Patent
US 10,347,723METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING GRAPHENE MATERIAL
Guenther Ruhl
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,347,723Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 A to 1 C illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figures 2A to 21 illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figures 3A to 3B illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figures 4A to 4B illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figure 5 illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figure 6 illustrates a semiconductor device according to an embodiment.
Figure 7A and 7B illustrate a semiconductor device according to an embodiment.
Figure 8 illustrates processes of a method for manufacturing a semiconductor device according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a semiconductor device, the method comprising: providing a carrier wafer and a silicon carbide wafer; forming a first graphene material on a first side of the silicon carbide wafer; bonding the first side of the silicon carbide wafer with the first graphene material to the carrier wafer; and splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting.
The method of claim 1, wherein the first graphene material is formed on the first side of the silicon carbide wafer by surficial graphitization of the first side of the silicon carbide wafer by thermal decomposition at a temperature range above 1100 0C.
The method of claim 1, wherein forming the first graphene material on the first side of the silicon carbide wafer comprises: in a first step, surficially decomposing the first side of the silicon carbide wafer by evaporating silicon and leaving one or more single graphene layers at the first side of the silicon carbide wafer; and in a second step, decoupling the one or more single graphene layers from the silicon carbide wafer.
The method of claim 1, wherein the first side of the silicon carbide wafer is a C- terminated side, and wherein the first graphene material comprises a plurality of graphene layers formed on the C-terminated side of the silicon carbide wafer.
The method of claim 1, further comprising: forming a second graphene material on the silicon carbide layer after the splitting.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with graphene channel
Materials described outside the worked examples.
silicon carbide wafer
SiC
first graphene material
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–500 nm | — |
Thickness | 50–500 nm |
Patent
Atlas literature
Patent
US 10,347,723Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 A to 1 C illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figures 2A to 21 illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figures 3A to 3B illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figures 4A to 4B illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figure 5 illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figure 6 illustrates a semiconductor device according to an embodiment.
Figure 7A and 7B illustrate a semiconductor device according to an embodiment.
Figure 8 illustrates processes of a method for manufacturing a semiconductor device according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a semiconductor device, the method comprising: providing a carrier wafer and a silicon carbide wafer; forming a first graphene material on a first side of the silicon carbide wafer; bonding the first side of the silicon carbide wafer with the first graphene material to the carrier wafer; and splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting.
The method of claim 1, wherein the first graphene material is formed on the first side of the silicon carbide wafer by surficial graphitization of the first side of the silicon carbide wafer by thermal decomposition at a temperature range above 1100 0C.
The method of claim 1, wherein forming the first graphene material on the first side of the silicon carbide wafer comprises: in a first step, surficially decomposing the first side of the silicon carbide wafer by evaporating silicon and leaving one or more single graphene layers at the first side of the silicon carbide wafer; and in a second step, decoupling the one or more single graphene layers from the silicon carbide wafer.
The method of claim 1, wherein the first side of the silicon carbide wafer is a C- terminated side, and wherein the first graphene material comprises a plurality of graphene layers formed on the C-terminated side of the silicon carbide wafer.
The method of claim 1, further comprising: forming a second graphene material on the silicon carbide layer after the splitting.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with graphene channel
Materials described outside the worked examples.
silicon carbide wafer
SiC
first graphene material
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–500 nm | — |
Thickness | 50–500 nm |
Patent
Atlas literature
Patent
US 10,347,723Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 A to 1 C illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figures 2A to 21 illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figures 3A to 3B illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figures 4A to 4B illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figure 5 illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figure 6 illustrates a semiconductor device according to an embodiment.
Figure 7A and 7B illustrate a semiconductor device according to an embodiment.
Figure 8 illustrates processes of a method for manufacturing a semiconductor device according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a semiconductor device, the method comprising: providing a carrier wafer and a silicon carbide wafer; forming a first graphene material on a first side of the silicon carbide wafer; bonding the first side of the silicon carbide wafer with the first graphene material to the carrier wafer; and splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting.
The method of claim 1, wherein the first graphene material is formed on the first side of the silicon carbide wafer by surficial graphitization of the first side of the silicon carbide wafer by thermal decomposition at a temperature range above 1100 0C.
The method of claim 1, wherein forming the first graphene material on the first side of the silicon carbide wafer comprises: in a first step, surficially decomposing the first side of the silicon carbide wafer by evaporating silicon and leaving one or more single graphene layers at the first side of the silicon carbide wafer; and in a second step, decoupling the one or more single graphene layers from the silicon carbide wafer.
The method of claim 1, wherein the first side of the silicon carbide wafer is a C- terminated side, and wherein the first graphene material comprises a plurality of graphene layers formed on the C-terminated side of the silicon carbide wafer.
The method of claim 1, further comprising: forming a second graphene material on the silicon carbide layer after the splitting.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with graphene channel
Materials described outside the worked examples.
silicon carbide wafer
SiC
first graphene material
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–500 nm | — |
Thickness | 50–500 nm |
Patent
Atlas literature
Patent
US 10,347,723Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 1 A to 1 C illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figures 2A to 21 illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figures 3A to 3B illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figures 4A to 4B illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figure 5 illustrate processes of a method for manufacturing a semiconductor device according to an embodiment.
Figure 6 illustrates a semiconductor device according to an embodiment.
Figure 7A and 7B illustrate a semiconductor device according to an embodiment.
Figure 8 illustrates processes of a method for manufacturing a semiconductor device according to an embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a semiconductor device, the method comprising: providing a carrier wafer and a silicon carbide wafer; forming a first graphene material on a first side of the silicon carbide wafer; bonding the first side of the silicon carbide wafer with the first graphene material to the carrier wafer; and splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting.
The method of claim 1, wherein the first graphene material is formed on the first side of the silicon carbide wafer by surficial graphitization of the first side of the silicon carbide wafer by thermal decomposition at a temperature range above 1100 0C.
The method of claim 1, wherein forming the first graphene material on the first side of the silicon carbide wafer comprises: in a first step, surficially decomposing the first side of the silicon carbide wafer by evaporating silicon and leaving one or more single graphene layers at the first side of the silicon carbide wafer; and in a second step, decoupling the one or more single graphene layers from the silicon carbide wafer.
The method of claim 1, wherein the first side of the silicon carbide wafer is a C- terminated side, and wherein the first graphene material comprises a plurality of graphene layers formed on the C-terminated side of the silicon carbide wafer.
The method of claim 1, further comprising: forming a second graphene material on the silicon carbide layer after the splitting.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device with graphene channel
Materials described outside the worked examples.
silicon carbide wafer
SiC
first graphene material
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–500 nm | — |
Thickness | 50–500 nm |
carrier wafer
| — |
Temperature | 1200–1600 °C | — |
Temperature | 1400–1650 °C | — |
Temperature | 1200–1400 °C | — |
carrier wafer
| — |
Temperature | 1200–1600 °C | — |
Temperature | 1400–1650 °C | — |
Temperature | 1200–1400 °C | — |
carrier wafer
| — |
Temperature | 1200–1600 °C | — |
Temperature | 1400–1650 °C | — |
Temperature | 1200–1400 °C | — |
carrier wafer
| — |
Temperature | 1200–1600 °C | — |
Temperature | 1400–1650 °C | — |
Temperature | 1200–1400 °C | — |