Patent
US 10,680,066GRAPHENE DEVICE, METHODS OF MANUFACTURING AND OPERATING THE SAME, AND ELECTRONIC APPARATUS INCLUDING THE GRAPHENE DEVICE
Jinseong HEO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,680,066Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene device according to at least one example embodiment; [0046]
FIG. 2 is a cross-sectional view of a graphene device according to another example embodiment; [0047]
FIG. 3 is a cross-sectional view of a graphene device according to another example embodiment; [0048]
FIG. 4 is a cross-sectional view of a graphene device according to another example embodiment; [0049]
FIG. 5 is a cross-sectional view of a graphene device according to another example embodiment; [0050]
FIG. 6 is a cross-sectional view of a graphene device according to another example embodiment; [0051]
FIG. 7 is a cross-sectional view of a graphene device according to another example embodiment; [0052]
FIG. 8 is a cross-sectional view of a graphene device according to another example embodiment; [0053]
FIG. 9 is a cross-sectional view of a graphene device according to another example embodiment; [0054]
FIG. 10 is a cross-sectional view of a graphene device according to another example embodiment; [0055]
FIG. 11 is a cross-sectional view of a graphene device according to another example embodiment; 6 Atty. Dkt. No. 2557S I -002307-US [0056]
FIG. 12 is a cross-sectional view of a graphene device according to another example embodiment; [0057]
FIG. 13 is a cross-sectional view of a graphene device according to another example embodiment; [0058]
FIG. 14 is a cross-sectional view of a graphene device according to another example embodiment; [0059]
FIG. 15 is a cross-sectional view of a graphene device according to another example embodiment; [0060]
FIG. 16 is a cross-sectional view of a graphene device according to another example embodiment; [0061]
FIG. 17 is a cross-sectional view of a graphene device according to another example embodiment; [0062]
FIG. 18 is a cross-sectional view of a graphene device according to another example embodiment; [0063]
FIG. 19 is a circuit diagram showing a circuit configuration when the graphene device of
FIG. 20 is a cross-sectional view of a graphene device according to another example embodiment; [0065]
FIGS. 21 C and 22, the gate 100 and the second electrode 160B may be formed of or include transparent materials. The first electrode 160A may also be formed of …
FIG. 22 is a cross-sectional view for explaining a method of manufacturing a graphene device, according to another example embodiment; [0067]
FIGS. 23A-23D are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0068]
FIGS. 24A-24E are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0069]
FIGS. 25A-25E are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0070]
FIGS. 26A-26D are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0071]
FIG. 27 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to an example embodiment …
FIGS. 28-32 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 29 is an energy diagram for explaining the principle of turning on the graphene device of
FIGS. 30-32 are energy band diagrams for illustrating a method of changing the resistance state (memory state) of the graphene device of
FIG. 31, when no voltage is applied to the gate G12, that is, when a voltage of 0 V is applied as the second voltage Vgs, with a desired, or alternatively …
FIG. 32, when a negative voltage is applied to the gate G12, that is, when a negative voltage is applied as the second voltage Vgs, with a desired, or …
FIG. 33 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 34-37 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 35 is an energy band diagram for explaining the principle of turning on the graphene device of
FIG. 36, by applying a first voltage between the first electrode E₁ 2 and the second electrode E22, a first electric field may be applied between the graphene …
FIG. 37, by applying a second voltage between the first electrode E₁₂ and the second electrode E22, a second electric field may be applied between the graphene …
FIG. 38 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 39-41 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 40 is an energy band diagram for explaining the principle of turning on the graphene device of
FIG. 41, when the functional layer F₁₂ C is mechanically deformed, that is, when the functional layer F₁₂ C is compressed or expanded, electrical energy may be …
FIG. 42 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 43 and 44 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 44 is an energy band diagram when a voltage has been applied to the gate G₁₄ of the graphene device of
FIG. 45 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 46 and 47 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 47 is an energy band diagram when a voltage has been applied to the gate G₁₄ of the graphene device of
FIG. 48 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 49 and 50 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 50 is an energy band diagram illustrating the principle that light is emitted from the functional layer F 1 6A in the graphene device of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
The graphene device of claim 4, wherein the functional layer comprises at least one of a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, and a piezoelectric material. Previously presented
The graphene device of claim 4, wherein the functional layer comprises at least one of transition metal oxide (TMO), a chalcogenide material, a perovskite material, a two-dimensional (2 D) material, and an organic material. Previously presented
A graphene device comprising: a graphene layer; a first electrode electrically connected to a first region of the graphene layer; a second electrode in spatial correspondence to a second region of the graphene layer; a functional layer between the graphene layer and the second electrode and having at least one of nonvolatile memory characteristics and piezoelectric characteristics; a gate facing the functional layer with the graphene layer therebetween; a gate insulation layer between the graphene layer and the gate; a first insertion layer between the functional layer and the graphene layer, the first insertion layer including a different material than the functional layer and the graphene layer, the first insertion layer directly contacting the graphene layer and the functional layer; and a second insertion layer between the functional layer and the second electrode, the second insertion layer including a different material than the functional layer and the second electrode, the second insertion layer directly contacting the functional layer and the second electrode. Previously presented
The graphene device of claim 4, wherein the gate insulation layer is on the gate, the graphene layer is on the gate insulation layer, the first and second electrodes spaced apart from each other are on the graphene layer, and the functional layer is between the graphene layer and the second electrode. Previously presented
The graphene device of claim 4, wherein the graphene layer is on a substrate, the first electrode is on the first region of the graphene layer, the second electrode is between the second region of the graphene layer and the substrate, the functional layer is between the second electrode and the graphene layer, and the gate insulation layer and the gate are sequentially on the graphene layer on the functional layer. Previously presented
