Patent
US 9,341,656NANOSENSORS INCLUDING GRAPHENE AND METHODS OF MANUFACTURING THE SAME
Tae-han JEON
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,341,656Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a plan view illustrating a nanosensor according to an embodiment of the present disclosure; [0010]
FIGS. 2A and 2B are, respectively, a plan view and a cross-sectional view illustrating a nanosensor according to another embodiment of the present disclosure; …
FIGS. 3A and 3B are, respectively, a plan view and a cross-sectional view illustrating a nanosensor according to another embodiment of the present disclosure; …
FIGS. 4 and 5 are cross-sectional views illustrating nanosensors according to other embodiments of the present disclosure; [0014]
FIG. 5, a marker (only a ninth marker 562 is shown and a tenth marker 564 is not shown) may be formed on a portion of the second insulating layer 140 where the …
FIGS. 6A through 6F are cross-sectional views for explaining a method of manufacturing the nanosensor including graphene of
FIGS. 7A and 7B are, respectively, a plan view and a cross-sectional view illustrating a nanosensor having a gap, according to an embodiment of the present …
FIGS. 8A through 11 are plan views illustrating nanosensors each having a gap, according to other embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanosensor comprising: a first insulating layer having a first pore formed therein; a graphene layer disposed on the first insulating layer and having a second pore or a gap formed therein adjacent to the first pore; and a marker element, including a marker material disposed on a portion of the first insulating layer where the graphene layer is not formed and wherein the marker element is spaced apart from the graphene layer.
The nanosensor of claim 1, wherein a size of the first pore is equal to or greater than a size of the second pore or a size of the gap.
The nanosensor of claim 1, wherein the second pore or the gap partially overlaps the first pore.
The nanosensor of claim 1, wherein the marker element comprises a first marker and a second marker spaced apart from each other with the graphene layer located therebetween.
The nanosensor of claim 1, wherein the marker element is formed of material includes a metal material, an insulating material, or a polymer.
The nanosensor of claim 1, further comprising a first electrode pad and a second electrode pad that are disposed on opposite sides of the graphene layer and spaced apart from each other.
canceled
canceled
A method of manufacturing a nanosensor, the method comprising: sequentially forming a first insulating layer, a graphene layer, and a metal layer on a substrate; patterning the graphene layer and the metal layer; forming a marker element on the first insulating layer or on the graphene layer; forming a second insulating layer on the first insulating layer to cover the patterned graphene layer and metal layer and the marker element; and forming a gap or a pore in the graphene layer. withdrawn
The method of claim 18, wherein the forming of the gap or the pore comprises forming the gap or the pore using a transmission electron microscope (TEM) or a focused ion beam (FIB) tool. withdrawn
The method of claim 18, wherein the marker element comprises a first marker and a second marker spaced apart from each other with the gap or the pore therebetween. withdrawn
The method of claim 18, wherein the forming of the marker element comprises forming the marker element using FIB or electron beam lithography. withdrawn
A method of forming a marker on an apparatus including a graphene layer, the method comprising: forming an element of the apparatus; forming a graphene layer on a first portion of the element; forming a marker element on a second portion of the element or the graphene layer; and forming one or more other elements of the apparatus. Page 5 of 8 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanosensor
Materials described outside the worked examples.
graphene
first insulating layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 nm | — |
Thickness | 1–100 nm |
Patent
Atlas literature
Patent
US 9,341,656Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a plan view illustrating a nanosensor according to an embodiment of the present disclosure; [0010]
FIGS. 2A and 2B are, respectively, a plan view and a cross-sectional view illustrating a nanosensor according to another embodiment of the present disclosure; …
FIGS. 3A and 3B are, respectively, a plan view and a cross-sectional view illustrating a nanosensor according to another embodiment of the present disclosure; …
FIGS. 4 and 5 are cross-sectional views illustrating nanosensors according to other embodiments of the present disclosure; [0014]
FIG. 5, a marker (only a ninth marker 562 is shown and a tenth marker 564 is not shown) may be formed on a portion of the second insulating layer 140 where the …
FIGS. 6A through 6F are cross-sectional views for explaining a method of manufacturing the nanosensor including graphene of
FIGS. 7A and 7B are, respectively, a plan view and a cross-sectional view illustrating a nanosensor having a gap, according to an embodiment of the present …
FIGS. 8A through 11 are plan views illustrating nanosensors each having a gap, according to other embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanosensor comprising: a first insulating layer having a first pore formed therein; a graphene layer disposed on the first insulating layer and having a second pore or a gap formed therein adjacent to the first pore; and a marker element, including a marker material disposed on a portion of the first insulating layer where the graphene layer is not formed and wherein the marker element is spaced apart from the graphene layer.
The nanosensor of claim 1, wherein a size of the first pore is equal to or greater than a size of the second pore or a size of the gap.
