Patent
US 9,583,702GRAPHENE-INSERTED PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Yongsung Kim
US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 9,583,702Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a structure of a phase change memory device according to an example embodiment; 3 Atty. Dkt. No. 2557S I -002341- …
FIG. 2 is a cross-sectional view illustrating a phase of a phase change material that changes due to heat generated from a lower electrode in a phase change …
FIGS. 3A through 3F are cross-sectional views illustrating a method of fabricating a phase change memory device according to an example embodiment; [0031]
FIG. 4 is a schematic cross-sectional view of a structure of a phase change memory device according to another example embodiment; and [0032]
FIGS. 5A through 5F are cross-sectional views illustrating a method of fabricating a phase change memory device according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A phase change memory device comprising: a lower electrode; an insulating layer configured to enclose the lower electrode; a graphene layer on the lower electrode; a phase change material layer on the graphene layer and the insulating layer; and an upper electrode on the phase change material layer.
The phase change memory device of claim 1, wherein the graphene layer is only on the lower electrode and is not on the insulating layer.
The phase change memory device of claim 1, wherein a width of the graphene layer is equal to a width of the lower electrode.
The phase change memory device of claim 1, wherein the phase change material layer comprises a germanium antimony tellurium (GST) material. 3
A phase change memory device comprising: a lower clc ctrode; an insulating layer configured to enclose the lower electrode; a graphene layer on the lower electrode and the insulating layer; a phase change material layer on the graphene layer; and an upper electrode on the phase change material layer.
The phase change memory device of claim 5, wherein the graphene layer covers the lower electrode and covers a part of the insulating layer.
The phase change memory device of claim 5, wherein the graphene layer covers the lower electrode and an entirety of the insulating layer.
The phase change memory device of claim 5, wherein the phase change material layer comprises a GST material.
A method of fabricating a phase change memory device, the method comprising: sequentially forming an electrode layer and an insulating layer on a substrate; removing a part of the insulating layer to expose the electrode layer; forming a lower electrode in the removed part of the insulating layer and then planarizing an uppermost layer of the lower electrode and the insulating laver; forming a graphene layer on the lower electrode and the insulating layer; removing the graphene layer on the in sula t ing layer; and 4
The method of claim 9, wherein the graphene layer is formed by using a transfer method or a direct growth method.
The method of claim 9, wherein the electrode layer and the lower electrode are formed of an equal a same material.
The method of claim 9, wherein all of the graphene layer formed on the insulating layer is removed.
The method of claim 9, wherein a part of the graphene layer formed on the insulating layer is removed.
A method of fabricating a phase change memory device, the method comprising: sequentially forming an electrode layer and an insulating layer on a substrate; removing a part of the insulating layer to expose the electrode layer; forming a lower electrode in the removed part of the insulating layer and then planarizing an uppermost layer of the lower electrode and the insulating layer; forming a graphene layer on the lower electrode and the insulating layer; and sequentially forming a phase change material layer and an upper electrode on the graphene layer.
The method of claim 14, wherein the graphene direct growth method.
The method of claim 14, wherein the electrode equal a same material.
The method of claim 14, wherein the graphene electrode and the insulating layer. 6 layer is formed by using a transfer method or a layer and the lower electrode are formed of an layer is formed to cover all of the lower
Layer stacks claimed or described, ordered top of device to substrate.
phase change memory device (graphene on lower electrode only)
phase change memory device (graphene on lower electrode and insulating layer)
Materials described outside the worked examples.
graphene
germanium antimony tellurium (GST)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,583,702Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a structure of a phase change memory device according to an example embodiment; 3 Atty. Dkt. No. 2557S I -002341- …
FIG. 2 is a cross-sectional view illustrating a phase of a phase change material that changes due to heat generated from a lower electrode in a phase change …
FIGS. 3A through 3F are cross-sectional views illustrating a method of fabricating a phase change memory device according to an example embodiment; [0031]
FIG. 4 is a schematic cross-sectional view of a structure of a phase change memory device according to another example embodiment; and [0032]
FIGS. 5A through 5F are cross-sectional views illustrating a method of fabricating a phase change memory device according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A phase change memory device comprising: a lower electrode; an insulating layer configured to enclose the lower electrode; a graphene layer on the lower electrode; a phase change material layer on the graphene layer and the insulating layer; and an upper electrode on the phase change material layer.
The phase change memory device of claim 1, wherein the graphene layer is only on the lower electrode and is not on the insulating layer.
The phase change memory device of claim 1, wherein a width of the graphene layer is equal to a width of the lower electrode.
