Patent
US 9,620,597Graphene optoelectronic detector and method for detecting photonic and electromagnetic energy by using the same
YON-HUA TZENG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,620,597Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view showing a manufacturing process of a graphene optoelectronic detector according to Embodiment 1 of the 7 present invention; …
FIG. 2 (c), since a uniform and high electric field with high current density is generated between two electrodes, the scattered charge carriers maintain in the …
FIG. 3, when a 1 V bias was applied to the graphene optoelectronic detector of the present embodiment,(blue light 405 nm, 68 mW) was applied onto the graphene …
FIG. 4 (a)-(c), when the laser light was applied at the interface between the electrodes and the graphene, 13 a photovoltaics effect can be observed. However, …
FIG. 5. Herein, when a photonic and electromagnetic energy 21 is applied onto the high-drift carrier moving 16 region 12a, the charge carrier at the high-drift …
FIG. 6 (e). Embodiment 4 The structure and the manufacturing process of the graphene optoelectronic detector of the present embodiment are similar to those …
FIG. 8 (a), the first 5 electrode 151 further comprises a first extension portion 15 1 a, the second electrode 152 further comprises a second extension portion …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for detecting photonic and electromagnetic energy, comprising the following steps: providing a graphene optoelectronic detector, comprising: 5 an insulating substrate with a graphene layer disposed thereon; a first electrode disposed on the graphene layer or between the graphene layer and the insulating substrate; and a second electrode disposed on the graphene layer or between the graphene layer and the insulating substrate, wherein there is a predetermined distance between the first electrode and the second electrode, and the first electrode and the second electrode are at different electrical potentials, wherein a high-drift carrier moving region is disposed between the first electrode and the second electrode, and a low-drift carrier moving 15 region is disposed outside the high-drift carrier moving region, applying photonic and electromagnetic energy onto the high-drift carrier moving region, wherein charge carriers in the high-drift carrier moving region scatter to the low-drift carrier moving region to obtain a decreased current value between the first electrode and the second 20 electrode; and detecting and calculating the decreased current value to obtain an amount of the photonic and electromagnetic energy.
The method as claimed in claim 1, wherein the photonic and electromagnetic energy is infrared, visible light, UV light, electromagnetic 25 radiation, extreme UV light, high-level radiation, or magnetic field.
The method as claimed in claim 1, wherein the predetermined 21 distance is in a range from 1 p m to 1000 pm.
The method as claimed in claim 1, wherein the graphene layer is a monolayer graphene layer.
The method as claimed in claim 1, wherein the graphene layer is 5 a stack of multiple layers of monolayer graphene.
The method as claimed in claim 1, wherein the first electrode further comprises a first extension portion, the second electrode further comprises a second extension portion, the first extension portion extends from the first electrode toward the second electrode, the second extension 10 portion extends from the second electrode toward the first electrode, and the predetermined distance is between the first extension portion and the second extension portion.
15 8. The method as claimed in claim 1, wherein the graphene layer is a patterned graphene layer, which comprises: a connection portion for connecting the first electrode and the second electrode, and at least one lateral extension portion, wherein an extension direction of the lateral extension portion intersects a longitudinal direction of the connection 20 portion, and a width of the connection portion is smaller than those of the first electrode and the second electrode.
The method as claimed in claim 1, wherein at least one recess is further disposed in the graphene layer, which locates around the first electrode and the second electrode but does not locate on the high-drift 25 carrier moving region between the first electrode and the second electrode.
A graphene optoelectronic detector, comprising: 22 an insulating substrate with a graphene layer disposed thereon; a first electrode disposed on the graphene layer or between the graphene layer and the insulating substrate; and a second electrode disposed on the graphene layer or between the 5 graphene layer and the insulating substrate, wherein there is a predetermined distance between the first electrode and the second electrode, and the first electrode and the second electrode is electronegativity, wherein a high-drift carrier moving region is disposed between the 10 first electrode and the second electrode, and a low-drift carrier moving region is disposed outside the high-drift carrier moving region, and wherein, when photonic and electromagnetic energy is applied onto the high-drift carrier moving region, charge carriers in the high-drift carrier moving region scatter to the low-drift carrier moving region to obtain a decreased current value between the first electrode and the second electrode, and an amount of the photonic and electromagnetic energy is obtained by detecting and calculating the decreased current value.
11. The graphene optoelectronic detector as claimed in claim 10, wherein the photonic and electromagnetic energy is infrared, visible light, 20 UV light, electromagnetic radiation, extreme UV light, high-level radiation, or magnetic field.
The graphene optoelectronic detector as claimed in claim 10, wherein the predetermined distance is in a range from 1 p m to 1000 pm.
The graphene optoelectronic detector as claimed in claim 10, the 25 graphene layer is a monolayer graphene layer or a stack of multiple layers of graphene.
The graphene optoelectronic detector as claimed in claim 10, the first electrode further comprises a first extension portion, the second electrode further comprises a second extension portion, the first extension portion extends from the first electrode toward the second electrode, the 5 second extension portion extends from the second electrode toward the first electrode, and the predetermined distance is between the first extension portion and the second extension portion.
10 16. The graphene optoelectronic detector as claimed in claim 10, wherein the graphene layer in the high-drift carrier moving region further comprises: a connection portion for connecting the first electrode and the second electrode, and at least one lateral extension portion, wherein an extension direction of the lateral extension portion intersects a longitudinal direction of the connection portion, and a width of the connection portion is smaller than those of the first electrode and the second electrode.
The graphene optoelectronic detector as claimed in claim 10, wherein at least one recess is further disposed in the graphene layer, which locates around the first electrode and the second electrode but does not 20 locate on the high-drift carrier moving region between the first electrode and the second electrode. 24
Layer stacks claimed or described, ordered top of device to substrate.
graphene optoelectronic detector
graphene optoelectronic detector with extension electrode portions
graphene optoelectronic detector with patterned graphene (connection + lateral extension portions)
Materials described outside the worked examples.
graphene
C
insulating substrate
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 (c), since a uniform and high electric field with high current density is generated between two electrodes, the scattered charge carriers maintain in the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron mobility of graphene at room temperature | 15000 cm2/V·s | C |
optical transmittance of graphene (monolayer) | 97 % |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,620,597Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view showing a manufacturing process of a graphene optoelectronic detector according to Embodiment 1 of the 7 present invention; …
FIG. 2 (c), since a uniform and high electric field with high current density is generated between two electrodes, the scattered charge carriers maintain in the …
FIG. 3, when a 1 V bias was applied to the graphene optoelectronic detector of the present embodiment,(blue light 405 nm, 68 mW) was applied onto the graphene …
FIG. 4 (a)-(c), when the laser light was applied at the interface between the electrodes and the graphene, 13 a photovoltaics effect can be observed. However, …
FIG. 5. Herein, when a photonic and electromagnetic energy 21 is applied onto the high-drift carrier moving 16 region 12a, the charge carrier at the high-drift …
FIG. 6 (e). Embodiment 4 The structure and the manufacturing process of the graphene optoelectronic detector of the present embodiment are similar to those …
FIG. 8 (a), the first 5 electrode 151 further comprises a first extension portion 15 1 a, the second electrode 152 further comprises a second extension portion …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for detecting photonic and electromagnetic energy, comprising the following steps: providing a graphene optoelectronic detector, comprising: 5 an insulating substrate with a graphene layer disposed thereon; a first electrode disposed on the graphene layer or between the graphene layer and the insulating substrate; and a second electrode disposed on the graphene layer or between the graphene layer and the insulating substrate, wherein there is a predetermined distance between the first electrode and the second electrode, and the first electrode and the second electrode are at different electrical potentials, wherein a high-drift carrier moving region is disposed between the first electrode and the second electrode, and a low-drift carrier moving 15 region is disposed outside the high-drift carrier moving region, applying photonic and electromagnetic energy onto the high-drift carrier moving region, wherein charge carriers in the high-drift carrier moving region scatter to the low-drift carrier moving region to obtain a decreased current value between the first electrode and the second 20 electrode; and detecting and calculating the decreased current value to obtain an amount of the photonic and electromagnetic energy.
The method as claimed in claim 1, wherein the photonic and electromagnetic energy is infrared, visible light, UV light, electromagnetic 25 radiation, extreme UV light, high-level radiation, or magnetic field.
The method as claimed in claim 1, wherein the predetermined 21 distance is in a range from 1 p m to 1000 pm.
The method as claimed in claim 1, wherein the graphene layer is a monolayer graphene layer.
The method as claimed in claim 1, wherein the graphene layer is 5 a stack of multiple layers of monolayer graphene.
The method as claimed in claim 1, wherein the first electrode further comprises a first extension portion, the second electrode further comprises a second extension portion, the first extension portion extends from the first electrode toward the second electrode, the second extension 10 portion extends from the second electrode toward the first electrode, and the predetermined distance is between the first extension portion and the second extension portion.
15 8. The method as claimed in claim 1, wherein the graphene layer is a patterned graphene layer, which comprises: a connection portion for connecting the first electrode and the second electrode, and at least one lateral extension portion, wherein an extension direction of the lateral extension portion intersects a longitudinal direction of the connection 20 portion, and a width of the connection portion is smaller than those of the first electrode and the second electrode.
The method as claimed in claim 1, wherein at least one recess is further disposed in the graphene layer, which locates around the first electrode and the second electrode but does not locate on the high-drift 25 carrier moving region between the first electrode and the second electrode.
A graphene optoelectronic detector, comprising: 22 an insulating substrate with a graphene layer disposed thereon; a first electrode disposed on the graphene layer or between the graphene layer and the insulating substrate; and a second electrode disposed on the graphene layer or between the 5 graphene layer and the insulating substrate, wherein there is a predetermined distance between the first electrode and the second electrode, and the first electrode and the second electrode is electronegativity, wherein a high-drift carrier moving region is disposed between the 10 first electrode and the second electrode, and a low-drift carrier moving region is disposed outside the high-drift carrier moving region, and wherein, when photonic and electromagnetic energy is applied onto the high-drift carrier moving region, charge carriers in the high-drift carrier moving region scatter to the low-drift carrier moving region to obtain a decreased current value between the first electrode and the second electrode, and an amount of the photonic and electromagnetic energy is obtained by detecting and calculating the decreased current value.
11. The graphene optoelectronic detector as claimed in claim 10, wherein the photonic and electromagnetic energy is infrared, visible light, 20 UV light, electromagnetic radiation, extreme UV light, high-level radiation, or magnetic field.
The graphene optoelectronic detector as claimed in claim 10, wherein the predetermined distance is in a range from 1 p m to 1000 pm.
The graphene optoelectronic detector as claimed in claim 10, the 25 graphene layer is a monolayer graphene layer or a stack of multiple layers of graphene.
The graphene optoelectronic detector as claimed in claim 10, the first electrode further comprises a first extension portion, the second electrode further comprises a second extension portion, the first extension portion extends from the first electrode toward the second electrode, the 5 second extension portion extends from the second electrode toward the first electrode, and the predetermined distance is between the first extension portion and the second extension portion.
10 16. The graphene optoelectronic detector as claimed in claim 10, wherein the graphene layer in the high-drift carrier moving region further comprises: a connection portion for connecting the first electrode and the second electrode, and at least one lateral extension portion, wherein an extension direction of the lateral extension portion intersects a longitudinal direction of the connection portion, and a width of the connection portion is smaller than those of the first electrode and the second electrode.
The graphene optoelectronic detector as claimed in claim 10, wherein at least one recess is further disposed in the graphene layer, which locates around the first electrode and the second electrode but does not 20 locate on the high-drift carrier moving region between the first electrode and the second electrode. 24
Layer stacks claimed or described, ordered top of device to substrate.
graphene optoelectronic detector
graphene optoelectronic detector with extension electrode portions
graphene optoelectronic detector with patterned graphene (connection + lateral extension portions)
Materials described outside the worked examples.