The graphene device of claim 4, wherein the functional layer comp ri ses an n-type semiconductor or a p-type semiconductor. Previously presented
The graphene device of claim 4, wherein the functional layer comp ri ses an ambipolar semiconductor. Previously presented
The graphene device of claim 4, wherein the functional layer comprises a plurality of layers laterally arranged, and the plurality of layers comprise an n-type semiconductor layer and a p-type semiconductor layer. Previously presented
The graphene device of claim 4, wherein the functional layer comprises a plurality of layers vertically stacked, and the plurality of layers comprise an n-type semiconductor layer and a p-type semiconductor layer. Withdrawn
The graphene device of claim 4, wherein the functional layer comprises a phase change material, and the graphene device further comprises a heating electrode between the functional layer and the second electrode. Previously presented
The graphene device of claim 4, wherein the functional layer has optoelectronic conversion characteristics. Withdrawn
The graphene device of claim 4, wherein a second functional layer is further between the graphene layer and the second electrode, and the second functional layer has optoelectronic conversion characteristics. Withdrawn
The graphene device of claim 4, wherein at least one of the gate, the first electrode, and the second electrode includes a transparent material. Previously presented
The graphene device of claim 4, wherein the graphene device is a multifunctional device. Previously presented
The graphene device of cla i m 4, wherein the first and second insertion layers are semiconductors or insulators. Original
A graphene device comprising: first and second graphene layers; first and second electrode elements electrically connected to the first and second graphene layers, respectively; a third electrode element in spatial correspondence to a portion of the first graphene layer and a portion of the second graphene layer; a first functional layer between the third electrode element and the first graphene layer; a second functional layer between the third electrode element and the second graphene layer; a gate spaced apart from the first and second graphene layers; a gate insulation layer between the gate and the first and second graphene layers; and an insulation layer between the first functional layer and the second functional layer, wherein at least one of the first and second functional layers has at least one of optoelectronic conversion characteristics, nonvolatile memory characteristics, and piezoelectric characteristics. Previously presented
The graphene device of claim 17, wherein one of the first and second functional layers is an n-type semiconductor, and the other is a p-type semiconductor. Original
The graphene device of claim 17, wherein the graphene device has an ambipolar transistor structure. Original
The graphene device of claim 17, wherein at least one of the first and second functional layers comprises at least one of a light emission material, a photoactive material, a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, and a piezoelectric material. Original
The graphene device of claim 17, wherein at least one of the first and second functional layers comprises at least one of a Group III and V elements-containing compound, TMO, a chalcogenide material, a perovskite material, a 2D material, and an organic material. Original
The graphene device of claim 17, further comprising at least one of: a first insertion layer between the first functional layer and the first graphene layer; a second insertion layer between the first functional layer and the third electrode element; a third insertion layer between the second functional layer and the second graphene layer; and a fourth insertion layer between the second functional layer and the third electrode element. Original
- 33. Canceled
Canceled
The graphene device of claim 36, further comprising: a gate opposite the at least one functional layer with respect to the at least one graphene layer; and a gate insulating layer between the at least one graphene layer and the gate. Previously presented
Canceled
A graphene device comprising: at least one graphene layer; at least one electrode element electrically connected to the at least one graphene layer; at least one functional layer between the at least one electrode element and the at least one graphene layer; wherein: the at least one functional layer is at least one of an optoelectronic conversion layer, a nonvolatile memory layer, a piezoelectric layer, an n-type semiconductor and a p-type semiconductor; the at least one graphene layer includes first and second graphene layers; the at least one electrode includes first and second electrode elements electrically connected to the first and second graphene layers and a third electrode element in spatial correspondence to a portion of the fi r st graphene layer and a portion of the second graphene layer; the at least one functional layer includes a first and second functional layers between the third electrode element and the first and second graphene layers, respectively; and an insulation layer between the first functional layer and the second functional layer. Previously presented
A graphene device comprising: at least one graphene layer; at least one electrode element electrically connected to the at least one graphene layer; at least one functional layer between the at least one electrode element and the at least one graphene layer; and at least one insertion layer between the at least one graphene layer and the at least one electrode element; wherein: the at least one functional layer is at least one of an optoelectronic conversion layer, a nonvolatile memory layer, a piezoelectric layer, an n-type semiconductor and a p-type semiconductor; the at least one graphene layer includes a single graphene layer; the at least one electrode element includes first and second electrodes electrically connected to a first region and a second region of the graphene layer, respectively; and the at least one functional layer includes a plurality of layers one of laterally arranged and stacked in a direction perpendicular to a surface of the graphene layer between the graphene layer and the second electrode, and at least two of the plurality of layers include diff erent materials from each other; wherein the at least one insertion layer includes first and second insertion layers, wherein the first insertion layer is in direct contact with the at least one graphene layer and the first electrode, and wherein the second insertion layer is in direct contact with the at least one graphene layer and the at least one functional layer. Previously presented
The graphene device of claim 37, wherein the second insertion layer includes a diff erent material than the at least one functional layer and the at least one graphene layer. Previously presented
The graphene device of claim 37, wherein the at least one graphene layer is between a substrate and at least one of a gate and a gate insulation layer. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (single graphene layer, with functional layer and insertion layers)
Materials described outside the worked examples.
