Listinq Of Claims 1. A method for forming a graphene layer on a substrate, comprising the steps of: forming a carbon source layer which is convertible into a graphene layer on the substrate; forming a metal catalyst layer on the carbon source layer; heating, by a first heating source, the substrate on which the carbon source layer and the metal catalyst layer are formed up to a first temperature range, so that the substrate, the carbon source layer and the metal catalyst layer are uniformly heated and a processing time for forming the graphene layer is reduced, the first heating source being disposed under or over the substrate; heating, by a second heating source, a first part of the substrate on which the carbon source layer and the metal catalyst layer are formed, at a second temperature range to convert converting the carbon source layers layer in the first part into the SVG 14141544.06-25-2015.IBDTAC₇WPXXIFW1.CLM.1.svg 0.16 6.5 Black and white wherein the carbon source layers and the metal catalyst layers are formed; moving the second heating source to a second part of the substrate on which the carbon source layer and the metal catalyst layer are formed, and heating the second part to convert converting the carbon source layers layer in the second part into the SVG 14141544.06-25-2015.IBDTAC₇WPXXIFW1.CLM.2.svg 0.16 6.5 Black and white which is different from the first part, AMENDMENT -3- 13/141,544 Attorney. Docket No.: TCI-1 10 removing the metal catalyst layer, wherein the second temperature range is higher than the first temperature range, and the second heating source heats the substrate and the layers after a temperature in a heating treatment chamber reaches the first temperature range, and wherein the carbon source layer is formed by a self-assembly method and by at least one compound selected from the group consisting of an alkylene which has 3 to 50 carbons and an arylene which has 6 to 50 carbons.
5
Dependent← claim 1SiSiO₂
The method according to claim 1, wherein the substrate is a silicon substrate. or a silicon dioxide substrate wherein a silicon dioxide layer which is formed on the silicon substrate.
6
Dependent← claim 1metal catalyst layer
The method according to claim 1, wherein the metal catalyst layer is formed by at least one of a metal or a metal alloy selected from the group consisting of nickel, cobalt, iron, platinum, gold, aluminum, chromium, palladium, copper, AMENDMENT -4- 13/141,544 Attorney. Docket No.: TCI-1 10 magnesium, manganese, molybdenum, rhodium, thallium, titanium, tungsten, uranium, vanadium and zirconium.
7
Dependent← claim 1metal catalyst layer
The method according to claim 1, wherein the metal catalyst layer is formed by one method selected from sputtering deposition, atomic layer deposition, chemical vapor deposition and evaporation deposition.
8
Dependent← claim 1
The method according to claim 1, wherein the step of converting the carbon source layer on the substrate into graphene includes the step of moving the local second heating source heats the first and second parts while moving over the first and second parts, respectively, in a constant speed.
10
Dependent← claim 1
The method according to claim 1, wherein the local second heating source is a metal heating wire.
11
Dependent← claim 1
The method according to claim 1, wherein the local second heating source is a lamp apparatus which irradiates linear beam or a laser apparatus which irradiates linear laser.
12
Dependent← claim 1
The method according to claim 1, wherein the local heating source heats the substrate in the first temperature range is about 800 C, and the second temperature range of 500 to 1700 C is between 800 to 1700 C.
14
Dependent← claim 1
The method according to claim 1, wherein said removing the metal catalyst layer is done by dipping the substrate in acid or alkali solution.
The method according to claim 2 claim 1, wherein the carbon sources layer which is convertible into the graphene is formed by dipping the substrate in [[the]] a liquid solution which includes at least one compound selected from the group consisting of an alkylene which has 3 to 50 carbons and an arylene which has 6 to 50 carbons.
3
Independent
canceled
13
Independent
canceled
15
Independent
15-16. AMENDMENT -6- 13/141,544 canceled
16
Independent
canceled
Materials
Materials described outside the worked examples.
graphene
Product Layer
alkylene carbon source
Carbon Source Precursor
arylene carbon source
Process steps
Additional fabrication and treatment steps described in the patent.
