Patent
US 10,494,557Method of Preparing Nitrogen-Doped Graphene and Method of Producing Composite Heat
Wei Jen Liu
US
Copyright © 2026 Matter42. All rights reserved.
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of the structure of a composite heat dispatching plate of experimental samples 1 to 5, 7 to 9, 12 and embodiments 12 to 14 …
FIG. 2 is a schematic illustration of a testing device of the composite heat dispatching plate of experimental sample 1 to 5, 7 to 9, 12 and embodiments 12 to …
FIG. 3B is a X-ray Photoelectron spectroscopy (XPS) bond energy chart of the nitrogen- doped graphene according to the present invention; [0030]
FIG. 4 is a schematic illustration of the structure of a composite heat dispatching plates of experimental samples 6, 10 -11 and 13 of the present invention; …
FIG. 5 is a microscope image of a copper foil coated with graphene not being nitrogen doped of experimental sample 5 of the present invention; [0033]
FIG. 6 is a temperature distribution chart (thermograms) on the overall 15 observation on the composite heat dispatching plate coated with nitrogen-doped …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-2 Canceled
Canceled
A method of preparing nitrogen-doped graphene for a heat dispatching plate, comprising the steps of: mixing at least one solid-state precursor containing nitrogen with a solid-state graphene to directly form a powder mixture by using a solid phase mixing method; and sintering said powder mixture under a reducing atmosphere to obtain said nitrogen-doped graphene, wherein said solid-state precursor containing nitrogen is an organic solid-state nitrogen source, and said organic solid-state nitrogen source is selected from at least one of the following: C 6 H 5 COON H 4, HOC(CO 2 NH 4)(CH 2 CO 2 NH 4) 2, HCO 2 NH 4, C 11 H 7 N, C 10 H 6 (CN) 2 and C 12 H 7 N O 2. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said solid-state graphene is selected from at least one of monolayer graphene, multilayer graphene, reduced graphene oxide and graphene derivatives. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said nitrogen-doped graphene has bonding configurations of Pyridinic N(398.1-399.3 eV) and Graphitic N(401.1-402.7 eV). Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein a mass mixing ratio between said solid-state precursor containing nitrogen and said solid-state graphene is over 1. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein a mass mixing ratio between said solid-state graphene and said solid-state precursor containing nitrogen is between 1:1 and 1:30. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein a nitrogen content of said nitrogen-doped graphene is between 0.04 wt % and 5 wt %. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said powder mixture is sintered under a temperature between 300 ° C and 800 °C. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said powder mixture is sintered for 0.5 to 10 hours. Previously presented
A method of producing a composite heat dispatching plate, comprising the steps of: mixing a nitrogen-doped graphene with a polymer bonding agent to form a mixture slurry, wherein said nitrogen-doped graphene is prepared by using any of the methods of claims 3, 6 to 12, wherein said nitrogen-doped graphene content in said mixture slurry is between 50 wt % and 93 wt %; coating said mixture slurry onto at least one surface of a metal substrate to form a composite material; drying said composite material; and obtaining said composite heat dispatching plate with a coating of nitrogen- doped graphene. Previously presented
Canceled
The method of preparing nitrogen-doped graphene according to claim [[1]] 3, wherein said solid-state precursor containing nitrogen is a combination of an organic solid-state nitrogen source and an inorganic solid-state nitrogen source; said organic solid-state nitrogen source is selected from at least one of the following: C 6 H 12 N 4, C 6 H 5 COONH 4, (NH 4) 2 C O 3, HOC(CO 2 NH 4)(CH 2 CO 2 NH 4) 2, HC O 2 NH 4, C 11 H 7 N, C 3 H 3 N 6, C 1 oH 6 (CN) 2 and C 12 H 7 N O 2.; and said inorganic solid-state nitrogen source is selected from at least one of NH 4 NO 3 and other inorganic nitrate salts. Currently amended
Canceled
A method of preparing nitrogen-doped graphene for a heat dispatching plate, comprising: mixing at least one solid-state precursor containing nitrogen with a solid-state graphene to directly form a powder mixture; and sintering said powder mixture under a reducing atmosphere to obtain said nitrogen-doped graphene, wherein said solid-state precursor containing nitrogen is an organic solid-state nitrogen source, and said organic solid-state nitrogen source is selected from at least one of the following: C 6 H 5 C OONH 4, HOC(CO 2 NH 4)(CH 2 CO 2 NH 4) 2, HCO 2 NH 4, C 11 H 7 N, C 1 0 H 6 (CN) 2 and C 12 H 7 N O 2. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
composite heat dispatching plate
Materials described outside the worked examples.
