Patent
US 11,420,872epichlorohydrin rubber (ECH, ECO)
perfluoroelastomer (FFKM)
polyacrylate rubber (ACM)
polychloroprene (neoprene) (CR)
polysulfide rubber (PSR)
saniflour (FEPM)
thermoplastic ether ester elastomers (TEEEs) copolyesters
melt processible rubber (MPR)
thermoplastic vulcanizate (TPV)
FIG. 4(C) electrical conductivity data for the GO suspension-derived foam produced by the presently invented process and the hydrothermally reduced GO graphene …
durability, and good thermal conductivity (for fast heat dissipation). Graphene foam structures may be produced by any known method, such as hydrothermal reduction of graphene oxide gel, metal catalyzed/mediated CVD, and sacrificial material-templated productio
Xrd D Spacing | 0.3354–0.36 nm | graphene foam framework |
Density | 0.1–1.5 g/cm3 | graphene foam framework |
Temperature | 1500–2500 °C | — |
Temperature | 300–1500 °C | — |
Temperature | 100–3000 °C | — |
Temperature | 80–300 °C | — |
Duration | 15–120 s | — |
Thickness | 1–10 mm | — |
Duration | 900–7200 s | — |
Thickness | 0.1–50 mm | — |
Temperature | 100–500 °C | — |
Temperature | 50–1500 °C | — |
Duration | 0.5–96 hours | — |
Temperature | 150–300 °C | — |
Duration | 0.2–1 hour | — |
Temperature | 130–230 °C | — |
Duration | 0.5–5 hours | — |
Duration | 48–72 hours | — |
— | 250–500 W | — |
Temperature | 200–400 °C | — |
Temperature | 150–250 °C | — |
Temperature | 80–1500 °C | — |
Thickness | 0.6–1.2 nm | — |
Duration | 1–4 hours | — |
Duration | 1–2 hours | — |
Duration | 0.5–2 hours | — |
Temperature | 800–1050 °C | — |
Duration | 5–16 hours | — |
Temperature | 80–350 °C | — |
Duration | 1–8 hours | — |
Temperature | 1500–2850 °C | — |
Duration | 2–5 hours | — |
Duration | 48–96 hours | — |
Duration | 10–100 minutes | — |
Temperature | 80–500 °C | — |
Duration | 1–5 hours | — |
Duration | 1–10 hours | — |
Thickness | 2–50 nm | — |
Temperature | 200–350 °C | — |
Temperature | 3000–3250 °C | — |
Temperature | ≤ 2500 °C | — |
Thickness | ≤ 0.344 nm | — |
Pressure | ≤ 1 torr | — |
Thickness | ≤ 0.4 nm | — |
Temperature | ≥ 2100 °C | — |
Temperature | ≥ 2500 °C | — |
Temperature | ≥ 80 °C | — |
Temperature | ≥ 1 °C | — |
Temperature | ≥ 300 °C | — |
Temperature | ≥ 500 °C | — |
— | ≥ 350 W | — |
— | ≥ 400 W | — |
Temperature | ≥ 1500 °C | — |
Thickness | ≥ 1 nm | — |
Duration | ≥ 15 minutes | — |
Thickness | ≤ 0.35 nm | — |
Thickness | ≤ 0.336 nm | — |
Thickness | ≤ 0.337 nm | — |
— | ≥ 250 W | — |
— | ≥ 300 W | — |
Temperature | 50–3200 °C | — |
Thickness | 0.3354–0.4 nm | — |
Thickness | 0.337–0.4 nm | — |
Temperature | 100–1500 °C | — |
Thickness | 1–200 nm | — |
Thickness | 1–100 nm | — |
Thickness | 1–40 nm | — |
Thickness | 1–30 nm | — |
Thickness | 2–25 nm | — |
Temperature | 1500–2100 °C | — |
Temperature | 2100–3200 °C | — |
Temperature | 1500–3200 °C | — |
Thickness | ≤ 0.34 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 500 nm | — |
Duration | ≥ 1 hour | — |
— | ≥ 150 W | — |
— | ≥ 200 W | — |
Systems, Devices, and/or Methods for Reactive Graphene and its Applications