1
Graphene Growth From SAM
Step 1
Temperature
500, 1700°C
Process details
catalyst removal:
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
Raman spectroscopy
Raman Spectroscopy
graphene
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Thickness
30–30000 nm
—
Thickness
Patent
Atlas literature
Patent
US 9,233,851
METHOD FOR MANUFACTURING HIGH QUALITY GRAPHENE BY HEATING CARBON-BASED SELF-ASSEMBLY MONOLAYERS
SeokWoo JEON
US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listinq Of Claims 1. A method for forming a graphene layer on a substrate, comprising the steps of: forming a carbon source layer which is convertible into a graphene layer on the substrate; forming a metal catalyst layer on the carbon source layer; heating, by a first heating source, the substrate on which the carbon source layer and the metal catalyst layer are formed up to a first temperature range, so that the substrate, the carbon source layer and the metal catalyst layer are uniformly heated and a processing time for forming the graphene layer is reduced, the first heating source being disposed under or over the substrate; heating, by a second heating source, a first part of the substrate on which the carbon source layer and the metal catalyst layer are formed, at a second temperature range to convert converting the carbon source layers layer in the first part into the SVG 14141544.06-25-2015.IBDTAC₇WPXXIFW1.CLM.1.svg 0.16 6.5 Black and white wherein the carbon source layers and the metal catalyst layers are formed; moving the second heating source to a second part of the substrate on which the carbon source layer and the metal catalyst layer are formed, and heating the second part to convert converting the carbon source layers layer in the second part into the SVG 14141544.06-25-2015.IBDTAC₇WPXXIFW1.CLM.2.svg 0.16 6.5 Black and white which is different from the first part, AMENDMENT -3- 13/141,544 Attorney. Docket No.: TCI-1 10 removing the metal catalyst layer, wherein the second temperature range is higher than the first temperature range, and the second heating source heats the substrate and the layers after a temperature in a heating treatment chamber reaches the first temperature range, and wherein the carbon source layer is formed by a self-assembly method and by at least one compound selected from the group consisting of an alkylene which has 3 to 50 carbons and an arylene which has 6 to 50 carbons.
5
Dependent← claim 1SiSiO₂
The method according to claim 1, wherein the substrate is a silicon substrate. or a silicon dioxide substrate wherein a silicon dioxide layer which is formed on the silicon substrate.
6
Dependent← claim 1metal catalyst layer
The method according to claim 1, wherein the metal catalyst layer is formed by at least one of a metal or a metal alloy selected from the group consisting of nickel, cobalt, iron, platinum, gold, aluminum, chromium, palladium, copper, AMENDMENT -4- 13/141,544 Attorney. Docket No.: TCI-1 10 magnesium, manganese, molybdenum, rhodium, thallium, titanium, tungsten, uranium, vanadium and zirconium.
7
Dependent← claim 1metal catalyst layer
The method according to claim 1, wherein the metal catalyst layer is formed by one method selected from sputtering deposition, atomic layer deposition, chemical vapor deposition and evaporation deposition.
8
Dependent← claim 1
The method according to claim 1, wherein the step of converting the carbon source layer on the substrate into graphene includes the step of moving the local second heating source heats the first and second parts while moving over the first and second parts, respectively, in a constant speed.
10
Dependent← claim 1
The method according to claim 1, wherein the local second heating source is a metal heating wire.
11
Dependent← claim 1
The method according to claim 1, wherein the local second heating source is a lamp apparatus which irradiates linear beam or a laser apparatus which irradiates linear laser.
12
Dependent← claim 1
The method according to claim 1, wherein the local heating source heats the substrate in the first temperature range is about 800 C, and the second temperature range of 500 to 1700 C is between 800 to 1700 C.
14
Dependent← claim 1
The method according to claim 1, wherein said removing the metal catalyst layer is done by dipping the substrate in acid or alkali solution.