nitrogen-doped graphene
ammonium benzoate
C₆H₅COONH₄
ammonium citrate tribasic
HOC(CO₂NH₄)(CH₂CO₂NH₄)2
ammonium formate
HCO₂NH₄
acridine
C₁₁H₇N
2,3-dicyanonaphtalene
C₁₀H₆(CN)2
acridone
C₁₂H₇NO₂
hexamethylenetetramine
C₆H₁₂N₄
ammonium carbonate
(NH₄)2CO₃
melamine
C₃H₃N₆
ammonium nitrate
NH₄NO₃
inorganic nitrate salts
monolayer graphene
multilayer graphene
reduced graphene oxide
graphene derivatives
polymer bonding agent
Carboxymethyl Cellulose
copper foil
conductive graphite
butadiene styrene rubber
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B is a X-ray Photoelectron spectroscopy (XPS) bond energy chart of the nitrogen- doped graphene according to the present invention; [0030]
FIG. 3B is a X-ray Photoelectron spectroscopy (XPS) bond energy chart of the nitrogen- doped graphene according to the present invention; [0030]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pyridinic N binding energy | — | nitrogen-doped graphene |
Graphitic N binding energy | — | nitrogen-doped graphene |
Temperature | 300–800 °C | — |
Duration | 0.5–10 hours | — |
— | 398.1–399.3 eV | — |
— | 401.1–402.7 eV | — |
— | 1–399.3 eV | — |
— | 1–402.7 eV | — |
Related documents with shared materials, methods, properties, or citations.
Method of Manufacturing Graphene Using Photoreduction
TITANIUM DIOXIDE / SULFONATED GRAPHENE OXIDE / AG NANOPARTICLE COMPOSITE MEMBRANE AND PREPARATION AND APPLICATION THEREOF
METHOD FOR TREATING GRAPHENE SHEETS FOR LARGE-SCALE TRANSFER USING FREE-FLOAT METHOD
ALTERATION OF GRAPHENE DEFECTS
SUPERLUBRICATING GRAPHENE AND GRAPHENE OXIDE FILMS
METHOD AND SYSTEM FOR GROWTH OF GRAPHENE NANOSTRIPES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of the structure of a composite heat dispatching plate of experimental samples 1 to 5, 7 to 9, 12 and embodiments 12 to 14 …
FIG. 2 is a schematic illustration of a testing device of the composite heat dispatching plate of experimental sample 1 to 5, 7 to 9, 12 and embodiments 12 to …
FIG. 3B is a X-ray Photoelectron spectroscopy (XPS) bond energy chart of the nitrogen- doped graphene according to the present invention; [0030]
FIG. 4 is a schematic illustration of the structure of a composite heat dispatching plates of experimental samples 6, 10 -11 and 13 of the present invention; …
FIG. 5 is a microscope image of a copper foil coated with graphene not being nitrogen doped of experimental sample 5 of the present invention; [0033]
FIG. 6 is a temperature distribution chart (thermograms) on the overall 15 observation on the composite heat dispatching plate coated with nitrogen-doped …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-2 Canceled
Canceled
A method of preparing nitrogen-doped graphene for a heat dispatching plate, comprising the steps of: mixing at least one solid-state precursor containing nitrogen with a solid-state graphene to directly form a powder mixture by using a solid phase mixing method; and sintering said powder mixture under a reducing atmosphere to obtain said nitrogen-doped graphene, wherein said solid-state precursor containing nitrogen is an organic solid-state nitrogen source, and said organic solid-state nitrogen source is selected from at least one of the following: C 6 H 5 COON H 4, HOC(CO 2 NH 4)(CH 2 CO 2 NH 4) 2, HCO 2 NH 4, C 11 H 7 N, C 10 H 6 (CN) 2 and C 12 H 7 N O 2. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said solid-state graphene is selected from at least one of monolayer graphene, multilayer graphene, reduced graphene oxide and graphene derivatives. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said nitrogen-doped graphene has bonding configurations of Pyridinic N(398.1-399.3 eV) and Graphitic N(401.1-402.7 eV). Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein a mass mixing ratio between said solid-state precursor containing nitrogen and said solid-state graphene is over 1. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein a mass mixing ratio between said solid-state graphene and said solid-state precursor containing nitrogen is between 1:1 and 1:30. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein a nitrogen content of said nitrogen-doped graphene is between 0.04 wt % and 5 wt %. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said powder mixture is sintered under a temperature between 300 ° C and 800 °C. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said powder mixture is sintered for 0.5 to 10 hours. Previously presented
A method of producing a composite heat dispatching plate, comprising the steps of: mixing a nitrogen-doped graphene with a polymer bonding agent to form a mixture slurry, wherein said nitrogen-doped graphene is prepared by using any of the methods of claims 3, 6 to 12, wherein said nitrogen-doped graphene content in said mixture slurry is between 50 wt % and 93 wt %; coating said mixture slurry onto at least one surface of a metal substrate to form a composite material; drying said composite material; and obtaining said composite heat dispatching plate with a coating of nitrogen- doped graphene. Previously presented
Canceled
The method of preparing nitrogen-doped graphene according to claim [[1]] 3, wherein said solid-state precursor containing nitrogen is a combination of an organic solid-state nitrogen source and an inorganic solid-state nitrogen source; said organic solid-state nitrogen source is selected from at least one of the following: C 6 H 12 N 4, C 6 H 5 COONH 4, (NH 4) 2 C O 3, HOC(CO 2 NH 4)(CH 2 CO 2 NH 4) 2, HC O 2 NH 4, C 11 H 7 N, C 3 H 3 N 6, C 1 oH 6 (CN) 2 and C 12 H 7 N O 2.; and said inorganic solid-state nitrogen source is selected from at least one of NH 4 NO 3 and other inorganic nitrate salts. Currently amended
Canceled
A method of preparing nitrogen-doped graphene for a heat dispatching plate, comprising: mixing at least one solid-state precursor containing nitrogen with a solid-state graphene to directly form a powder mixture; and sintering said powder mixture under a reducing atmosphere to obtain said nitrogen-doped graphene, wherein said solid-state precursor containing nitrogen is an organic solid-state nitrogen source, and said organic solid-state nitrogen source is selected from at least one of the following: C 6 H 5 C OONH 4, HOC(CO 2 NH 4)(CH 2 CO 2 NH 4) 2, HCO 2 NH 4, C 11 H 7 N, C 1 0 H 6 (CN) 2 and C 12 H 7 N O 2. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
composite heat dispatching plate
Materials described outside the worked examples.
nitrogen-doped graphene
ammonium benzoate
C₆H₅COONH₄
ammonium citrate tribasic
HOC(CO₂NH₄)(CH₂CO₂NH₄)2
ammonium formate
HCO₂NH₄
acridine
C₁₁H₇N
2,3-dicyanonaphtalene
C₁₀H₆(CN)2
acridone
C₁₂H₇NO₂
hexamethylenetetramine
C₆H₁₂N₄
ammonium carbonate
(NH₄)2CO₃
melamine
C₃H₃N₆
ammonium nitrate
NH₄NO₃
inorganic nitrate salts
monolayer graphene
multilayer graphene
reduced graphene oxide
graphene derivatives
polymer bonding agent
Carboxymethyl Cellulose
copper foil
conductive graphite
butadiene styrene rubber
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B is a X-ray Photoelectron spectroscopy (XPS) bond energy chart of the nitrogen- doped graphene according to the present invention; [0030]
FIG. 3B is a X-ray Photoelectron spectroscopy (XPS) bond energy chart of the nitrogen- doped graphene according to the present invention; [0030]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pyridinic N binding energy | — | nitrogen-doped graphene |
Graphitic N binding energy | — | nitrogen-doped graphene |
Temperature | 300–800 °C | — |
Duration | 0.5–10 hours | — |
— | 398.1–399.3 eV | — |
— | 401.1–402.7 eV | — |
— | 1–399.3 eV | — |
— | 1–402.7 eV | — |
Related documents with shared materials, methods, properties, or citations.