epichlorohydrin rubber (ECH, ECO)
perfluoroelastomer (FFKM)
polyacrylate rubber (ACM)
polychloroprene (neoprene) (CR)
polysulfide rubber (PSR)
saniflour (FEPM)
thermoplastic ether ester elastomers (TEEEs) copolyesters
melt processible rubber (MPR)
thermoplastic vulcanizate (TPV)
FIG. 4(C) electrical conductivity data for the GO suspension-derived foam produced by the presently invented process and the hydrothermally reduced GO graphene …
durability, and good thermal conductivity (for fast heat dissipation). Graphene foam structures may be produced by any known method, such as hydrothermal reduction of graphene oxide gel, metal catalyzed/mediated CVD, and sacrificial material-templated productio
Xrd D Spacing | 0.3354–0.36 nm | graphene foam framework |
Density | 0.1–1.5 g/cm3 | graphene foam framework |
Temperature | 1500–2500 °C | — |
Temperature | 300–1500 °C | — |
Temperature | 100–3000 °C | — |
Temperature | 80–300 °C | — |
Duration | 15–120 s | — |
Thickness | 1–10 mm | — |
Duration | 900–7200 s | — |
Thickness | 0.1–50 mm | — |
Temperature | 100–500 °C | — |
Temperature | 50–1500 °C | — |
Duration | 0.5–96 hours | — |
Temperature | 150–300 °C | — |
Duration | 0.2–1 hour | — |
Temperature | 130–230 °C | — |
Duration | 0.5–5 hours | — |
Duration | 48–72 hours | — |
— | 250–500 W | — |
Temperature | 200–400 °C | — |
Temperature | 150–250 °C | — |
Temperature | 80–1500 °C | — |
Thickness | 0.6–1.2 nm | — |
Duration | 1–4 hours | — |
Duration | 1–2 hours | — |
Duration | 0.5–2 hours | — |
Temperature | 800–1050 °C | — |
Duration | 5–16 hours | — |
Temperature | 80–350 °C | — |
Duration | 1–8 hours | — |
Temperature | 1500–2850 °C | — |
Duration | 2–5 hours | — |
Duration | 48–96 hours | — |
Duration | 10–100 minutes | — |
Temperature | 80–500 °C | — |
Duration | 1–5 hours | — |
Duration | 1–10 hours | — |
Thickness | 2–50 nm | — |
Temperature | 200–350 °C | — |
Temperature | 3000–3250 °C | — |
Temperature | ≤ 2500 °C | — |
Thickness | ≤ 0.344 nm | — |
Pressure | ≤ 1 torr | — |
Thickness | ≤ 0.4 nm | — |
Temperature | ≥ 2100 °C | — |
Temperature | ≥ 2500 °C | — |
Temperature | ≥ 80 °C | — |
Temperature | ≥ 1 °C | — |
Temperature | ≥ 300 °C | — |
Temperature | ≥ 500 °C | — |
— | ≥ 350 W | — |
— | ≥ 400 W | — |
Temperature | ≥ 1500 °C | — |
Thickness | ≥ 1 nm | — |
Duration | ≥ 15 minutes | — |
Thickness | ≤ 0.35 nm | — |
Thickness | ≤ 0.336 nm | — |
Thickness | ≤ 0.337 nm | — |
— | ≥ 250 W | — |
— | ≥ 300 W | — |
Temperature | 50–3200 °C | — |
Thickness | 0.3354–0.4 nm | — |
Thickness | 0.337–0.4 nm | — |
Temperature | 100–1500 °C | — |
Thickness | 1–200 nm | — |
Thickness | 1–100 nm | — |
Thickness | 1–40 nm | — |
Thickness | 1–30 nm | — |
Thickness | 2–25 nm | — |
Temperature | 1500–2100 °C | — |
Temperature | 2100–3200 °C | — |
Temperature | 1500–3200 °C | — |
Thickness | ≤ 0.34 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 500 nm | — |
Duration | ≥ 1 hour | — |
— | ≥ 150 W | — |
— | ≥ 200 W | — |
Systems, Devices, and/or Methods for Reactive Graphene and its Applications
epichlorohydrin rubber (ECH, ECO)
perfluoroelastomer (FFKM)
polyacrylate rubber (ACM)
polychloroprene (neoprene) (CR)
polysulfide rubber (PSR)
saniflour (FEPM)
thermoplastic ether ester elastomers (TEEEs) copolyesters
melt processible rubber (MPR)
thermoplastic vulcanizate (TPV)
FIG. 4(C) electrical conductivity data for the GO suspension-derived foam produced by the presently invented process and the hydrothermally reduced GO graphene …
durability, and good thermal conductivity (for fast heat dissipation). Graphene foam structures may be produced by any known method, such as hydrothermal reduction of graphene oxide gel, metal catalyzed/mediated CVD, and sacrificial material-templated productio
Xrd D Spacing | 0.3354–0.36 nm | graphene foam framework |
Density | 0.1–1.5 g/cm3 | graphene foam framework |
Temperature | 1500–2500 °C | — |
Temperature | 300–1500 °C | — |
Temperature | 100–3000 °C | — |
Temperature | 80–300 °C | — |
Duration | 15–120 s | — |
Thickness | 1–10 mm | — |
Duration | 900–7200 s | — |
Thickness | 0.1–50 mm | — |
Temperature | 100–500 °C | — |
Temperature | 50–1500 °C | — |
Duration | 0.5–96 hours | — |
Temperature | 150–300 °C | — |
Duration | 0.2–1 hour | — |
Temperature | 130–230 °C | — |
Duration | 0.5–5 hours | — |
Duration | 48–72 hours | — |
— | 250–500 W | — |
Temperature | 200–400 °C | — |
Temperature | 150–250 °C | — |
Temperature | 80–1500 °C | — |
Thickness | 0.6–1.2 nm | — |
Duration | 1–4 hours | — |
Duration | 1–2 hours | — |
Duration | 0.5–2 hours | — |
Temperature | 800–1050 °C | — |
Duration | 5–16 hours | — |
Temperature | 80–350 °C | — |
Duration | 1–8 hours | — |
Temperature | 1500–2850 °C | — |
Duration | 2–5 hours | — |
Duration | 48–96 hours | — |
Duration | 10–100 minutes | — |
Temperature | 80–500 °C | — |
Duration | 1–5 hours | — |
Duration | 1–10 hours | — |
Thickness | 2–50 nm | — |
Temperature | 200–350 °C | — |
Temperature | 3000–3250 °C | — |
Temperature | ≤ 2500 °C | — |
Thickness | ≤ 0.344 nm | — |
Pressure | ≤ 1 torr | — |
Thickness | ≤ 0.4 nm | — |
Temperature | ≥ 2100 °C | — |
Temperature | ≥ 2500 °C | — |
Temperature | ≥ 80 °C | — |
Temperature | ≥ 1 °C | — |
Temperature | ≥ 300 °C | — |
Temperature | ≥ 500 °C | — |
— | ≥ 350 W | — |
— | ≥ 400 W | — |
Temperature | ≥ 1500 °C | — |
Thickness | ≥ 1 nm | — |
Duration | ≥ 15 minutes | — |
Thickness | ≤ 0.35 nm | — |
Thickness | ≤ 0.336 nm | — |
Thickness | ≤ 0.337 nm | — |
— | ≥ 250 W | — |
— | ≥ 300 W | — |
Temperature | 50–3200 °C | — |
Thickness | 0.3354–0.4 nm | — |
Thickness | 0.337–0.4 nm | — |
Temperature | 100–1500 °C | — |
Thickness | 1–200 nm | — |
Thickness | 1–100 nm | — |
Thickness | 1–40 nm | — |
Thickness | 1–30 nm | — |
Thickness | 2–25 nm | — |
Temperature | 1500–2100 °C | — |
Temperature | 2100–3200 °C | — |
Temperature | 1500–3200 °C | — |
Thickness | ≤ 0.34 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 500 nm | — |
Duration | ≥ 1 hour | — |
— | ≥ 150 W | — |
— | ≥ 200 W | — |
Systems, Devices, and/or Methods for Reactive Graphene and its Applications
