Patent
US 9,105,696METHOD OF COATING SURFACE OF SUBSTRATE HOLE WITH LAYER OF REDUCED GRAPHENE OXIDE
Wei-Ping Dow
US
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Patent
Atlas literature
Patent
US 9,105,696Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for coating a layer of reduced graphene oxide on the surface of holes in a substrate, comprising:-S tep 1 (su rface b ydrophi lic treat ment) wash ing the substrate with alcohol, inm ersi n g the s u bst r ate in a m ixe d sol u tio n of co n centrate d sulfuric acid a nd concen trated hydroge n peroxide, and re mov ing organic r ernaini s o n the substrate, tto offer the surfa c es of the substrate and h oles carrying-OH groups;-S tep 2 (self- assembly of a silane layer) imn ersing the treated substrate from S tep 1 in a sila ne solution to for m a self ass em bly silane layer on the surface of the substrate and t he holes;-S tep 3 (grafting of a polymer layer) immersing the treated substrate from S tep 2 in a polymer solution to form a pol y mer la y er on the self-assembly si lane layer;-S tep 4 (gr aftin g of a g raph ene o x ide (GO) layer) imm ersing the treated substrate from Step 3 in an al k alin e GO solution to gra ft a GO layer on t he polym e r layer;-S tep 5 (intercalati o n of metal ions) immersing the treated substrate from S tep 4 in a solution of metal ion to interc a lat e the metal ions into t he GO layer, and form a metal ion/G(abrasion; and-S tep 6 (formation of a metal ato m/rGO co mpo site layer) immersing the treated s ub str a te from S tep 5 in a so lu tion of re ductant to reduce the meta l ion into m etal atom, and the GO layer into a reduced graphene oxide (rG O) layer to form a metal ato rn/rGO composite layer on the s u bstrate surface and the h ole surfac e.
The method of claim 1, wherein the i mm ersion time in S tep 1 is 20-40 m in and 12 the te mpe rat ure of the solution is 50-90 °C.
The method of claim 1, wherein the silan e solution i n Step 2 is a 0.5-1.5V% solution of epoxy silane.
The method of claim 3, wherein the silan e solution i n Step 2 is a solution of 3 -(2,3-epoxypropoxy)propyltrimethoxysilane (GPTMS). 5. The method of claim 1, wherein the i mmersion timec in Step 2 is 15-25 nin an d the temp erat u re of t h e solution is 50-70 °C.
6. The method of claim 1, wherein the pol yme r sol u tion in St ep 3 is a 3-10 wt% solu tio n of Polyethyleneimine (P EI).
The method of claim 1, wherein the i mme rsion time in Step 3 is 60-120 m in and th e te mperature of t he sol ution is 40-80 °C.
The method of claim 1, wherein the pI val ue of t he al kaline GO solu ti on in Step 4 is 8.5-10,
9. The method of claim 1, wherein a O.1M solutio n of NaOH- is a dded to the GO solution to for m th e a lk aline GO solution in Step 4. 1 0. The method of claim 1, wherein the imm ersio n time in Step 4i is 6-12 h ours and t he te mp erature of the solution is 1 5 -35 °C. 11. The method of claim 1, wherein the s olution of m eta l ion in Step 5 is a 0.05- 0.15M AgN O 3 so lu tio n. 1 2. The method of claim 1, wherein the i rmersion time in Step 5 is 20-40 m in anid the temp erature of th e solution is 30-70 °C. 13. The method of claim 1, wherein the solution of reductami. in Step 6 is a solution sel ected fro m the group c onsisting of HI solution, so dium boro hydride solution, ascorbic ac id solution, ethan ol solution, a nd hydrazin e solution. 13 1 4. The method of claim 1, wherein the i rnm ers ion ti me in Step 6 is 1.5-2.5 h ours anid the temperature of the solutio n is 30-70 °C.
1 5. The method of claim 1, wherein a sonication procedure is included in the imersion process of Step 1 to the Step 6. 14
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Substrate (Si/SiO2, prewashed with ethanol) immersed in piranha solution (concentrated H₂SO₄ 95-98%: H₂O₂ ~30%, ratio 7:3) for 20-40 min at 50-90°C (preferably 30 min at 70°C), with sonication for 5-6 seconds; then rinsed with DI water and dried under nitrogen gas to provide -OH groups on substrate and hole surfaces.