Method of Manufacturing Graphene Using Photoreduction
TITANIUM DIOXIDE / SULFONATED GRAPHENE OXIDE / AG NANOPARTICLE COMPOSITE MEMBRANE AND PREPARATION AND APPLICATION THEREOF
METHOD FOR TREATING GRAPHENE SHEETS FOR LARGE-SCALE TRANSFER USING FREE-FLOAT METHOD
ALTERATION OF GRAPHENE DEFECTS
SUPERLUBRICATING GRAPHENE AND GRAPHENE OXIDE FILMS
METHOD AND SYSTEM FOR GROWTH OF GRAPHENE NANOSTRIPES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of the structure of a composite heat dispatching plate of experimental samples 1 to 5, 7 to 9, 12 and embodiments 12 to 14 …
FIG. 2 is a schematic illustration of a testing device of the composite heat dispatching plate of experimental sample 1 to 5, 7 to 9, 12 and embodiments 12 to …
FIG. 3B is a X-ray Photoelectron spectroscopy (XPS) bond energy chart of the nitrogen- doped graphene according to the present invention; [0030]
FIG. 4 is a schematic illustration of the structure of a composite heat dispatching plates of experimental samples 6, 10 -11 and 13 of the present invention; …
FIG. 5 is a microscope image of a copper foil coated with graphene not being nitrogen doped of experimental sample 5 of the present invention; [0033]
FIG. 6 is a temperature distribution chart (thermograms) on the overall 15 observation on the composite heat dispatching plate coated with nitrogen-doped …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-2 Canceled
Canceled
A method of preparing nitrogen-doped graphene for a heat dispatching plate, comprising the steps of: mixing at least one solid-state precursor containing nitrogen with a solid-state graphene to directly form a powder mixture by using a solid phase mixing method; and sintering said powder mixture under a reducing atmosphere to obtain said nitrogen-doped graphene, wherein said solid-state precursor containing nitrogen is an organic solid-state nitrogen source, and said organic solid-state nitrogen source is selected from at least one of the following: C 6 H 5 COON H 4, HOC(CO 2 NH 4)(CH 2 CO 2 NH 4) 2, HCO 2 NH 4, C 11 H 7 N, C 10 H 6 (CN) 2 and C 12 H 7 N O 2. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said solid-state graphene is selected from at least one of monolayer graphene, multilayer graphene, reduced graphene oxide and graphene derivatives. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said nitrogen-doped graphene has bonding configurations of Pyridinic N(398.1-399.3 eV) and Graphitic N(401.1-402.7 eV). Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein a mass mixing ratio between said solid-state precursor containing nitrogen and said solid-state graphene is over 1. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein a mass mixing ratio between said solid-state graphene and said solid-state precursor containing nitrogen is between 1:1 and 1:30. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein a nitrogen content of said nitrogen-doped graphene is between 0.04 wt % and 5 wt %. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said powder mixture is sintered under a temperature between 300 ° C and 800 °C. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said powder mixture is sintered for 0.5 to 10 hours. Previously presented
A method of producing a composite heat dispatching plate, comprising the steps of: mixing a nitrogen-doped graphene with a polymer bonding agent to form a mixture slurry, wherein said nitrogen-doped graphene is prepared by using any of the methods of claims 3, 6 to 12, wherein said nitrogen-doped graphene content in said mixture slurry is between 50 wt % and 93 wt %; coating said mixture slurry onto at least one surface of a metal substrate to form a composite material; drying said composite material; and obtaining said composite heat dispatching plate with a coating of nitrogen- doped graphene. Previously presented
Canceled
The method of preparing nitrogen-doped graphene according to claim [[1]] 3, wherein said solid-state precursor containing nitrogen is a combination of an organic solid-state nitrogen source and an inorganic solid-state nitrogen source; said organic solid-state nitrogen source is selected from at least one of the following: C 6 H 12 N 4, C 6 H 5 COONH 4, (NH 4) 2 C O 3, HOC(CO 2 NH 4)(CH 2 CO 2 NH 4) 2, HC O 2 NH 4, C 11 H 7 N, C 3 H 3 N 6, C 1 oH 6 (CN) 2 and C 12 H 7 N O 2.; and said inorganic solid-state nitrogen source is selected from at least one of NH 4 NO 3 and other inorganic nitrate salts. Currently amended
Canceled
A method of preparing nitrogen-doped graphene for a heat dispatching plate, comprising: mixing at least one solid-state precursor containing nitrogen with a solid-state graphene to directly form a powder mixture; and sintering said powder mixture under a reducing atmosphere to obtain said nitrogen-doped graphene, wherein said solid-state precursor containing nitrogen is an organic solid-state nitrogen source, and said organic solid-state nitrogen source is selected from at least one of the following: C 6 H 5 C OONH 4, HOC(CO 2 NH 4)(CH 2 CO 2 NH 4) 2, HCO 2 NH 4, C 11 H 7 N, C 1 0 H 6 (CN) 2 and C 12 H 7 N O 2. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
composite heat dispatching plate
Materials described outside the worked examples.
