Patent
US 8,501,024METHOD OF MANUFACTURE OF ATOMICALLY THIN BORON NITRIDE
Alexander K. Zettl
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,501,024Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, while graphite maintains an offset Bernal structure (ABA). Boron Atty Docket No. IB-2788 nitride maintains an AAA stacking where boron and nitrogen …
FIG. 2F, in an exemplary embodiment, placing step 242 includes a step 260 of placing a transmission electron microscope (TEM) grid on top of the BN flake. …
FIG. 3c. Knowledge that for multilayers (i.e., regions with layer number n>l), the atoms in normal projection for AAA stacking are located directly on top of …
FIG. 4c. Effect of TEM Instrumentation Errors [0067] I n cases where TEM instrumentation errors exist, it has been found, both experimentally and through …
FIG. 5a. The upper defect 510 resides in an n= l, monolayer region of the sample, while the lower defect 512 resides in an n=3 region. [0070) A model f or the …
FIG. 6b. [0074] It was observed that zigzag edges 610 in BN were more stable under the TEM electron beam. A recent study on the edge dynamics in a single layer …
FIG. 7a.
FIG. 21, in an exemplary embodiment, immersing step 250 includes a step 275 of immersing the BN flake adhered to the support structure in a methylpyrrolidone …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
AMENDMENTS TO THE CLAIMS 1. A method of fabricating single layer hexagonal boron nitride comp ri sing: (a) providing multilayer boron nitride suspended across a gap of a support structure; and (b) performing a reactive ion etch upon on the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.
The method of claim 1 wherein operation (b) the-perf-emmi g comprises using e mple ying a mixture of oxygen and nitrogen plasmas.
A method of fabricating a t-l eas t-e ne single layer hexagonal boron nitride (h-BN) comprising: (a) suspending a t-least-en e multilayer boron nitride across a gap of a support structure; and _(b performing a reactive ion etch upe n on the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.
The method of claim 4 wherein operation (a) the-st spe ndinTg comp ri ses: peeling boron nitride (BN) powder; moving the peeled BN powder to a wafer; identifying a t-least-en e BN flake; and transferring the BN flake to the support structure.
The method of claim 4 wherein operation (b) mixture of oxygen and nitrogen plasmas.
Materials described outside the worked examples.
single layer hexagonal boron nitride
h-BN
multilayer boron nitride
BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2F, in an exemplary embodiment, placing step 242 includes a step 260 of placing a transmission electron microscope (TEM) grid on top of the BN flake. …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,501,024Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, while graphite maintains an offset Bernal structure (ABA). Boron Atty Docket No. IB-2788 nitride maintains an AAA stacking where boron and nitrogen …
FIG. 2F, in an exemplary embodiment, placing step 242 includes a step 260 of placing a transmission electron microscope (TEM) grid on top of the BN flake. …
FIG. 3c. Knowledge that for multilayers (i.e., regions with layer number n>l), the atoms in normal projection for AAA stacking are located directly on top of …
FIG. 4c. Effect of TEM Instrumentation Errors [0067] I n cases where TEM instrumentation errors exist, it has been found, both experimentally and through …
FIG. 5a. The upper defect 510 resides in an n= l, monolayer region of the sample, while the lower defect 512 resides in an n=3 region. [0070) A model f or the …
FIG. 6b. [0074] It was observed that zigzag edges 610 in BN were more stable under the TEM electron beam. A recent study on the edge dynamics in a single layer …
FIG. 7a.
FIG. 21, in an exemplary embodiment, immersing step 250 includes a step 275 of immersing the BN flake adhered to the support structure in a methylpyrrolidone …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
AMENDMENTS TO THE CLAIMS 1. A method of fabricating single layer hexagonal boron nitride comp ri sing: (a) providing multilayer boron nitride suspended across a gap of a support structure; and (b) performing a reactive ion etch upon on the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.
The method of claim 1 wherein operation (b) the-perf-emmi g comprises using e mple ying a mixture of oxygen and nitrogen plasmas.
A method of fabricating a t-l eas t-e ne single layer hexagonal boron nitride (h-BN) comprising: (a) suspending a t-least-en e multilayer boron nitride across a gap of a support structure; and _(b performing a reactive ion etch upe n on the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.