2 materials1 process step
Treated substrate from Step 1 immersed in 0.5-1.5 V% GPTMS in toluene at 50-70°C for 15-25 min (preferably 70°C for 20 min), with sonication for 5 seconds after immersion, then quickly dried under nitrogen gas.
2 materials1 process step
Treated substrate from Step 2 immersed in 3-10 wt% PEI solution in ethanol at 40-80°C for 60-120 min (preferably 60°C for 90 min), with sonication for 5 seconds, then dried under nitrogen gas.
2 materials1 process step
Treated substrate from Step 3 immersed in alkaline GO solution (NaOH 0.1M added to keep pH 8.5-10, preferably 9.3) at 25°C for 12 hours, with sonication for 5-7 seconds; GO surface is alcoholized in alkaline condition.
1 material1 process step
Treated substrate from Step 4 immersed in 0.05-0.15M (preferably 0.1M) AgNO₃ solution at 30-70°C for 20-40 min (preferably 50°C for 30 min), with sonication for 5 seconds, then rinsed with DI water and dried under nitrogen.
6 materials1 process step
Treated substrate from Step 5 immersed in HI solution at 30-70°C for 1.5-2.5 hours (preferably 50°C for 2 hours), with sonication for 5 seconds, then rinsed with DI water and dried under nitrogen gas. Reductant may alternatively be sodium borohydride, ascorbic acid, ethanol, or hydrazine solution. GO is reduced to rGO and metal ion to metal atom.
Materials described outside the worked examples.
graphene oxide
GO
metal ion solution
reductant solution
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
contact angle before piranha treatment | 69.14 degrees | Si/SiO₂ |
Patent
Atlas literature
Patent
US 9,105,696Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for coating a layer of reduced graphene oxide on the surface of holes in a substrate, comprising:-S tep 1 (su rface b ydrophi lic treat ment) wash ing the substrate with alcohol, inm ersi n g the s u bst r ate in a m ixe d sol u tio n of co n centrate d sulfuric acid a nd concen trated hydroge n peroxide, and re mov ing organic r ernaini s o n the substrate, tto offer the surfa c es of the substrate and h oles carrying-OH groups;-S tep 2 (self- assembly of a silane layer) imn ersing the treated substrate from S tep 1 in a sila ne solution to for m a self ass em bly silane layer on the surface of the substrate and t he holes;-S tep 3 (grafting of a polymer layer) immersing the treated substrate from S tep 2 in a polymer solution to form a pol y mer la y er on the self-assembly si lane layer;-S tep 4 (gr aftin g of a g raph ene o x ide (GO) layer) imm ersing the treated substrate from Step 3 in an al k alin e GO solution to gra ft a GO layer on t he polym e r layer;-S tep 5 (intercalati o n of metal ions) immersing the treated substrate from S tep 4 in a solution of metal ion to interc a lat e the metal ions into t he GO layer, and form a metal ion/G(abrasion; and-S tep 6 (formation of a metal ato m/rGO co mpo site layer) immersing the treated s ub str a te from S tep 5 in a so lu tion of re ductant to reduce the meta l ion into m etal atom, and the GO layer into a reduced graphene oxide (rG O) layer to form a metal ato rn/rGO composite layer on the s u bstrate surface and the h ole surfac e.
The method of claim 1, wherein the i mm ersion time in S tep 1 is 20-40 m in and 12 the te mpe rat ure of the solution is 50-90 °C.
The method of claim 1, wherein the silan e solution i n Step 2 is a 0.5-1.5V% solution of epoxy silane.
The method of claim 3, wherein the silan e solution i n Step 2 is a solution of 3 -(2,3-epoxypropoxy)propyltrimethoxysilane (GPTMS). 5. The method of claim 1, wherein the i mmersion timec in Step 2 is 15-25 nin an d the temp erat u re of t h e solution is 50-70 °C.
6. The method of claim 1, wherein the pol yme r sol u tion in St ep 3 is a 3-10 wt% solu tio n of Polyethyleneimine (P EI).