The method according to claim 2 claim 1, wherein the carbon sources layer which is convertible into the graphene is formed by dipping the substrate in [[the]] a liquid solution which includes at least one compound selected from the group consisting of an alkylene which has 3 to 50 carbons and an arylene which has 6 to 50 carbons.
3
Independent
canceled
13
Independent
canceled
15
Independent
15-16. AMENDMENT -6- 13/141,544 canceled
16
Independent
canceled
Materials
Materials described outside the worked examples.
graphene
Product Layer
alkylene carbon source
Carbon Source Precursor
arylene carbon source
Process steps
Additional fabrication and treatment steps described in the patent.
1
Graphene Growth From SAM
Step 1
Temperature
500, 1700°C
Process details
catalyst removal:
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
Raman spectroscopy
Raman Spectroscopy
graphene
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Thickness
30–30000 nm
—
Thickness
Patent
Atlas literature
Patent
US 9,233,851
METHOD FOR MANUFACTURING HIGH QUALITY GRAPHENE BY HEATING CARBON-BASED SELF-ASSEMBLY MONOLAYERS
SeokWoo JEON
US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listinq Of Claims 1. A method for forming a graphene layer on a substrate, comprising the steps of: forming a carbon source layer which is convertible into a graphene layer on the substrate; forming a metal catalyst layer on the carbon source layer; heating, by a first heating source, the substrate on which the carbon source layer and the metal catalyst layer are formed up to a first temperature range, so that the substrate, the carbon source layer and the metal catalyst layer are uniformly heated and a processing time for forming the graphene layer is reduced, the first heating source being disposed under or over the substrate; heating, by a second heating source, a first part of the substrate on which the carbon source layer and the metal catalyst layer are formed, at a second temperature range to convert converting the carbon source layers layer in the first part into the SVG 14141544.06-25-2015.IBDTAC₇WPXXIFW1.CLM.1.svg 0.16 6.5 Black and white wherein the carbon source layers and the metal catalyst layers are formed; moving the second heating source to a second part of the substrate on which the carbon source layer and the metal catalyst layer are formed, and heating the second part to convert converting the carbon source layers layer in the second part into the SVG 14141544.06-25-2015.IBDTAC₇WPXXIFW1.CLM.2.svg 0.16 6.5 Black and white which is different from the first part, AMENDMENT -3- 13/141,544 Attorney. Docket No.: TCI-1 10 removing the metal catalyst layer, wherein the second temperature range is higher than the first temperature range, and the second heating source heats the substrate and the layers after a temperature in a heating treatment chamber reaches the first temperature range, and wherein the carbon source layer is formed by a self-assembly method and by at least one compound selected from the group consisting of an alkylene which has 3 to 50 carbons and an arylene which has 6 to 50 carbons.
5
Dependent← claim 1SiSiO₂
The method according to claim 1, wherein the substrate is a silicon substrate. or a silicon dioxide substrate wherein a silicon dioxide layer which is formed on the silicon substrate.
6
Dependent← claim 1metal catalyst layer
The method according to claim 1, wherein the metal catalyst layer is formed by at least one of a metal or a metal alloy selected from the group consisting of nickel, cobalt, iron, platinum, gold, aluminum, chromium, palladium, copper, AMENDMENT -4- 13/141,544 Attorney. Docket No.: TCI-1 10 magnesium, manganese, molybdenum, rhodium, thallium, titanium, tungsten, uranium, vanadium and zirconium.
7
Dependent← claim 1metal catalyst layer
The method according to claim 1, wherein the metal catalyst layer is formed by one method selected from sputtering deposition, atomic layer deposition, chemical vapor deposition and evaporation deposition.
8
Dependent← claim 1
The method according to claim 1, wherein the step of converting the carbon source layer on the substrate into graphene includes the step of moving the local second heating source heats the first and second parts while moving over the first and second parts, respectively, in a constant speed.
10
Dependent← claim 1
The method according to claim 1, wherein the local second heating source is a metal heating wire.
