Patent
US 9,537,089METHOD AND DEVICE FOR HUGE MAGNETORESISTANCE IN GRAPHENE-BASED MAGNETIC TUNNEL JUNCTIONS WITH SEGMENTED POTENTIALS
Wen-Jeng Hsueh
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,537,089Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A magnetic tunnel junction, comprising: a pinned layer; a free layer; and a periodic graphene nanoribbon layer having a plurality of segmented units, and disposed between the pinned layer and the free layer, wherein each of the plurality of segmented units includes at least one first segment and at least one second segment having a potential difference therebetween.
The magnetic tunnel junction as claimed in Claim 1, wherein the periodic graphene nanoribbon layer is laterally connected to the pinned layer and the free layer.
The magnetic tunnel junction as claimed in Claim 1, wherein the at least one first segment has a relatively higher potential, and the at least one second segment has a relatively lower potential.
The magnetic tunnel junction as claimed in Claim 1, wherein the pinned layer has a first magnetization direction extending vertically and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction.
The magnetic tunnel junction as claimed in Claim 1, wherein the pinned layer has a first magnetization direction extending laterally, and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction,
6. A magnetic tunnel junction, comprising: a pinned layer; a free layer; and a first graphene layer having a plurality of segmented potentials and disposed between the pinned layer and the free layer.
The magnetic tunnel junction as claimed in Claim 6, wherein the pinned layer is a second graphene layer including thereon a first ferromagnetic material, the free layer is a third graphene layer including thereon a second ferromagnetic material, and the second graphene layer and the third graphene layer are integrally formed with the first graphene layer.
The magnetic tunnel junction as claimed in Claim 6, wherein the pinned layer has a first magnetization direction extending vertically and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction.
The magnetic tunnel junction as claimed in Claim 6, wherein the pinned layer has a first magnetization direction extending laterally, and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction.
A method for forming a magnetic tunnel junction, comprising steps of: providing a pinned layer; providing a free layer; and providing a graphene having a plurality of segmented potentials between the pinned layer and the free layer.
The method for forming a magnetic tunnel junction as claimed in Claim 15, wherein the graphene is laterally connected to the pinned layer and the free layer.
Layer stacks claimed or described, ordered top of device to substrate.
magnetic tunnel junction with periodic graphene nanoribbon layer
magnetic tunnel junction with first graphene layer having segmented potentials
Materials described outside the worked examples.
graphene nanoribbon with segmented potentials
ferromagnetic pinned/free layer
ferromagnetic material on graphene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
TMR ratio of graphene-based MTJ with segmented potentials (claimed maximum) | 10000000 % | graphene nanoribbon with segmented potentials |
Patent
Atlas literature
Patent
US 9,537,089Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A magnetic tunnel junction, comprising: a pinned layer; a free layer; and a periodic graphene nanoribbon layer having a plurality of segmented units, and disposed between the pinned layer and the free layer, wherein each of the plurality of segmented units includes at least one first segment and at least one second segment having a potential difference therebetween.
The magnetic tunnel junction as claimed in Claim 1, wherein the periodic graphene nanoribbon layer is laterally connected to the pinned layer and the free layer.
The magnetic tunnel junction as claimed in Claim 1, wherein the at least one first segment has a relatively higher potential, and the at least one second segment has a relatively lower potential.
The magnetic tunnel junction as claimed in Claim 1, wherein the pinned layer has a first magnetization direction extending vertically and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction.
The magnetic tunnel junction as claimed in Claim 1, wherein the pinned layer has a first magnetization direction extending laterally, and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction,
6. A magnetic tunnel junction, comprising: a pinned layer; a free layer; and a first graphene layer having a plurality of segmented potentials and disposed between the pinned layer and the free layer.
The magnetic tunnel junction as claimed in Claim 6, wherein the pinned layer is a second graphene layer including thereon a first ferromagnetic material, the free layer is a third graphene layer including thereon a second ferromagnetic material, and the second graphene layer and the third graphene layer are integrally formed with the first graphene layer.
The magnetic tunnel junction as claimed in Claim 6, wherein the pinned layer has a first magnetization direction extending vertically and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction.
The magnetic tunnel junction as claimed in Claim 6, wherein the pinned layer has a first magnetization direction extending laterally, and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction.
A method for forming a magnetic tunnel junction, comprising steps of: providing a pinned layer; providing a free layer; and providing a graphene having a plurality of segmented potentials between the pinned layer and the free layer.
The method for forming a magnetic tunnel junction as claimed in Claim 15, wherein the graphene is laterally connected to the pinned layer and the free layer.
Layer stacks claimed or described, ordered top of device to substrate.
magnetic tunnel junction with periodic graphene nanoribbon layer
magnetic tunnel junction with first graphene layer having segmented potentials
Materials described outside the worked examples.
graphene nanoribbon with segmented potentials
ferromagnetic pinned/free layer
ferromagnetic material on graphene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
TMR ratio of graphene-based MTJ with segmented potentials (claimed maximum) | 10000000 % | graphene nanoribbon with segmented potentials |
Patent
Atlas literature
Patent
US 9,537,089Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A magnetic tunnel junction, comprising: a pinned layer; a free layer; and a periodic graphene nanoribbon layer having a plurality of segmented units, and disposed between the pinned layer and the free layer, wherein each of the plurality of segmented units includes at least one first segment and at least one second segment having a potential difference therebetween.