resistance change material
phase change material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 41, when the functional layer F₁₂ C is mechanically deformed, that is, when the functional layer F₁₂ C is compressed or expanded, electrical energy may be …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 300–3000 nm | — |
Thickness | 400–700 nm |
Patent
Atlas literature
Patent
US 10,680,066Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene device according to at least one example embodiment; [0046]
FIG. 2 is a cross-sectional view of a graphene device according to another example embodiment; [0047]
FIG. 3 is a cross-sectional view of a graphene device according to another example embodiment; [0048]
FIG. 4 is a cross-sectional view of a graphene device according to another example embodiment; [0049]
FIG. 5 is a cross-sectional view of a graphene device according to another example embodiment; [0050]
FIG. 6 is a cross-sectional view of a graphene device according to another example embodiment; [0051]
FIG. 7 is a cross-sectional view of a graphene device according to another example embodiment; [0052]
FIG. 8 is a cross-sectional view of a graphene device according to another example embodiment; [0053]
FIG. 9 is a cross-sectional view of a graphene device according to another example embodiment; [0054]
FIG. 10 is a cross-sectional view of a graphene device according to another example embodiment; [0055]
FIG. 11 is a cross-sectional view of a graphene device according to another example embodiment; 6 Atty. Dkt. No. 2557S I -002307-US [0056]
FIG. 12 is a cross-sectional view of a graphene device according to another example embodiment; [0057]
FIG. 13 is a cross-sectional view of a graphene device according to another example embodiment; [0058]
FIG. 14 is a cross-sectional view of a graphene device according to another example embodiment; [0059]
FIG. 15 is a cross-sectional view of a graphene device according to another example embodiment; [0060]
FIG. 16 is a cross-sectional view of a graphene device according to another example embodiment; [0061]
FIG. 17 is a cross-sectional view of a graphene device according to another example embodiment; [0062]
FIG. 18 is a cross-sectional view of a graphene device according to another example embodiment; [0063]
FIG. 19 is a circuit diagram showing a circuit configuration when the graphene device of
FIG. 20 is a cross-sectional view of a graphene device according to another example embodiment; [0065]
FIGS. 21 C and 22, the gate 100 and the second electrode 160B may be formed of or include transparent materials. The first electrode 160A may also be formed of …
FIG. 22 is a cross-sectional view for explaining a method of manufacturing a graphene device, according to another example embodiment; [0067]
FIGS. 23A-23D are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0068]
FIGS. 24A-24E are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0069]
FIGS. 25A-25E are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0070]
FIGS. 26A-26D are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0071]
FIG. 27 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to an example embodiment …
FIGS. 28-32 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 29 is an energy diagram for explaining the principle of turning on the graphene device of
FIGS. 30-32 are energy band diagrams for illustrating a method of changing the resistance state (memory state) of the graphene device of
FIG. 31, when no voltage is applied to the gate G12, that is, when a voltage of 0 V is applied as the second voltage Vgs, with a desired, or alternatively …
FIG. 32, when a negative voltage is applied to the gate G12, that is, when a negative voltage is applied as the second voltage Vgs, with a desired, or …
FIG. 33 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 34-37 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 35 is an energy band diagram for explaining the principle of turning on the graphene device of
FIG. 36, by applying a first voltage between the first electrode E₁ 2 and the second electrode E22, a first electric field may be applied between the graphene …
FIG. 37, by applying a second voltage between the first electrode E₁₂ and the second electrode E22, a second electric field may be applied between the graphene …
FIG. 38 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 39-41 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 40 is an energy band diagram for explaining the principle of turning on the graphene device of
FIG. 41, when the functional layer F₁₂ C is mechanically deformed, that is, when the functional layer F₁₂ C is compressed or expanded, electrical energy may be …
FIG. 42 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 43 and 44 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 44 is an energy band diagram when a voltage has been applied to the gate G₁₄ of the graphene device of
FIG. 45 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 46 and 47 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 47 is an energy band diagram when a voltage has been applied to the gate G₁₄ of the graphene device of
FIG. 48 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 49 and 50 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 50 is an energy band diagram illustrating the principle that light is emitted from the functional layer F 1 6A in the graphene device of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
The graphene device of claim 4, wherein the functional layer comprises at least one of a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, and a piezoelectric material. Previously presented
The graphene device of claim 4, wherein the functional layer comprises at least one of transition metal oxide (TMO), a chalcogenide material, a perovskite material, a two-dimensional (2 D) material, and an organic material. Previously presented
A graphene device comprising: a graphene layer; a first electrode electrically connected to a first region of the graphene layer; a second electrode in spatial correspondence to a second region of the graphene layer; a functional layer between the graphene layer and the second electrode and having at least one of nonvolatile memory characteristics and piezoelectric characteristics; a gate facing the functional layer with the graphene layer therebetween; a gate insulation layer between the graphene layer and the gate; a first insertion layer between the functional layer and the graphene layer, the first insertion layer including a different material than the functional layer and the graphene layer, the first insertion layer directly contacting the graphene layer and the functional layer; and a second insertion layer between the functional layer and the second electrode, the second insertion layer including a different material than the functional layer and the second electrode, the second insertion layer directly contacting the functional layer and the second electrode. Previously presented
The graphene device of claim 4, wherein the gate insulation layer is on the gate, the graphene layer is on the gate insulation layer, the first and second electrodes spaced apart from each other are on the graphene layer, and the functional layer is between the graphene layer and the second electrode. Previously presented