11
Dependent← claim 1
The method according to claim 1, wherein the local second heating source is a lamp apparatus which irradiates linear beam or a laser apparatus which irradiates linear laser.
12
Dependent← claim 1
The method according to claim 1, wherein the local heating source heats the substrate in the first temperature range is about 800 C, and the second temperature range of 500 to 1700 C is between 800 to 1700 C.
14
Dependent← claim 1
The method according to claim 1, wherein said removing the metal catalyst layer is done by dipping the substrate in acid or alkali solution.
The method according to claim 2 claim 1, wherein the carbon sources layer which is convertible into the graphene is formed by dipping the substrate in [[the]] a liquid solution which includes at least one compound selected from the group consisting of an alkylene which has 3 to 50 carbons and an arylene which has 6 to 50 carbons.
3
Independent
canceled
13
Independent
canceled
15
Independent
15-16. AMENDMENT -6- 13/141,544 canceled
16
Independent
canceled
Materials
Materials described outside the worked examples.
graphene
Product Layer
alkylene carbon source
Carbon Source Precursor
arylene carbon source
Process steps
Additional fabrication and treatment steps described in the patent.
1
Graphene Growth From SAM
Step 1
Temperature
500, 1700°C
Process details
catalyst removal:
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
Raman spectroscopy
Raman Spectroscopy
graphene
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Thickness
30–30000 nm
—
Thickness
Patent
Atlas literature
Patent
US 9,233,851
METHOD FOR MANUFACTURING HIGH QUALITY GRAPHENE BY HEATING CARBON-BASED SELF-ASSEMBLY MONOLAYERS
SeokWoo JEON
US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listinq Of Claims 1. A method for forming a graphene layer on a substrate, comprising the steps of: forming a carbon source layer which is convertible into a graphene layer on the substrate; forming a metal catalyst layer on the carbon source layer; heating, by a first heating source, the substrate on which the carbon source layer and the metal catalyst layer are formed up to a first temperature range, so that the substrate, the carbon source layer and the metal catalyst layer are uniformly heated and a processing time for forming the graphene layer is reduced, the first heating source being disposed under or over the substrate; heating, by a second heating source, a first part of the substrate on which the carbon source layer and the metal catalyst layer are formed, at a second temperature range to convert converting the carbon source layers layer in the first part into the SVG 14141544.06-25-2015.IBDTAC₇WPXXIFW1.CLM.1.svg 0.16 6.5 Black and white wherein the carbon source layers and the metal catalyst layers are formed; moving the second heating source to a second part of the substrate on which the carbon source layer and the metal catalyst layer are formed, and heating the second part to convert converting the carbon source layers layer in the second part into the SVG 14141544.06-25-2015.IBDTAC₇WPXXIFW1.CLM.2.svg 0.16 6.5 Black and white which is different from the first part, AMENDMENT -3- 13/141,544 Attorney. Docket No.: TCI-1 10 removing the metal catalyst layer, wherein the second temperature range is higher than the first temperature range, and the second heating source heats the substrate and the layers after a temperature in a heating treatment chamber reaches the first temperature range, and wherein the carbon source layer is formed by a self-assembly method and by at least one compound selected from the group consisting of an alkylene which has 3 to 50 carbons and an arylene which has 6 to 50 carbons.
5
Dependent← claim 1SiSiO₂
The method according to claim 1, wherein the substrate is a silicon substrate. or a silicon dioxide substrate wherein a silicon dioxide layer which is formed on the silicon substrate.
6
Dependent← claim 1metal catalyst layer
The method according to claim 1, wherein the metal catalyst layer is formed by at least one of a metal or a metal alloy selected from the group consisting of nickel, cobalt, iron, platinum, gold, aluminum, chromium, palladium, copper, AMENDMENT -4- 13/141,544 Attorney. Docket No.: TCI-1 10 magnesium, manganese, molybdenum, rhodium, thallium, titanium, tungsten, uranium, vanadium and zirconium.