The method of claim 1, wherein the i mme rsion time in Step 3 is 60-120 m in and th e te mperature of t he sol ution is 40-80 °C.
The method of claim 1, wherein the pI val ue of t he al kaline GO solu ti on in Step 4 is 8.5-10,
9. The method of claim 1, wherein a O.1M solutio n of NaOH- is a dded to the GO solution to for m th e a lk aline GO solution in Step 4. 1 0. The method of claim 1, wherein the imm ersio n time in Step 4i is 6-12 h ours and t he te mp erature of the solution is 1 5 -35 °C. 11. The method of claim 1, wherein the s olution of m eta l ion in Step 5 is a 0.05- 0.15M AgN O 3 so lu tio n. 1 2. The method of claim 1, wherein the i rmersion time in Step 5 is 20-40 m in anid the temp erature of th e solution is 30-70 °C. 13. The method of claim 1, wherein the solution of reductami. in Step 6 is a solution sel ected fro m the group c onsisting of HI solution, so dium boro hydride solution, ascorbic ac id solution, ethan ol solution, a nd hydrazin e solution. 13 1 4. The method of claim 1, wherein the i rnm ers ion ti me in Step 6 is 1.5-2.5 h ours anid the temperature of the solutio n is 30-70 °C.
1 5. The method of claim 1, wherein a sonication procedure is included in the imersion process of Step 1 to the Step 6. 14
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Substrate (Si/SiO2, prewashed with ethanol) immersed in piranha solution (concentrated H₂SO₄ 95-98%: H₂O₂ ~30%, ratio 7:3) for 20-40 min at 50-90°C (preferably 30 min at 70°C), with sonication for 5-6 seconds; then rinsed with DI water and dried under nitrogen gas to provide -OH groups on substrate and hole surfaces.
2 materials1 process step
Treated substrate from Step 1 immersed in 0.5-1.5 V% GPTMS in toluene at 50-70°C for 15-25 min (preferably 70°C for 20 min), with sonication for 5 seconds after immersion, then quickly dried under nitrogen gas.
2 materials1 process step
Treated substrate from Step 2 immersed in 3-10 wt% PEI solution in ethanol at 40-80°C for 60-120 min (preferably 60°C for 90 min), with sonication for 5 seconds, then dried under nitrogen gas.
2 materials1 process step
Treated substrate from Step 3 immersed in alkaline GO solution (NaOH 0.1M added to keep pH 8.5-10, preferably 9.3) at 25°C for 12 hours, with sonication for 5-7 seconds; GO surface is alcoholized in alkaline condition.
1 material1 process step
Treated substrate from Step 4 immersed in 0.05-0.15M (preferably 0.1M) AgNO₃ solution at 30-70°C for 20-40 min (preferably 50°C for 30 min), with sonication for 5 seconds, then rinsed with DI water and dried under nitrogen.
6 materials1 process step
Treated substrate from Step 5 immersed in HI solution at 30-70°C for 1.5-2.5 hours (preferably 50°C for 2 hours), with sonication for 5 seconds, then rinsed with DI water and dried under nitrogen gas. Reductant may alternatively be sodium borohydride, ascorbic acid, ethanol, or hydrazine solution. GO is reduced to rGO and metal ion to metal atom.
Materials described outside the worked examples.
graphene oxide
GO
metal ion solution
reductant solution
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
contact angle before piranha treatment | 69.14 degrees | Si/SiO₂ |
Patent
Atlas literature
Patent
US 9,105,696Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for coating a layer of reduced graphene oxide on the surface of holes in a substrate, comprising:-S tep 1 (su rface b ydrophi lic treat ment) wash ing the substrate with alcohol, inm ersi n g the s u bst r ate in a m ixe d sol u tio n of co n centrate d sulfuric acid a nd concen trated hydroge n peroxide, and re mov ing organic r ernaini s o n the substrate, tto offer the surfa c es of the substrate and h oles carrying-OH groups;-S tep 2 (self- assembly of a silane layer) imn ersing the treated substrate from S tep 1 in a sila ne solution to for m a self ass em bly silane layer on the surface of the substrate and t he holes;-S tep 3 (grafting of a polymer layer) immersing the treated substrate from S tep 2 in a polymer solution to form a pol y mer la y er on the self-assembly si lane layer;-S tep 4 (gr aftin g of a g raph ene o x ide (GO) layer) imm ersing the treated substrate from Step 3 in an al k alin e GO solution to gra ft a GO layer on t he polym e r layer;-S tep 5 (intercalati o n of metal ions) immersing the treated substrate from S tep 4 in a solution of metal ion to interc a lat e the metal ions into t he GO layer, and form a metal ion/G(abrasion; and-S tep 6 (formation of a metal ato m/rGO co mpo site layer) immersing the treated s ub str a te from S tep 5 in a so lu tion of re ductant to reduce the meta l ion into m etal atom, and the GO layer into a reduced graphene oxide (rG O) layer to form a metal ato rn/rGO composite layer on the s u bstrate surface and the h ole surfac e.