The graphene device of claim 4, wherein the graphene layer is on a substrate, the first electrode is on the first region of the graphene layer, the second electrode is between the second region of the graphene layer and the substrate, the functional layer is between the second electrode and the graphene layer, and the gate insulation layer and the gate are sequentially on the graphene layer on the functional layer. Previously presented
The graphene device of claim 4, wherein the functional layer comp ri ses an n-type semiconductor or a p-type semiconductor. Previously presented
The graphene device of claim 4, wherein the functional layer comp ri ses an ambipolar semiconductor. Previously presented
The graphene device of claim 4, wherein the functional layer comprises a plurality of layers laterally arranged, and the plurality of layers comprise an n-type semiconductor layer and a p-type semiconductor layer. Previously presented
The graphene device of claim 4, wherein the functional layer comprises a plurality of layers vertically stacked, and the plurality of layers comprise an n-type semiconductor layer and a p-type semiconductor layer. Withdrawn
The graphene device of claim 4, wherein the functional layer comprises a phase change material, and the graphene device further comprises a heating electrode between the functional layer and the second electrode. Previously presented
The graphene device of claim 4, wherein the functional layer has optoelectronic conversion characteristics. Withdrawn
The graphene device of claim 4, wherein a second functional layer is further between the graphene layer and the second electrode, and the second functional layer has optoelectronic conversion characteristics. Withdrawn
The graphene device of claim 4, wherein at least one of the gate, the first electrode, and the second electrode includes a transparent material. Previously presented
The graphene device of claim 4, wherein the graphene device is a multifunctional device. Previously presented
The graphene device of cla i m 4, wherein the first and second insertion layers are semiconductors or insulators. Original
A graphene device comprising: first and second graphene layers; first and second electrode elements electrically connected to the first and second graphene layers, respectively; a third electrode element in spatial correspondence to a portion of the first graphene layer and a portion of the second graphene layer; a first functional layer between the third electrode element and the first graphene layer; a second functional layer between the third electrode element and the second graphene layer; a gate spaced apart from the first and second graphene layers; a gate insulation layer between the gate and the first and second graphene layers; and an insulation layer between the first functional layer and the second functional layer, wherein at least one of the first and second functional layers has at least one of optoelectronic conversion characteristics, nonvolatile memory characteristics, and piezoelectric characteristics. Previously presented
The graphene device of claim 17, wherein one of the first and second functional layers is an n-type semiconductor, and the other is a p-type semiconductor. Original
The graphene device of claim 17, wherein the graphene device has an ambipolar transistor structure. Original
The graphene device of claim 17, wherein at least one of the first and second functional layers comprises at least one of a light emission material, a photoactive material, a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, and a piezoelectric material. Original
The graphene device of claim 17, wherein at least one of the first and second functional layers comprises at least one of a Group III and V elements-containing compound, TMO, a chalcogenide material, a perovskite material, a 2D material, and an organic material. Original
The graphene device of claim 17, further comprising at least one of: a first insertion layer between the first functional layer and the first graphene layer; a second insertion layer between the first functional layer and the third electrode element; a third insertion layer between the second functional layer and the second graphene layer; and a fourth insertion layer between the second functional layer and the third electrode element. Original
- 33. Canceled
Canceled
The graphene device of claim 36, further comprising: a gate opposite the at least one functional layer with respect to the at least one graphene layer; and a gate insulating layer between the at least one graphene layer and the gate. Previously presented
Canceled
A graphene device comprising: at least one graphene layer; at least one electrode element electrically connected to the at least one graphene layer; at least one functional layer between the at least one electrode element and the at least one graphene layer; wherein: the at least one functional layer is at least one of an optoelectronic conversion layer, a nonvolatile memory layer, a piezoelectric layer, an n-type semiconductor and a p-type semiconductor; the at least one graphene layer includes first and second graphene layers; the at least one electrode includes first and second electrode elements electrically connected to the first and second graphene layers and a third electrode element in spatial correspondence to a portion of the fi r st graphene layer and a portion of the second graphene layer; the at least one functional layer includes a first and second functional layers between the third electrode element and the first and second graphene layers, respectively; and an insulation layer between the first functional layer and the second functional layer. Previously presented
A graphene device comprising: at least one graphene layer; at least one electrode element electrically connected to the at least one graphene layer; at least one functional layer between the at least one electrode element and the at least one graphene layer; and at least one insertion layer between the at least one graphene layer and the at least one electrode element; wherein: the at least one functional layer is at least one of an optoelectronic conversion layer, a nonvolatile memory layer, a piezoelectric layer, an n-type semiconductor and a p-type semiconductor; the at least one graphene layer includes a single graphene layer; the at least one electrode element includes first and second electrodes electrically connected to a first region and a second region of the graphene layer, respectively; and the at least one functional layer includes a plurality of layers one of laterally arranged and stacked in a direction perpendicular to a surface of the graphene layer between the graphene layer and the second electrode, and at least two of the plurality of layers include diff erent materials from each other; wherein the at least one insertion layer includes first and second insertion layers, wherein the first insertion layer is in direct contact with the at least one graphene layer and the first electrode, and wherein the second insertion layer is in direct contact with the at least one graphene layer and the at least one functional layer. Previously presented
The graphene device of claim 37, wherein the second insertion layer includes a diff erent material than the at least one functional layer and the at least one graphene layer. Previously presented
The graphene device of claim 37, wherein the at least one graphene layer is between a substrate and at least one of a gate and a gate insulation layer. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (single graphene layer, with functional layer and insertion layers)
Materials described outside the worked examples.
