Patent
US 11,322,652METHODS FOR PRODUCING COMPOSITE GaN NANOCOLUMNS AND LIGHT EMITTING STRUCTURES MADE FROM THE METHODS
Anna Volkova, Vladimir Ivantsov, Alexander Syrkin, Benjamin A. Haskell et al.
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,322,652Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart presenting a method for producing composite a-plane GaN nanocolumns on c-plane sapphire substrate, according to one or more of the …
FIG. 2 is a perspective view of a structure sh ow ing the formation of a composite nan oco lumn 2 5 0 from three branches 240 that advance fro m the side walls …
FIG. 3 is a top-view SEM image of a composite a-plane GaN nanocolumn 310 of the invention grown by HVPE and composed of three 320, 330 and 340 adjacent a-plane …
FIG. 4 is a XRD p o le figure of the { 10 l 3 } GaN reflexes 4 1 0 gr own o n c-plane sapphire according to the invention, including composite GaN nanocolumns …
FIG. 5 is a SEM image of GaN composite nan oco lumns gr ow n according to the present method of the invention. The orientation of the nan oco lumns corresponds …
FIG. 6 is a cross-sectional SEM image of the GaN composite nanocolumns of the invention. The height of the nanocolumns depends inversely o n their diameter and …
FIG. 7 is a flowchart presenting a procedure for producing light emitting structures such as a light emitting diode structure or a laser diode structure using …
FIG. 8 is a schematic diagram of the composite nan oco lumn light emitting structure. 7682 P
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method for growing a composite nanocolumn comprising: forming a three-faceted tetrahedron-shaped pit below a surface of a sapphire substrate wherein each facet comprises an exposed surface of a respective r-plane of the sapphire substrate; initiating an a-plane GaN subnanocolumn nucleation on each facet; promoting a growth of an a-plane GaN sub-nanocolumn on each facet toward a center of the three-facet tetrahedron-shaped pit [[where]] whereby the a-plane GaN sub-nanocolumns coalesce to form [[a]] an a-plane composite nanocolumn.;. Currently amended
: The method according to claim 1, wherein the three-faceted tetrahedron-shaped pit is formed by wet chemical etching in a H 3 P O 4 based solution. Currently amended
: The method according to claim 1, wherein a size of the three- faceted tetrahedron-shaped pit in a lateral dimension is sub-micron. Currently amended
: The method according to claim 1, wherein a size of the three- faceted tetrahedron-shaped pit in a lateral dimension is in a range of 10 nanometers to 50 microns. Currently amended
: The method according to claim 1, further comprised of a plurality of three-faceted tetrahedron-shaped pits and wherein the three-faceted tetrahedron- shaped pits are fo rm ed using a mask on the surface of the sapphire substrate to create a two-dimensional lattice pattern of three-faceted tetrahedron-shaped pits on the surface of the sapphire substrate. Currently amended
: The method according to claim 1, wherein the a-plane composite nanocolumn comprises a Group I II -nitride semiconductor material. Currently amended
: The method according to claim 1, wherein the sapphire substrate is a c-plane sapphire substrate. Currently amended
: The method according to claim 1, wherein the sapphire substrate is a c-plane sapphire substrate and a facet of the faceted pyramidal pit is parallel to an r-plane of the c-plane sapphire substrate. Currently amended
: The method according to claim 1, wherein the pit is a three- faceted tetrahedron-shaped pit and the three-faceted tetrahedron-shaped pit is formed by etching the substrate in a gas mixture containing HCl. Currently amended
: The method according to claim 1 further comprising growing composite nanocolumn multilayer GaN and InGaN light emitting structures on the a- plane composite nanocolumn wherein the light emitting structures emit different wavelengths based on crystallographic facets on which they are grown on the a-plane composite nanocolumn. Currently amended
Canceled Canceled
: Canceled
Canceled
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and InGaN light emitting structure. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and InGaN light emitting structure on the top of the composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and InGaN light emitting structure on the sides of the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and AlGaN photodetector structure on the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and AlGaN photodetector structure on top of the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and AlGaN photodetector structure on sides of the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn field emission structure on the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a power device on the a-plane composite nanocolumn. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
a-plane composite GaN nanocolumn
composite nanocolumn multilayer GaN/InGaN light emitting structure
composite nanocolumn multilayer GaN/AlGaN photodetector structure
Materials described outside the worked examples.
