Patent
Atlas literature
Patent
US 11,781,240 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view showing a structure of an indium phosphide crystal system prepared from an indium- phosphorus mixture in an embodiment;
FIG. 2 is a reaction mechanism diagram of an indium- phosphorus mixture fed into an In-P melt;
FIG. 3 is a schematic view showing the structure of the charging chamber during feed supplement in the embodi- ment;
FIG. 4 is a schematic view showing the structure of the roll-over feeder in the embodiment;
FIG. 5 is a schematic view showing a connection structure of a motor and a loader in the embodiment; In the drawings, 1 represents a synthesis growth chamber, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, characterized by com-prising following steps of: 1) preparing an indium-phosphorus mixed ball: uniformly mixing indium powder and red phosphorus powder according to a designed mass ratio, and pressing into a spherical shape; 2) charging: putting the indium-phosphorus mixed ball mixed boron oxide powder into a feeder in a furnace body, and putting a boron oxide block into a crucible; 3) keeping high furnace pressure and low temperature of the indium-phosphorus mixed ball: keeping the low temperature of the indium-phosphorus mixed ball in the process of feeding the indium-phosphorus mixed ball from the feeder to the crucible, preventing indium or phosphorus from melting and gasifying, and keeping the pressure in the furnace greater than the dissociation pressure of indium phos-phide; 4) melting covering agent: heating the crucible, melting the boron oxide block, and covering the bottom of the crucible with a boron oxide liquid; B₂ 5) feeding, synthesizing and crystal growing: feeding the mixture of the indium-phosphorus mixed ball and the boron oxide powder into a crucible below the liquid level of the boron oxide, simultaneously controlling the temperature of the crucible to enable the indium-phosphorus to react to synthesize indium phosphide, adjusting the temperature after the melt amount of the indium phosphide reaching a set amount, and carrying out crystal growth by adopting a high-pressure liquid encapsulation pulling method.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that in the step 3), the step of maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball comprises the following steps of: vacuumizing the furnace body to 10-10⁻⁵ Pa, filling low-temperature inert gas, keeping the low-temperature inert gas to flow along the feeding path and then sending to the upper part of the crucible from top to bottom, keeping the pressure in the furnace to be 3.5-5.0 MPa, and ensuring that the pressure in the feeding space is 0.05-0.1 MPa higher than the pressure in the synthesis growth space.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: in the step 1), the mass ratio of indium powder to phosphorus powder is 3.7:1.0-1.5.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: the temperature of the crucible in step 5) is 1080-1200° C.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: in the step 5), the set amount of the indium phosphide melt is 10%-80% of that the liquid level height of the indium phosphide melt accounts for the height in the crucible.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: the reaction process synthesized in the step 5) comprises reaction of gaseous phosphorus with an indium-phosphorus melt and fusion of liquid indium with the indium-phosphorus melt.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, characterized in that: the step 5) further comprises a feed supplement step, wherein in the feed supplement step, the operation space of putting the indium-phosphorus mixed ball mixed boron oxide powder into the feeder and the synthesis and crystal growth space are mutually isolated. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
indium powder
In
red phosphorus powder
P
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 3.5–5 MPa | — |
Pressure | 0.05–0.1 MPa |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Patent
Atlas literature
Patent
US 11,781,240 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view showing a structure of an indium phosphide crystal system prepared from an indium- phosphorus mixture in an embodiment;
FIG. 2 is a reaction mechanism diagram of an indium- phosphorus mixture fed into an In-P melt;
FIG. 3 is a schematic view showing the structure of the charging chamber during feed supplement in the embodi- ment;
FIG. 4 is a schematic view showing the structure of the roll-over feeder in the embodiment;
FIG. 5 is a schematic view showing a connection structure of a motor and a loader in the embodiment; In the drawings, 1 represents a synthesis growth chamber, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, characterized by com-prising following steps of: 1) preparing an indium-phosphorus mixed ball: uniformly mixing indium powder and red phosphorus powder according to a designed mass ratio, and pressing into a spherical shape; 2) charging: putting the indium-phosphorus mixed ball mixed boron oxide powder into a feeder in a furnace body, and putting a boron oxide block into a crucible; 3) keeping high furnace pressure and low temperature of the indium-phosphorus mixed ball: keeping the low temperature of the indium-phosphorus mixed ball in the process of feeding the indium-phosphorus mixed ball from the feeder to the crucible, preventing indium or phosphorus from melting and gasifying, and keeping the pressure in the furnace greater than the dissociation pressure of indium phos-phide; 4) melting covering agent: heating the crucible, melting the boron oxide block, and covering the bottom of the crucible with a boron oxide liquid; B₂ 5) feeding, synthesizing and crystal growing: feeding the mixture of the indium-phosphorus mixed ball and the boron oxide powder into a crucible below the liquid level of the boron oxide, simultaneously controlling the temperature of the crucible to enable the indium-phosphorus to react to synthesize indium phosphide, adjusting the temperature after the melt amount of the indium phosphide reaching a set amount, and carrying out crystal growth by adopting a high-pressure liquid encapsulation pulling method.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that in the step 3), the step of maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball comprises the following steps of: vacuumizing the furnace body to 10-10⁻⁵ Pa, filling low-temperature inert gas, keeping the low-temperature inert gas to flow along the feeding path and then sending to the upper part of the crucible from top to bottom, keeping the pressure in the furnace to be 3.5-5.0 MPa, and ensuring that the pressure in the feeding space is 0.05-0.1 MPa higher than the pressure in the synthesis growth space.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: in the step 1), the mass ratio of indium powder to phosphorus powder is 3.7:1.0-1.5.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: the temperature of the crucible in step 5) is 1080-1200° C.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: in the step 5), the set amount of the indium phosphide melt is 10%-80% of that the liquid level height of the indium phosphide melt accounts for the height in the crucible.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: the reaction process synthesized in the step 5) comprises reaction of gaseous phosphorus with an indium-phosphorus melt and fusion of liquid indium with the indium-phosphorus melt.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, characterized in that: the step 5) further comprises a feed supplement step, wherein in the feed supplement step, the operation space of putting the indium-phosphorus mixed ball mixed boron oxide powder into the feeder and the synthesis and crystal growth space are mutually isolated. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
indium powder
In
red phosphorus powder
P
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 3.5–5 MPa | — |
Pressure | 0.05–0.1 MPa |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Patent
Atlas literature
Patent
US 11,781,240 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view showing a structure of an indium phosphide crystal system prepared from an indium- phosphorus mixture in an embodiment;
FIG. 2 is a reaction mechanism diagram of an indium- phosphorus mixture fed into an In-P melt;
FIG. 3 is a schematic view showing the structure of the charging chamber during feed supplement in the embodi- ment;
FIG. 4 is a schematic view showing the structure of the roll-over feeder in the embodiment;
FIG. 5 is a schematic view showing a connection structure of a motor and a loader in the embodiment; In the drawings, 1 represents a synthesis growth chamber, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, characterized by com-prising following steps of: 1) preparing an indium-phosphorus mixed ball: uniformly mixing indium powder and red phosphorus powder according to a designed mass ratio, and pressing into a spherical shape; 2) charging: putting the indium-phosphorus mixed ball mixed boron oxide powder into a feeder in a furnace body, and putting a boron oxide block into a crucible; 3) keeping high furnace pressure and low temperature of the indium-phosphorus mixed ball: keeping the low temperature of the indium-phosphorus mixed ball in the process of feeding the indium-phosphorus mixed ball from the feeder to the crucible, preventing indium or phosphorus from melting and gasifying, and keeping the pressure in the furnace greater than the dissociation pressure of indium phos-phide; 4) melting covering agent: heating the crucible, melting the boron oxide block, and covering the bottom of the crucible with a boron oxide liquid; B₂ 5) feeding, synthesizing and crystal growing: feeding the mixture of the indium-phosphorus mixed ball and the boron oxide powder into a crucible below the liquid level of the boron oxide, simultaneously controlling the temperature of the crucible to enable the indium-phosphorus to react to synthesize indium phosphide, adjusting the temperature after the melt amount of the indium phosphide reaching a set amount, and carrying out crystal growth by adopting a high-pressure liquid encapsulation pulling method.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that in the step 3), the step of maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball comprises the following steps of: vacuumizing the furnace body to 10-10⁻⁵ Pa, filling low-temperature inert gas, keeping the low-temperature inert gas to flow along the feeding path and then sending to the upper part of the crucible from top to bottom, keeping the pressure in the furnace to be 3.5-5.0 MPa, and ensuring that the pressure in the feeding space is 0.05-0.1 MPa higher than the pressure in the synthesis growth space.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: in the step 1), the mass ratio of indium powder to phosphorus powder is 3.7:1.0-1.5.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: the temperature of the crucible in step 5) is 1080-1200° C.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: in the step 5), the set amount of the indium phosphide melt is 10%-80% of that the liquid level height of the indium phosphide melt accounts for the height in the crucible.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: the reaction process synthesized in the step 5) comprises reaction of gaseous phosphorus with an indium-phosphorus melt and fusion of liquid indium with the indium-phosphorus melt.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, characterized in that: the step 5) further comprises a feed supplement step, wherein in the feed supplement step, the operation space of putting the indium-phosphorus mixed ball mixed boron oxide powder into the feeder and the synthesis and crystal growth space are mutually isolated. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