resistance change material
phase change material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 41, when the functional layer F₁₂ C is mechanically deformed, that is, when the functional layer F₁₂ C is compressed or expanded, electrical energy may be …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 300–3000 nm | — |
Thickness | 400–700 nm |
Patent
Atlas literature
Patent
US 10,680,066Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene device according to at least one example embodiment; [0046]
FIG. 2 is a cross-sectional view of a graphene device according to another example embodiment; [0047]
FIG. 3 is a cross-sectional view of a graphene device according to another example embodiment; [0048]
FIG. 4 is a cross-sectional view of a graphene device according to another example embodiment; [0049]
FIG. 5 is a cross-sectional view of a graphene device according to another example embodiment; [0050]
FIG. 6 is a cross-sectional view of a graphene device according to another example embodiment; [0051]
FIG. 7 is a cross-sectional view of a graphene device according to another example embodiment; [0052]
FIG. 8 is a cross-sectional view of a graphene device according to another example embodiment; [0053]
FIG. 9 is a cross-sectional view of a graphene device according to another example embodiment; [0054]
FIG. 10 is a cross-sectional view of a graphene device according to another example embodiment; [0055]
FIG. 11 is a cross-sectional view of a graphene device according to another example embodiment; 6 Atty. Dkt. No. 2557S I -002307-US [0056]
FIG. 12 is a cross-sectional view of a graphene device according to another example embodiment; [0057]
FIG. 13 is a cross-sectional view of a graphene device according to another example embodiment; [0058]
FIG. 14 is a cross-sectional view of a graphene device according to another example embodiment; [0059]
FIG. 15 is a cross-sectional view of a graphene device according to another example embodiment; [0060]
FIG. 16 is a cross-sectional view of a graphene device according to another example embodiment; [0061]
FIG. 17 is a cross-sectional view of a graphene device according to another example embodiment; [0062]
FIG. 18 is a cross-sectional view of a graphene device according to another example embodiment; [0063]
FIG. 19 is a circuit diagram showing a circuit configuration when the graphene device of
FIG. 20 is a cross-sectional view of a graphene device according to another example embodiment; [0065]
FIGS. 21 C and 22, the gate 100 and the second electrode 160B may be formed of or include transparent materials. The first electrode 160A may also be formed of …
FIG. 22 is a cross-sectional view for explaining a method of manufacturing a graphene device, according to another example embodiment; [0067]
FIGS. 23A-23D are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0068]
FIGS. 24A-24E are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0069]
FIGS. 25A-25E are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0070]
FIGS. 26A-26D are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0071]
FIG. 27 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to an example embodiment …
FIGS. 28-32 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 29 is an energy diagram for explaining the principle of turning on the graphene device of
FIGS. 30-32 are energy band diagrams for illustrating a method of changing the resistance state (memory state) of the graphene device of
FIG. 31, when no voltage is applied to the gate G12, that is, when a voltage of 0 V is applied as the second voltage Vgs, with a desired, or alternatively …
FIG. 32, when a negative voltage is applied to the gate G12, that is, when a negative voltage is applied as the second voltage Vgs, with a desired, or …
FIG. 33 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 34-37 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 35 is an energy band diagram for explaining the principle of turning on the graphene device of
FIG. 36, by applying a first voltage between the first electrode E₁ 2 and the second electrode E22, a first electric field may be applied between the graphene …
FIG. 37, by applying a second voltage between the first electrode E₁₂ and the second electrode E22, a second electric field may be applied between the graphene …
FIG. 38 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 39-41 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 40 is an energy band diagram for explaining the principle of turning on the graphene device of
FIG. 41, when the functional layer F₁₂ C is mechanically deformed, that is, when the functional layer F₁₂ C is compressed or expanded, electrical energy may be …
FIG. 42 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 43 and 44 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 44 is an energy band diagram when a voltage has been applied to the gate G₁₄ of the graphene device of
FIG. 45 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 46 and 47 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 47 is an energy band diagram when a voltage has been applied to the gate G₁₄ of the graphene device of
FIG. 48 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 49 and 50 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 50 is an energy band diagram illustrating the principle that light is emitted from the functional layer F 1 6A in the graphene device of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
The graphene device of claim 4, wherein the functional layer comprises at least one of a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, and a piezoelectric material. Previously presented
The graphene device of claim 4, wherein the functional layer comprises at least one of transition metal oxide (TMO), a chalcogenide material, a perovskite material, a two-dimensional (2 D) material, and an organic material. Previously presented
A graphene device comprising: a graphene layer; a first electrode electrically connected to a first region of the graphene layer; a second electrode in spatial correspondence to a second region of the graphene layer; a functional layer between the graphene layer and the second electrode and having at least one of nonvolatile memory characteristics and piezoelectric characteristics; a gate facing the functional layer with the graphene layer therebetween; a gate insulation layer between the graphene layer and the gate; a first insertion layer between the functional layer and the graphene layer, the first insertion layer including a different material than the functional layer and the graphene layer, the first insertion layer directly contacting the graphene layer and the functional layer; and a second insertion layer between the functional layer and the second electrode, the second insertion layer including a different material than the functional layer and the second electrode, the second insertion layer directly contacting the functional layer and the second electrode. Previously presented
The graphene device of claim 4, wherein the gate insulation layer is on the gate, the graphene layer is on the gate insulation layer, the first and second electrodes spaced apart from each other are on the graphene layer, and the functional layer is between the graphene layer and the second electrode. Previously presented
The graphene device of claim 4, wherein the graphene layer is on a substrate, the first electrode is on the first region of the graphene layer, the second electrode is between the second region of the graphene layer and the substrate, the functional layer is between the second electrode and the graphene layer, and the gate insulation layer and the gate are sequentially on the graphene layer on the functional layer. Previously presented
The graphene device of claim 4, wherein the functional layer comp ri ses an n-type semiconductor or a p-type semiconductor. Previously presented
The graphene device of claim 4, wherein the functional layer comp ri ses an ambipolar semiconductor. Previously presented
The graphene device of claim 4, wherein the functional layer comprises a plurality of layers laterally arranged, and the plurality of layers comprise an n-type semiconductor layer and a p-type semiconductor layer. Previously presented
