: An emitter, comprising: a substrate; a layered half-cylinder associated with said substrate, said layered half-cylinder configured with a channel having a pre-determined channel length, wherein said substrate and layered half-cylinder are defined in a three-dimensional coordinate frame of reference def in ed by an x-axis, a y-axis, and a z-axis, wherein a central longitudinal axis of said layered half-cylinder is centered at an origin of said three- dimensional coordinate frame of reference; said layered half-cylinder, comprising comprises: a first insulator la y er bonded to said substrate: a conductor layer bonded to said substrate first insulator layer; a[[n]] second insulator layer bonded to said conductor layer; an arcuate-shaped graphene layer having first and second surfaces, said first surface bonded to said conductor second insulator layer along a pre-determined contact length; wherein said pre-determined channel length corre-sponding corresponds to a distance between diametrically-opposing sides of said first surface of said arcuate- shaped graphene layer as measured perpendicular to said central longitudinal axis.

: An emitter, comprising: a doped silicon substrate; a layered half-cylinder associated with said doped silicon substrate, said layered half cylinder configured with a channel having a pre-dete rm ined channel length, wherein said substrate and said layered half cylinder are defined in a three-dimensional coordinate frame of reference defined by an x-axis, a y-axis, and a z- axis, wherein a central longitudinal axis of said layered half-cylinder is centered at an origin of said th r ee-dimensional coordinate frame of reference; wherein said layered half-cylinder, comprising comprises: a reverse T-shaped deposited silicon layer bonded to said doped silicon substrate; a first and a second L-shaped insulator layers having a horizontal and a vertical portion, wherein each of said first and second L-shaped insulator layers are bonded to said reverse T-shaped deposited silicon layer, wherein said 6 App l. No. 14 170 2,099 NAVY CASE NO. 103234 Response to Office Action horizontal and said vertical portions of said first and said second L-shaped insulator layers ar e positioned in intimate adjacent contact with said reverse T- shaped deposited silicon layers; wherein said horizontal and said vertical portions of said first and said second L-shaped insulator layers are positioned outwardly away and diametrically- opposed from each other and separated by said reverse T-shaped deposited silicon layer; a first and a second L-shaped conductor layers having a horizontal and a vertical portion, wherein each of said first and second L-shaped conductor layers are bonded to said first and said second L-shaped insulator layers, respectively, wherein said horizontal and said vertical portions of said first and said second L- shaped conductor layers are positioned in intimate adjacent contact with said first and said second L-shaped insulator layers, respectively; wherein said horizontal and said vertical portions of said first and said second L-shaped conductor layers are positioned outwardly away and diametrically- opposed from each other; a first and a second L-shaped silicon layers having a horizontal and a vertical portion, wherein each of said first and second L-shaped silicon layers are bonded to said first and said second L-shaped conductor layers, respectively, wherein said horizontal and said vertical portions of said first and said second L-shap e d silicon layers are positioned in intimate adjacent contact with said first and said second L-shaped conductor layers, respectively; wherein said horizontal and said vertical portions of said first and said second 7 App l. No. 1 4/702,099 NAVY CASE NO. 103234 Response to Office Action L-shaped silicon layers are positioned outwardly away and diametrically-opposed from each other; a C-shaped graphene arch layer having first and second surfaces, said C- shaped graphene arch layer bonded to each of said vertical portions of each of said first and second L-shaped silicon layers, wherein said pr e- determined channel length corresponding corresponds to a distance between diametrically- opposing sides of said first surface of said C-shaped graphene arch layer as measured perpendicular to said central longitudinal axis.

: An emitter, comprising: a substrate; a layered half-cylinder associated with said substrate, said layered half-cylinder configured with a channel having a pre-determined channel length, wherein said substrate and layered half-cylinder are defined in a three-dimensional coordinate frame of reference def in ed by an x-axis, a y-axis, and a z-axis, wherein a central longitudinal axis of said layered half-cylinder is centered at an origin of said three- dimensional coordinate frame of reference; said layered half-cylinder, comprising comprises: a first insulator la y er bonded to said substrate: a conductor layer bonded to said substrate first insulator layer; a[[n]] second insulator layer bonded to said conductor layer; an arcuate-shaped graphene layer having first and second surfaces, said first surface bonded to said conductor second insulator layer along a pre-determined contact length; wherein said pre-determined channel length corre-sponding corresponds to a distance between diametrically-opposing sides of said first surface of said arcuate- shaped graphene layer as measured perpendicular to said central longitudinal axis.