a-plane GaN
GaN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a top-view SEM image of a composite a-plane GaN nanocolumn 310 of the invention grown by HVPE and composed of three 320, 330 and 340 adjacent a-plane …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–50000 nm | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,322,652Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart presenting a method for producing composite a-plane GaN nanocolumns on c-plane sapphire substrate, according to one or more of the …
FIG. 2 is a perspective view of a structure sh ow ing the formation of a composite nan oco lumn 2 5 0 from three branches 240 that advance fro m the side walls …
FIG. 3 is a top-view SEM image of a composite a-plane GaN nanocolumn 310 of the invention grown by HVPE and composed of three 320, 330 and 340 adjacent a-plane …
FIG. 4 is a XRD p o le figure of the { 10 l 3 } GaN reflexes 4 1 0 gr own o n c-plane sapphire according to the invention, including composite GaN nanocolumns …
FIG. 5 is a SEM image of GaN composite nan oco lumns gr ow n according to the present method of the invention. The orientation of the nan oco lumns corresponds …
FIG. 6 is a cross-sectional SEM image of the GaN composite nanocolumns of the invention. The height of the nanocolumns depends inversely o n their diameter and …
FIG. 7 is a flowchart presenting a procedure for producing light emitting structures such as a light emitting diode structure or a laser diode structure using …
FIG. 8 is a schematic diagram of the composite nan oco lumn light emitting structure. 7682 P
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method for growing a composite nanocolumn comprising: forming a three-faceted tetrahedron-shaped pit below a surface of a sapphire substrate wherein each facet comprises an exposed surface of a respective r-plane of the sapphire substrate; initiating an a-plane GaN subnanocolumn nucleation on each facet; promoting a growth of an a-plane GaN sub-nanocolumn on each facet toward a center of the three-facet tetrahedron-shaped pit [[where]] whereby the a-plane GaN sub-nanocolumns coalesce to form [[a]] an a-plane composite nanocolumn.;. Currently amended
: The method according to claim 1, wherein the three-faceted tetrahedron-shaped pit is formed by wet chemical etching in a H 3 P O 4 based solution. Currently amended
: The method according to claim 1, wherein a size of the three- faceted tetrahedron-shaped pit in a lateral dimension is sub-micron. Currently amended
: The method according to claim 1, wherein a size of the three- faceted tetrahedron-shaped pit in a lateral dimension is in a range of 10 nanometers to 50 microns. Currently amended
: The method according to claim 1, further comprised of a plurality of three-faceted tetrahedron-shaped pits and wherein the three-faceted tetrahedron- shaped pits are fo rm ed using a mask on the surface of the sapphire substrate to create a two-dimensional lattice pattern of three-faceted tetrahedron-shaped pits on the surface of the sapphire substrate. Currently amended
: The method according to claim 1, wherein the a-plane composite nanocolumn comprises a Group I II -nitride semiconductor material. Currently amended
: The method according to claim 1, wherein the sapphire substrate is a c-plane sapphire substrate. Currently amended
: The method according to claim 1, wherein the sapphire substrate is a c-plane sapphire substrate and a facet of the faceted pyramidal pit is parallel to an r-plane of the c-plane sapphire substrate. Currently amended
: The method according to claim 1, wherein the pit is a three- faceted tetrahedron-shaped pit and the three-faceted tetrahedron-shaped pit is formed by etching the substrate in a gas mixture containing HCl. Currently amended
: The method according to claim 1 further comprising growing composite nanocolumn multilayer GaN and InGaN light emitting structures on the a- plane composite nanocolumn wherein the light emitting structures emit different wavelengths based on crystallographic facets on which they are grown on the a-plane composite nanocolumn. Currently amended
Canceled Canceled
: Canceled
Canceled
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and InGaN light emitting structure. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and InGaN light emitting structure on the top of the composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and InGaN light emitting structure on the sides of the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and AlGaN photodetector structure on the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and AlGaN photodetector structure on top of the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and AlGaN photodetector structure on sides of the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn field emission structure on the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a power device on the a-plane composite nanocolumn. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
a-plane composite GaN nanocolumn
composite nanocolumn multilayer GaN/InGaN light emitting structure
composite nanocolumn multilayer GaN/AlGaN photodetector structure
Materials described outside the worked examples.
a-plane GaN
GaN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a top-view SEM image of a composite a-plane GaN nanocolumn 310 of the invention grown by HVPE and composed of three 320, 330 and 340 adjacent a-plane …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–50000 nm | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,322,652Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart presenting a method for producing composite a-plane GaN nanocolumns on c-plane sapphire substrate, according to one or more of the …
FIG. 2 is a perspective view of a structure sh ow ing the formation of a composite nan oco lumn 2 5 0 from three branches 240 that advance fro m the side walls …
FIG. 3 is a top-view SEM image of a composite a-plane GaN nanocolumn 310 of the invention grown by HVPE and composed of three 320, 330 and 340 adjacent a-plane …
FIG. 4 is a XRD p o le figure of the { 10 l 3 } GaN reflexes 4 1 0 gr own o n c-plane sapphire according to the invention, including composite GaN nanocolumns …
FIG. 5 is a SEM image of GaN composite nan oco lumns gr ow n according to the present method of the invention. The orientation of the nan oco lumns corresponds …
FIG. 6 is a cross-sectional SEM image of the GaN composite nanocolumns of the invention. The height of the nanocolumns depends inversely o n their diameter and …
FIG. 7 is a flowchart presenting a procedure for producing light emitting structures such as a light emitting diode structure or a laser diode structure using …
FIG. 8 is a schematic diagram of the composite nan oco lumn light emitting structure. 7682 P
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method for growing a composite nanocolumn comprising: forming a three-faceted tetrahedron-shaped pit below a surface of a sapphire substrate wherein each facet comprises an exposed surface of a respective r-plane of the sapphire substrate; initiating an a-plane GaN subnanocolumn nucleation on each facet; promoting a growth of an a-plane GaN sub-nanocolumn on each facet toward a center of the three-facet tetrahedron-shaped pit [[where]] whereby the a-plane GaN sub-nanocolumns coalesce to form [[a]] an a-plane composite nanocolumn.;. Currently amended
: The method according to claim 1, wherein the three-faceted tetrahedron-shaped pit is formed by wet chemical etching in a H 3 P O 4 based solution. Currently amended
: The method according to claim 1, wherein a size of the three- faceted tetrahedron-shaped pit in a lateral dimension is sub-micron. Currently amended
: The method according to claim 1, wherein a size of the three- faceted tetrahedron-shaped pit in a lateral dimension is in a range of 10 nanometers to 50 microns. Currently amended
: The method according to claim 1, further comprised of a plurality of three-faceted tetrahedron-shaped pits and wherein the three-faceted tetrahedron- shaped pits are fo rm ed using a mask on the surface of the sapphire substrate to create a two-dimensional lattice pattern of three-faceted tetrahedron-shaped pits on the surface of the sapphire substrate. Currently amended
: The method according to claim 1, wherein the a-plane composite nanocolumn comprises a Group I II -nitride semiconductor material. Currently amended
: The method according to claim 1, wherein the sapphire substrate is a c-plane sapphire substrate. Currently amended
: The method according to claim 1, wherein the sapphire substrate is a c-plane sapphire substrate and a facet of the faceted pyramidal pit is parallel to an r-plane of the c-plane sapphire substrate. Currently amended
: The method according to claim 1, wherein the pit is a three- faceted tetrahedron-shaped pit and the three-faceted tetrahedron-shaped pit is formed by etching the substrate in a gas mixture containing HCl. Currently amended
: The method according to claim 1 further comprising growing composite nanocolumn multilayer GaN and InGaN light emitting structures on the a- plane composite nanocolumn wherein the light emitting structures emit different wavelengths based on crystallographic facets on which they are grown on the a-plane composite nanocolumn. Currently amended
Canceled Canceled
: Canceled
Canceled
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and InGaN light emitting structure. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and InGaN light emitting structure on the top of the composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and InGaN light emitting structure on the sides of the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and AlGaN photodetector structure on the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and AlGaN photodetector structure on top of the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and AlGaN photodetector structure on sides of the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn field emission structure on the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a power device on the a-plane composite nanocolumn. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
a-plane composite GaN nanocolumn
composite nanocolumn multilayer GaN/InGaN light emitting structure
composite nanocolumn multilayer GaN/AlGaN photodetector structure
Materials described outside the worked examples.
a-plane GaN
GaN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a top-view SEM image of a composite a-plane GaN nanocolumn 310 of the invention grown by HVPE and composed of three 320, 330 and 340 adjacent a-plane …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–50000 nm | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,322,652Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart presenting a method for producing composite a-plane GaN nanocolumns on c-plane sapphire substrate, according to one or more of the …
FIG. 2 is a perspective view of a structure sh ow ing the formation of a composite nan oco lumn 2 5 0 from three branches 240 that advance fro m the side walls …
FIG. 3 is a top-view SEM image of a composite a-plane GaN nanocolumn 310 of the invention grown by HVPE and composed of three 320, 330 and 340 adjacent a-plane …
FIG. 4 is a XRD p o le figure of the { 10 l 3 } GaN reflexes 4 1 0 gr own o n c-plane sapphire according to the invention, including composite GaN nanocolumns …
FIG. 5 is a SEM image of GaN composite nan oco lumns gr ow n according to the present method of the invention. The orientation of the nan oco lumns corresponds …
FIG. 6 is a cross-sectional SEM image of the GaN composite nanocolumns of the invention. The height of the nanocolumns depends inversely o n their diameter and …
FIG. 7 is a flowchart presenting a procedure for producing light emitting structures such as a light emitting diode structure or a laser diode structure using …
FIG. 8 is a schematic diagram of the composite nan oco lumn light emitting structure. 7682 P
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method for growing a composite nanocolumn comprising: forming a three-faceted tetrahedron-shaped pit below a surface of a sapphire substrate wherein each facet comprises an exposed surface of a respective r-plane of the sapphire substrate; initiating an a-plane GaN subnanocolumn nucleation on each facet; promoting a growth of an a-plane GaN sub-nanocolumn on each facet toward a center of the three-facet tetrahedron-shaped pit [[where]] whereby the a-plane GaN sub-nanocolumns coalesce to form [[a]] an a-plane composite nanocolumn.;. Currently amended
: The method according to claim 1, wherein the three-faceted tetrahedron-shaped pit is formed by wet chemical etching in a H 3 P O 4 based solution. Currently amended
: The method according to claim 1, wherein a size of the three- faceted tetrahedron-shaped pit in a lateral dimension is sub-micron. Currently amended
: The method according to claim 1, wherein a size of the three- faceted tetrahedron-shaped pit in a lateral dimension is in a range of 10 nanometers to 50 microns. Currently amended
: The method according to claim 1, further comprised of a plurality of three-faceted tetrahedron-shaped pits and wherein the three-faceted tetrahedron- shaped pits are fo rm ed using a mask on the surface of the sapphire substrate to create a two-dimensional lattice pattern of three-faceted tetrahedron-shaped pits on the surface of the sapphire substrate. Currently amended
: The method according to claim 1, wherein the a-plane composite nanocolumn comprises a Group I II -nitride semiconductor material. Currently amended
: The method according to claim 1, wherein the sapphire substrate is a c-plane sapphire substrate. Currently amended
: The method according to claim 1, wherein the sapphire substrate is a c-plane sapphire substrate and a facet of the faceted pyramidal pit is parallel to an r-plane of the c-plane sapphire substrate. Currently amended
: The method according to claim 1, wherein the pit is a three- faceted tetrahedron-shaped pit and the three-faceted tetrahedron-shaped pit is formed by etching the substrate in a gas mixture containing HCl. Currently amended
: The method according to claim 1 further comprising growing composite nanocolumn multilayer GaN and InGaN light emitting structures on the a- plane composite nanocolumn wherein the light emitting structures emit different wavelengths based on crystallographic facets on which they are grown on the a-plane composite nanocolumn. Currently amended
Canceled Canceled
: Canceled
Canceled
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and InGaN light emitting structure. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and InGaN light emitting structure on the top of the composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and InGaN light emitting structure on the sides of the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and AlGaN photodetector structure on the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and AlGaN photodetector structure on top of the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn multilayer GaN and AlGaN photodetector structure on sides of the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a composite nanocolumn field emission structure on the a-plane composite nanocolumn. Currently amended
: The method according to claim [[16]] 1, wherein the method further comprises growing a power device on the a-plane composite nanocolumn. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
a-plane composite GaN nanocolumn
composite nanocolumn multilayer GaN/InGaN light emitting structure
composite nanocolumn multilayer GaN/AlGaN photodetector structure
Materials described outside the worked examples.
a-plane GaN
GaN
sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a top-view SEM image of a composite a-plane GaN nanocolumn 310 of the invention grown by HVPE and composed of three 320, 330 and 340 adjacent a-plane …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–50000 nm | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
composite nanocolumn field emission structure
power device on a-plane composite nanocolumn
H₃PO₄ based solution
H₃PO₄
Group III-nitride semiconductor
InGaN
AlGaN
FIG. 4 is a XRD p o le figure of the { 10 l 3 } GaN reflexes 4 1 0 gr own o n c-plane sapphire according to the invention, including composite GaN nanocolumns …
FIG. 5 is a SEM image of GaN composite nan oco lumns gr ow n according to the present method of the invention. The orientation of the nan oco lumns corresponds …
FIG. 6 is a cross-sectional SEM image of the GaN composite nanocolumns of the invention. The height of the nanocolumns depends inversely o n their diameter and …
| 300–400 °C |
| — |
composite nanocolumn field emission structure
power device on a-plane composite nanocolumn
H₃PO₄ based solution
H₃PO₄
Group III-nitride semiconductor
InGaN
AlGaN
FIG. 4 is a XRD p o le figure of the { 10 l 3 } GaN reflexes 4 1 0 gr own o n c-plane sapphire according to the invention, including composite GaN nanocolumns …
FIG. 5 is a SEM image of GaN composite nan oco lumns gr ow n according to the present method of the invention. The orientation of the nan oco lumns corresponds …
FIG. 6 is a cross-sectional SEM image of the GaN composite nanocolumns of the invention. The height of the nanocolumns depends inversely o n their diameter and …
| 300–400 °C |
| — |
composite nanocolumn field emission structure
power device on a-plane composite nanocolumn
H₃PO₄ based solution
H₃PO₄
Group III-nitride semiconductor
InGaN
AlGaN
FIG. 4 is a XRD p o le figure of the { 10 l 3 } GaN reflexes 4 1 0 gr own o n c-plane sapphire according to the invention, including composite GaN nanocolumns …
FIG. 5 is a SEM image of GaN composite nan oco lumns gr ow n according to the present method of the invention. The orientation of the nan oco lumns corresponds …
FIG. 6 is a cross-sectional SEM image of the GaN composite nanocolumns of the invention. The height of the nanocolumns depends inversely o n their diameter and …
| 300–400 °C |
| — |
composite nanocolumn field emission structure
power device on a-plane composite nanocolumn
H₃PO₄ based solution
H₃PO₄
Group III-nitride semiconductor
InGaN
AlGaN
FIG. 4 is a XRD p o le figure of the { 10 l 3 } GaN reflexes 4 1 0 gr own o n c-plane sapphire according to the invention, including composite GaN nanocolumns …
FIG. 5 is a SEM image of GaN composite nan oco lumns gr ow n according to the present method of the invention. The orientation of the nan oco lumns corresponds …
FIG. 6 is a cross-sectional SEM image of the GaN composite nanocolumns of the invention. The height of the nanocolumns depends inversely o n their diameter and …
| 300–400 °C |
| — |