graphene
C
insulating substrate
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 (c), since a uniform and high electric field with high current density is generated between two electrodes, the scattered charge carriers maintain in the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron mobility of graphene at room temperature | 15000 cm2/V·s | C |
optical transmittance of graphene (monolayer) | 97 % |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,620,597Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view showing a manufacturing process of a graphene optoelectronic detector according to Embodiment 1 of the 7 present invention; …
FIG. 2 (c), since a uniform and high electric field with high current density is generated between two electrodes, the scattered charge carriers maintain in the …
FIG. 3, when a 1 V bias was applied to the graphene optoelectronic detector of the present embodiment,(blue light 405 nm, 68 mW) was applied onto the graphene …
FIG. 4 (a)-(c), when the laser light was applied at the interface between the electrodes and the graphene, 13 a photovoltaics effect can be observed. However, …
FIG. 5. Herein, when a photonic and electromagnetic energy 21 is applied onto the high-drift carrier moving 16 region 12a, the charge carrier at the high-drift …
FIG. 6 (e). Embodiment 4 The structure and the manufacturing process of the graphene optoelectronic detector of the present embodiment are similar to those …
FIG. 8 (a), the first 5 electrode 151 further comprises a first extension portion 15 1 a, the second electrode 152 further comprises a second extension portion …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for detecting photonic and electromagnetic energy, comprising the following steps: providing a graphene optoelectronic detector, comprising: 5 an insulating substrate with a graphene layer disposed thereon; a first electrode disposed on the graphene layer or between the graphene layer and the insulating substrate; and a second electrode disposed on the graphene layer or between the graphene layer and the insulating substrate, wherein there is a predetermined distance between the first electrode and the second electrode, and the first electrode and the second electrode are at different electrical potentials, wherein a high-drift carrier moving region is disposed between the first electrode and the second electrode, and a low-drift carrier moving 15 region is disposed outside the high-drift carrier moving region, applying photonic and electromagnetic energy onto the high-drift carrier moving region, wherein charge carriers in the high-drift carrier moving region scatter to the low-drift carrier moving region to obtain a decreased current value between the first electrode and the second 20 electrode; and detecting and calculating the decreased current value to obtain an amount of the photonic and electromagnetic energy.
The method as claimed in claim 1, wherein the photonic and electromagnetic energy is infrared, visible light, UV light, electromagnetic 25 radiation, extreme UV light, high-level radiation, or magnetic field.
The method as claimed in claim 1, wherein the predetermined 21 distance is in a range from 1 p m to 1000 pm.
The method as claimed in claim 1, wherein the graphene layer is a monolayer graphene layer.
The method as claimed in claim 1, wherein the graphene layer is 5 a stack of multiple layers of monolayer graphene.
The method as claimed in claim 1, wherein the first electrode further comprises a first extension portion, the second electrode further comprises a second extension portion, the first extension portion extends from the first electrode toward the second electrode, the second extension 10 portion extends from the second electrode toward the first electrode, and the predetermined distance is between the first extension portion and the second extension portion.
15 8. The method as claimed in claim 1, wherein the graphene layer is a patterned graphene layer, which comprises: a connection portion for connecting the first electrode and the second electrode, and at least one lateral extension portion, wherein an extension direction of the lateral extension portion intersects a longitudinal direction of the connection 20 portion, and a width of the connection portion is smaller than those of the first electrode and the second electrode.
The method as claimed in claim 1, wherein at least one recess is further disposed in the graphene layer, which locates around the first electrode and the second electrode but does not locate on the high-drift 25 carrier moving region between the first electrode and the second electrode.
A graphene optoelectronic detector, comprising: 22 an insulating substrate with a graphene layer disposed thereon; a first electrode disposed on the graphene layer or between the graphene layer and the insulating substrate; and a second electrode disposed on the graphene layer or between the 5 graphene layer and the insulating substrate, wherein there is a predetermined distance between the first electrode and the second electrode, and the first electrode and the second electrode is electronegativity, wherein a high-drift carrier moving region is disposed between the 10 first electrode and the second electrode, and a low-drift carrier moving region is disposed outside the high-drift carrier moving region, and wherein, when photonic and electromagnetic energy is applied onto the high-drift carrier moving region, charge carriers in the high-drift carrier moving region scatter to the low-drift carrier moving region to obtain a decreased current value between the first electrode and the second electrode, and an amount of the photonic and electromagnetic energy is obtained by detecting and calculating the decreased current value.
11. The graphene optoelectronic detector as claimed in claim 10, wherein the photonic and electromagnetic energy is infrared, visible light, 20 UV light, electromagnetic radiation, extreme UV light, high-level radiation, or magnetic field.
The graphene optoelectronic detector as claimed in claim 10, wherein the predetermined distance is in a range from 1 p m to 1000 pm.
The graphene optoelectronic detector as claimed in claim 10, the 25 graphene layer is a monolayer graphene layer or a stack of multiple layers of graphene.
The graphene optoelectronic detector as claimed in claim 10, the first electrode further comprises a first extension portion, the second electrode further comprises a second extension portion, the first extension portion extends from the first electrode toward the second electrode, the 5 second extension portion extends from the second electrode toward the first electrode, and the predetermined distance is between the first extension portion and the second extension portion.