: An emitter, comprising: a doped silicon substrate; a layered half-cylinder associated with said doped silicon substrate, said layered half cylinder configured with a channel having a pre-dete rm ined channel length, wherein said substrate and said layered half cylinder are defined in a three-dimensional coordinate frame of reference defined by an x-axis, a y-axis, and a z- axis, wherein a central longitudinal axis of said layered half-cylinder is centered at an origin of said th r ee-dimensional coordinate frame of reference; wherein said layered half-cylinder, comprising comprises: a reverse T-shaped deposited silicon layer bonded to said doped silicon substrate; a first and a second L-shaped insulator layers having a horizontal and a vertical portion, wherein each of said first and second L-shaped insulator layers are bonded to said reverse T-shaped deposited silicon layer, wherein said 6 App l. No. 14 170 2,099 NAVY CASE NO. 103234 Response to Office Action horizontal and said vertical portions of said first and said second L-shaped insulator layers ar e positioned in intimate adjacent contact with said reverse T- shaped deposited silicon layers; wherein said horizontal and said vertical portions of said first and said second L-shaped insulator layers are positioned outwardly away and diametrically- opposed from each other and separated by said reverse T-shaped deposited silicon layer; a first and a second L-shaped conductor layers having a horizontal and a vertical portion, wherein each of said first and second L-shaped conductor layers are bonded to said first and said second L-shaped insulator layers, respectively, wherein said horizontal and said vertical portions of said first and said second L- shaped conductor layers are positioned in intimate adjacent contact with said first and said second L-shaped insulator layers, respectively; wherein said horizontal and said vertical portions of said first and said second L-shaped conductor layers are positioned outwardly away and diametrically- opposed from each other; a first and a second L-shaped silicon layers having a horizontal and a vertical portion, wherein each of said first and second L-shaped silicon layers are bonded to said first and said second L-shaped conductor layers, respectively, wherein said horizontal and said vertical portions of said first and said second L-shap e d silicon layers are positioned in intimate adjacent contact with said first and said second L-shaped conductor layers, respectively; wherein said horizontal and said vertical portions of said first and said second 7 App l. No. 1 4/702,099 NAVY CASE NO. 103234 Response to Office Action L-shaped silicon layers are positioned outwardly away and diametrically-opposed from each other; a C-shaped graphene arch layer having first and second surfaces, said C- shaped graphene arch layer bonded to each of said vertical portions of each of said first and second L-shaped silicon layers, wherein said pr e- determined channel length corresponding corresponds to a distance between diametrically- opposing sides of said first surface of said C-shaped graphene arch layer as measured perpendicular to said central longitudinal axis.

: An emitter, comprising: a substrate; a layered half-cylinder associated with said substrate, said layered half-cylinder configured with a channel having a pre-determined channel length, wherein said substrate and layered half-cylinder are defined in a three-dimensional coordinate frame of reference def in ed by an x-axis, a y-axis, and a z-axis, wherein a central longitudinal axis of said layered half-cylinder is centered at an origin of said three- dimensional coordinate frame of reference; said layered half-cylinder, comprising comprises: a first insulator la y er bonded to said substrate: a conductor layer bonded to said substrate first insulator layer; a[[n]] second insulator layer bonded to said conductor layer; an arcuate-shaped graphene layer having first and second surfaces, said first surface bonded to said conductor second insulator layer along a pre-determined contact length; wherein said pre-determined channel length corre-sponding corresponds to a distance between diametrically-opposing sides of said first surface of said arcuate- shaped graphene layer as measured perpendicular to said central longitudinal axis.

: An emitter, comprising: a doped silicon substrate; a layered half-cylinder associated with said doped silicon substrate, said layered half cylinder configured with a channel having a pre-dete rm ined channel length, wherein said substrate and said layered half cylinder are defined in a three-dimensional coordinate frame of reference defined by an x-axis, a y-axis, and a z- axis, wherein a central longitudinal axis of said layered half-cylinder is centered at an origin of said th r ee-dimensional coordinate frame of reference; wherein said layered half-cylinder, comprising comprises: a reverse T-shaped deposited silicon layer bonded to said doped silicon substrate; a first and a second L-shaped insulator layers having a horizontal and a vertical portion, wherein each of said first and second L-shaped insulator layers are bonded to said reverse T-shaped deposited silicon layer, wherein said 6 App l. No. 14 170 2,099 NAVY CASE NO. 103234 Response to Office Action horizontal and said vertical portions of said first and said second L-shaped insulator layers ar e positioned in intimate adjacent contact with said reverse T- shaped deposited silicon layers; wherein said horizontal and said vertical portions of said first and said second L-shaped insulator layers are positioned outwardly away and diametrically- opposed from each other and separated by said reverse T-shaped deposited silicon layer; a first and a second L-shaped conductor layers having a horizontal and a vertical portion, wherein each of said first and second L-shaped conductor layers are bonded to said first and said second L-shaped insulator layers, respectively, wherein said horizontal and said vertical portions of said first and said second L- shaped conductor layers are positioned in intimate adjacent contact with said first and said second L-shaped insulator layers, respectively; wherein said horizontal and said vertical portions of said first and said second L-shaped conductor layers are positioned outwardly away and diametrically- opposed from each other; a first and a second L-shaped silicon layers having a horizontal and a vertical portion, wherein each of said first and second L-shaped silicon layers are bonded to said first and said second L-shaped conductor layers, respectively, wherein said horizontal and said vertical portions of said first and said second L-shap e d silicon layers are positioned in intimate adjacent contact with said first and said second L-shaped conductor layers, respectively; wherein said horizontal and said vertical portions of said first and said second 7 App l. No. 1 4/702,099 NAVY CASE NO. 103234 Response to Office Action L-shaped silicon layers are positioned outwardly away and diametrically-opposed from each other; a C-shaped graphene arch layer having first and second surfaces, said C- shaped graphene arch layer bonded to each of said vertical portions of each of said first and second L-shaped silicon layers, wherein said pr e- determined channel length corresponding corresponds to a distance between diametrically- opposing sides of said first surface of said C-shaped graphene arch layer as measured perpendicular to said central longitudinal axis.

: An emitter, comprising: a substrate; a layered half-cylinder associated with said substrate, said layered half-cylinder configured with a channel having a pre-determined channel length, wherein said substrate and layered half-cylinder are defined in a three-dimensional coordinate frame of reference def in ed by an x-axis, a y-axis, and a z-axis, wherein a central longitudinal axis of said layered half-cylinder is centered at an origin of said three- dimensional coordinate frame of reference; said layered half-cylinder, comprising comprises: a first insulator la y er bonded to said substrate: a conductor layer bonded to said substrate first insulator layer; a[[n]] second insulator layer bonded to said conductor layer; an arcuate-shaped graphene layer having first and second surfaces, said first surface bonded to said conductor second insulator layer along a pre-determined contact length; wherein said pre-determined channel length corre-sponding corresponds to a distance between diametrically-opposing sides of said first surface of said arcuate- shaped graphene layer as measured perpendicular to said central longitudinal axis.

: An emitter, comprising: a doped silicon substrate; a layered half-cylinder associated with said doped silicon substrate, said layered half cylinder configured with a channel having a pre-dete rm ined channel length, wherein said substrate and said layered half cylinder are defined in a three-dimensional coordinate frame of reference defined by an x-axis, a y-axis, and a z- axis, wherein a central longitudinal axis of said layered half-cylinder is centered at an origin of said th r ee-dimensional coordinate frame of reference; wherein said layered half-cylinder, comprising comprises: a reverse T-shaped deposited silicon layer bonded to said doped silicon substrate; a first and a second L-shaped insulator layers having a horizontal and a vertical portion, wherein each of said first and second L-shaped insulator layers are bonded to said reverse T-shaped deposited silicon layer, wherein said 6 App l. No. 14 170 2,099 NAVY CASE NO. 103234 Response to Office Action horizontal and said vertical portions of said first and said second L-shaped insulator layers ar e positioned in intimate adjacent contact with said reverse T- shaped deposited silicon layers; wherein said horizontal and said vertical portions of said first and said second L-shaped insulator layers are positioned outwardly away and diametrically- opposed from each other and separated by said reverse T-shaped deposited silicon layer; a first and a second L-shaped conductor layers having a horizontal and a vertical portion, wherein each of said first and second L-shaped conductor layers are bonded to said first and said second L-shaped insulator layers, respectively, wherein said horizontal and said vertical portions of said first and said second L- shaped conductor layers are positioned in intimate adjacent contact with said first and said second L-shaped insulator layers, respectively; wherein said horizontal and said vertical portions of said first and said second L-shaped conductor layers are positioned outwardly away and diametrically- opposed from each other; a first and a second L-shaped silicon layers having a horizontal and a vertical portion, wherein each of said first and second L-shaped silicon layers are bonded to said first and said second L-shaped conductor layers, respectively, wherein said horizontal and said vertical portions of said first and said second L-shap e d silicon layers are positioned in intimate adjacent contact with said first and said second L-shaped conductor layers, respectively; wherein said horizontal and said vertical portions of said first and said second 7 App l. No. 1 4/702,099 NAVY CASE NO. 103234 Response to Office Action L-shaped silicon layers are positioned outwardly away and diametrically-opposed from each other; a C-shaped graphene arch layer having first and second surfaces, said C- shaped graphene arch layer bonded to each of said vertical portions of each of said first and second L-shaped silicon layers, wherein said pr e- determined channel length corresponding corresponds to a distance between diametrically- opposing sides of said first surface of said C-shaped graphene arch layer as measured perpendicular to said central longitudinal axis.