nitrogen-doped graphene
ammonium benzoate
C₆H₅COONH₄
ammonium citrate tribasic
HOC(CO₂NH₄)(CH₂CO₂NH₄)2
ammonium formate
HCO₂NH₄
acridine
C₁₁H₇N
2,3-dicyanonaphtalene
C₁₀H₆(CN)2
acridone
C₁₂H₇NO₂
hexamethylenetetramine
C₆H₁₂N₄
ammonium carbonate
(NH₄)2CO₃
melamine
C₃H₃N₆
ammonium nitrate
NH₄NO₃
inorganic nitrate salts
monolayer graphene
multilayer graphene
reduced graphene oxide
graphene derivatives
polymer bonding agent
Carboxymethyl Cellulose
copper foil
conductive graphite
butadiene styrene rubber
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B is a X-ray Photoelectron spectroscopy (XPS) bond energy chart of the nitrogen- doped graphene according to the present invention; [0030]
FIG. 3B is a X-ray Photoelectron spectroscopy (XPS) bond energy chart of the nitrogen- doped graphene according to the present invention; [0030]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pyridinic N binding energy | — | nitrogen-doped graphene |
Graphitic N binding energy | — | nitrogen-doped graphene |
Temperature | 300–800 °C | — |
Duration | 0.5–10 hours | — |
— | 398.1–399.3 eV | — |
— | 401.1–402.7 eV | — |
— | 1–399.3 eV | — |
— | 1–402.7 eV | — |
Related documents with shared materials, methods, properties, or citations.
Method of Manufacturing Graphene Using Photoreduction
TITANIUM DIOXIDE / SULFONATED GRAPHENE OXIDE / AG NANOPARTICLE COMPOSITE MEMBRANE AND PREPARATION AND APPLICATION THEREOF
METHOD FOR TREATING GRAPHENE SHEETS FOR LARGE-SCALE TRANSFER USING FREE-FLOAT METHOD
ALTERATION OF GRAPHENE DEFECTS
SUPERLUBRICATING GRAPHENE AND GRAPHENE OXIDE FILMS
METHOD AND SYSTEM FOR GROWTH OF GRAPHENE NANOSTRIPES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of the structure of a composite heat dispatching plate of experimental samples 1 to 5, 7 to 9, 12 and embodiments 12 to 14 …
FIG. 2 is a schematic illustration of a testing device of the composite heat dispatching plate of experimental sample 1 to 5, 7 to 9, 12 and embodiments 12 to …
FIG. 3B is a X-ray Photoelectron spectroscopy (XPS) bond energy chart of the nitrogen- doped graphene according to the present invention; [0030]
FIG. 4 is a schematic illustration of the structure of a composite heat dispatching plates of experimental samples 6, 10 -11 and 13 of the present invention; …
FIG. 5 is a microscope image of a copper foil coated with graphene not being nitrogen doped of experimental sample 5 of the present invention; [0033]
FIG. 6 is a temperature distribution chart (thermograms) on the overall 15 observation on the composite heat dispatching plate coated with nitrogen-doped …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-2 Canceled
Canceled
A method of preparing nitrogen-doped graphene for a heat dispatching plate, comprising the steps of: mixing at least one solid-state precursor containing nitrogen with a solid-state graphene to directly form a powder mixture by using a solid phase mixing method; and sintering said powder mixture under a reducing atmosphere to obtain said nitrogen-doped graphene, wherein said solid-state precursor containing nitrogen is an organic solid-state nitrogen source, and said organic solid-state nitrogen source is selected from at least one of the following: C 6 H 5 COON H 4, HOC(CO 2 NH 4)(CH 2 CO 2 NH 4) 2, HCO 2 NH 4, C 11 H 7 N, C 10 H 6 (CN) 2 and C 12 H 7 N O 2. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said solid-state graphene is selected from at least one of monolayer graphene, multilayer graphene, reduced graphene oxide and graphene derivatives. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said nitrogen-doped graphene has bonding configurations of Pyridinic N(398.1-399.3 eV) and Graphitic N(401.1-402.7 eV). Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein a mass mixing ratio between said solid-state precursor containing nitrogen and said solid-state graphene is over 1. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein a mass mixing ratio between said solid-state graphene and said solid-state precursor containing nitrogen is between 1:1 and 1:30. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein a nitrogen content of said nitrogen-doped graphene is between 0.04 wt % and 5 wt %. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said powder mixture is sintered under a temperature between 300 ° C and 800 °C. Previously presented