The graphene device of claim 4, wherein the functional layer comprises a plurality of layers vertically stacked, and the plurality of layers comprise an n-type semiconductor layer and a p-type semiconductor layer. Withdrawn
The graphene device of claim 4, wherein the functional layer comprises a phase change material, and the graphene device further comprises a heating electrode between the functional layer and the second electrode. Previously presented
The graphene device of claim 4, wherein the functional layer has optoelectronic conversion characteristics. Withdrawn
The graphene device of claim 4, wherein a second functional layer is further between the graphene layer and the second electrode, and the second functional layer has optoelectronic conversion characteristics. Withdrawn
The graphene device of claim 4, wherein at least one of the gate, the first electrode, and the second electrode includes a transparent material. Previously presented
The graphene device of claim 4, wherein the graphene device is a multifunctional device. Previously presented
The graphene device of cla i m 4, wherein the first and second insertion layers are semiconductors or insulators. Original
A graphene device comprising: first and second graphene layers; first and second electrode elements electrically connected to the first and second graphene layers, respectively; a third electrode element in spatial correspondence to a portion of the first graphene layer and a portion of the second graphene layer; a first functional layer between the third electrode element and the first graphene layer; a second functional layer between the third electrode element and the second graphene layer; a gate spaced apart from the first and second graphene layers; a gate insulation layer between the gate and the first and second graphene layers; and an insulation layer between the first functional layer and the second functional layer, wherein at least one of the first and second functional layers has at least one of optoelectronic conversion characteristics, nonvolatile memory characteristics, and piezoelectric characteristics. Previously presented
The graphene device of claim 17, wherein one of the first and second functional layers is an n-type semiconductor, and the other is a p-type semiconductor. Original
The graphene device of claim 17, wherein the graphene device has an ambipolar transistor structure. Original
The graphene device of claim 17, wherein at least one of the first and second functional layers comprises at least one of a light emission material, a photoactive material, a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, and a piezoelectric material. Original
The graphene device of claim 17, wherein at least one of the first and second functional layers comprises at least one of a Group III and V elements-containing compound, TMO, a chalcogenide material, a perovskite material, a 2D material, and an organic material. Original
The graphene device of claim 17, further comprising at least one of: a first insertion layer between the first functional layer and the first graphene layer; a second insertion layer between the first functional layer and the third electrode element; a third insertion layer between the second functional layer and the second graphene layer; and a fourth insertion layer between the second functional layer and the third electrode element. Original
- 33. Canceled
Canceled
The graphene device of claim 36, further comprising: a gate opposite the at least one functional layer with respect to the at least one graphene layer; and a gate insulating layer between the at least one graphene layer and the gate. Previously presented
Canceled
A graphene device comprising: at least one graphene layer; at least one electrode element electrically connected to the at least one graphene layer; at least one functional layer between the at least one electrode element and the at least one graphene layer; wherein: the at least one functional layer is at least one of an optoelectronic conversion layer, a nonvolatile memory layer, a piezoelectric layer, an n-type semiconductor and a p-type semiconductor; the at least one graphene layer includes first and second graphene layers; the at least one electrode includes first and second electrode elements electrically connected to the first and second graphene layers and a third electrode element in spatial correspondence to a portion of the fi r st graphene layer and a portion of the second graphene layer; the at least one functional layer includes a first and second functional layers between the third electrode element and the first and second graphene layers, respectively; and an insulation layer between the first functional layer and the second functional layer. Previously presented
A graphene device comprising: at least one graphene layer; at least one electrode element electrically connected to the at least one graphene layer; at least one functional layer between the at least one electrode element and the at least one graphene layer; and at least one insertion layer between the at least one graphene layer and the at least one electrode element; wherein: the at least one functional layer is at least one of an optoelectronic conversion layer, a nonvolatile memory layer, a piezoelectric layer, an n-type semiconductor and a p-type semiconductor; the at least one graphene layer includes a single graphene layer; the at least one electrode element includes first and second electrodes electrically connected to a first region and a second region of the graphene layer, respectively; and the at least one functional layer includes a plurality of layers one of laterally arranged and stacked in a direction perpendicular to a surface of the graphene layer between the graphene layer and the second electrode, and at least two of the plurality of layers include diff erent materials from each other; wherein the at least one insertion layer includes first and second insertion layers, wherein the first insertion layer is in direct contact with the at least one graphene layer and the first electrode, and wherein the second insertion layer is in direct contact with the at least one graphene layer and the at least one functional layer. Previously presented
The graphene device of claim 37, wherein the second insertion layer includes a diff erent material than the at least one functional layer and the at least one graphene layer. Previously presented
The graphene device of claim 37, wherein the at least one graphene layer is between a substrate and at least one of a gate and a gate insulation layer. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (single graphene layer, with functional layer and insertion layers)
Materials described outside the worked examples.
resistance change material
phase change material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 41, when the functional layer F₁₂ C is mechanically deformed, that is, when the functional layer F₁₂ C is compressed or expanded, electrical energy may be …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 300–3000 nm | — |
Thickness | 400–700 nm |
Patent
Atlas literature
Patent
US 10,680,066Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene device according to at least one example embodiment; [0046]
FIG. 2 is a cross-sectional view of a graphene device according to another example embodiment; [0047]
FIG. 3 is a cross-sectional view of a graphene device according to another example embodiment; [0048]
FIG. 4 is a cross-sectional view of a graphene device according to another example embodiment; [0049]
FIG. 5 is a cross-sectional view of a graphene device according to another example embodiment; [0050]
FIG. 6 is a cross-sectional view of a graphene device according to another example embodiment; [0051]
FIG. 7 is a cross-sectional view of a graphene device according to another example embodiment; [0052]
FIG. 8 is a cross-sectional view of a graphene device according to another example embodiment; [0053]
FIG. 9 is a cross-sectional view of a graphene device according to another example embodiment; [0054]
FIG. 10 is a cross-sectional view of a graphene device according to another example embodiment; [0055]
FIG. 11 is a cross-sectional view of a graphene device according to another example embodiment; 6 Atty. Dkt. No. 2557S I -002307-US [0056]