10 16. The graphene optoelectronic detector as claimed in claim 10, wherein the graphene layer in the high-drift carrier moving region further comprises: a connection portion for connecting the first electrode and the second electrode, and at least one lateral extension portion, wherein an extension direction of the lateral extension portion intersects a longitudinal direction of the connection portion, and a width of the connection portion is smaller than those of the first electrode and the second electrode.
The graphene optoelectronic detector as claimed in claim 10, wherein at least one recess is further disposed in the graphene layer, which locates around the first electrode and the second electrode but does not 20 locate on the high-drift carrier moving region between the first electrode and the second electrode. 24
Layer stacks claimed or described, ordered top of device to substrate.
graphene optoelectronic detector
graphene optoelectronic detector with extension electrode portions
graphene optoelectronic detector with patterned graphene (connection + lateral extension portions)
Materials described outside the worked examples.
graphene
C
insulating substrate
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 (c), since a uniform and high electric field with high current density is generated between two electrodes, the scattered charge carriers maintain in the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron mobility of graphene at room temperature | 15000 cm2/V·s | C |
optical transmittance of graphene (monolayer) | 97 % |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,620,597Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view showing a manufacturing process of a graphene optoelectronic detector according to Embodiment 1 of the 7 present invention; …
FIG. 2 (c), since a uniform and high electric field with high current density is generated between two electrodes, the scattered charge carriers maintain in the …
FIG. 3, when a 1 V bias was applied to the graphene optoelectronic detector of the present embodiment,(blue light 405 nm, 68 mW) was applied onto the graphene …
FIG. 4 (a)-(c), when the laser light was applied at the interface between the electrodes and the graphene, 13 a photovoltaics effect can be observed. However, …
FIG. 5. Herein, when a photonic and electromagnetic energy 21 is applied onto the high-drift carrier moving 16 region 12a, the charge carrier at the high-drift …
FIG. 6 (e). Embodiment 4 The structure and the manufacturing process of the graphene optoelectronic detector of the present embodiment are similar to those …
FIG. 8 (a), the first 5 electrode 151 further comprises a first extension portion 15 1 a, the second electrode 152 further comprises a second extension portion …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for detecting photonic and electromagnetic energy, comprising the following steps: providing a graphene optoelectronic detector, comprising: 5 an insulating substrate with a graphene layer disposed thereon; a first electrode disposed on the graphene layer or between the graphene layer and the insulating substrate; and a second electrode disposed on the graphene layer or between the graphene layer and the insulating substrate, wherein there is a predetermined distance between the first electrode and the second electrode, and the first electrode and the second electrode are at different electrical potentials, wherein a high-drift carrier moving region is disposed between the first electrode and the second electrode, and a low-drift carrier moving 15 region is disposed outside the high-drift carrier moving region, applying photonic and electromagnetic energy onto the high-drift carrier moving region, wherein charge carriers in the high-drift carrier moving region scatter to the low-drift carrier moving region to obtain a decreased current value between the first electrode and the second 20 electrode; and detecting and calculating the decreased current value to obtain an amount of the photonic and electromagnetic energy.
The method as claimed in claim 1, wherein the photonic and electromagnetic energy is infrared, visible light, UV light, electromagnetic 25 radiation, extreme UV light, high-level radiation, or magnetic field.
The method as claimed in claim 1, wherein the predetermined 21 distance is in a range from 1 p m to 1000 pm.
The method as claimed in claim 1, wherein the graphene layer is a monolayer graphene layer.
The method as claimed in claim 1, wherein the graphene layer is 5 a stack of multiple layers of monolayer graphene.
The method as claimed in claim 1, wherein the first electrode further comprises a first extension portion, the second electrode further comprises a second extension portion, the first extension portion extends from the first electrode toward the second electrode, the second extension 10 portion extends from the second electrode toward the first electrode, and the predetermined distance is between the first extension portion and the second extension portion.
15 8. The method as claimed in claim 1, wherein the graphene layer is a patterned graphene layer, which comprises: a connection portion for connecting the first electrode and the second electrode, and at least one lateral extension portion, wherein an extension direction of the lateral extension portion intersects a longitudinal direction of the connection 20 portion, and a width of the connection portion is smaller than those of the first electrode and the second electrode.