The method of preparing nitrogen-doped graphene according to claim 3, wherein said powder mixture is sintered for 0.5 to 10 hours. Previously presented
A method of producing a composite heat dispatching plate, comprising the steps of: mixing a nitrogen-doped graphene with a polymer bonding agent to form a mixture slurry, wherein said nitrogen-doped graphene is prepared by using any of the methods of claims 3, 6 to 12, wherein said nitrogen-doped graphene content in said mixture slurry is between 50 wt % and 93 wt %; coating said mixture slurry onto at least one surface of a metal substrate to form a composite material; drying said composite material; and obtaining said composite heat dispatching plate with a coating of nitrogen- doped graphene. Previously presented
Canceled
The method of preparing nitrogen-doped graphene according to claim [[1]] 3, wherein said solid-state precursor containing nitrogen is a combination of an organic solid-state nitrogen source and an inorganic solid-state nitrogen source; said organic solid-state nitrogen source is selected from at least one of the following: C 6 H 12 N 4, C 6 H 5 COONH 4, (NH 4) 2 C O 3, HOC(CO 2 NH 4)(CH 2 CO 2 NH 4) 2, HC O 2 NH 4, C 11 H 7 N, C 3 H 3 N 6, C 1 oH 6 (CN) 2 and C 12 H 7 N O 2.; and said inorganic solid-state nitrogen source is selected from at least one of NH 4 NO 3 and other inorganic nitrate salts. Currently amended
Canceled
A method of preparing nitrogen-doped graphene for a heat dispatching plate, comprising: mixing at least one solid-state precursor containing nitrogen with a solid-state graphene to directly form a powder mixture; and sintering said powder mixture under a reducing atmosphere to obtain said nitrogen-doped graphene, wherein said solid-state precursor containing nitrogen is an organic solid-state nitrogen source, and said organic solid-state nitrogen source is selected from at least one of the following: C 6 H 5 C OONH 4, HOC(CO 2 NH 4)(CH 2 CO 2 NH 4) 2, HCO 2 NH 4, C 11 H 7 N, C 1 0 H 6 (CN) 2 and C 12 H 7 N O 2. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
composite heat dispatching plate
Materials described outside the worked examples.
nitrogen-doped graphene
ammonium benzoate
C₆H₅COONH₄
ammonium citrate tribasic
HOC(CO₂NH₄)(CH₂CO₂NH₄)2
ammonium formate
HCO₂NH₄
acridine
C₁₁H₇N
2,3-dicyanonaphtalene
C₁₀H₆(CN)2
acridone
C₁₂H₇NO₂
hexamethylenetetramine
C₆H₁₂N₄
ammonium carbonate
(NH₄)2CO₃
melamine
C₃H₃N₆
ammonium nitrate
NH₄NO₃
inorganic nitrate salts
monolayer graphene
multilayer graphene
reduced graphene oxide
graphene derivatives
polymer bonding agent
Carboxymethyl Cellulose
copper foil
conductive graphite
butadiene styrene rubber
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3B is a X-ray Photoelectron spectroscopy (XPS) bond energy chart of the nitrogen- doped graphene according to the present invention; [0030]
FIG. 3B is a X-ray Photoelectron spectroscopy (XPS) bond energy chart of the nitrogen- doped graphene according to the present invention; [0030]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pyridinic N binding energy | — | nitrogen-doped graphene |
Graphitic N binding energy | — | nitrogen-doped graphene |
Temperature | 300–800 °C | — |
Duration | 0.5–10 hours | — |
— | 398.1–399.3 eV | — |
— | 401.1–402.7 eV | — |
— | 1–399.3 eV | — |
— | 1–402.7 eV | — |
Related documents with shared materials, methods, properties, or citations.
Method of Manufacturing Graphene Using Photoreduction
TITANIUM DIOXIDE / SULFONATED GRAPHENE OXIDE / AG NANOPARTICLE COMPOSITE MEMBRANE AND PREPARATION AND APPLICATION THEREOF
METHOD FOR TREATING GRAPHENE SHEETS FOR LARGE-SCALE TRANSFER USING FREE-FLOAT METHOD
ALTERATION OF GRAPHENE DEFECTS
SUPERLUBRICATING GRAPHENE AND GRAPHENE OXIDE FILMS
METHOD AND SYSTEM FOR GROWTH OF GRAPHENE NANOSTRIPES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION