LINEAR SHOWERHEAD FOR GROWING GaN

Ye Huang; Peng Liu; Jianhui Wang; Jingquan Lu

Patent

Atlas literature

Patent

US 12,060,652 B2

LINEAR SHOWERHEAD FOR GROWING GaN

Ye Huang, Peng Liu, Jianhui Wang, Jingquan Lu

SINO NITRIDE SEMICONDUCTOR CO., LTD. (CN)·Aug. 13, 2024·US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 is a view illustrating the structure of a showerhead according to embodiment one of the present application.

FIG. 2

FIG. 2 is a view illustrating the structure of a ﬁrst gas base according to embodiment one of the present application.

FIG. 3

FIG. 3 is a full section view of the ﬁrst gas base according to embodiment one of the present application.

FIG. 4

FIG. 4 is a view illustrating the structure of a second gas base according to embodiment one of the present applica- tion.

FIG. 5

FIG. 5 is a full section view of the second gas base according to embodiment one of the present application.

FIG. 6

FIG. 6 is a view illustrating the structure of a third gas base according to embodiment one of the present applica- tion.

FIG. 7

FIG. 7 is a full section view of the third gas base according to embodiment one of the present application.

FIG. 8

FIG. 8 is a view illustrating the structure of a showerhead according to embodiment four of the present application.

FIG. 9

FIG. 9 is a view illustrating the structure of a ﬁrst gas base according to embodiment four of the present application.

FIG. 10

FIG. 10 is a full section view of the ﬁrst gas base according to embodiment four of the present application.

FIG. 11

FIG. 11 is a view illustrating the structure of a second gas base according to embodiment four of the present applica- tion.

FIG. 12

FIG. 12 is a full section view of the second gas base according to embodiment four of the present application.

FIG. 13

FIG. 13 is a view illustrating the structure of a shower- head according to embodiment ﬁve of the present applica- tion.

FIG. 14

FIG. 14 is a view illustrating the structure of a ﬁrst gas base according to embodiment ﬁve of the present applica- tion.

FIG. 15

FIG. 15 is a full section view of the ﬁrst gas base according to embodiment ﬁve of the present application.

FIG. 16

FIG. 16 is a full section view of a ﬁrst central gas passage according to embodiment ﬁve of the present application.

FIG. 17

FIG. 17 is a view illustrating the structure of a second gas base according to embodiment ﬁve of the present applica- tion.

FIG. 18

FIG. 18 is a full section view of the second gas base according to embodiment ﬁve of the present application.

FIG. 19

FIG. 19 is a full section view of a second central gas passage according to embodiment ﬁve of the present appli- cation.

FIG. 20

FIG. 20 is a view illustrating the structure of a shower- head according to embodiment six of the present applica- tion.

FIG. 21

FIG. 21 is a view illustrating the structure of a ﬁrst gas base according to embodiment six of the present application. 5

FIG. 22

FIG. 22 is a view illustrating the structure of a second gas base according to embodiment six of the present application.

FIG. 23

FIG. 23 is a view illustrating the structure of a third gas base according to embodiment six of the present application.

FIG. 24

FIG. 24 is a view illustrating the planar sheet structure of 10 a ﬁrst central gas passage and a third central gas passage according to embodiment six of the …

FIG. 25

FIG. 25 is a view illustrating the arcuate sheet structure of a ﬁrst central gas passage and a third central gas passage according to embodiment six of the …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 11 dependent