epichlorohydrin rubber (ECH, ECO)
perfluoroelastomer (FFKM)
polyacrylate rubber (ACM)
polychloroprene (neoprene) (CR)
polysulfide rubber (PSR)
saniflour (FEPM)
thermoplastic ether ester elastomers (TEEEs) copolyesters
melt processible rubber (MPR)
thermoplastic vulcanizate (TPV)
FIG. 4(C) electrical conductivity data for the GO suspension-derived foam produced by the presently invented process and the hydrothermally reduced GO graphene …
durability, and good thermal conductivity (for fast heat dissipation). Graphene foam structures may be produced by any known method, such as hydrothermal reduction of graphene oxide gel, metal catalyzed/mediated CVD, and sacrificial material-templated productio
Xrd D Spacing | 0.3354–0.36 nm | graphene foam framework |
Density | 0.1–1.5 g/cm3 | graphene foam framework |
Temperature | 1500–2500 °C | — |
Temperature | 300–1500 °C | — |
Temperature | 100–3000 °C | — |
Temperature | 80–300 °C | — |
Duration | 15–120 s | — |
Thickness | 1–10 mm | — |
Duration | 900–7200 s | — |
Thickness | 0.1–50 mm | — |
Temperature | 100–500 °C | — |
Temperature | 50–1500 °C | — |
Duration | 0.5–96 hours | — |
Temperature | 150–300 °C | — |
Duration | 0.2–1 hour | — |
Temperature | 130–230 °C | — |
Duration | 0.5–5 hours | — |
Duration | 48–72 hours | — |
— | 250–500 W | — |
Temperature | 200–400 °C | — |
Temperature | 150–250 °C | — |
Temperature | 80–1500 °C | — |
Thickness | 0.6–1.2 nm | — |
Duration | 1–4 hours | — |
Duration | 1–2 hours | — |
Duration | 0.5–2 hours | — |
Temperature | 800–1050 °C | — |
Duration | 5–16 hours | — |
Temperature | 80–350 °C | — |
Duration | 1–8 hours | — |
Temperature | 1500–2850 °C | — |
Duration | 2–5 hours | — |
Duration | 48–96 hours | — |
Duration | 10–100 minutes | — |
Temperature | 80–500 °C | — |
Duration | 1–5 hours | — |
Duration | 1–10 hours | — |
Thickness | 2–50 nm | — |
Temperature | 200–350 °C | — |
Temperature | 3000–3250 °C | — |
Temperature | ≤ 2500 °C | — |
Thickness | ≤ 0.344 nm | — |
Pressure | ≤ 1 torr | — |
Thickness | ≤ 0.4 nm | — |
Temperature | ≥ 2100 °C | — |
Temperature | ≥ 2500 °C | — |
Temperature | ≥ 80 °C | — |
Temperature | ≥ 1 °C | — |
Temperature | ≥ 300 °C | — |
Temperature | ≥ 500 °C | — |
— | ≥ 350 W | — |
— | ≥ 400 W | — |
Temperature | ≥ 1500 °C | — |
Thickness | ≥ 1 nm | — |
Duration | ≥ 15 minutes | — |
Thickness | ≤ 0.35 nm | — |
Thickness | ≤ 0.336 nm | — |
Thickness | ≤ 0.337 nm | — |
— | ≥ 250 W | — |
— | ≥ 300 W | — |
Temperature | 50–3200 °C | — |
Thickness | 0.3354–0.4 nm | — |
Thickness | 0.337–0.4 nm | — |
Temperature | 100–1500 °C | — |
Thickness | 1–200 nm | — |
Thickness | 1–100 nm | — |
Thickness | 1–40 nm | — |
Thickness | 1–30 nm | — |
Thickness | 2–25 nm | — |
Temperature | 1500–2100 °C | — |
Temperature | 2100–3200 °C | — |
Temperature | 1500–3200 °C | — |
Thickness | ≤ 0.34 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 500 nm | — |
Duration | ≥ 1 hour | — |
— | ≥ 150 W | — |
— | ≥ 200 W | — |
Systems, Devices, and/or Methods for Reactive Graphene and its Applications