The method of claim 1, wherein the i mm ersion time in S tep 1 is 20-40 m in and 12 the te mpe rat ure of the solution is 50-90 °C.
The method of claim 1, wherein the silan e solution i n Step 2 is a 0.5-1.5V% solution of epoxy silane.
The method of claim 3, wherein the silan e solution i n Step 2 is a solution of 3 -(2,3-epoxypropoxy)propyltrimethoxysilane (GPTMS). 5. The method of claim 1, wherein the i mmersion timec in Step 2 is 15-25 nin an d the temp erat u re of t h e solution is 50-70 °C.
6. The method of claim 1, wherein the pol yme r sol u tion in St ep 3 is a 3-10 wt% solu tio n of Polyethyleneimine (P EI).
The method of claim 1, wherein the i mme rsion time in Step 3 is 60-120 m in and th e te mperature of t he sol ution is 40-80 °C.
The method of claim 1, wherein the pI val ue of t he al kaline GO solu ti on in Step 4 is 8.5-10,
9. The method of claim 1, wherein a O.1M solutio n of NaOH- is a dded to the GO solution to for m th e a lk aline GO solution in Step 4. 1 0. The method of claim 1, wherein the imm ersio n time in Step 4i is 6-12 h ours and t he te mp erature of the solution is 1 5 -35 °C. 11. The method of claim 1, wherein the s olution of m eta l ion in Step 5 is a 0.05- 0.15M AgN O 3 so lu tio n. 1 2. The method of claim 1, wherein the i rmersion time in Step 5 is 20-40 m in anid the temp erature of th e solution is 30-70 °C. 13. The method of claim 1, wherein the solution of reductami. in Step 6 is a solution sel ected fro m the group c onsisting of HI solution, so dium boro hydride solution, ascorbic ac id solution, ethan ol solution, a nd hydrazin e solution. 13 1 4. The method of claim 1, wherein the i rnm ers ion ti me in Step 6 is 1.5-2.5 h ours anid the temperature of the solutio n is 30-70 °C.
1 5. The method of claim 1, wherein a sonication procedure is included in the imersion process of Step 1 to the Step 6. 14
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Substrate (Si/SiO2, prewashed with ethanol) immersed in piranha solution (concentrated H₂SO₄ 95-98%: H₂O₂ ~30%, ratio 7:3) for 20-40 min at 50-90°C (preferably 30 min at 70°C), with sonication for 5-6 seconds; then rinsed with DI water and dried under nitrogen gas to provide -OH groups on substrate and hole surfaces.
2 materials1 process step
Treated substrate from Step 1 immersed in 0.5-1.5 V% GPTMS in toluene at 50-70°C for 15-25 min (preferably 70°C for 20 min), with sonication for 5 seconds after immersion, then quickly dried under nitrogen gas.
2 materials1 process step
Treated substrate from Step 2 immersed in 3-10 wt% PEI solution in ethanol at 40-80°C for 60-120 min (preferably 60°C for 90 min), with sonication for 5 seconds, then dried under nitrogen gas.
2 materials1 process step
Treated substrate from Step 3 immersed in alkaline GO solution (NaOH 0.1M added to keep pH 8.5-10, preferably 9.3) at 25°C for 12 hours, with sonication for 5-7 seconds; GO surface is alcoholized in alkaline condition.