1
IndependentGaNquartz or ceramiclinear showerhead for growing GaN
A linear showerhead for growing GaN, comprising a ﬁrst gas base, a second gas base, and a third gas base, wherein a plurality of ﬁrst central gas passages are disposed in a middle of the ﬁrst gas base, a ﬁrst gap is disposed between two adjacent ones of the plurality of ﬁrst central gas passages, and a ﬁrst nozzle is disposed at a bottom of one of the plurality of ﬁrst central gas passages along a longitudinal direction of the one of the plurality of ﬁrst central gas passages; wherein the second gas base is disposed upon the ﬁrst gas base, a plurality of second central gas passages are disposed in a middle of the second gas base, a second gap is disposed between two adjacent ones of the plurality of second central gas passages, each of two sides of one of the plurality of second central gas passages along a longitudinal direction of the one of the plurality of second central gas passages is provided with a second nozzle, and the ﬁrst gap is aligned with the second gap; wherein the third gas base comprises a plurality of third central gas passages, one of the plurality of third central gas passages penetrates through the ﬁrst gap and the second gap, and a third nozzle is disposed at a bottom of the one of the plurality of third central gas passages; and B₂ wherein each of the plurality of second central gas pas-sages communicates with the respective ﬁrst gap by the respective second nozzle.
1. 2
  Dependent← claim 1linear showerhead for growing GaN
  The linear showerhead for growing GaN according to claim 1, wherein the plurality of ﬁrst central gas passages are linear tubes and are parallel to each other, the plurality of second central gas passages are linear tubes and are parallel to each other, and the plurality of third central gas passages are sheet tubes and are parallel to each other.
2. 4
  Dependent← claim 1linear showerhead for growing GaN
  The linear showerhead for growing GaN according to claim 1, wherein the plurality of ﬁrst central gas passages are circular, elliptical, parallelogrammatic, triangular, trapezoi-dal, or pentagonal; and wherein the plurality of second central gas passages are circular, elliptical, parallelogrammatic, triangular, trap-ezoidal, or pentagonal.
3. 5
  Dependent← claim 1linear showerhead for growing GaN
  The linear showerhead for growing GaN according to claim 1, wherein a deﬂector is disposed at the bottom of the one of the plurality of ﬁrst central gas passages, the ﬁrst nozzle is disposed at a ﬁrst end of the deﬂector, and a second end of the deﬂector is connected to the one of the plurality of ﬁrst central gas passages.
4. 6
  Dependent← claim 1linear showerhead for growing GaN
  The linear showerhead for growing GaN according to claim 1, wherein the ﬁrst gas base comprises a ﬁrst periph-eral gas passage, the plurality of ﬁrst central gas passages are disposed on an inner side of the ﬁrst peripheral gas passage, and ends of the plurality of ﬁrst central gas passages are in communication with the ﬁrst peripheral gas passage; and wherein the second gas base comprises a second periph-eral gas passage, the plurality of second central gas passages are disposed on an inner side of the second peripheral gas passage, and ends of the plurality of second central gas passages are in communication with the second peripheral gas passage.
5. 9
  Dependent← claim 1linear showerhead for growing GaN
  The linear showerhead for growing GaN according to claim 1, wherein the third gas base further comprises a gas homogenizing cavity, wherein a ﬁrst end of the gas homog-enizing cavity is in communication with the plurality of third central gas passages, and a second end of the gas homog-enizing cavity is provided with a third gas inlet tube. 15 16

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

linear showerhead for growing GaN

quartz or ceramicthird gas base

quartz or ceramicsecond gas base

quartz or ceramicfirst gas base

Materials

Materials described outside the worked examples.

GaN

Growth Target Material

quartz or ceramic

Showerhead Construction Material

gallium chloride

GaCl

Cited prior art

Patents and literature cited by this patent (applicant and examiner references).

Cited patents · 13

US 2005/0142391 A12005/0142391 A1 6/2005 Dmitriev et al.
US 2006/0021574 A12006/0021574 A1 2/2006 Armour et al.
US 2007/0134419 A12007/0134419 A1 * 6/2007 Mitrovic........... C23C 16/45574examiner
US 2009/0178615 A12009/0178615 A1 7/2009 Kim et al.
US 2011/0143463 A12011/0143463 A1 6/2011 Harada et al.
US 2014/0014745 A12014/0014745 A1 * 1/2014 Burrows................. C30B 25/14

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