The method of claim 4 wherein operation (a) the-st spe ndinTg comp ri ses: peeling boron nitride (BN) powder; moving the peeled BN powder to a wafer; identifying a t-least-en e BN flake; and transferring the BN flake to the support structure.
The method of claim 4 wherein operation (b) mixture of oxygen and nitrogen plasmas.
Materials described outside the worked examples.
single layer hexagonal boron nitride
h-BN
multilayer boron nitride
BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2F, in an exemplary embodiment, placing step 242 includes a step 260 of placing a transmission electron microscope (TEM) grid on top of the BN flake. …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,501,024Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, while graphite maintains an offset Bernal structure (ABA). Boron Atty Docket No. IB-2788 nitride maintains an AAA stacking where boron and nitrogen …
FIG. 2F, in an exemplary embodiment, placing step 242 includes a step 260 of placing a transmission electron microscope (TEM) grid on top of the BN flake. …
FIG. 3c. Knowledge that for multilayers (i.e., regions with layer number n>l), the atoms in normal projection for AAA stacking are located directly on top of …
FIG. 4c. Effect of TEM Instrumentation Errors [0067] I n cases where TEM instrumentation errors exist, it has been found, both experimentally and through …
FIG. 5a. The upper defect 510 resides in an n= l, monolayer region of the sample, while the lower defect 512 resides in an n=3 region. [0070) A model f or the …
FIG. 6b. [0074] It was observed that zigzag edges 610 in BN were more stable under the TEM electron beam. A recent study on the edge dynamics in a single layer …
FIG. 7a.
FIG. 21, in an exemplary embodiment, immersing step 250 includes a step 275 of immersing the BN flake adhered to the support structure in a methylpyrrolidone …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
AMENDMENTS TO THE CLAIMS 1. A method of fabricating single layer hexagonal boron nitride comp ri sing: (a) providing multilayer boron nitride suspended across a gap of a support structure; and (b) performing a reactive ion etch upon on the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.
The method of claim 1 wherein operation (b) the-perf-emmi g comprises using e mple ying a mixture of oxygen and nitrogen plasmas.
A method of fabricating a t-l eas t-e ne single layer hexagonal boron nitride (h-BN) comprising: (a) suspending a t-least-en e multilayer boron nitride across a gap of a support structure; and _(b performing a reactive ion etch upe n on the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.
The method of claim 4 wherein operation (a) the-st spe ndinTg comp ri ses: peeling boron nitride (BN) powder; moving the peeled BN powder to a wafer; identifying a t-least-en e BN flake; and transferring the BN flake to the support structure.
The method of claim 4 wherein operation (b) mixture of oxygen and nitrogen plasmas.
Materials described outside the worked examples.
single layer hexagonal boron nitride
h-BN
multilayer boron nitride
BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2F, in an exemplary embodiment, placing step 242 includes a step 260 of placing a transmission electron microscope (TEM) grid on top of the BN flake. …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,501,024Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, while graphite maintains an offset Bernal structure (ABA). Boron Atty Docket No. IB-2788 nitride maintains an AAA stacking where boron and nitrogen …
FIG. 2F, in an exemplary embodiment, placing step 242 includes a step 260 of placing a transmission electron microscope (TEM) grid on top of the BN flake. …
FIG. 3c. Knowledge that for multilayers (i.e., regions with layer number n>l), the atoms in normal projection for AAA stacking are located directly on top of …
FIG. 4c. Effect of TEM Instrumentation Errors [0067] I n cases where TEM instrumentation errors exist, it has been found, both experimentally and through …
FIG. 5a. The upper defect 510 resides in an n= l, monolayer region of the sample, while the lower defect 512 resides in an n=3 region. [0070) A model f or the …
FIG. 6b. [0074] It was observed that zigzag edges 610 in BN were more stable under the TEM electron beam. A recent study on the edge dynamics in a single layer …
FIG. 7a.
FIG. 21, in an exemplary embodiment, immersing step 250 includes a step 275 of immersing the BN flake adhered to the support structure in a methylpyrrolidone …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
AMENDMENTS TO THE CLAIMS 1. A method of fabricating single layer hexagonal boron nitride comp ri sing: (a) providing multilayer boron nitride suspended across a gap of a support structure; and (b) performing a reactive ion etch upon on the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.