The magnetic tunnel junction as claimed in Claim 1, wherein the periodic graphene nanoribbon layer is laterally connected to the pinned layer and the free layer.
The magnetic tunnel junction as claimed in Claim 1, wherein the at least one first segment has a relatively higher potential, and the at least one second segment has a relatively lower potential.
The magnetic tunnel junction as claimed in Claim 1, wherein the pinned layer has a first magnetization direction extending vertically and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction.
The magnetic tunnel junction as claimed in Claim 1, wherein the pinned layer has a first magnetization direction extending laterally, and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction,
6. A magnetic tunnel junction, comprising: a pinned layer; a free layer; and a first graphene layer having a plurality of segmented potentials and disposed between the pinned layer and the free layer.
The magnetic tunnel junction as claimed in Claim 6, wherein the pinned layer is a second graphene layer including thereon a first ferromagnetic material, the free layer is a third graphene layer including thereon a second ferromagnetic material, and the second graphene layer and the third graphene layer are integrally formed with the first graphene layer.
The magnetic tunnel junction as claimed in Claim 6, wherein the pinned layer has a first magnetization direction extending vertically and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction.
The magnetic tunnel junction as claimed in Claim 6, wherein the pinned layer has a first magnetization direction extending laterally, and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction.
A method for forming a magnetic tunnel junction, comprising steps of: providing a pinned layer; providing a free layer; and providing a graphene having a plurality of segmented potentials between the pinned layer and the free layer.
The method for forming a magnetic tunnel junction as claimed in Claim 15, wherein the graphene is laterally connected to the pinned layer and the free layer.
Layer stacks claimed or described, ordered top of device to substrate.
magnetic tunnel junction with periodic graphene nanoribbon layer
magnetic tunnel junction with first graphene layer having segmented potentials
Materials described outside the worked examples.
graphene nanoribbon with segmented potentials
ferromagnetic pinned/free layer
ferromagnetic material on graphene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
TMR ratio of graphene-based MTJ with segmented potentials (claimed maximum) | 10000000 % | graphene nanoribbon with segmented potentials |
Patent
Atlas literature
Patent
US 9,537,089Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A magnetic tunnel junction, comprising: a pinned layer; a free layer; and a periodic graphene nanoribbon layer having a plurality of segmented units, and disposed between the pinned layer and the free layer, wherein each of the plurality of segmented units includes at least one first segment and at least one second segment having a potential difference therebetween.
The magnetic tunnel junction as claimed in Claim 1, wherein the periodic graphene nanoribbon layer is laterally connected to the pinned layer and the free layer.
The magnetic tunnel junction as claimed in Claim 1, wherein the at least one first segment has a relatively higher potential, and the at least one second segment has a relatively lower potential.
The magnetic tunnel junction as claimed in Claim 1, wherein the pinned layer has a first magnetization direction extending vertically and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction.
The magnetic tunnel junction as claimed in Claim 1, wherein the pinned layer has a first magnetization direction extending laterally, and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction,
6. A magnetic tunnel junction, comprising: a pinned layer; a free layer; and a first graphene layer having a plurality of segmented potentials and disposed between the pinned layer and the free layer.
The magnetic tunnel junction as claimed in Claim 6, wherein the pinned layer is a second graphene layer including thereon a first ferromagnetic material, the free layer is a third graphene layer including thereon a second ferromagnetic material, and the second graphene layer and the third graphene layer are integrally formed with the first graphene layer.
The magnetic tunnel junction as claimed in Claim 6, wherein the pinned layer has a first magnetization direction extending vertically and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction.
The magnetic tunnel junction as claimed in Claim 6, wherein the pinned layer has a first magnetization direction extending laterally, and the free layer has a second magnetization direction being one of the same as and opposite to the first magnetization direction.
A method for forming a magnetic tunnel junction, comprising steps of: providing a pinned layer; providing a free layer; and providing a graphene having a plurality of segmented potentials between the pinned layer and the free layer.
The method for forming a magnetic tunnel junction as claimed in Claim 15, wherein the graphene is laterally connected to the pinned layer and the free layer.
Layer stacks claimed or described, ordered top of device to substrate.
magnetic tunnel junction with periodic graphene nanoribbon layer
magnetic tunnel junction with first graphene layer having segmented potentials
Materials described outside the worked examples.
graphene nanoribbon with segmented potentials
ferromagnetic pinned/free layer
ferromagnetic material on graphene
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
TMR ratio of graphene-based MTJ with segmented potentials (claimed maximum) | 10000000 % | graphene nanoribbon with segmented potentials |
buffer layer
armchair graphene nanoribbon
buffer layer
armchair graphene nanoribbon
buffer layer
armchair graphene nanoribbon
buffer layer
armchair graphene nanoribbon