indium powder
In
red phosphorus powder
P
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 3.5–5 MPa | — |
Pressure | 0.05–0.1 MPa |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Patent
Atlas literature
Patent
US 11,781,240 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic view showing a structure of an indium phosphide crystal system prepared from an indium- phosphorus mixture in an embodiment;
FIG. 2 is a reaction mechanism diagram of an indium- phosphorus mixture fed into an In-P melt;
FIG. 3 is a schematic view showing the structure of the charging chamber during feed supplement in the embodi- ment;
FIG. 4 is a schematic view showing the structure of the roll-over feeder in the embodiment;
FIG. 5 is a schematic view showing a connection structure of a motor and a loader in the embodiment; In the drawings, 1 represents a synthesis growth chamber, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, characterized by com-prising following steps of: 1) preparing an indium-phosphorus mixed ball: uniformly mixing indium powder and red phosphorus powder according to a designed mass ratio, and pressing into a spherical shape; 2) charging: putting the indium-phosphorus mixed ball mixed boron oxide powder into a feeder in a furnace body, and putting a boron oxide block into a crucible; 3) keeping high furnace pressure and low temperature of the indium-phosphorus mixed ball: keeping the low temperature of the indium-phosphorus mixed ball in the process of feeding the indium-phosphorus mixed ball from the feeder to the crucible, preventing indium or phosphorus from melting and gasifying, and keeping the pressure in the furnace greater than the dissociation pressure of indium phos-phide; 4) melting covering agent: heating the crucible, melting the boron oxide block, and covering the bottom of the crucible with a boron oxide liquid; B₂ 5) feeding, synthesizing and crystal growing: feeding the mixture of the indium-phosphorus mixed ball and the boron oxide powder into a crucible below the liquid level of the boron oxide, simultaneously controlling the temperature of the crucible to enable the indium-phosphorus to react to synthesize indium phosphide, adjusting the temperature after the melt amount of the indium phosphide reaching a set amount, and carrying out crystal growth by adopting a high-pressure liquid encapsulation pulling method.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that in the step 3), the step of maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball comprises the following steps of: vacuumizing the furnace body to 10-10⁻⁵ Pa, filling low-temperature inert gas, keeping the low-temperature inert gas to flow along the feeding path and then sending to the upper part of the crucible from top to bottom, keeping the pressure in the furnace to be 3.5-5.0 MPa, and ensuring that the pressure in the feeding space is 0.05-0.1 MPa higher than the pressure in the synthesis growth space.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: in the step 1), the mass ratio of indium powder to phosphorus powder is 3.7:1.0-1.5.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: the temperature of the crucible in step 5) is 1080-1200° C.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: in the step 5), the set amount of the indium phosphide melt is 10%-80% of that the liquid level height of the indium phosphide melt accounts for the height in the crucible.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, char-acterized in that: the reaction process synthesized in the step 5) comprises reaction of gaseous phosphorus with an indium-phosphorus melt and fusion of liquid indium with the indium-phosphorus melt.
The method for preparing the indium phosphide crystal by using the indium-phosphorus mixture of claim 1, characterized in that: the step 5) further comprises a feed supplement step, wherein in the feed supplement step, the operation space of putting the indium-phosphorus mixed ball mixed boron oxide powder into the feeder and the synthesis and crystal growth space are mutually isolated. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
indium powder
In
red phosphorus powder
P
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 3.5–5 MPa | — |
Pressure | 0.05–0.1 MPa |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
boron oxide
B₂O₃
indium phosphide crystal
InP
low-temperature inert gas
| — |
Temperature | ≤ 156 °C | — |
Temperature | 1080–1200 °C | — |
Cited non-patent literature · 2
boron oxide
B₂O₃
indium phosphide crystal
InP
low-temperature inert gas
| — |
Temperature | ≤ 156 °C | — |
Temperature | 1080–1200 °C | — |
Cited non-patent literature · 2
boron oxide
B₂O₃
indium phosphide crystal
InP
low-temperature inert gas
| — |
Temperature | ≤ 156 °C | — |
Temperature | 1080–1200 °C | — |
Cited non-patent literature · 2
boron oxide
B₂O₃
indium phosphide crystal
InP
low-temperature inert gas
| — |
Temperature | ≤ 156 °C | — |
Temperature | 1080–1200 °C | — |
Cited non-patent literature · 2