The method of claim 1 wherein operation (b) the-perf-emmi g comprises using e mple ying a mixture of oxygen and nitrogen plasmas.
A method of fabricating a t-l eas t-e ne single layer hexagonal boron nitride (h-BN) comprising: (a) suspending a t-least-en e multilayer boron nitride across a gap of a support structure; and _(b performing a reactive ion etch upe n on the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.
The method of claim 4 wherein operation (a) the-st spe ndinTg comp ri ses: peeling boron nitride (BN) powder; moving the peeled BN powder to a wafer; identifying a t-least-en e BN flake; and transferring the BN flake to the support structure.
The method of claim 4 wherein operation (b) mixture of oxygen and nitrogen plasmas.
Materials described outside the worked examples.
single layer hexagonal boron nitride
h-BN
multilayer boron nitride
BN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2F, in an exemplary embodiment, placing step 242 includes a step 260 of placing a transmission electron microscope (TEM) grid on top of the BN flake. …
Related documents with shared materials, methods, properties, or citations.
oxygen plasma
O₂
nitrogen plasma
N₂
silicon wafer
Si
polyimide
methylpyrrolidone
isopropanol alcohol
FIG. 3c. Knowledge that for multilayers (i.e., regions with layer number n>l), the atoms in normal projection for AAA stacking are located directly on top of …
FIG. 3c. Knowledge that for multilayers (i.e., regions with layer number n>l), the atoms in normal projection for AAA stacking are located directly on top of …
FIG. 4c. Effect of TEM Instrumentation Errors [0067] I n cases where TEM instrumentation errors exist, it has been found, both experimentally and through …
FIG. 6b. [0074] It was observed that zigzag edges 610 in BN were more stable under the TEM electron beam. A recent study on the edge dynamics in a single layer …
oxygen plasma
O₂
nitrogen plasma
N₂
silicon wafer
Si
polyimide
methylpyrrolidone
isopropanol alcohol
FIG. 3c. Knowledge that for multilayers (i.e., regions with layer number n>l), the atoms in normal projection for AAA stacking are located directly on top of …
FIG. 3c. Knowledge that for multilayers (i.e., regions with layer number n>l), the atoms in normal projection for AAA stacking are located directly on top of …
FIG. 4c. Effect of TEM Instrumentation Errors [0067] I n cases where TEM instrumentation errors exist, it has been found, both experimentally and through …
FIG. 6b. [0074] It was observed that zigzag edges 610 in BN were more stable under the TEM electron beam. A recent study on the edge dynamics in a single layer …
oxygen plasma
O₂
nitrogen plasma
N₂
silicon wafer
Si
polyimide
methylpyrrolidone
isopropanol alcohol
FIG. 3c. Knowledge that for multilayers (i.e., regions with layer number n>l), the atoms in normal projection for AAA stacking are located directly on top of …
FIG. 3c. Knowledge that for multilayers (i.e., regions with layer number n>l), the atoms in normal projection for AAA stacking are located directly on top of …
FIG. 4c. Effect of TEM Instrumentation Errors [0067] I n cases where TEM instrumentation errors exist, it has been found, both experimentally and through …
FIG. 6b. [0074] It was observed that zigzag edges 610 in BN were more stable under the TEM electron beam. A recent study on the edge dynamics in a single layer …
oxygen plasma
O₂
nitrogen plasma
N₂
silicon wafer
Si
polyimide
methylpyrrolidone
isopropanol alcohol
FIG. 3c. Knowledge that for multilayers (i.e., regions with layer number n>l), the atoms in normal projection for AAA stacking are located directly on top of …
FIG. 3c. Knowledge that for multilayers (i.e., regions with layer number n>l), the atoms in normal projection for AAA stacking are located directly on top of …
FIG. 4c. Effect of TEM Instrumentation Errors [0067] I n cases where TEM instrumentation errors exist, it has been found, both experimentally and through …
FIG. 6b. [0074] It was observed that zigzag edges 610 in BN were more stable under the TEM electron beam. A recent study on the edge dynamics in a single layer …