1 material1 process step
Treated substrate from Step 4 immersed in 0.05-0.15M (preferably 0.1M) AgNO₃ solution at 30-70°C for 20-40 min (preferably 50°C for 30 min), with sonication for 5 seconds, then rinsed with DI water and dried under nitrogen.
6 materials1 process step
Treated substrate from Step 5 immersed in HI solution at 30-70°C for 1.5-2.5 hours (preferably 50°C for 2 hours), with sonication for 5 seconds, then rinsed with DI water and dried under nitrogen gas. Reductant may alternatively be sodium borohydride, ascorbic acid, ethanol, or hydrazine solution. GO is reduced to rGO and metal ion to metal atom.
Materials described outside the worked examples.
graphene oxide
GO
metal ion solution
reductant solution
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
contact angle before piranha treatment | 69.14 degrees | Si/SiO₂ |
Patent
Atlas literature
Patent
US 9,105,696Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for coating a layer of reduced graphene oxide on the surface of holes in a substrate, comprising:-S tep 1 (su rface b ydrophi lic treat ment) wash ing the substrate with alcohol, inm ersi n g the s u bst r ate in a m ixe d sol u tio n of co n centrate d sulfuric acid a nd concen trated hydroge n peroxide, and re mov ing organic r ernaini s o n the substrate, tto offer the surfa c es of the substrate and h oles carrying-OH groups;-S tep 2 (self- assembly of a silane layer) imn ersing the treated substrate from S tep 1 in a sila ne solution to for m a self ass em bly silane layer on the surface of the substrate and t he holes;-S tep 3 (grafting of a polymer layer) immersing the treated substrate from S tep 2 in a polymer solution to form a pol y mer la y er on the self-assembly si lane layer;-S tep 4 (gr aftin g of a g raph ene o x ide (GO) layer) imm ersing the treated substrate from Step 3 in an al k alin e GO solution to gra ft a GO layer on t he polym e r layer;-S tep 5 (intercalati o n of metal ions) immersing the treated substrate from S tep 4 in a solution of metal ion to interc a lat e the metal ions into t he GO layer, and form a metal ion/G(abrasion; and-S tep 6 (formation of a metal ato m/rGO co mpo site layer) immersing the treated s ub str a te from S tep 5 in a so lu tion of re ductant to reduce the meta l ion into m etal atom, and the GO layer into a reduced graphene oxide (rG O) layer to form a metal ato rn/rGO composite layer on the s u bstrate surface and the h ole surfac e.
The method of claim 1, wherein the i mm ersion time in S tep 1 is 20-40 m in and 12 the te mpe rat ure of the solution is 50-90 °C.
The method of claim 1, wherein the silan e solution i n Step 2 is a 0.5-1.5V% solution of epoxy silane.
The method of claim 3, wherein the silan e solution i n Step 2 is a solution of 3 -(2,3-epoxypropoxy)propyltrimethoxysilane (GPTMS). 5. The method of claim 1, wherein the i mmersion timec in Step 2 is 15-25 nin an d the temp erat u re of t h e solution is 50-70 °C.
6. The method of claim 1, wherein the pol yme r sol u tion in St ep 3 is a 3-10 wt% solu tio n of Polyethyleneimine (P EI).
The method of claim 1, wherein the i mme rsion time in Step 3 is 60-120 m in and th e te mperature of t he sol ution is 40-80 °C.
The method of claim 1, wherein the pI val ue of t he al kaline GO solu ti on in Step 4 is 8.5-10,
9. The method of claim 1, wherein a O.1M solutio n of NaOH- is a dded to the GO solution to for m th e a lk aline GO solution in Step 4. 1 0. The method of claim 1, wherein the imm ersio n time in Step 4i is 6-12 h ours and t he te mp erature of the solution is 1 5 -35 °C. 11. The method of claim 1, wherein the s olution of m eta l ion in Step 5 is a 0.05- 0.15M AgN O 3 so lu tio n. 1 2. The method of claim 1, wherein the i rmersion time in Step 5 is 20-40 m in anid the temp erature of th e solution is 30-70 °C. 13. The method of claim 1, wherein the solution of reductami. in Step 6 is a solution sel ected fro m the group c onsisting of HI solution, so dium boro hydride solution, ascorbic ac id solution, ethan ol solution, a nd hydrazin e solution. 13 1 4. The method of claim 1, wherein the i rnm ers ion ti me in Step 6 is 1.5-2.5 h ours anid the temperature of the solutio n is 30-70 °C.