The method as claimed in claim 1, wherein at least one recess is further disposed in the graphene layer, which locates around the first electrode and the second electrode but does not locate on the high-drift 25 carrier moving region between the first electrode and the second electrode.
A graphene optoelectronic detector, comprising: 22 an insulating substrate with a graphene layer disposed thereon; a first electrode disposed on the graphene layer or between the graphene layer and the insulating substrate; and a second electrode disposed on the graphene layer or between the 5 graphene layer and the insulating substrate, wherein there is a predetermined distance between the first electrode and the second electrode, and the first electrode and the second electrode is electronegativity, wherein a high-drift carrier moving region is disposed between the 10 first electrode and the second electrode, and a low-drift carrier moving region is disposed outside the high-drift carrier moving region, and wherein, when photonic and electromagnetic energy is applied onto the high-drift carrier moving region, charge carriers in the high-drift carrier moving region scatter to the low-drift carrier moving region to obtain a decreased current value between the first electrode and the second electrode, and an amount of the photonic and electromagnetic energy is obtained by detecting and calculating the decreased current value.
11. The graphene optoelectronic detector as claimed in claim 10, wherein the photonic and electromagnetic energy is infrared, visible light, 20 UV light, electromagnetic radiation, extreme UV light, high-level radiation, or magnetic field.
The graphene optoelectronic detector as claimed in claim 10, wherein the predetermined distance is in a range from 1 p m to 1000 pm.
The graphene optoelectronic detector as claimed in claim 10, the 25 graphene layer is a monolayer graphene layer or a stack of multiple layers of graphene.
The graphene optoelectronic detector as claimed in claim 10, the first electrode further comprises a first extension portion, the second electrode further comprises a second extension portion, the first extension portion extends from the first electrode toward the second electrode, the 5 second extension portion extends from the second electrode toward the first electrode, and the predetermined distance is between the first extension portion and the second extension portion.
10 16. The graphene optoelectronic detector as claimed in claim 10, wherein the graphene layer in the high-drift carrier moving region further comprises: a connection portion for connecting the first electrode and the second electrode, and at least one lateral extension portion, wherein an extension direction of the lateral extension portion intersects a longitudinal direction of the connection portion, and a width of the connection portion is smaller than those of the first electrode and the second electrode.
The graphene optoelectronic detector as claimed in claim 10, wherein at least one recess is further disposed in the graphene layer, which locates around the first electrode and the second electrode but does not 20 locate on the high-drift carrier moving region between the first electrode and the second electrode. 24
Layer stacks claimed or described, ordered top of device to substrate.
graphene optoelectronic detector
graphene optoelectronic detector with extension electrode portions
graphene optoelectronic detector with patterned graphene (connection + lateral extension portions)
Materials described outside the worked examples.
graphene
C
insulating substrate
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 (c), since a uniform and high electric field with high current density is generated between two electrodes, the scattered charge carriers maintain in the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron mobility of graphene at room temperature | 15000 cm2/V·s | C |
optical transmittance of graphene (monolayer) | 97 % |
Related documents with shared materials, methods, properties, or citations.
graphene optoelectronic detector with recesses in graphene layer
C |
Pressure | 0.1 Torr | — |
Pressure | 0–2 Torr | — |
Voltage | 0.2–1 V | — |
Pressure | ≤ 3.94 Torr | — |
Pressure | ≥ 0.5 Torr | — |
graphene optoelectronic detector with recesses in graphene layer
C |
Pressure | 0.1 Torr | — |
Pressure | 0–2 Torr | — |
Voltage | 0.2–1 V | — |
Pressure | ≤ 3.94 Torr | — |
Pressure | ≥ 0.5 Torr | — |
graphene optoelectronic detector with recesses in graphene layer
C |
Pressure | 0.1 Torr | — |
Pressure | 0–2 Torr | — |
Voltage | 0.2–1 V | — |
Pressure | ≤ 3.94 Torr | — |
Pressure | ≥ 0.5 Torr | — |
graphene optoelectronic detector with recesses in graphene layer
C |
Pressure | 0.1 Torr | — |
Pressure | 0–2 Torr | — |
Voltage | 0.2–1 V | — |
Pressure | ≤ 3.94 Torr | — |
Pressure | ≥ 0.5 Torr | — |