The phase change memory device of claim 1, wherein the phase change material layer comprises a germanium antimony tellurium (GST) material. 3
A phase change memory device comprising: a lower clc ctrode; an insulating layer configured to enclose the lower electrode; a graphene layer on the lower electrode and the insulating layer; a phase change material layer on the graphene layer; and an upper electrode on the phase change material layer.
The phase change memory device of claim 5, wherein the graphene layer covers the lower electrode and covers a part of the insulating layer.
The phase change memory device of claim 5, wherein the graphene layer covers the lower electrode and an entirety of the insulating layer.
The phase change memory device of claim 5, wherein the phase change material layer comprises a GST material.
A method of fabricating a phase change memory device, the method comprising: sequentially forming an electrode layer and an insulating layer on a substrate; removing a part of the insulating layer to expose the electrode layer; forming a lower electrode in the removed part of the insulating layer and then planarizing an uppermost layer of the lower electrode and the insulating laver; forming a graphene layer on the lower electrode and the insulating layer; removing the graphene layer on the in sula t ing layer; and 4
The method of claim 9, wherein the graphene layer is formed by using a transfer method or a direct growth method.
The method of claim 9, wherein the electrode layer and the lower electrode are formed of an equal a same material.
The method of claim 9, wherein all of the graphene layer formed on the insulating layer is removed.
The method of claim 9, wherein a part of the graphene layer formed on the insulating layer is removed.
A method of fabricating a phase change memory device, the method comprising: sequentially forming an electrode layer and an insulating layer on a substrate; removing a part of the insulating layer to expose the electrode layer; forming a lower electrode in the removed part of the insulating layer and then planarizing an uppermost layer of the lower electrode and the insulating layer; forming a graphene layer on the lower electrode and the insulating layer; and sequentially forming a phase change material layer and an upper electrode on the graphene layer.
The method of claim 14, wherein the graphene direct growth method.
The method of claim 14, wherein the electrode equal a same material.
The method of claim 14, wherein the graphene electrode and the insulating layer. 6 layer is formed by using a transfer method or a layer and the lower electrode are formed of an layer is formed to cover all of the lower
Layer stacks claimed or described, ordered top of device to substrate.
phase change memory device (graphene on lower electrode only)
phase change memory device (graphene on lower electrode and insulating layer)
Materials described outside the worked examples.
graphene
germanium antimony tellurium (GST)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,583,702Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a structure of a phase change memory device according to an example embodiment; 3 Atty. Dkt. No. 2557S I -002341- …
FIG. 2 is a cross-sectional view illustrating a phase of a phase change material that changes due to heat generated from a lower electrode in a phase change …
FIGS. 3A through 3F are cross-sectional views illustrating a method of fabricating a phase change memory device according to an example embodiment; [0031]
FIG. 4 is a schematic cross-sectional view of a structure of a phase change memory device according to another example embodiment; and [0032]
FIGS. 5A through 5F are cross-sectional views illustrating a method of fabricating a phase change memory device according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A phase change memory device comprising: a lower electrode; an insulating layer configured to enclose the lower electrode; a graphene layer on the lower electrode; a phase change material layer on the graphene layer and the insulating layer; and an upper electrode on the phase change material layer.
The phase change memory device of claim 1, wherein the graphene layer is only on the lower electrode and is not on the insulating layer.
The phase change memory device of claim 1, wherein a width of the graphene layer is equal to a width of the lower electrode.
The phase change memory device of claim 1, wherein the phase change material layer comprises a germanium antimony tellurium (GST) material. 3
A phase change memory device comprising: a lower clc ctrode; an insulating layer configured to enclose the lower electrode; a graphene layer on the lower electrode and the insulating layer; a phase change material layer on the graphene layer; and an upper electrode on the phase change material layer.
The phase change memory device of claim 5, wherein the graphene layer covers the lower electrode and covers a part of the insulating layer.
The phase change memory device of claim 5, wherein the graphene layer covers the lower electrode and an entirety of the insulating layer.
The phase change memory device of claim 5, wherein the phase change material layer comprises a GST material.
A method of fabricating a phase change memory device, the method comprising: sequentially forming an electrode layer and an insulating layer on a substrate; removing a part of the insulating layer to expose the electrode layer; forming a lower electrode in the removed part of the insulating layer and then planarizing an uppermost layer of the lower electrode and the insulating laver; forming a graphene layer on the lower electrode and the insulating layer; removing the graphene layer on the in sula t ing layer; and 4
The method of claim 9, wherein the graphene layer is formed by using a transfer method or a direct growth method.
The method of claim 9, wherein the electrode layer and the lower electrode are formed of an equal a same material.