The nanosensor of claim 1, wherein the second pore or the gap partially overlaps the first pore.
The nanosensor of claim 1, wherein the marker element comprises a first marker and a second marker spaced apart from each other with the graphene layer located therebetween.
The nanosensor of claim 1, wherein the marker element is formed of material includes a metal material, an insulating material, or a polymer.
The nanosensor of claim 1, further comprising a first electrode pad and a second electrode pad that are disposed on opposite sides of the graphene layer and spaced apart from each other.
canceled
canceled
A method of manufacturing a nanosensor, the method comprising: sequentially forming a first insulating layer, a graphene layer, and a metal layer on a substrate; patterning the graphene layer and the metal layer; forming a marker element on the first insulating layer or on the graphene layer; forming a second insulating layer on the first insulating layer to cover the patterned graphene layer and metal layer and the marker element; and forming a gap or a pore in the graphene layer. withdrawn
The method of claim 18, wherein the forming of the gap or the pore comprises forming the gap or the pore using a transmission electron microscope (TEM) or a focused ion beam (FIB) tool. withdrawn
The method of claim 18, wherein the marker element comprises a first marker and a second marker spaced apart from each other with the gap or the pore therebetween. withdrawn
The method of claim 18, wherein the forming of the marker element comprises forming the marker element using FIB or electron beam lithography. withdrawn
A method of forming a marker on an apparatus including a graphene layer, the method comprising: forming an element of the apparatus; forming a graphene layer on a first portion of the element; forming a marker element on a second portion of the element or the graphene layer; and forming one or more other elements of the apparatus. Page 5 of 8 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanosensor
Materials described outside the worked examples.
graphene
first insulating layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 nm | — |
Thickness | 1–100 nm |
Patent
Atlas literature
Patent
US 9,341,656Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a plan view illustrating a nanosensor according to an embodiment of the present disclosure; [0010]
FIGS. 2A and 2B are, respectively, a plan view and a cross-sectional view illustrating a nanosensor according to another embodiment of the present disclosure; …
FIGS. 3A and 3B are, respectively, a plan view and a cross-sectional view illustrating a nanosensor according to another embodiment of the present disclosure; …
FIGS. 4 and 5 are cross-sectional views illustrating nanosensors according to other embodiments of the present disclosure; [0014]
FIG. 5, a marker (only a ninth marker 562 is shown and a tenth marker 564 is not shown) may be formed on a portion of the second insulating layer 140 where the …
FIGS. 6A through 6F are cross-sectional views for explaining a method of manufacturing the nanosensor including graphene of
FIGS. 7A and 7B are, respectively, a plan view and a cross-sectional view illustrating a nanosensor having a gap, according to an embodiment of the present …
FIGS. 8A through 11 are plan views illustrating nanosensors each having a gap, according to other embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanosensor comprising: a first insulating layer having a first pore formed therein; a graphene layer disposed on the first insulating layer and having a second pore or a gap formed therein adjacent to the first pore; and a marker element, including a marker material disposed on a portion of the first insulating layer where the graphene layer is not formed and wherein the marker element is spaced apart from the graphene layer.
The nanosensor of claim 1, wherein a size of the first pore is equal to or greater than a size of the second pore or a size of the gap.
The nanosensor of claim 1, wherein the second pore or the gap partially overlaps the first pore.
The nanosensor of claim 1, wherein the marker element comprises a first marker and a second marker spaced apart from each other with the graphene layer located therebetween.
The nanosensor of claim 1, wherein the marker element is formed of material includes a metal material, an insulating material, or a polymer.
The nanosensor of claim 1, further comprising a first electrode pad and a second electrode pad that are disposed on opposite sides of the graphene layer and spaced apart from each other.
canceled
canceled
A method of manufacturing a nanosensor, the method comprising: sequentially forming a first insulating layer, a graphene layer, and a metal layer on a substrate; patterning the graphene layer and the metal layer; forming a marker element on the first insulating layer or on the graphene layer; forming a second insulating layer on the first insulating layer to cover the patterned graphene layer and metal layer and the marker element; and forming a gap or a pore in the graphene layer. withdrawn
The method of claim 18, wherein the forming of the gap or the pore comprises forming the gap or the pore using a transmission electron microscope (TEM) or a focused ion beam (FIB) tool. withdrawn
The method of claim 18, wherein the marker element comprises a first marker and a second marker spaced apart from each other with the gap or the pore therebetween. withdrawn
The method of claim 18, wherein the forming of the marker element comprises forming the marker element using FIB or electron beam lithography. withdrawn
A method of forming a marker on an apparatus including a graphene layer, the method comprising: forming an element of the apparatus; forming a graphene layer on a first portion of the element; forming a marker element on a second portion of the element or the graphene layer; and forming one or more other elements of the apparatus. Page 5 of 8 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanosensor
Materials described outside the worked examples.
