at least one of diiodoethane and thionyl iodide, diiodoethane and borontriiodide, or iodine and boron triiodide. currently amended
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks with a total x-ray fluorescence system.
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks associated with the marked sample with a backscatter system.
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks associated with the marked sample with the detector system to produce an output indicating a number of atoms bonded to the defects.
The method as recited in claim 1, wherein detecting at least some of the marks associated with the marked sample f u rther comprises detecting at least some of the marks associated with the marked sample with the detector system to produce data associated with a map of the defects associated with the marked sample.
The method as recited in claim 1, wherein exposing the sample to the gas further comprises heating the sample to a temperature in a range of about 100 degrees Celsius to about 200 degrees Celsius while exposing the sample to the gas.
canceled
canceled
A system effective to detect a defect in a sample, wherein the sample includes graphene, the system comprising: a chamber configured effective to receive a sample, wherein the sample includes at least some graphene and at least some defects in the graphene, the chamber effective to expose the sample to a gas under sufficient reaction conditions to produce a marked sample, wherein the marked sample includes graphene and marks bonded to at least some of the defects associated with the sample, the chamber further effective to at least partially remove the gas from the marked sample; and 4 a detector system configured in operative relationship with the chamber, wherein the detector system is configured effective to receive the marked sample and effective to detect at least some of the marks bonded to defects in the marked sample. withdrawn
The system as recited in claim 18, wherein the gas includes molecules, and the molecules include at least one atom having an atomic weight greater than about 40. withdrawn
The system as recited in claim 18, wherein the chamber is a first chamber and the system further comprises: a second chamber configured in operative relationship with the detector system, wherein the second chamber is configured effective to expose the marked sample to a liquid or a gas under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample. withdrawn
The system as recited in claim 18, wherein the chamber is a first chamber and the system further comprises: a second chamber configured in operative relationship with the detector system, wherein the second chamber is configured effective to expose the marked sample to heat under sufficient reaction conditions to at least partially remove the marks from the defects of the marked sample. withdrawn
The system as recited in claim 18, wherein the gas includes iodine molecules. withdrawn
The system as recited in claim 18, wherein the gas includes at least one of iodine, thionyl iodide, an iodinated organic amine, hydrogen iodide, or diiodoethane molecules. withdrawn
The system as recited in claim 18, wherein the gas includes at least one of Selenium (Se), Tellurium (Te), or Tin (Sn) molecules. 5 withdrawn
The system as recited in claim 18, wherein the gas includes at least one of boron triiodide (B I 3), aluminum triiodide (A lI 3), boron tribromide (BBr₃), hydrogen telluride (H₂Te), hydrogen selenide (H₂Se), tin chloride (SnCl₂), SnBr2, SnBr4, Tetrakis(E thylMethylAmino)Haf n ium, TertButylimido Tris(E thylMethylamino)Tantalum(V), or TertButylimido Tris(E thylMethylamino)Tantalum(V)molecules. withdrawn
The system as recited in claim 18, wherein the gas includes molecules including boron triiodide B I 3 and iodoaniline. withdrawn
The system as recited in claim 18, wherein the gas includes molecules including at least one of diiodoethane and thionyl iodide, diiodoethane and borontriiodide, or iodine and boron triiodide. withdrawn
The system as recited in claim 18, wherein the detector system includes a total x-ray fluorescence system. withdrawn
The system as recited in claim 18, wherein the detector system includes a backscatter system. withdrawn
The system as recited in claim 18, further comprising a heater configured in operative relationship with the chamber, wherein the heater is effective to heat the sample to a temperature in a range of about 100 degrees Celsius to about 200 degrees Celsius when the chamber is configured effective to expose the sample to the gas. withdrawn
canceled
A sample comprising: at least some graphene; at least one defect in the graphene; and at least one mark bonded to at least one of the defects, the mark including molecules,-the, wherein the 6 molecules include at least one atom of Selenium (Se), Tellurium (Te), Tin (Sn), Bromine (Br), Hafnium (Hf), or Iodine (I), and the mark effective to facilitate detection of the defect.
The sample as recited in claim 32, wherein the molecules include iodine atoms.
The sample as recited in claim 32, wherein the molecules include at least one of iodine, thionyl iodide, an iodinated organic amine, hydrogen iodide, or diiodoethane.