FIG. 12 is a cross-sectional view of a graphene device according to another example embodiment; [0057]
FIG. 13 is a cross-sectional view of a graphene device according to another example embodiment; [0058]
FIG. 14 is a cross-sectional view of a graphene device according to another example embodiment; [0059]
FIG. 15 is a cross-sectional view of a graphene device according to another example embodiment; [0060]
FIG. 16 is a cross-sectional view of a graphene device according to another example embodiment; [0061]
FIG. 17 is a cross-sectional view of a graphene device according to another example embodiment; [0062]
FIG. 18 is a cross-sectional view of a graphene device according to another example embodiment; [0063]
FIG. 19 is a circuit diagram showing a circuit configuration when the graphene device of
FIG. 20 is a cross-sectional view of a graphene device according to another example embodiment; [0065]
FIGS. 21 C and 22, the gate 100 and the second electrode 160B may be formed of or include transparent materials. The first electrode 160A may also be formed of …
FIG. 22 is a cross-sectional view for explaining a method of manufacturing a graphene device, according to another example embodiment; [0067]
FIGS. 23A-23D are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0068]
FIGS. 24A-24E are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0069]
FIGS. 25A-25E are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0070]
FIGS. 26A-26D are cross-sectional views for explaining a method of manufacturing a graphene device, according to another example embodiment; [0071]
FIG. 27 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to an example embodiment …
FIGS. 28-32 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 29 is an energy diagram for explaining the principle of turning on the graphene device of
FIGS. 30-32 are energy band diagrams for illustrating a method of changing the resistance state (memory state) of the graphene device of
FIG. 31, when no voltage is applied to the gate G12, that is, when a voltage of 0 V is applied as the second voltage Vgs, with a desired, or alternatively …
FIG. 32, when a negative voltage is applied to the gate G12, that is, when a negative voltage is applied as the second voltage Vgs, with a desired, or …
FIG. 33 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 34-37 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 35 is an energy band diagram for explaining the principle of turning on the graphene device of
FIG. 36, by applying a first voltage between the first electrode E₁ 2 and the second electrode E22, a first electric field may be applied between the graphene …
FIG. 37, by applying a second voltage between the first electrode E₁₂ and the second electrode E22, a second electric field may be applied between the graphene …
FIG. 38 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 39-41 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 40 is an energy band diagram for explaining the principle of turning on the graphene device of
FIG. 41, when the functional layer F₁₂ C is mechanically deformed, that is, when the functional layer F₁₂ C is compressed or expanded, electrical energy may be …
FIG. 42 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 43 and 44 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 44 is an energy band diagram when a voltage has been applied to the gate G₁₄ of the graphene device of
FIG. 45 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 46 and 47 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 47 is an energy band diagram when a voltage has been applied to the gate G₁₄ of the graphene device of
FIG. 48 is a cross-sectional view for explaining voltages Vds and Vgs applied between electrodes when a graphene device according to another example embodiment …
FIGS. 49 and 50 are energy band diagrams for explaining a method of operating the graphene device of
FIG. 50 is an energy band diagram illustrating the principle that light is emitted from the functional layer F 1 6A in the graphene device of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
The graphene device of claim 4, wherein the functional layer comprises at least one of a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, and a piezoelectric material. Previously presented
The graphene device of claim 4, wherein the functional layer comprises at least one of transition metal oxide (TMO), a chalcogenide material, a perovskite material, a two-dimensional (2 D) material, and an organic material. Previously presented
A graphene device comprising: a graphene layer; a first electrode electrically connected to a first region of the graphene layer; a second electrode in spatial correspondence to a second region of the graphene layer; a functional layer between the graphene layer and the second electrode and having at least one of nonvolatile memory characteristics and piezoelectric characteristics; a gate facing the functional layer with the graphene layer therebetween; a gate insulation layer between the graphene layer and the gate; a first insertion layer between the functional layer and the graphene layer, the first insertion layer including a different material than the functional layer and the graphene layer, the first insertion layer directly contacting the graphene layer and the functional layer; and a second insertion layer between the functional layer and the second electrode, the second insertion layer including a different material than the functional layer and the second electrode, the second insertion layer directly contacting the functional layer and the second electrode. Previously presented
The graphene device of claim 4, wherein the gate insulation layer is on the gate, the graphene layer is on the gate insulation layer, the first and second electrodes spaced apart from each other are on the graphene layer, and the functional layer is between the graphene layer and the second electrode. Previously presented
The graphene device of claim 4, wherein the graphene layer is on a substrate, the first electrode is on the first region of the graphene layer, the second electrode is between the second region of the graphene layer and the substrate, the functional layer is between the second electrode and the graphene layer, and the gate insulation layer and the gate are sequentially on the graphene layer on the functional layer. Previously presented
The graphene device of claim 4, wherein the functional layer comp ri ses an n-type semiconductor or a p-type semiconductor. Previously presented
The graphene device of claim 4, wherein the functional layer comp ri ses an ambipolar semiconductor. Previously presented
The graphene device of claim 4, wherein the functional layer comprises a plurality of layers laterally arranged, and the plurality of layers comprise an n-type semiconductor layer and a p-type semiconductor layer. Previously presented
The graphene device of claim 4, wherein the functional layer comprises a plurality of layers vertically stacked, and the plurality of layers comprise an n-type semiconductor layer and a p-type semiconductor layer. Withdrawn
The graphene device of claim 4, wherein the functional layer comprises a phase change material, and the graphene device further comprises a heating electrode between the functional layer and the second electrode. Previously presented
The graphene device of claim 4, wherein the functional layer has optoelectronic conversion characteristics. Withdrawn
The graphene device of claim 4, wherein a second functional layer is further between the graphene layer and the second electrode, and the second functional layer has optoelectronic conversion characteristics. Withdrawn
The graphene device of claim 4, wherein at least one of the gate, the first electrode, and the second electrode includes a transparent material. Previously presented
The graphene device of claim 4, wherein the graphene device is a multifunctional device. Previously presented
The graphene device of cla i m 4, wherein the first and second insertion layers are semiconductors or insulators. Original