graphene
first insulating layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 nm | — |
Thickness | 1–100 nm |
Patent
Atlas literature
Patent
US 9,341,656Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a plan view illustrating a nanosensor according to an embodiment of the present disclosure; [0010]
FIGS. 2A and 2B are, respectively, a plan view and a cross-sectional view illustrating a nanosensor according to another embodiment of the present disclosure; …
FIGS. 3A and 3B are, respectively, a plan view and a cross-sectional view illustrating a nanosensor according to another embodiment of the present disclosure; …
FIGS. 4 and 5 are cross-sectional views illustrating nanosensors according to other embodiments of the present disclosure; [0014]
FIG. 5, a marker (only a ninth marker 562 is shown and a tenth marker 564 is not shown) may be formed on a portion of the second insulating layer 140 where the …
FIGS. 6A through 6F are cross-sectional views for explaining a method of manufacturing the nanosensor including graphene of
FIGS. 7A and 7B are, respectively, a plan view and a cross-sectional view illustrating a nanosensor having a gap, according to an embodiment of the present …
FIGS. 8A through 11 are plan views illustrating nanosensors each having a gap, according to other embodiments of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanosensor comprising: a first insulating layer having a first pore formed therein; a graphene layer disposed on the first insulating layer and having a second pore or a gap formed therein adjacent to the first pore; and a marker element, including a marker material disposed on a portion of the first insulating layer where the graphene layer is not formed and wherein the marker element is spaced apart from the graphene layer.
The nanosensor of claim 1, wherein a size of the first pore is equal to or greater than a size of the second pore or a size of the gap.
The nanosensor of claim 1, wherein the second pore or the gap partially overlaps the first pore.
The nanosensor of claim 1, wherein the marker element comprises a first marker and a second marker spaced apart from each other with the graphene layer located therebetween.
The nanosensor of claim 1, wherein the marker element is formed of material includes a metal material, an insulating material, or a polymer.
The nanosensor of claim 1, further comprising a first electrode pad and a second electrode pad that are disposed on opposite sides of the graphene layer and spaced apart from each other.
canceled
canceled
A method of manufacturing a nanosensor, the method comprising: sequentially forming a first insulating layer, a graphene layer, and a metal layer on a substrate; patterning the graphene layer and the metal layer; forming a marker element on the first insulating layer or on the graphene layer; forming a second insulating layer on the first insulating layer to cover the patterned graphene layer and metal layer and the marker element; and forming a gap or a pore in the graphene layer. withdrawn
The method of claim 18, wherein the forming of the gap or the pore comprises forming the gap or the pore using a transmission electron microscope (TEM) or a focused ion beam (FIB) tool. withdrawn
The method of claim 18, wherein the marker element comprises a first marker and a second marker spaced apart from each other with the gap or the pore therebetween. withdrawn
The method of claim 18, wherein the forming of the marker element comprises forming the marker element using FIB or electron beam lithography. withdrawn
A method of forming a marker on an apparatus including a graphene layer, the method comprising: forming an element of the apparatus; forming a graphene layer on a first portion of the element; forming a marker element on a second portion of the element or the graphene layer; and forming one or more other elements of the apparatus. Page 5 of 8 withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanosensor
Materials described outside the worked examples.
graphene
first insulating layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 nm | — |
Thickness | 1–100 nm |
marker material (metal, insulating material, or polymer)
silicon nitride
SiN
| — |
Thickness | 1–5 nm | — |
Thickness | 1–10 nm | — |
Thickness | 5–10 nm | — |
Thickness | 1–25 nm | — |
Thickness | 10–500 nm | — |
Thickness | 50–500 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.34 nm | — |
marker material (metal, insulating material, or polymer)
silicon nitride
SiN
| — |
Thickness | 1–5 nm | — |
Thickness | 1–10 nm | — |
Thickness | 5–10 nm | — |
Thickness | 1–25 nm | — |
Thickness | 10–500 nm | — |
Thickness | 50–500 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.34 nm | — |
marker material (metal, insulating material, or polymer)
silicon nitride
SiN
| — |
Thickness | 1–5 nm | — |
Thickness | 1–10 nm | — |
Thickness | 5–10 nm | — |
Thickness | 1–25 nm | — |
Thickness | 10–500 nm | — |
Thickness | 50–500 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.34 nm | — |
marker material (metal, insulating material, or polymer)
silicon nitride
SiN
| — |
Thickness | 1–5 nm | — |
Thickness | 1–10 nm | — |
Thickness | 5–10 nm | — |
Thickness | 1–25 nm | — |
Thickness | 10–500 nm | — |
Thickness | 50–500 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 0.34 nm | — |