The sample as recited in claim 32, wherein the molecules include at least one of Selenium (Se), Tellurium (Te), or Tin (Sn).
The sample as recited in claim 32, wherein the molecules include at least one of boron triiodide (B I 3), aluminum triiodide (A lI 3), boron tribromide (BBr₃), hydrogen telluride (H₂Te), hydrogen selenide (H₂Se), tin chloride (SnCl₂), SnBr2, SnBr4, Tetrakis(E thylMethylAmino)Haf n ium, TertButylimido Tris(E thylMethylamino)Tantalum(V), or TertButylimido Tris(E thylMethylamino)Tantalum(V).
The sample as recited in claim 32, wherein the molecules include boron triiodide B I 3 and iodoaniline.
The sample as recited in claim 32, wherein the molecules include diiodoethane and thionyl iodide. 7
Layer stacks claimed or described, ordered top of device to substrate.
graphene defect detection system
Materials described outside the worked examples.
graphene
marking gas (Se, Te, Sn, Br, Hf, or I containing molecules)
iodine
I₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 2–10 minutes | — |
Duration | 1–5 minutes |
Related documents with shared materials, methods, properties, or citations.
thionyl iodide
iodinated organic amine
hydrogen iodide
HI
diiodoethane
Selenium
Se
Tellurium
Te
Tin
Sn
boron triiodide
BI₃
aluminum triiodide
AlI₃
boron tribromide
BBr₃
hydrogen telluride
H₂Te
hydrogen selenide
H₂Se
tin chloride
SnCl₂
SnBr₂
SnBr₄
Tetrakis(EthylMethylAmino)Hafnium
TertButylimido Tris(EthylMethylamino)Tantalum(V)
iodoaniline
4-iodoaniline
3-iodopropyltrimethoxysilane
| — |
Duration | 30–180 s | — |
Pressure | 0.5–10 mTorr | — |
INTERNALLY FUNCTIONALIZED GRAPHENE SUBSTRATES
thionyl iodide
iodinated organic amine
hydrogen iodide
HI
diiodoethane
Selenium
Se
Tellurium
Te
Tin
Sn
boron triiodide
BI₃
aluminum triiodide
AlI₃
boron tribromide
BBr₃
hydrogen telluride
H₂Te
hydrogen selenide
H₂Se
tin chloride
SnCl₂
SnBr₂
SnBr₄
Tetrakis(EthylMethylAmino)Hafnium
TertButylimido Tris(EthylMethylamino)Tantalum(V)
iodoaniline
4-iodoaniline
3-iodopropyltrimethoxysilane
| — |
Duration | 30–180 s | — |
Pressure | 0.5–10 mTorr | — |
INTERNALLY FUNCTIONALIZED GRAPHENE SUBSTRATES
thionyl iodide
iodinated organic amine
hydrogen iodide
HI
diiodoethane
Selenium
Se
Tellurium
Te
Tin
Sn
boron triiodide
BI₃
aluminum triiodide
AlI₃
boron tribromide
BBr₃
hydrogen telluride
H₂Te
hydrogen selenide
H₂Se
tin chloride
SnCl₂
SnBr₂
SnBr₄
Tetrakis(EthylMethylAmino)Hafnium
TertButylimido Tris(EthylMethylamino)Tantalum(V)
iodoaniline
4-iodoaniline
3-iodopropyltrimethoxysilane
| — |
Duration | 30–180 s | — |
Pressure | 0.5–10 mTorr | — |
INTERNALLY FUNCTIONALIZED GRAPHENE SUBSTRATES
thionyl iodide
iodinated organic amine
hydrogen iodide
HI
diiodoethane
Selenium
Se
Tellurium
Te
Tin
Sn
boron triiodide
BI₃
aluminum triiodide
AlI₃
boron tribromide
BBr₃
hydrogen telluride
H₂Te
hydrogen selenide
H₂Se
tin chloride
SnCl₂
SnBr₂
SnBr₄
Tetrakis(EthylMethylAmino)Hafnium
TertButylimido Tris(EthylMethylamino)Tantalum(V)
iodoaniline
4-iodoaniline
3-iodopropyltrimethoxysilane
| — |
Duration | 30–180 s | — |
Pressure | 0.5–10 mTorr | — |
INTERNALLY FUNCTIONALIZED GRAPHENE SUBSTRATES