The method of claim 9, wherein all of the graphene layer formed on the insulating layer is removed.
The method of claim 9, wherein a part of the graphene layer formed on the insulating layer is removed.
A method of fabricating a phase change memory device, the method comprising: sequentially forming an electrode layer and an insulating layer on a substrate; removing a part of the insulating layer to expose the electrode layer; forming a lower electrode in the removed part of the insulating layer and then planarizing an uppermost layer of the lower electrode and the insulating layer; forming a graphene layer on the lower electrode and the insulating layer; and sequentially forming a phase change material layer and an upper electrode on the graphene layer.
The method of claim 14, wherein the graphene direct growth method.
The method of claim 14, wherein the electrode equal a same material.
The method of claim 14, wherein the graphene electrode and the insulating layer. 6 layer is formed by using a transfer method or a layer and the lower electrode are formed of an layer is formed to cover all of the lower
Layer stacks claimed or described, ordered top of device to substrate.
phase change memory device (graphene on lower electrode only)
phase change memory device (graphene on lower electrode and insulating layer)
Materials described outside the worked examples.
graphene
germanium antimony tellurium (GST)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,583,702Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view of a structure of a phase change memory device according to an example embodiment; 3 Atty. Dkt. No. 2557S I -002341- …
FIG. 2 is a cross-sectional view illustrating a phase of a phase change material that changes due to heat generated from a lower electrode in a phase change …
FIGS. 3A through 3F are cross-sectional views illustrating a method of fabricating a phase change memory device according to an example embodiment; [0031]
FIG. 4 is a schematic cross-sectional view of a structure of a phase change memory device according to another example embodiment; and [0032]
FIGS. 5A through 5F are cross-sectional views illustrating a method of fabricating a phase change memory device according to another example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A phase change memory device comprising: a lower electrode; an insulating layer configured to enclose the lower electrode; a graphene layer on the lower electrode; a phase change material layer on the graphene layer and the insulating layer; and an upper electrode on the phase change material layer.
The phase change memory device of claim 1, wherein the graphene layer is only on the lower electrode and is not on the insulating layer.
The phase change memory device of claim 1, wherein a width of the graphene layer is equal to a width of the lower electrode.
The phase change memory device of claim 1, wherein the phase change material layer comprises a germanium antimony tellurium (GST) material. 3
A phase change memory device comprising: a lower clc ctrode; an insulating layer configured to enclose the lower electrode; a graphene layer on the lower electrode and the insulating layer; a phase change material layer on the graphene layer; and an upper electrode on the phase change material layer.
The phase change memory device of claim 5, wherein the graphene layer covers the lower electrode and covers a part of the insulating layer.
The phase change memory device of claim 5, wherein the graphene layer covers the lower electrode and an entirety of the insulating layer.
The phase change memory device of claim 5, wherein the phase change material layer comprises a GST material.
A method of fabricating a phase change memory device, the method comprising: sequentially forming an electrode layer and an insulating layer on a substrate; removing a part of the insulating layer to expose the electrode layer; forming a lower electrode in the removed part of the insulating layer and then planarizing an uppermost layer of the lower electrode and the insulating laver; forming a graphene layer on the lower electrode and the insulating layer; removing the graphene layer on the in sula t ing layer; and 4
The method of claim 9, wherein the graphene layer is formed by using a transfer method or a direct growth method.
The method of claim 9, wherein the electrode layer and the lower electrode are formed of an equal a same material.
The method of claim 9, wherein all of the graphene layer formed on the insulating layer is removed.
The method of claim 9, wherein a part of the graphene layer formed on the insulating layer is removed.
A method of fabricating a phase change memory device, the method comprising: sequentially forming an electrode layer and an insulating layer on a substrate; removing a part of the insulating layer to expose the electrode layer; forming a lower electrode in the removed part of the insulating layer and then planarizing an uppermost layer of the lower electrode and the insulating layer; forming a graphene layer on the lower electrode and the insulating layer; and sequentially forming a phase change material layer and an upper electrode on the graphene layer.
The method of claim 14, wherein the graphene direct growth method.
The method of claim 14, wherein the electrode equal a same material.
The method of claim 14, wherein the graphene electrode and the insulating layer. 6 layer is formed by using a transfer method or a layer and the lower electrode are formed of an layer is formed to cover all of the lower
Layer stacks claimed or described, ordered top of device to substrate.
phase change memory device (graphene on lower electrode only)
phase change memory device (graphene on lower electrode and insulating layer)
Materials described outside the worked examples.
graphene
germanium antimony tellurium (GST)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.