A graphene device comprising: first and second graphene layers; first and second electrode elements electrically connected to the first and second graphene layers, respectively; a third electrode element in spatial correspondence to a portion of the first graphene layer and a portion of the second graphene layer; a first functional layer between the third electrode element and the first graphene layer; a second functional layer between the third electrode element and the second graphene layer; a gate spaced apart from the first and second graphene layers; a gate insulation layer between the gate and the first and second graphene layers; and an insulation layer between the first functional layer and the second functional layer, wherein at least one of the first and second functional layers has at least one of optoelectronic conversion characteristics, nonvolatile memory characteristics, and piezoelectric characteristics. Previously presented
The graphene device of claim 17, wherein one of the first and second functional layers is an n-type semiconductor, and the other is a p-type semiconductor. Original
The graphene device of claim 17, wherein the graphene device has an ambipolar transistor structure. Original
The graphene device of claim 17, wherein at least one of the first and second functional layers comprises at least one of a light emission material, a photoactive material, a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, and a piezoelectric material. Original
The graphene device of claim 17, wherein at least one of the first and second functional layers comprises at least one of a Group III and V elements-containing compound, TMO, a chalcogenide material, a perovskite material, a 2D material, and an organic material. Original
The graphene device of claim 17, further comprising at least one of: a first insertion layer between the first functional layer and the first graphene layer; a second insertion layer between the first functional layer and the third electrode element; a third insertion layer between the second functional layer and the second graphene layer; and a fourth insertion layer between the second functional layer and the third electrode element. Original
- 33. Canceled
Canceled
The graphene device of claim 36, further comprising: a gate opposite the at least one functional layer with respect to the at least one graphene layer; and a gate insulating layer between the at least one graphene layer and the gate. Previously presented
Canceled
A graphene device comprising: at least one graphene layer; at least one electrode element electrically connected to the at least one graphene layer; at least one functional layer between the at least one electrode element and the at least one graphene layer; wherein: the at least one functional layer is at least one of an optoelectronic conversion layer, a nonvolatile memory layer, a piezoelectric layer, an n-type semiconductor and a p-type semiconductor; the at least one graphene layer includes first and second graphene layers; the at least one electrode includes first and second electrode elements electrically connected to the first and second graphene layers and a third electrode element in spatial correspondence to a portion of the fi r st graphene layer and a portion of the second graphene layer; the at least one functional layer includes a first and second functional layers between the third electrode element and the first and second graphene layers, respectively; and an insulation layer between the first functional layer and the second functional layer. Previously presented
A graphene device comprising: at least one graphene layer; at least one electrode element electrically connected to the at least one graphene layer; at least one functional layer between the at least one electrode element and the at least one graphene layer; and at least one insertion layer between the at least one graphene layer and the at least one electrode element; wherein: the at least one functional layer is at least one of an optoelectronic conversion layer, a nonvolatile memory layer, a piezoelectric layer, an n-type semiconductor and a p-type semiconductor; the at least one graphene layer includes a single graphene layer; the at least one electrode element includes first and second electrodes electrically connected to a first region and a second region of the graphene layer, respectively; and the at least one functional layer includes a plurality of layers one of laterally arranged and stacked in a direction perpendicular to a surface of the graphene layer between the graphene layer and the second electrode, and at least two of the plurality of layers include diff erent materials from each other; wherein the at least one insertion layer includes first and second insertion layers, wherein the first insertion layer is in direct contact with the at least one graphene layer and the first electrode, and wherein the second insertion layer is in direct contact with the at least one graphene layer and the at least one functional layer. Previously presented
The graphene device of claim 37, wherein the second insertion layer includes a diff erent material than the at least one functional layer and the at least one graphene layer. Previously presented
The graphene device of claim 37, wherein the at least one graphene layer is between a substrate and at least one of a gate and a gate insulation layer. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene device (single graphene layer, with functional layer and insertion layers)
Materials described outside the worked examples.
resistance change material
phase change material
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 41, when the functional layer F₁₂ C is mechanically deformed, that is, when the functional layer F₁₂ C is compressed or expanded, electrical energy may be …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 300–3000 nm | — |
Thickness | 400–700 nm |
graphene device (dual graphene layer, complementary/ambipolar structure)
graphene device (dual graphene layer, claim 36 structure)
graphene device (single graphene layer, laterally arranged or stacked functional layers, with insertion layers)
ferroelectric material
multiferroic material
multistable molecules
piezoelectric material
transition metal oxide (TMO)
chalcogenide material
perovskite material
two-dimensional (2D) material
organic material
graphene
light emission material
photoactive material
Group III and V elements-containing compound
| — |
— | 0.4–4 eV | — |
— | 3–4.5 eV | — |
— | 4.5–6 eV | — |
graphene device (dual graphene layer, complementary/ambipolar structure)
graphene device (dual graphene layer, claim 36 structure)
graphene device (single graphene layer, laterally arranged or stacked functional layers, with insertion layers)
ferroelectric material
multiferroic material
multistable molecules
piezoelectric material
transition metal oxide (TMO)
chalcogenide material
perovskite material
two-dimensional (2D) material
organic material
graphene
light emission material
photoactive material
Group III and V elements-containing compound
| — |
— | 0.4–4 eV | — |
— | 3–4.5 eV | — |
— | 4.5–6 eV | — |
graphene device (dual graphene layer, complementary/ambipolar structure)
graphene device (dual graphene layer, claim 36 structure)
graphene device (single graphene layer, laterally arranged or stacked functional layers, with insertion layers)
ferroelectric material
multiferroic material
multistable molecules
piezoelectric material
transition metal oxide (TMO)
chalcogenide material
perovskite material
two-dimensional (2D) material
organic material
graphene
light emission material
photoactive material
Group III and V elements-containing compound
| — |
— | 0.4–4 eV | — |
— | 3–4.5 eV | — |
— | 4.5–6 eV | — |
graphene device (dual graphene layer, complementary/ambipolar structure)
graphene device (dual graphene layer, claim 36 structure)
graphene device (single graphene layer, laterally arranged or stacked functional layers, with insertion layers)
ferroelectric material
multiferroic material
multistable molecules
piezoelectric material
transition metal oxide (TMO)
chalcogenide material
perovskite material
two-dimensional (2D) material
organic material
graphene
light emission material
photoactive material
Group III and V elements-containing compound
| — |
— | 0.4–4 eV | — |
— | 3–4.5 eV | — |
— | 4.5–6 eV | — |