1 5. The method of claim 1, wherein a sonication procedure is included in the imersion process of Step 1 to the Step 6. 14
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
Substrate (Si/SiO2, prewashed with ethanol) immersed in piranha solution (concentrated H₂SO₄ 95-98%: H₂O₂ ~30%, ratio 7:3) for 20-40 min at 50-90°C (preferably 30 min at 70°C), with sonication for 5-6 seconds; then rinsed with DI water and dried under nitrogen gas to provide -OH groups on substrate and hole surfaces.
2 materials1 process step
Treated substrate from Step 1 immersed in 0.5-1.5 V% GPTMS in toluene at 50-70°C for 15-25 min (preferably 70°C for 20 min), with sonication for 5 seconds after immersion, then quickly dried under nitrogen gas.
2 materials1 process step
Treated substrate from Step 2 immersed in 3-10 wt% PEI solution in ethanol at 40-80°C for 60-120 min (preferably 60°C for 90 min), with sonication for 5 seconds, then dried under nitrogen gas.
2 materials1 process step
Treated substrate from Step 3 immersed in alkaline GO solution (NaOH 0.1M added to keep pH 8.5-10, preferably 9.3) at 25°C for 12 hours, with sonication for 5-7 seconds; GO surface is alcoholized in alkaline condition.
1 material1 process step
Treated substrate from Step 4 immersed in 0.05-0.15M (preferably 0.1M) AgNO₃ solution at 30-70°C for 20-40 min (preferably 50°C for 30 min), with sonication for 5 seconds, then rinsed with DI water and dried under nitrogen.
6 materials1 process step
Treated substrate from Step 5 immersed in HI solution at 30-70°C for 1.5-2.5 hours (preferably 50°C for 2 hours), with sonication for 5 seconds, then rinsed with DI water and dried under nitrogen gas. Reductant may alternatively be sodium borohydride, ascorbic acid, ethanol, or hydrazine solution. GO is reduced to rGO and metal ion to metal atom.
Materials described outside the worked examples.
graphene oxide
GO
metal ion solution
reductant solution
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
contact angle before piranha treatment | 69.14 degrees | Si/SiO₂ |
metal atom/rGO composite layer
epoxy silane
| 24.85 degrees |
Si/SiO₂ |
Temperature | 50–90 °C | — |
Temperature | 50–70 °C | — |
Duration | 15–25 minutes | — |
Voltage | 0.5–1.5 V | — |
Temperature | 40–80 °C | — |
Duration | 60–120 min | — |
Temperature | 30–70 °C | — |
Duration | 20–40 minutes | — |
Temperature | 5–35 °C | — |
metal atom/rGO composite layer
epoxy silane
| 24.85 degrees |
Si/SiO₂ |
Temperature | 50–90 °C | — |
Temperature | 50–70 °C | — |
Duration | 15–25 minutes | — |
Voltage | 0.5–1.5 V | — |
Temperature | 40–80 °C | — |
Duration | 60–120 min | — |
Temperature | 30–70 °C | — |
Duration | 20–40 minutes | — |
Temperature | 5–35 °C | — |
metal atom/rGO composite layer
epoxy silane
| 24.85 degrees |
Si/SiO₂ |
Temperature | 50–90 °C | — |
Temperature | 50–70 °C | — |
Duration | 15–25 minutes | — |
Voltage | 0.5–1.5 V | — |
Temperature | 40–80 °C | — |
Duration | 60–120 min | — |
Temperature | 30–70 °C | — |
Duration | 20–40 minutes | — |
Temperature | 5–35 °C | — |
metal atom/rGO composite layer
epoxy silane
| 24.85 degrees |
Si/SiO₂ |
Temperature | 50–90 °C | — |
Temperature | 50–70 °C | — |
Duration | 15–25 minutes | — |
Voltage | 0.5–1.5 V | — |
Temperature | 40–80 °C | — |
Duration | 60–120 min | — |
Temperature | 30–70 °C | — |
Duration | 20–40 minutes | — |
Temperature | 5–35 °C | — |