7
Dependent← claim 1metal catalyst layer
The method according to claim 1, wherein the metal catalyst layer is formed by one method selected from sputtering deposition, atomic layer deposition, chemical vapor deposition and evaporation deposition.
8
Dependent← claim 1
The method according to claim 1, wherein the step of converting the carbon source layer on the substrate into graphene includes the step of moving the local second heating source heats the first and second parts while moving over the first and second parts, respectively, in a constant speed.
10
Dependent← claim 1
The method according to claim 1, wherein the local second heating source is a metal heating wire.
11
Dependent← claim 1
The method according to claim 1, wherein the local second heating source is a lamp apparatus which irradiates linear beam or a laser apparatus which irradiates linear laser.
12
Dependent← claim 1
The method according to claim 1, wherein the local heating source heats the substrate in the first temperature range is about 800 C, and the second temperature range of 500 to 1700 C is between 800 to 1700 C.
14
Dependent← claim 1
The method according to claim 1, wherein said removing the metal catalyst layer is done by dipping the substrate in acid or alkali solution.
The method according to claim 2 claim 1, wherein the carbon sources layer which is convertible into the graphene is formed by dipping the substrate in [[the]] a liquid solution which includes at least one compound selected from the group consisting of an alkylene which has 3 to 50 carbons and an arylene which has 6 to 50 carbons.
3
Independent
canceled
13
Independent
canceled
15
Independent
15-16. AMENDMENT -6- 13/141,544 canceled
16
Independent
canceled
Materials
Materials described outside the worked examples.
graphene
Product Layer
alkylene carbon source
Carbon Source Precursor
arylene carbon source
Process steps
Additional fabrication and treatment steps described in the patent.
1
Graphene Growth From SAM
Step 1
Temperature
500, 1700°C
Process details
catalyst removal:
Characterization
Measurements and analyses referenced in the patent, with their drawing references.
Raman spectroscopy
Raman Spectroscopy
graphene
Reported properties
Performance values and ranges asserted in the specification or claims.
first heating source:uniform heating of whole substrate to first temperature range (~800 C)
second heating source:local heating source (metal heating wire, lamp with linear beam, or laser with linear laser) moved across substrate at constant speed
carbon source formation:self-assembly method by dipping substrate in liquid solution containing alkylene (3-50 carbons) or arylene (6-50 carbons)
first temperature range c:~800
metal catalyst deposition:sputtering deposition, atomic layer deposition, chemical vapor deposition, or evaporation deposition
first heating source:uniform heating of whole substrate to first temperature range (~800 C)
second heating source:local heating source (metal heating wire, lamp with linear beam, or laser with linear laser) moved across substrate at constant speed
carbon source formation:self-assembly method by dipping substrate in liquid solution containing alkylene (3-50 carbons) or arylene (6-50 carbons)
first temperature range c:~800
metal catalyst deposition:sputtering deposition, atomic layer deposition, chemical vapor deposition, or evaporation deposition
first heating source:uniform heating of whole substrate to first temperature range (~800 C)
second heating source:local heating source (metal heating wire, lamp with linear beam, or laser with linear laser) moved across substrate at constant speed
carbon source formation:self-assembly method by dipping substrate in liquid solution containing alkylene (3-50 carbons) or arylene (6-50 carbons)
first temperature range c:~800
metal catalyst deposition:sputtering deposition, atomic layer deposition, chemical vapor deposition, or evaporation deposition
first heating source:uniform heating of whole substrate to first temperature range (~800 C)
second heating source:local heating source (metal heating wire, lamp with linear beam, or laser with linear laser) moved across substrate at constant speed
carbon source formation:self-assembly method by dipping substrate in liquid solution containing alkylene (3-50 carbons) or arylene (6-50 carbons)
first temperature range c:~800
metal catalyst deposition:sputtering deposition, atomic layer deposition, chemical vapor deposition, or evaporation deposition
